US20240049492A1

US20240049492A1 - Organic electroluminescent device

Info

Publication number: US20240049492A1
Application number: US18/026,331
Authority: US
Inventors: Hamed SHARIFIDEHSARI; Georgios LIAPTSIS; Henning MARCINIAK; Daniel Alfredo DE SA PEREIRA; Kody KLIMES; Harald Flügge
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2020-09-18
Filing date: 2021-09-17
Publication date: 2024-02-08
Also published as: JP7512522B2; EP4214776A1; KR20230070208A; US20230345750A1; CN116261921A; EP4214777A1; US20230329024A1; EP4214770A1; CN116368956A; KR20230077725A; CN116326240A; JP2023542916A; KR20230077727A; US20230380199A1; CN116235645A; EP4214768A1; CN116235648A; US20230329023A1; WO2022058510A1; EP4214769A1

Abstract

The present invention relates to organic electroluminescent devices including one or more light-emitting layers B, each of which is composed of one or more sublayers including as a whole one or more excitation energy transfer components EET-1, one or more excitation energy transfer components EET-2, one or more small full width at half maximum (FWHM) emitters SB emitting light with an FWHM of less than or equal to 0.25 eV. Furthermore, the present invention relates to a method for generating light by means of an organic electroluminescent device according to the present invention.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a U.S. National Phase Patent Application of International Patent Application Number PCT/EP2021/075648, filed on Sep. 17, 2021, which claims priority to European Patent Application Number 20197076.1, filed on Sep. 18, 2020, European Patent Application Number 20197075.3, filed on Sep. 18, 2020, European Patent Application Number 20197074.6, filed on Sep. 18, 2020, European Patent Application Number 20197073.8, filed on Sep. 18, 2020, European Patent Application Number 20197072.0, filed on Sep. 18, 2020, European Patent Application Number 20197071.2, filed on Sep. 18, 2020, European Patent Application Number 20197589.3, filed on Sep. 22, 2020, European Patent Application Number 20197588.5, filed on Sep. 22, 2020, European Patent Application Number 20217041.1, filed on Dec. 23, 2020, European Patent Application Number 21170783.1, filed on Apr. 27, 2021, European Patent Application Number 21170775.7, filed on Apr. 27, 2021, European Patent Application Number 21170776.5, filed on Apr. 27, 2021, European Patent Application Number 21170779.9, filed on Apr. 27, 2021, European Patent Application Number 21184616.7, filed on Jul. 8, 2021, European Patent Application Number 21184619.1, filed on Jul. 8, 2021, European Patent Application Number 21185402.1, filed on Jul. 13, 2021, and European Patent Application Number 21186615.7, filed on Jul. 20, 2021, the entire content of each of which is incorporated herein by reference.
The present invention relates to organic electroluminescent devices including one or more light-emitting layers B, each of which is composed of one or more sublayers, wherein the one or more sublayers of each light-emitting layer B as a whole include one or more excitation energy transfer components EET-1, one or more excitation energy transfer components EET-2, one or more small full width at half maximum (FWHM) emitters S^Bemitting light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV, and optionally one or more host materials H^B. Furthermore, the present invention relates to a method for generating light by means of an organic electroluminescent device according to the present invention.

DESCRIPTION

Organic electroluminescent devices containing one or more light-emitting layers based on organics such as, e.g., organic light-emitting diodes (OLEDs), light-emitting electrochemical cells (LECs) and light-emitting transistors gain increasing importance. In particular, OLEDs are promising devices for electronic products such as e.g., screens, displays and illumination devices. In contrast to most electroluminescent devices essentially based on inorganics, organic electroluminescent devices based on organics are often rather flexible and producible in particularly thin layers. The OLED-based screens and displays already available today bear either good efficiencies and long lifetimes or good color purity and long lifetimes, but do not combine all three properties, i.e., good efficiency, long lifetime, and good color purity.
The color purity or color point of an OLED is typically provided by CIEx and CIEy coordinates, whereas the color gamut for the next display generation is provided by so-called BT-2020 and DCPI3 values. Generally, in order to achieve these color coordinates, top emitting devices are needed to adjust the color coordinate by changing the cavity. In order to achieve high efficiency in top emitting devices while targeting these color gamut, a narrow emission spectrum in bottom emitting devices is needed.
State-of-the-art phosphorescence emitters exhibit a rather broad emission, which is reflected by a broad emission of phosphorescence-based OLEDs (PHOLEDs) with a full-width-half-maximum (FWHM) of the emission spectrum, which is typically larger than 0.25 eV. The broad emission spectrum of PHOLEDs in bottom devices, leads to high losses in out-coupling efficiency for top emitting device structure while targeting BT-2020 and DCPI3 color gamut.
Additionally, phosphorescence materials are typically based on transition metals, e.g., iridium, which are quite expensive materials within the OLED stack due to their typically low abundance. Thus, transition metal based materials have the most potential for cost reduction of OLEDs. Lowering of the content of transition metals within the OLED stack thus is a key performance indicator for pricing of OLED applications.
Recently, some fluorescence or thermally-activated-delayed-fluorescence (TADF) emitters have been developed that display a rather narrow emission spectrum, which exhibits an FWHM of the emission spectrum, which is typically smaller than or equal to 0.25 eV, and therefore more suitable to achieve BT-2020 and DCPI3 color gamut. However, such fluorescence and TADF emitters typically suffer from low efficiency due to decreasing efficiencies at higher luminance (i.e., the roll-off behaviour of an OLED) as well as low lifetimes due to for example the exciton-polaron annihilation or exciton-exciton annihilation.
These disadvantages may be overcome to some extend by applying so-called hyper approaches. The latter rely on the use of an energy pump which transfers energy to a fluorescent emitter preferably displaying a narrow emission spectrum as stated above. The energy pump may for example be a TADF material displaying reversed-intersystem crossing (RISC) or a transition metal complex displaying efficient intersystem crossing (ISC). However, these approaches still do not provide organic electroluminescent devices combining all of the aforementioned desirable features, namely: good efficiency, long lifetime, and good color purity.
A central element of an organic electroluminescent device for generating light typically is the at least one light-emitting layer placed between an anode and a cathode. When a voltage (and electrical current) is applied to an organic electroluminescent device, holes and electrons are injected from an anode and a cathode, respectively. Typically, a hole transport layer is located between a light-emitting layer and an anode, and an electron transport layer is typically located between a light-emitting layer and a cathode. The different layers are sequentially disposed. Excitons of high energy are then generated by recombination of the holes and the electrons in a light-emitting layer. The decay of such excited states (e.g., singlet states such as S1 and/or triplet states such as T1 to the ground state (S0) desirably leads to the emission of light.
Surprisingly, it has been found that an organic electroluminescent device's light-emitting layer consisting of one or more (sub)layer(s) and as a whole including one or more excitation energy transfer components EET-1, one or more excitation energy transfer components EET-2, one or more small full width at half maximum (FWHM) emitters S^Bemitting light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV, and optionally one or more host materials H^Bprovides an organic electroluminescent device having a long lifetime, a high quantum yield and exhibiting narrow emission, ideally suitable to achieve the BT-2020 and DCPI3 color gamut.
Herein, EET-1 and/or EET-2 may transfer excitation energy to one or more small full width at half maximum (FWHM) emitters S^Bwhich emit light.
The present invention relates to an organic electroluminescent device including one or more light-emitting layers B, each being composed of one or more sublayers, wherein the one or more sublayers are adjacent to each other and as a whole include:

- (i) one or more excitation energy transfer components EET-1, each having a highest occupied molecular orbital HOMO(EET-1) with an energy E^HOMO(EET-1) and a lowest unoccupied molecular orbital LUMO(EET-1) with an energy E^LUMO(EET-1); and
- (ii) one or more excitation energy transfer components EET-2, each having a highest occupied molecular orbital HOMO(EET-2) with an energy E^HOMO(EET-2) and a lowest unoccupied molecular orbital LUMO(EET-2) with an energy E^LUMO(EET-2); and
- (iii) one or more small full width at half maximum (FWHM) emitters S^B, each having a highest occupied molecular orbital HOMO(S^B) with an energy E^HOMO(S^B) and a lowest unoccupied molecular orbital LUMO(S^B) with an energy E^LUMO(S^B), wherein each S^Bemits light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV; and optionally
- (iv) one or more host materials H^B, each having a highest occupied molecular orbital HOMO(H^B) with an energy E^HOMO(H^B) and a lowest unoccupied molecular orbital LUMO(H^B) with an energy E^LUMO(H^B)
- wherein EET-1 and EET-2 are not structurally identical (in other words: they do not have identical chemical structures),
- wherein the one or more sublayers which are located at the outer surface of each light-emitting layer B contain at least one material selected from the group consisting of EET-1, EET-2, and small FWHM emitter S^B, and
- wherein the relations expressed by the following Formulas (1) to (6), as far as the respective components are included in the same light-emitting layer B, apply:

E ^LUMO(EET-1)<E ^LUMO(H ^B) (1)
E ^LUMO(EET-1)<E ^LUMO(EET-2) (2)
E ^LUMO(EET-1)<E ^LUMO(S ^B) (3)
E ^HOMO(EET-2)≥E ^HOMO(H ^B) (4)
E ^HOMO(EET-2)≥E ^HOMO(EET-1) (5)
E ^HOMO(EET-2)≥E ^HOMO(S ^B) (6).
In other words, the relations expressed by the following Formulas (2), (3), (5), and (6) apply to materials included in the same light-emitting layer B; and the relations expressed by the following Formulas (1) to (6) apply to materials included in the same light-emitting layer B, if said light-emitting layer B includes one or more host materials H^B.
It is to be noted that throughout this text, reference will be made to relations between energies of excited states, orbitals, emission maxima and the like of components within the one or more light-emitting layers B of the organic electroluminescent device according to the present invention. It is understood that a relation including energies of two specific components will only apply to light-emitting layers B that include both of these specific components. Additionally, the fact that a relation applies to the devices according to the present invention does not mean that all devices of the invention have to include all components that are referred to in said relation. In particular, a light-emitting layer B includes the one or more host materials H^Bonly optionally, but still reference is made to Formulas representing relations referring to H^B's excited state (S1, T1) or orbital (HOMO, LUMO) energies. It will be understood that such Formulas (and the relations they express) will only apply to light-emitting layers B that include at least one host material H^B. This general note is applicable to all embodiments of the present invention.
Formulas (1) to (6) may have the following meaning:
Formula (1): Preferably, in each light-emitting layer B including one or more host materials H^B, the energy E^LUMO(EET-1) of the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 is lower than the energy E^LUMO(H^B) of the lowest unoccupied molecular orbital LUMO(H^B) of at least one, preferably each host material H^B.
Formula (2): Preferably, in each light-emitting layer B, the energy E^LUMO(EET-1) of the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 is lower than the energy E^LUMO(EET-2) of the lowest unoccupied molecular orbital LUMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2.
Formula (3): Preferably, in each light-emitting layer B, the energy E^LUMO(EET-1) of the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 is lower than the energy E^LUMO(S^B) of the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each small FWHM emitter S^B.
Formula (4): Preferably, in each light-emitting layer B including one or more host materials H^B, the energy E^HOMO(EET-2) of the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 is equal to or higher than the energy E^HOMO(H^B) of the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^B.
Formula (5): Preferably, in each light-emitting layer B, the energy E^HOMO(EET-2) of the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 is equal to or higher than the energy E^HOMO(EET-1) of the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1.
Formula (6): Preferably, in each light-emitting layer B, the energy E^HOMO(EET-2) of the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 is equal to or higher than the energy E^HOMO(S^B) of the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small FWHM emitter S^B.
The inventors have found that the aforementioned surprising beneficial effect on the device performance may particularly be achieved if the materials within each of the one or more light-emitting layers B are preferably selected so that the requirements given by the above-mentioned Formulas (1) to (6) (as far as the respective components are included in the same light-emitting layer B) are fulfilled. It is assumed that the requirements regarding the HOMO- and LUMO-energies of the one or more excitation energy transfer components EET-1, the one or more excitation energy transfer components EET-2, the one or more small FWHM emitters S^Band, optionally, the one or more host materials H^Bincluded in a light-emitting layer B according to the present invention may provide the beneficial effect on the device performance partly due to their impact on the recombination zone (i.e., the region in which excitons are generated by electron-hole-recombination), which is described in more detail in a later subchapter of this text.
Furthermore, the materials within each of the one or more light-emitting layers B of the organic electroluminescent device according to the present invention are preferably selected so that at least one, preferably each, excitation energy transfer component EET-1 as well as at least one, preferably each, excitation energy transfer component EET-2 transfer excitation energy to at least one, preferably each, small FWHM emitter S^B, which then emits light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV. This is also laid out in more detail in a later subchapter of this text.
Fulfilling the aforementioned (preferred) requirements may result in an organic electroluminescent device having a long lifetime, a high quantum yield and exhibiting narrow emission, ideally suitable to achieve the BT-2020 and DCPI3 color gamut.
In a preferred embodiment, at least one, preferably each, light-emitting layer B includes one or more host materials H^B.
In one embodiment of the invention, the organic electroluminescent device includes a light-emitting layer B composed of exactly one (sub)layer including:

- (i) one or more excitation energy transfer components EET-1; and
- (ii) one or more excitation energy transfer components EET-2; and
- (iii) one or more small FWHM emitters S^B; and
- (iv)one or more host materials H^B;
- wherein EET-1 and EET-2 are structurally not identical (in other words: they do not have identical chemical structures).

In one embodiment of the invention, the organic electroluminescent device includes exactly one light-emitting layer B and this light-emitting layer B is composed of exactly one (sub)layer including:

Combination of Sublayers
In a preferred embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B consisting of exactly one (sub)layer. In an even more preferred embodiment of the invention, each light-emitting layer B included in the electroluminescent device according to the invention consists of exactly one (sub)layer. In a still even more preferred embodiment of the invention, the electroluminescent device according to the invention includes exactly one light-emitting layer B and this light-emitting layer B consists of exactly one (sub)layer.
In another embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayer. In another embodiment of the invention, each light-emitting layer B included in the electroluminescent device according to the invention includes more than one sublayer. In another embodiment of the invention, the electroluminescent device according to the invention includes exactly one light-emitting layer B and this light-emitting layer B is composed of more than one sublayer.
In another embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of exactly two sublayers. In another embodiment of the invention, each light-emitting layer B included in the electroluminescent device according to the invention is composed of exactly two sublayers. In another embodiment of the invention, the electroluminescent device according to the invention includes exactly one light-emitting layer B and this light-emitting layer B is composed of exactly two sublayers.
In another embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than two sublayers. In another embodiment of the invention, each light-emitting layer B included in the electroluminescent device according to the invention is composed of more than two sublayers. In another embodiment of the invention, the electroluminescent device according to the invention includes exactly one light-emitting layer B and this light-emitting layer B is composed of more than two sublayers.
In one embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes exactly one, exactly two, or exactly three sublayers.
It is understood that different sublayers of a light-emitting layer B do not necessarily all include the same materials or even the same materials in the same ratios.
It is understood that different sublayers of a light-emitting layer B are adjacent to each other.
In one embodiment of the invention, at least one sublayer includes exactly one excitation energy transfer component EET-1 and exactly one excitation energy transfer component EET-2. In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein at least one sublayer does not include an excitation energy transfer component EET-1.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein at least one sublayer does not include an excitation energy transfer component EET-2.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein at least one sublayer does not include a small FWHM emitter S^B.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein at least one sublayer includes a small FWHM emitter S^Band an excitation energy transfer component EET-1.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein at least one sublayer includes a small FWHM emitter S^Band an excitation energy transfer component EET-2.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein at least one sublayer includes an excitation energy transfer component EET-1 and an excitation energy transfer component EET-2.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein:

- (i) at least one sublayer includes a small FWHM emitter S^Band an excitation energy transfer component EET-1; and
- (ii) at least one sublayer includes a small FWHM emitter S^Band an excitation energy transfer component EET-2.

In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein:

- (i) at least one sublayer includes an excitation energy transfer component EET-1;
- (ii) at least one sublayer includes a small FWHM emitter S^B; and
- (iii) at least one sublayer includes an excitation energy transfer component EET-2,
- wherein preferably a sublayer including a small FWHM emitter S^Bis located between a sublayer including EET-1 and a sublayer including EET-2.

In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B including at least one sublayer including at least one excitation energy transfer component EET-1, at least one excitation energy transfer component EET-2, and at least one small FWHM emitter S^B, and optionally at least one host H^B.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein:

- (i) at least two sublayers includes an excitation energy transfer component EET-1 and an excitation energy transfer component EET-2; and
- (ii) at least one sublayer includes a small FWHM emitter S^B,
- wherein preferably a sublayer including a small FWHM emitter S^Bis located between the two sublayers including EET-1 and EET-2.

Optionally, a higher number (e.g., 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or more than 12) of sublayers may be included (i.e., stacked) in a light-emitting layer B. Preferably, the spatial distance between EET-1 and EET-2 and S^Bis kept short to enable sufficient energy transfer.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein
at least one sublayer includes one or more host materials H^B, one or more excitation energy transfer components EET-1, and one or more small FWHM emitters S^B; and
at least one sublayer includes one or more host materials H^B, one or more excitation energy transfer components EET-2, and one or more small FWHM emitters S^B.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein
at least one sublayer includes one or more host materials H^B, exactly one excitation energy transfer component EET-1, and exactly one small FWHM emitter S^Band
at least one sublayer includes at least one host material H^B, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^B.
In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein

- (i) at least one sublayer includes one or more host materials H^B, one or more excitation energy transfer components EET-1, and one or more small FWHM emitters S^B, but does not include an excitation energy transfer component EET-2; and
- (ii) at least one sublayer includes one or more host material H^B, one or more excitation energy transfer components EET-2, and one or more small FWHM emitters S^B, but does not include an excitation energy transfer component EET-1.

In one embodiment, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of more than one sublayers, wherein

- (i) at least one sublayer includes one or more host materials H^B, exactly one excitation energy transfer component EET-1, and exactly one small FWHM emitter S^Bbut does not include an excitation energy transfer component EET-2; and
- (ii) at least one sublayer includes one or more host materials H^B, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^Bbut does not include an excitation energy transfer component EET-1.

- at least one sublayer includes one or more host materials H^Band one or more excitation energy transfer components EET-1; and
- at least one sublayer includes one or more host materials H^Band one or more small FWHM emitters S^B; and
- at least one sublayer includes one or more host materials H^Band one or more excitation energy transfer components EET-2.

- at least one sublayer includes one or more host materials H^Band exactly one excitation energy transfer component EET-1; and
- at least one sublayer includes one or more host materials H^Band exactly one small FWHM emitter S^B; and
- at least one sublayer includes one or more host materials H^Band exactly one excitation energy transfer component EET-2.

- at least one sublayer includes one or more host materials H^Band one or more excitation energy transfer components EET-1, but does not include an excitation energy transfer component EET-2 and does not include a small FWHM emitter S^B; and
- at least one sublayer includes one or more host materials H^Band one or more small FWHM emitters S^B, but does not include an excitation energy transfer component EET-1 and does not include an excitation energy transfer component EET-2; and
- at least one sublayer includes one or more host materials H^Band one or more excitation energy transfer components EET-2, but does not include an excitation energy transfer component EET-1 and does not include a small FWHM emitter S^B.

- at least one sublayer includes one or more host materials H^Band exactly one excitation energy transfer component EET-1, but does not include an excitation energy transfer component EET-2 and does not include a small FWHM emitter S^B; and
- at least one sublayer includes one or more host materials H^Band exactly one small FWHM emitter S^B, but does not include an excitation energy transfer component EET-1 and does not include an excitation energy transfer component EET-2; and
- at least one sublayer includes one or more host materials H^Band exactly one excitation energy transfer component EET-2, but does not include an excitation energy transfer component EET-1 and does not include a small FWHM emitter S^B.

- at least one sublayer includes one or more host materials H^B, one or more excitation energy transfer components EET-1, and one or more excitation energy transfer components EET-2; and
- at least one sublayer includes one or more host materials H^Band one or more small FWHM emitters S^B.

- at least one sublayer includes one or more host materials H^B, exactly one excitation energy transfer component EET-1, and exactly one excitation energy transfer component EET-2; and
- at least one sublayer includes one or more host materials H^Band exactly one small FWHM emitter S^B.

- at least one sublayer includes one or more host materials H^B, one or more excitation energy transfer components EET-1, and one or more excitation energy transfer components EET-2, but does not include a small FWHM emitter S^B; and
- at least one sublayer includes one or more host materials H^Band one or more small FWHM emitters S^B, but does not include an excitation energy transfer component EET-1 and does not include an excitation energy transfer component EET-2.

- at least one sublayer includes one or more host materials H^B, exactly one excitation energy transfer component EET-1, and exactly one excitation energy transfer component EET-2, but does not include a small FWHM emitter S^B; and
- at least one sublayer includes one or more host materials H^Band exactly one small FWHM emitter S^B, but does not include an excitation energy transfer component EET-1 and does not include an excitation energy transfer component EET-2.

In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes at least one host material H^B, exactly one excitation energy transfer component EET-1, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B, exactly one excitation energy transfer component EET-1, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one excitation energy transfer component EET-1.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one excitation energy transfer component EET-2.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^Band exactly one excitation energy transfer component EET-1.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^Band exactly one excitation energy transfer component EET-2.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^Band exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one excitation energy transfer component EET-1 and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one excitation energy transfer component EET-1 and exactly one excitation energy transfer component EET-2.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one excitation energy transfer component EET-2 and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B, exactly one excitation energy transfer component EET-1, and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B, exactly one excitation energy transfer component EET-1, and exactly one excitation energy transfer component EET-2.
In one embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^B.
In one embodiment of the invention, the organic electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one excitation energy transfer component EET-2, exactly one excitation energy transfer component EET-1, and exactly one small FWHM emitter S^B.
In a preferred embodiment of the invention, the organic electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayers, wherein at least one sublayer includes exactly one host material H^B, exactly one excitation energy transfer component EET-1, exactly one excitation energy transfer component EET-2, and exactly one small FWHM emitter S^B.
In one embodiment of the invention, a sublayer includes exactly one excitation energy transfer component EET-1 and another sublayer includes exactly one excitation energy transfer component EET-2 and exactly one small FWHM emitter S^B.
In one embodiment of the invention, an electroluminescent device according to the invention includes at least one light-emitting layer B including (or consisting of) three or more than three sublayers (B1, B2, B3, . . . ), wherein the first sublayer B1 includes exactly one excitation energy transfer component EET-1, the second sublayer B2 includes exactly one excitation energy transfer component EET-2, and the third sublayer B3 includes exactly one small FWHM emitter S^B. It is understood that the sublayers of a light-emitting layer B can be fabricated in different orders, e.g., B1-B2-B3, B1-B3-B2, B2-B1-B3, B2-B3-B1, B3-B2-B1, B3-B1-B2, and with one or more different sublayers in between. It is preferred that sublayers B1, B2, and B3 are (directly) adjacent to each other, in other words, are in (direct) contact with each other.
In one embodiment of the invention, an electroluminescent device according to the invention includes at least one light-emitting layer B including (or consisting of) two or more than two sublayers (B1, B2, . . . ), wherein the first sublayer B1 includes exactly one excitation energy transfer component EET-1 and exactly one excitation energy transfer component EET-2, and the second sublayer B2 includes exactly one small FWHM emitter S^B. It is understood that the sublayers of a light-emitting layer B can be fabricated in different orders, e.g., B2-B1 or B1-B2, and with one or more different sublayers in between. It is preferred that sublayers B1 and B2 are (directly) adjacent to each other, in other words, are in (direct) contact with each other.
In one embodiment of the invention, an electroluminescent device according to the invention includes at least one light-emitting layer B including (or consisting of) two or more than two sublayers (B1, B2, . . . ), wherein the first sublayer B1 includes exactly one excitation energy transfer component EET-1 and the second sublayer B2 includes exactly one excitation energy transfer component EET-1 and exactly one small FWHM emitter S^B. It is understood that the sublayers of a light-emitting layer B can be fabricated in different orders, e.g., B2-B1 or B1-B2, and with one or more different sublayers in between. It is preferred that sublayers B1 and B2 are (directly) adjacent to each other, in other words, are in (direct) contact with each other.
In one embodiment of the invention, an electroluminescent device according to the invention includes at least one light-emitting layer B including (or consisting of) two or more than two sublayers (B1, B2, . . . ), wherein the first sublayer B1 includes exactly one excitation energy transfer component EET-2 and the second sublayer B2 includes exactly one excitation energy transfer component EET-1 and exactly one small FWHM emitter S^B. It is understood that the sublayers of a light-emitting layer B can be fabricated in different orders, e.g., B2-B1 or B1-B2, and with one or more different sublayers in between. It is understood that the sublayers of a light-emitting layer B can be fabricated in different orders, e.g., B2-B1 or B1-B2, and with one or more different sublayers in between. It is preferred that sublayers B1 and B2 are (directly) adjacent to each other, in other words, are in (direct) contact with each other.
In one embodiment of the invention, an electroluminescent device according to the invention includes at least one light-emitting layer B including (or consisting of) two or more than two sublayers (B1, B2, . . . ), wherein the first sublayer B1 includes exactly one small FWHM emitter S^B, and the second sublayer B2 includes exactly one excitation energy transfer component EET-1 and exactly one excitation energy transfer component EET-2. It is understood that the sublayers of a light-emitting layer B can be fabricated in different orders, e.g., B2-B1 or B1-B2, and with one or more different sublayers in between. It is preferred that sublayers B1 and B2 are (directly) adjacent to each other, in other words, are in (direct) contact with each other.
In a preferred embodiment of the invention, when a light a light-emitting layer B includes more than one sublayer, the sublayer closest to the anode includes at least one excitation energy transfer component EET-1 and the sublayer closest to the cathode includes at least one excitation energy transfer component EET-2.
It is understood that an organic electroluminescent device according to the invention may optionally also include one or more light-emitting layers which do not fulfill the requirements given for a light-emitting layer B in the context of the present invention. In other words: An organic electroluminescent device according to the present invention includes at least one light-emitting layer B as defined herein and may optionally include one or more additional light-emitting layers for which the requirements given herein for a light-emitting layer B do not necessarily apply. In one embodiment of the invention, at least one, but not all light-emitting layers included in the organic electroluminescent device according to the invention are light-emitting layers B as defined within the specific embodiments of the invention.
In a preferred embodiment of the invention, each light-emitting layer included in the organic electroluminescent device according to the invention is a light-emitting layer B as defined within the specific embodiments of the present invention.
Composition of the Light-Emitting Layer(s) (EML) B
In the following, when describing the composition of the one or more light-emitting layers B of the organic electroluminescent device according to the present invention in more detail, reference is in some cases made to the content of certain materials in form of percentages. It is to be noted that, unless stated otherwise for specific embodiments, all percentages refer to weight percentages, which has the same meaning as percent by weight or % by weight ((weight/weight), (w/w), wt. %). It is understood that, when for example stating that the content of one or more small FWHM emitters S^Bin a specific composition is exemplarily 1%, this is to mean that the total weight of the one or more small FWHM emitters S^B(i.e., of all S^B-molecules combined) is 1% by weight, i.e., accounts for 1% of the total weight of the respective light-emitting layer B. It is understood that, whenever the composition of a light-emitting layer B is specified by providing the preferred content of its components in % by weight, the total content of all components adds up to 100% by weight (i.e., the total weight of the respective light-emitting layer B).
The (optionally included)one or more host materials H^B, the one or more excitation energy transfer components EET-1, the one or more excitation energy transfer components EET-2, and the one or more small FWHM emitters S^Bmay be included in the organic electroluminescent device according to the present invention in any amount and any ratio.
In one embodiment, the (at least one) host material H^B, the (at least one) excitation energy transfer component EET-1, the (at least one) excitation energy transfer component EET-2, and the (at least one) small FWHM emitter S^Bmay be included in the organic electroluminescent device in any amount and any ratio.
In a preferred embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayer, wherein each of the at least one sublayers includes more of the one or more host materials H^B(more specific: H^Pand/or H^Nand/or H^BP), than of the one or more small FWHM emitters S^B, according to the weight.
In a preferred embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayer, wherein each of the at least one sublayers includes more of the one or more host materials H^B(more specific: H^Pand/or H^Nand/or H^BP), than of the one or more excitation energy transfer components EET-2, according to the weight.
In a preferred embodiment of the invention, the electroluminescent device according to the invention includes at least one light-emitting layer B composed of one or more than one sublayer, wherein each of the at least one sublayers includes more of the one or more host materials H^B(more specific: H^Pand/or H^Nand/or H^BP), than of the one or more excitation energy transfer components EET-1, according to the weight.
In a preferred embodiment of the invention, each of the at least one light-emitting layers B of the organic electroluminescent device according to the present invention includes more of the one or more excitation energy transfer components EET-1 than of the one or more small FWHM emitters S^B, according to the weight.
In a preferred embodiment of the invention, each of the at least one light-emitting layers B of an organic electroluminescent device according to the present invention includes more of the one or more excitation energy transfer components EET-1 than of the one or more excitation energy transfer components EET-2, according to the weight.
In one embodiment, in the organic electroluminescent device according to the present invention, at least one, preferably each, light-emitting layer B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of:

- (i) 12-60% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-30% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-10% by weight of one or more small FWHM emitters S^B; and
- (iv) 30-87.8% by weight of one or more host materials H^B; and optionally
- (v) 0-57.8% by weight of one or more solvents.

In one embodiment, in the organic electroluminescent device according to the present invention, at least one, preferably each, light-emitting layer B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of:

- (i) 12-60% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-30% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-10% by weight of one or more small FWHM emitters S^B; and
- (iv) 30-87.8% by weight of one or more host materials H^B; and optionally
- (v) 0-3% by weight of one or more solvents.

In a preferred embodiment, in the organic electroluminescent device according to the present invention, at least one, preferably each, light-emitting layer B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of:

- (i) 15-50% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-15% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-5% by weight of one or more small FWHM emitters S^B; and
- (iv) 30-84.8% by weight of one or more host materials H^B; and optionally
- (v) 0-54.8% by weight of one or more solvents.

- (i) 15-50% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-15% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-5% by weight of one or more small FWHM emitters S^B; and
- (iv) 30-84.8% by weight of one or more host materials H^B; and optionally
- (v) 0-3% by weight of one or more solvents.

In an even more preferred embodiment, in the organic electroluminescent device according to the present invention, at least one, preferably each, light-emitting layer B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of:

- (i) 20-50% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-10% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-3% by weight of one or more small FWHM emitters S^B; and
- (iv) 40-79.8% by weight of one or more host materials H^B; and optionally
- (v) 0-39.8% by weight of one or more solvents.

- (i) 20-50% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-10% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-3% by weight of one or more small FWHM emitters S^B; and
- (iv) 40-79.8% by weight of one or more host materials H^B; and optionally
- (v) 0-3% by weight of one or more solvents.

In a still even more preferred embodiment, in the organic electroluminescent device according to the present invention, tat least one, preferably each, light-emitting layer B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of:

- (i) 20-45% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-5% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-3% by weight of one or more small FWHM emitters S^B; and
- (iv) 40-79.8% by weight of one or more host materials H^B; and optionally
- (v) 0-39.8% by weight of one or more solvents.

- (i) 20-45% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-5% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-3% by weight of one or more small FWHM emitters S^B; and
- (iv) 40-79.8% by weight of one or more host materials H^B; and optionally
- (v) 0-3% by weight of one or more solvents.

In a particularly preferred embodiment, in the organic electroluminescent device according to the present invention, the at least one, preferably each, light-emitting layer B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of:

- (i) 20-45% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-3% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-3% by weight of one or more small FWHM emitters S^B; and
- (iv) 40-79.8% by weight of one or more host materials H^B; and optionally
- (v) 0-39.8% by weight of one or more solvents.

- (i) 20-45% by weight of one or more excitation energy transfer components EET-1; and
- (ii) 0.1-3% by weight of one or more excitation energy transfer components EET-2; and
- (iii) 0.1-3% by weight of one or more small FWHM emitters S^B; and
- (iv) 40-79.8% by weight of one or more host materials H^B; and optionally
- (v) 0-3% by weight of one or more solvents.

In a preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes less than or equal to 5% by weight, referred to the total weight of the light-emitting layer B, of one or more excitation energy transfer components EET-2 (meaning the total content of EET-2 in the respective light-emitting layer B is equal to or less than 5% by weight).
In an even more preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes less than or equal to 3% by weight, referred to the total weight of the light-emitting layer B, of one or more excitation energy transfer components EET-2 (meaning the total content of EET-2 in the respective light-emitting layer B is equal to or less than 3% by weight).
In one embodiment of the invention, at least one, preferably each, light-emitting layer B includes less than or equal to 1% by weight, referred to the total weight of the light-emitting layer B, of one or more excitation energy transfer components EET-2 (meaning the total content of EET-2 in the respective light-emitting layer B is equal to or less than 1% by weight).
In a preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes less than or equal to 5% by weight, referred to the total weight of the light-emitting layer B, of one or more small FWHM emitters S^B(meaning the total content of S^Bin the respective light-emitting layer B is equal to or less than 5% by weight).
In an even more preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes less than or equal to 3% by weight, referred to the total weight of the light-emitting layer B, of one or more small FWHM emitters S^B(meaning the total content of S^Bin the respective light-emitting layer B is equal to or less than 3% by weight).
In one embodiment of the invention, at least one, preferably each, light-emitting layer B includes less than or equal to 1% by weight, referred to the total weight of the light-emitting layer B, of one or more small FWHM emitters S^B(meaning the total content of S^Bin the respective light-emitting layer B is equal to or less than 1% by weight).
In a preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes 15-50% by weight, referred to the total weight of the light-emitting layer B, of one or more excitation energy transfer components EET-1 (meaning the total content of EET-1 in the respective light-emitting layer B is in the range of 15-50% by weight).
In a preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes 20-50% by weight, referred to the total weight of the light-emitting layer B, of one or more excitation energy transfer components EET-1 (meaning the total content of EET-1 in the respective light-emitting layer B is in the range of 20-50% by weight).
In a preferred embodiment of the invention, at least one, preferably each, light-emitting layer B includes 20-45% by weight, referred to the total weight of the light-emitting layer B, of one or more excitation energy transfer components EET-1 (meaning the total content of EET-1 in the respective light-emitting layer B is in the range of 20-45% by weight).
As stated previously, it is understood that different sublayers of a light-emitting layer B do not necessarily all include the same materials or even the same materials in the same ratios. It is also understood that different light-emitting layers B optionally included in the organic electroluminescent device according to the present invention do not necessarily all include the same materials or even the same materials in the same ratios.
S1-T1-Energy Relations
In the context of the present invention:

- (i) each excitation energy transfer component EET-1 has a lowermost excited singlet state S1^EET-1with an energy level E(S1^EET-1) and a lowermost excited triplet state T1^EET-1with an energy level E(T1^EET-1); and
- (ii) each excitation energy transfer component EET-2 has a lowermost excited singlet state S1^EET-2with an energy level E(S1^EET-2) and a lowermost excited triplet state T1^EET-2with an energy level E(T1^EET-2); and
- (iii) each small full width at half maximum (FWHM) emitter S^Bhas a lowermost excited singlet state S1^Swith an energy level E(S15) and a lowermost excited triplet state T1s with an energy level E(T15); and
- (iv) each (optionally included) host material H^Bhas a lowermost excited singlet state S1^Hwith an energy level E(S1H) and a lowermost excited triplet state T1^Hwith an energy level E(T1H).

In one embodiment of the invention, the relations expressed by the following Formulas (7) to (9) apply to materials included in the same light-emitting layer B:
E(S1H)>E(S1^EET-1) (7)
E(S1H)>E(S1^EET-2) (8)
E(S1H)>E(S1^S) (9).
Accordingly, the lowermost excited singlet state S1^Hof at least one, preferably each, host material H^Bis preferably higher in energy than the lowermost excited singlet state S1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 (Formula 7) and higher in energy than the lowermost excited singlet state S1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 (Formula 8) and higher in energy than the lowermost excited singlet state S1^Sof at least one, preferably each, small FWHM emitter S^B(Formula 9).
In one embodiment, the aforementioned relations expressed by Formulas (7) to (9) apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In one embodiment of the invention, one or both of the relations expressed by the following Formulas (10) and (11) apply to materials included in the same light-emitting layer B:
E(S1^EET-1)>E(S1^S) (10)
E(S1^EET-2)>E(S1^S) (11).
Accordingly, the lowermost excited singlet state S1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 (Formula 10) and/or the lowermost excited singlet state S1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 (Formula 11) may preferably be higher in energy than the lowermost excited singlet state S1^Sof at least one, preferably each, small FWHM emitter S^B.
In one embodiment, one or both of the aforementioned relations expressed by Formulas (10) and (11) may apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, the relations expressed by the following Formulas (7) to (11) apply to materials included in the same light-emitting layer B:
E(S1H)>E(S1^EET-1) (7)
E(S1H)>E(S1^EET-2) (8)
E(S1H)>E(S1^S) (9)
E(S1^EET-1)>E(S1^S) (10)
E(S1^EET-2)>E(S1^S) (11).
In one embodiment, the aforementioned relations expressed by Formulas (7) to (11) apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, the relations expressed by the following Formulas (13) and (14) apply to materials included in the same light-emitting layer B:
E(T1H)>E(T1^EET-1) (13)
E(T1^EET-1)>E(T1^EET-2) (14);
Accordingly, the lowermost excited triplet state T1^Hof at least one, preferably each, host material H^Bis preferably higher in energy than the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 (Formula 13); Additionally, the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 is preferably equal in energy to or higher in energy than the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 (Formula 14).
In one embodiment, the aforementioned relations expressed by Formulas (13) and (14) apply to materials included in any of the at least one light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, the relations expressed by the following Formulas (14) to (16) apply to materials included in the same light-emitting layer B:
E(T1^EET-1)>E(T1^EET-2) (14)
E(T1EET-2)>E(S1^S) (15)
E(T1EET-2)>E(T1^S) (16).
Accordingly, the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 is preferably equal in energy to or higher in energy than the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 (Formula 14); the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 is preferably higher in energy than the lowermost excited singlet state S1 of at least one, preferably each, small FWHM emitter S^B(Formula 15); the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 is preferably higher in energy than the lowermost excited triplet state T1s of at least one, preferably each, small FWHM emitter S^B(Formula 16).
In one embodiment, the aforementioned relations expressed by Formulas (14) to (16) apply to materials included in any of the at least one light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, the relations expressed by the following Formulas (7) to (10) and the following Formula (15), as far as the respective components are included in the same light emitting layer B, apply:
E(S1H)>E(S1^EET-1) (7)
E(S1H)>E(S1^EET-2) (8)
E(S1H)>E(S1^S) (9)
E(S1^EET-1)>E(S1^S) (10)
E(T1EET-2)>E(S1^S) (15).
In one embodiment, the aforementioned relations expressed by Formulas (7) to (10) and Formula (15) apply to materials included in any of the at least one light-emitting layers B of the organic electroluminescent device according to the invention.
In an alternative embodiment of the invention, the relations expressed by the following Formulas (17) and (10) apply to materials included in the same light-emitting layer B:
E(T1^EET-2)>E(T1^EET-1) (17)
E(S1^EET-1)>E(S1^S) (10).
Accordingly, the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 may be higher in energy than the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 (Formula 17); and the lowermost excited singlet state S1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 may be higher in energy the lowermost excited singlet state S1^Sof at least one, preferably each, small FWHM emitter S^B(Formula 10).
In an alternative embodiment, the aforementioned relations expressed by Formulas (17) and (10) apply to materials included in any of the at least one light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, the relations expressed by the following Formulas (18), (15), (19), and (20) apply to materials included in the same light-emitting layer B:
E(T1H)>E(T1^EET-2) (18)
E(T1^EET-2)>E(S1^S) (15)
E(T1H)>E(S1^EET-1) (19)
E(T1^EET-1)>E(T1^EET-2) (20).
Accordingly, the lowermost excited triplet state T1^Hof at least one, preferably each, host material H^Bis preferably higher in energy than the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 (Formula 18); and the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 is preferably higher in energy than the lowermost excited singlet state S1^Sof at least one, preferably each, small FWHM emitter S^B(Formula 15); and the lowermost excited triplet state T1^Hof at least one, preferably each, host material H^Bis preferably higher in energy than the lowermost excited singlet state S1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 (Formula 19); and the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 is preferably higher in energy than the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 (Formula 20).
In one embodiment, the aforementioned relations expressed by Formulas (18), (15), (19), and (20) apply to materials included in any of the at least one light-emitting layers B of the organic electroluminescent device according to the invention.
In one embodiment of the invention, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 is smaller than 0.3 eV: E(T1^EET-2)-E(T1^EET-1)<0.3 eV and E(T1^EET-1)-E(T1^EET-2)<0.3 eV, respectively.
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 is smaller than 0.3 eV: E(T1^EET-2)−E(T1^EET-1)<0.3 eV and E(T1^EET-1)-E(T1^EET-2)<0.3 eV, respectively.
In one embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-2of the at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited triplet state T1^EET-2of the at least one, preferably each, excitation energy transfer component EET-1 is smaller than 0.3 eV: E(T1^EET-2)-E(T1^EET-1)<0.3 eV and E(T1^EET-1)−E(T1^EET-2)<0.3 eV, respectively.
In one embodiment of the invention, the relation expressed by the following Formula (20) applies to materials included in the same light-emitting layer B:
E(T1EET1)>E(T1^EET-2) (20).
In one embodiment, the aforementioned relation expressed by Formula (20) applies to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, the difference in energy between the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 and the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 is smaller than 0.2 eV: E(T1^EET-1)−E(T1^EET-2)<0.2 eV and E(T1^EET-2)−E(T1^EET-1)<0.2 eV, respectively.
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 and the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 is smaller than 0.2 eV: E(T1^EET-1)−E(T1^EET-2)<0.2 eV and E(T1^EET-2)−E(T1^EET-1)<0.2 eV, respectively.
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-1of at least one, preferably each, excitation energy transfer component EET-1 and the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 is smaller than 0.2 eV: E(T1^EET-1)−E(T1^EET-2)<0.2 eV and E(T1^EET-2)−E(T1^EET-1)<0.2 eV, respectively.
In a preferred embodiment of the invention, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited singlet state S1^Sof at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bis smaller than 0.3 eV: E(T1^EET-2)−E(S15)<0.3 eV and E(S15)−E(T1^EET-2)<0.3 eV, respectively.
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited singlet state S1^Sof at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bis smaller than 0.3 eV: E(T1^EET-2)−E(S1^S)<0.3 eV and E(S1^S)−E(T1^EET-2)<0.3 eV, respectively.
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each excitation energy transfer component EET-2 and the lowermost excited singlet state S1^Sof at least one, preferably each small full width at half maximum (FWHM) emitter S^Bis smaller than 0.3 eV: E(T1^EET-2)−E(S1^S)<0.3 eV and E(S1^S)−E(T1^EET-2)<0.3 eV, respectively.
In a preferred embodiment of the invention, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited singlet state S1^Sof at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bis smaller than 0.2 eV: E(T1^EET-2)−E(S15)<0.2 eV and E(S15)−E(T1^EET-2)<0.2 eV, respectively.
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and lowermost excited singlet state S1^Sof at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bis smaller than 0.2 eV: E(T1^EET-2)−E(S1^S)<0.2 eV and E(S1^S)−E(T1^EET-2)<0.2 eV, respectively.
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowermost excited triplet state T1^EET-2of at least one, preferably each, excitation energy transfer component EET-2 and the lowermost excited singlet state S1^Sof at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bis smaller than 0.2 eV: E(T1^EET-2)−E(S1^S)<0.2 eV and E(S1^S)−E(T1^EET-2)<0.2 eV, respectively.
HOMO-, LUMO-Energy Relations
As stated previously, relates to an organic electroluminescent device including one or more light-emitting layers B, each being composed of one or more sublayers, wherein the one or more sublayers are adjacent to each other and as a whole include:

E ^LUMO(EET-1)<E ^LUMO(H ^B) (1)
E ^LUMO(EET-1)<E ^LUMO(EET-2) (2)
E ^LUMO(EET-1)<E ^LUMO(S ^B) (3)
E ^HOMO(EET-2)≥E ^HOMO(H ^B) (4)
E ^HOMO(EET-2)≥E ^HOMO(EET-1) (5)
E ^HOMO(EET-2)≥E ^HOMO(S ^B) (6).
In one embodiment, the aforementioned relations expressed by Formulas (1) to (6), as far as the respective components are included in the same light-emitting layer B, also apply to materials included in any of one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In one embodiment of the invention, the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is higher in energy than the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B).
E ^HOMO(S ^B)>E ^HOMO(H ^B)
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is higher in energy than the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B):
E ^HOMO(S ^B)>E ^HOMO(H ^B)
In one embodiment of the invention, in each of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is higher in energy than the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B):
E ^HOMO(S ^B)>E ^HOMO(H ^B)
In one embodiment of the invention, the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is higher in energy than the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1):
E ^HOMO(S ^B)>E ^HOMO(EET-1).
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is higher in energy than the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1):
E ^HOMO(S ^B)>E ^HOMO(EET-1).
In one embodiment of the invention, in each of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is higher in energy than the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1):
E ^HOMO(S ^B)>E ^HOMO(EET-1).
In one embodiment of the invention, the highest occupied molecular orbital HOMO(EET-2) of the at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(EET-1) of the at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1):
E ^HOMO(EET-2)>E ^HOMO(EET-1).
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1):
E ^HOMO(EET-2)>E ^HOMO(EET-1).
In one embodiment of the invention, in each of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1):
E ^HOMO(EET-2)>E ^HOMO(EET-1).
In one embodiment of the invention, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B).
E ^HOMO(EET-2)>E ^HOMO(H ^B)
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B).
E ^HOMO(EET-2)>E ^HOMO(H ^B)
In one embodiment of the invention, in each of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B).
E ^HOMO(EET-2)>E ^HOMO(H ^B)
In one embodiment of the invention, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B):
E ^HOMO(EET-2)>E ^HOMO(S ^B)
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B):
E ^HOMO(EET-2)>E ^HOMO(S ^B)
In one embodiment of the invention, in each of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) is higher in energy than the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B):
E ^HOMO(EET-2)>E ^HOMO(S ^B)
In one embodiment of the invention, the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 is equal in energy to or lower in energy than the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small FWHM emitter S^B:
E ^HOMO(EET-1)<E ^HOMO(S ^B)
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 is equal in energy to or lower in energy than the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small FWHM emitter S^B:
E ^HOMO(EET-1)<E ^HOMO(S ^B)
In one embodiment of the invention, in each of the one or more light-emitting layers B, the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 is equal in energy to or lower in energy than the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small FWHM emitter S^B:
E ^HOMO(EET-1)<E ^HOMO(S ^B)
In a preferred embodiment of the invention, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is larger than 0.0 eV and smaller than 0.3 eV:
0.0 eV<E ^HOMO(EET-2)−E ^HOMO(S ^B)<0.8 eV.
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is larger than 0.0 eV and smaller than 0.3 eV:
0.0 eV<E ^HOMO(EET-2)−E ^HOMO(S ^B)<0.8 eV.
In a preferred embodiment of the invention, in each of the at least one light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is larger than 0.0 eV and smaller than 0.3 eV:
0.0 eV<E ^HOMO(EET-2)−E ^HOMO(S ^B)<0.8 eV.
In a preferred embodiment of the invention, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.2 eV), or even larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.3 eV).
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.2 eV), or even larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.3 eV).
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^HOMO(S^B) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.2 eV), or even larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(S^B)>0.3 eV).
In a preferred embodiment of the invention, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^HOMO(EET-1) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^HOMO(EET-2)−E^HOMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.2 eV), more preferably larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.3 eV), even more preferably larger than 0.4 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.4 eV), in particular larger than 0.5 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.5 eV).
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.2 eV), more preferably larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.3 eV), even more preferably larger than 0.4 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.4 eV), in particular larger than 0.5 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.5 eV).
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the highest occupied molecular orbital HOMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^HOMO(EET-2) and the highest occupied molecular orbital HOMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^HOMO(H^B) is larger than 0 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0 eV), preferably larger than 0.1 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.1 eV), more preferably larger than 0.2 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.2 eV), more preferably larger than 0.3 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.3 eV), even more preferably larger than 0.4 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.4 eV), in particular larger than 0.5 eV (E^HOMO(EET-2)−E^HOMO(H^B)>0.5 eV).
In one embodiment of the invention, the difference in energy between the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^LUMO(S^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0.0 eV and smaller than 0.3 eV:
0.0 eV<E ^LUMO(S ^B)−E ^LUMO(EET-1)<0.3 eV.
In one embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^LUMO(S^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0.0 eV and smaller than 0.3 eV:
0.0 eV<E ^LUMO(S ^B)−E ^LUMO(EET-1)<0.3 eV.
In one embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each, small full width at half maximum (FWHM) emitter S^Bhaving an energy E^LUMO(S^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0.0 eV and smaller than 0.3 eV:
0.0 eV<E ^LUMO(S ^B)−E ^LUMO(EET-1)<0.3 eV.
In a preferred embodiment of the invention, the difference in energy between the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each, small FWHM emitter S^Bhaving an energy E^LUMO(S^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.2 eV), particularly preferably larger than 0.3 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.3 eV).
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each, small FWHM emitter S^Bhaving an energy E^LUMO(S^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.2 eV), particularly preferably larger than 0.3 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.3 eV).
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(S^B) of at least one, preferably each, small FWHM emitter S^Bhaving an energy E^LUMO(S^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.2 eV), particularly preferably larger than 0.3 eV (E^LUMO(S^B)−E^LUMO(EET-1)>0.3 eV).
In a preferred embodiment of the invention, the difference in energy between the lowest unoccupied molecular orbital LUMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^LUMO(EET-2) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^LUMO(EET-2) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 having an energy E^LUMO(EET-2) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^LUMO(EET-2)−E^LUMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, the difference in energy between the lowest unoccupied molecular orbital LUMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^LUMO(H^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, in at least one of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^LUMO(H^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.5 eV).
In a preferred embodiment of the invention, in each of the one or more light-emitting layers B, the difference in energy between the lowest unoccupied molecular orbital LUMO(H^B) of at least one, preferably each, host material H^Bhaving an energy E^LUMO(H^B) and the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 having an energy E^LUMO(EET-1) is larger than 0 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0 eV), preferably larger than 0.1 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.1 eV), more preferably larger than 0.2 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.2 eV), more preferably larger than 0.3 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.3 eV), even more preferably larger than 0.4 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.4 eV), in particular larger than 0.5 eV (E^LUMO(H^B)−E^LUMO(EET-1)>0.5 eV).
Relations of Emission Maxima
In one embodiment of the invention, one or both of the relations expressed by Formulas (21) and (22) apply to materials included in the same light-emitting layer B:
|E ^λmax(EET-2)−E ^λmax(S ^B)|<0.30 eV (21),
|E ^λmax(EET-1)−E ^λmax(S ^B)|<0.30 eV (22),

- which means: Within each light-emitting layer B, the difference in energy between the energy of the emission maximum E^λmax(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 given in electron volts (eV) and the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV) is smaller than 0.30 eV (Formula 21); and/or: The difference in energy between the energy of the emission maximum E^λmax(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 given in electron volts (eV) and the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV) is smaller than 0.30 eV (Formula 22).

In one embodiment, one or both of the aforementioned relations expressed by Formulas (21) and (22) apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, one or both of the relations expressed by Formulas (23) and (24) apply to materials included in the same light-emitting layer B:
|E ^λmax(EET-2)−E ^λmax(S ^B)|<0.20 eV (23),
|E ^λmax(EET-1)−E ^λmax(S ^B)|<0.20 eV (24),
which means: Within each light-emitting layer B, the difference in energy between the energy of the emission maximum E^λmax(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 given in electron volts (eV) and the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV) is smaller than 0.20 eV (Formula 23); and/or: The difference in energy between the energy of the emission maximum E^λmax(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 given in electron volts (eV) and the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV) is smaller than 0.20 eV (Formula 24).
In one embodiment, one or both of the aforementioned relations expressed by Formulas (23) and (24) apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In an even more preferred embodiment of the invention, one or both of the relations expressed by Formulas (25) and (26) apply to materials included in the same light-emitting layer B:
|E ^λmax(EET-2)−E ^λmax(S ^B)|<0.10 eV (25),
|E ^λmax(EET-1)−E ^λmax(S ^B)|<0.10 eV (26),

- which means: Within each light-emitting layer B, the difference in energy between the energy of the emission maximum E^λmax(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 given in electron volts (eV) and the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV) is smaller than 0.10 eV (Formula 25); and/or: The difference in energy between the energy of the emission maximum E^λmax(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 given in electron volts (eV) and the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV) is smaller than 0.10 eV (Formula 26).

In one embodiment, one or both the aforementioned relations expressed by Formulas (25) and (26) apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In one embodiment of the invention, the relation expressed by Formula (27) applies to materials included in the same light-emitting layer B:
E ^λmax(EET-2)>E ^λmax(S ^B) (27),

- which means that, within each light-emitting layer B, the energy of the emission maximum E^λmax(EET-2) of at least one, preferably each, excitation energy transfer component EET-2 given in electron volts (eV) is larger than the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV).

In one embodiment, the aforementioned relation expressed by Formula (27) applies to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
In one embodiment of the invention, the relation expressed by Formula (28) applies to materials included in the same light-emitting layer B:
E ^λmax(EET-1)>E ^λmax(S ^B) (28),

- which means that, within each light-emitting layer B, the energy of the emission maximum E^λmax(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 given in electron volts (eV) is larger than the energy of the emission maximum E^λmax(S^B) of at least one, preferably each, small FWHM emitter S^Bgiven in electron volts (eV).

In one embodiment, the aforementioned relation expressed by Formula (28) applies to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
Device Colors & Performance
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which emits light at a distinct color point. According to the present invention, the electroluminescent device (e.g., OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., OLED) according to the invention emits light with a FWHM of the main emission peak of below 0.25 eV, more preferably of below 0.20 eV, even more preferably of below 0.15 eV or even below 0.13 eV.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and exhibits an emission maximum between 500 nm and 560 nm.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and exhibits an emission maximum between 510 nm and 550 nm.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and exhibits an emission maximum between 515 nm and 540 nm.
In a preferred embodiment, the electroluminescent device (e.g., an OLED) exhibits a LT95 value at constant current density J₀=15 mA/cm²of more than 100 h, preferably more than 200 h, more preferably more than 300 h, even more preferably more than 400 h, still even more preferably more than 750 h or even more than 1000 h.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which emits light at a distinct color point. According to the present invention, the electroluminescent device (e.g., OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., OLED) according to the invention emits light with a FWHM of the main emission peak of below 0.25 eV, more preferably of below 0.20 eV, even more preferably of below 0.15 eV or even below 0.13 eV. A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.170) and CIEy (=0.797) color coordinates of the primary color green (CIEx=0.170 and CIEy=0.797) as defined by ITU-R Recommendation BT.2020 (Rec. 2020) and thus may be suited for the use in Ultra High Definition (UHD) displays, e.g., UHD-TVs. In this context, the term “close to” refers to the ranges of CIEx and CIEy coordinates provided at the end of this paragraph. In commercial applications, typically top-emitting (top-electrode is typically transparent) devices are used, whereas test devices as used throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). Accordingly, a further aspect of the present invention relates to an electroluminescent device (e.g., an OLED), whose emission exhibits a CIEx color coordinate of between 0.15 and 0.45 preferably between 0.15 and 0.35, more preferably between 0.15 and 0.30 or even more preferably between 0.15 and 0.25 or even between 0.15 and 0.20 and/or a CIEy color coordinate of between 0.60 and 0.92, preferably between 0.65 and 0.90, more preferably between 0.70 and 0.88 or even more preferably between 0.75 and 0.86 or even between 0.79 and 0.84.
A further embodiment of the present invention relates to an OLED, which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.265) and CIEy (=0.65) color coordinates of the primary color green (CIEx=0.265 and CIEy=0.65) as defined by DCIP3. In this context, the term “close to” refers to the ranges of CIEx and CIEy coordinates provided at the end of this paragraph. In commercial applications, typically top-emitting (top-electrode is typically transparent) devices are used, whereas test devices as used throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). Accordingly, a further aspect of the present invention relates to an OLED, whose bottom emission exhibits a CIEx color coordinate of between 0.2 and 0.45 preferably between 0.2 and 0.35 or more preferably between 0.2 and 0.30 or even more preferably between 0.24 and 0.28 or even between 0.25 and 0.27 and/or a CIEy color coordinate of between 0.60 and 0.9, preferably between 0.6 and 0.8, more preferably between 0.60 and 0.70 or even more preferably between 0.62 and 0.68 or even between 0.64 and 0.66.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and exhibits an emission maximum between 420 nm and 500 nm.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and exhibits an emission maximum between 440 nm and 480 nm.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and exhibits an emission maximum between 450 nm and 470 nm.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 18% or even more than 20% and/or exhibits an emission maximum between 420 nm and 500 nm, preferably between 430 nm and 490 nm, more preferably between 440 nm and 480 nm, even more preferably between 450 nm and 470 nm and/or exhibits a LT80 value at 500 cd/m²of more than 100 h, preferably more than 200 h, more preferably more than 400 h, even more preferably more than 750 h or even more than 1000 h.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which emits light at a distinct color point. According to the present invention, the electroluminescent device (e.g., OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., OLED) according to the invention emits light with a FWHM of the main emission peak of below 0.25 eV, more preferably of below 0.20 eV, even more preferably of below 0.15 eV or even below 0.13 eV.
A further aspect of the present invention relates to an OLED, which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.131) and CIEy (=0.046) color coordinates of the primary color blue (CIEx=0.131 and CIEy=0.046) as defined by ITU-R Recommendation BT.2020 (Rec. 2020) and thus is suited for the use in Ultra High Definition (UHD) displays, e.g., UHD-TVs. In commercial applications, typically top-emitting (top-electrode is transparent) devices are used, whereas test devices as used throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). The CIEy color coordinate of a blue device can be reduced by up to a factor of two, when changing from a bottom- to a top-emitting device, while the CIEx remains nearly unchanged (Okinaka et al., Society for Information Display International Symposium Digest of Technical Papers, 2015, 46(1):312-313, DOI:10.1002/sdtp.10480). Accordingly, a further aspect of the present invention relates to an OLED, whose emission exhibits a CIEx color coordinate of between 0.02 and 0.30, preferably between 0.03 and 0.25, more preferably between 0.05 and 0.20 or even more preferably between 0.08 and 0.18 or even between 0.10 and 0.15 and/or a CIEy color coordinate of between 0.00 and 0.45, preferably between 0.01 and 0.30, more preferably between 0.02 and 0.20 or even more preferably between 0.03 and 0.15 or even between 0.04 and 0.10.
A further aspect of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 1000 cd/m²of more than 8%, more preferably of more than 10%, more preferably of more than 13%, even more preferably of more than 15% or even more than 20% and/or exhibits an emission maximum between 590 nm and 690 nm, preferably between 610 nm and 665 nm, even more preferably between 620 nm and 640 nm and/or exhibits a LT80 value at 500 cd/m²of more than 100 h, preferably more than 200 h, more preferably more than 400 h, even more preferably more than 750 h or even more than 1000 h. Accordingly, a further aspect of the present invention relates to an OLED, whose emission exhibits a CIEy color coordinate of more than 0.25, preferably more than 0.27, more preferably more than 0.29 or even more preferably more than 0.30.
A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED), which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.708) and CIEy (=0.292) color coordinates of the primary color red (CIEx=0.708 and CIEy=0.292) as defined by ITU-R Recommendation BT.2020 (Rec. 2020) and thus is suited for the use in Ultra High Definition (UHD) displays, e.g., UHD-TVs. In this context, the term “close to” refers to the ranges of CIEx and CIEy coordinates provided at the end of this paragraph. In commercial applications, typically top-emitting (top-electrode is transparent) devices are used, whereas test devices as used throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). Accordingly, a further aspect of the present invention relates to an OLED, whose emission exhibits a CIEx color coordinate of between 0.60 and 0.88, preferably between 0.61 and 0.83, more preferably between 0.63 and 0.78 or even more preferably between 0.66 and 0.76 or even between 0.68 and 0.73 and/or a CIEy color coordinate of between 0.25 and 0.70, preferably between 0.26 and 0.55, more preferably between 0.27 and 0.45 or even more preferably between 0.28 and 0.40 or even between 0.29 and 0.35.
Accordingly, a further aspect of the present invention relates to an electroluminescent device (e.g., an OLED), which exhibits an external quantum efficiency at 14500 cd/m²of more than 10%, more preferably of more than 13%, more preferably of more than 15%, even more preferably of more than 17% or even more than 20% and/or exhibits an emission maximum between 590 nm and 690 nm, preferably between 610 nm and 665 nm, even more preferably between 620 nm and 640 nm.
One of the purposes of interest of an organic electroluminescent device may be the generation of light. Thus, the present invention further relates to a method for generating light of a desired wavelength range, including the step of providing an organic electroluminescent device according to any the present invention.
Accordingly, a further aspect of the present invention relates to a method for generating light of a desired wavelength range, including the steps of

- (i) providing an organic electroluminescent device according to the present invention; and
- (ii) applying an electrical current to said organic electroluminescent device.

A further aspect of the present invention relates to a process of making the organic electroluminescent devices by assembling the elements described above. The present invention also relates to a method for generating green light, in particular by using said organic electroluminescent device.
A further aspect of the invention relates to an organic electroluminescent device, wherein at least one, preferably exactly one, of the relations expressed by the following Formulas (29) to (31) applies to materials included in the same light-emitting layer B:
440 nm<λ_max(S ^B)<470 nm (29)
510 nm<λ_max(S ^B)<550 nm (30)
610 nm<λ_max(S ^B)<665 nm (31),

- wherein λ_max(S^B) is the emission maximum of the at least one, preferably each, small FWHM emitter S^Band is given in nanometers (nm).

In one embodiment of the invention at least one, preferably exactly one, of the relations expressed by the following Formulas (29) to (31) applies to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention.
A further aspect of the invention relates to a method for generating light, including the steps of:

- (i) providing an organic electroluminescent device according to the present invention, and
- (ii) applying an electrical current to said organic electroluminescent device.

A further aspect of the invention relates to a method for generating light, including the steps of:

- (i) providing an organic electroluminescent device according to the present invention, and
- (ii) applying an electrical current to said organic electroluminescent device,
- wherein the method is for generating light at a wavelength range selected from one of the following wavelength ranges:
- (i) from 510 nm to 550 nm, or
- (ii) from 440 nm to 470 nm, or
- (iii) from 610 nm to 665 nm.

- (i) providing an organic electroluminescent device according to the present invention, and
- (ii) applying an electrical current to said organic electroluminescent device,
- wherein preferably the method is for generating light with the emission maximum of the main emission peak being within the wavelength range selected from one of the following wavelength ranges:
- (i) from 510 nm to 550 nm, or
- (ii) from 440 nm to 470 nm, or
- (iii) from 610 nm to 665 nm.

The skilled artisan understands that, depending on their structure, the one or more excitation energy transfer components EET-1 (vide infra) and the one or more excitation energy transfer components EET-2 (vide infra) may be used as emitters in organic electroluminescent devices. However, preferably, in the organic electroluminescent device according to the present invention, the main function of the one or more excitation energy transfer components EET-1 and the one or more excitation energy transfer components EET-2 is not the emission of light. In a preferred embodiment, upon applying a voltage (and electrical current), the organic electroluminescent device according to the invention emits light, wherein this emission is mainly (i.e., to an extent of more than 50%, preferably of more than 60%, more preferably of more than 70%, even more preferably of more than 80% or even of more than 90%) attributed to fluorescent light emitted by the one or more small FWHM emitters S^B. In consequence, the organic electroluminescent device according to the present invention preferably also displays a narrow emission, which is expressed by a small FWHM of the main emission peak of below 0.25 eV, more preferably of below 0.20 eV, even more preferably of below 0.15 eV or even below 0.13 eV.
In a preferred embodiment of the invention, the relation expressed by the following Formula (32) applies:
$\begin{matrix} \frac{F W H M^{D}}{F W H M^{SB}} \leq 1.5, & (32) \end{matrix}$

- wherein
- FWHM^Drefers to the full width at half maximum (FWHM) in electron volts (eV) of the main emission peak of the organic electroluminescent device according to the present invention; and
- FWHM^SBrepresents the FWHM in electron volts (eV) of the photoluminescence spectrum (fluorescence spectrum, measured at room temperature, i.e., (approximately) 20° C.) of a spin coated film of the one or more small FWHM emitters S^Bin the one or more host materials H^Bused in the light-emitting layer (EML) of the organic electroluminescent device with the FWHM of FWHM^D. This is to say that the spin-coated film from which FWHM^SBis determined preferably includes the same small FWHM emitter or emitters S^Bin the same weight ratios as the light-emitting layer B of the organic electroluminescent device.

If, for example, the light-emitting layer B includes two small FWHM emitters S^Bwith a concentration of 1% by weight each, the spin-coated film preferably also includes 1% by weight of each of the two small FWHM emitters S^B. In this exemplary case, the matrix material of the spin-coated film would amount to 98% by weight of the spin-coated film. This matrix material of the spin-coated film may be selected to reflect the weight-ratio of the host materials H^Bincluded in the light-emitting layer B of the organic electroluminescent device. If, in the aforementioned example, the light-emitting layer B includes a single host material H^B, this host material would preferably be the sole matrix material of the spin-coated film. If, however, in the aforementioned example, the light-emitting layer B includes two host materials H^B, one with a content of 60% by weight and the other with a content of 20% by weight (i.e., in a ratio of 3:1), the aforementioned matrix material of the spin-coated film (including 1% by weight of each of the two small FWHM emitters S^B) would preferably be a 3:1-mixture of the two host materials H^Bas present in the EML.
If more than one light-emitting layer B is contained in an organic electroluminescent device according to the present invention, the relation expressed by the aforementioned Formula (32) preferably applies to all light-emitting layers B included in the device.
In one embodiment, for at least one light-emitting layer B of the organic electroluminescent device according to the present invention, the aforementioned ratio FWHM^D:FWHM^SBis equal to or smaller than 1.50, preferably 1.40, even more preferably 1.30, still even more preferably 1.20, or even 1.10.
In one embodiment, for each light-emitting layer B of the organic electroluminescent device according to the present invention, the aforementioned ratio FWHM^D:FWHM^SBis equal to or smaller than 1.50, preferably 1.40, even more preferably 1.30, still even more preferably 1.20, or even 1.10.
It should be noted that for the selection of fluorescent emitters for the use as small FWHM emitters S^Bin the context of the present invention, the FWHM value may be determined as described in a later subchapter of this text (briefly: preferably from a spin-coated film of the respective emitter in poly(methyl methacrylate) PMMA with a concentration of 1-5% by weight, in particular 2% by weight, or from a solution, vide infra). This is to say that the FWHM values of the exemplary small FWHM emitters S^Blisted in Table 1^Smay not be understood as FWHM^SBvalues in the context of equation (32) and the associated preferred embodiments of the present invention.
The examples and claims further illustrate the invention.
Host Material(s) H^B
According to the invention, any of the one or more host materials H^Bincluded in any of the one or more light-emitting layers B may be a p-host H^Pexhibiting high hole mobility, an n-host H^Nexhibiting high electron mobility, or a bipolar host material H^BPexhibiting both, high hole mobility and high electron mobility.
An n-host H^Nexhibiting high electron mobility in the context of the present invention preferably has a LUMO energy E^LUMO(H^N) equal to or smaller than −2.50 eV (E^LUMO(H^N) −2.50 eV), preferably E^LUMO(H^N)<−2.60 eV, more preferably E^LUMO(H^N)≤−2.65 eV, and even more preferably E^LUMO(H^N) −2.70 eV. The LUMO is the lowest unoccupied molecular orbital. The energy of the LUMO is determined as described in a later subchapter of this text.
A p-host H^Pexhibiting high hole mobility in the context of the present invention preferably has a HOMO energy E^HOMO(H^P) equal to or higher than −6.30 eV (E^HOMO(H^P)≥−6.30 eV), preferably E^HOMO(H^P)≥−5.90 eV, more preferably E^HOMO(H^P)≥−5.70 eV, even more preferably E^HOMO(H^P)≥−5.40 eV. The HOMO is the highest occupied molecular orbital. The energy of the HOMO is determined as described in a later subchapter of this text.
In a preferred embodiment of the invention, in each light-emitting layer B of an organic electroluminescent device according to the present invention, at least one, preferably each, host material H^Bis a p-host H^Pwhich has a HOMO energy E^HOMO(H^P) equal to or higher than −6.30 eV (E^HOMO(H^P)≥−6.30 eV), preferably E^HOMO(H^P)≥−5.90 eV, more preferably E^HOMO(H^P)≥−5.70 eV, and even more preferably E^HOMO(H^P)≥−5.40 eV. The HOMO is the highest occupied molecular orbital.
In one embodiment of the invention, within each light-emitting layer B, at least one, preferably each p-host H^Pincluded in a light-emitting layer B has a HOMO energy E^HOMO(H^P) smaller than −5.60 eV.
A bipolar host H^BPexhibiting high electron mobility in the context of the present invention preferably has a LUMO energy E^LUMO(H^BP) equal to or smaller than −2.50 eV (E^LUMO(H^BP)≤−2.50 eV), preferably E^LUMO(H^BP)≤−2.60 eV, more preferably E^LUMO(H^BP)≤−2.65 eV, and even more preferably E^LUMO(H^BP)←2.70 eV. The LUMO is the lowest unoccupied molecular orbital. The energy of the LUMO is determined as described in a later subchapter of this text.
A bipolar host H^BPexhibiting high hole mobility in the context of the present invention preferably has a HOMO energy E^HOMO(H^BP) equal to or higher than −6.30 eV (E^HOMO(H^BP)≥−6.30 eV), preferably E^HOMO(H^BP)≥−5.90 eV, more preferably E^HOMO(H^BP)≥−5.70 eV and still even more preferably E^HOMO(H^BP)≥−5.40 eV. The HOMO is the highest occupied molecular orbital. The energy of the HOMO is determined as described in a later subchapter of this text.
In one embodiment of the invention, a bipolar host material H^BPpreferably each bipolar host material H^BP, fulfills both of the following requirements:

- (i) it has a LUMO energy E^LUMO(H^BP) equal to or smaller than −2.50 eV (E^LUMO(H^BP)≤−2.50 eV), preferably E^LUMO(H^BP)≤−2.60 eV, more preferably E^LUMO(H^BP)≤−2.65 eV, and even more preferably E^LUMO(H^BP)≤−2.70 eV; and
- (ii) it has a HOMO energy E^HOMO(H^BP) equal to or higher than −6.30 eV (E^HOMO(H^BP)≤−6.30 eV), preferably E^HOMO(H^BP)≤−5.90 eV, more preferably E^HOMO(H^BP)≤−5.70 eV, and still even more preferably E^HOMO(H^BP)≤−5.40 eV.

The person skilled in the art knows which materials are suitable host materials for use in organic electroluminescent devices such as those of the present invention. See for example: Y. Tao, C. Yang, J. Quin, Chemical Society Reviews 2011, 40, 2943, DOI: 10.1039/C0CS00160K; K. S. Yook, J. Y. Lee, The Chemical Record 2015, 16(1), 159, DOI: 10.1002/tcr.201500221; T. Chatterjee, K.-T. Wong, Advanced Optical Materials 2018, 7(1), 1800565, DOI: 10.1002/adom.201800565; Q. Wang, Q.-S. Tian, Y.-L. Zhang, X. Tang, L.-S. Liao, Journal of Materials Chemistry C 2019, 7, 11329, DOI: 10.1039/C9TC03092A.
Furthermore, for example, US2006006365 (A1), US2006208221 (A1), US2005069729 (A1), EP1205527 (A1), US2009302752 (A1), US20090134784 (A1), US2009302742 (A1), US2010187977 (A1), US2010187977 (A1), US2012068170 (A1), US2012097899 (A1), US2006121308 (A1), US2006121308 (A1), US2009167166 (A1), US2007176147 (A1), US2015322091 (A1), US2011105778 (A1), US2011201778 (A1), US2011121274 (A1), US2009302742 (A1), US2010187977 (A1), US2010244009 (A1), US2009136779 (A1), EP2182040 (A2), US2012202997 (A1), US2019393424 (A1), US2019393425 (A1), US2020168819 (A1), US2020079762 (A1), and US2012292576 (A1) disclose host materials that may be used in organic electroluminescent devices according to the present invention. It is understood that this does not imply that the present invention is limited to organic electroluminescent devices including host materials disclosed in the cited references. It is also understood that any host materials used in the state of the art may also be suitable host materials H^Bin the context of the present invention.
In a preferred embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes one or more p-hosts H^P. In one embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes only a single host material H^Band this host material is a p-host H^P.
In one embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes one or more n-hosts H^N. In another embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes only a single host material H^Band this host material is an n-host H^N.
In one embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes one or more bipolar hosts H^BP. In one embodiment of the invention, each light-emitting layer B of the organic electroluminescent device according to the invention includes only a single host material H^Band this host material is a bipolar host H^BP.
In another embodiment of the invention, at least one light-emitting layer B of the organic electroluminescent device according to the invention includes at least two different host materials H^B. In this case, the more than one host materials H^Bpresent in the respective light-emitting layer B may either all be p-hosts H^Por all be n-hosts H^N, or all be bipolar hosts H^BP, but may also be a combination thereof.
It is understood that, if an organic electroluminescent device according to the invention includes more than one light-emitting layers B, any of them may, independently of the one or more other light-emitting layers B, include either one host material H^Bor more than one host materials H^Bfor which the above-mentioned definitions apply. It is further understood that different light-emitting layers B included in an organic electroluminescent device according to the invention do not necessarily all include the same materials or even the same materials in the same concentrations or ratios.
It is understood that, if a light-emitting layer B of the organic electroluminescent device according to the invention is composed of more than one sublayers, any of them may, independently of the one or more other sublayers, include either one host material H^Bor more than one host materials H^Bfor which the above-mentioned definitions apply. It is further understood that different sublayers of a light-emitting layer B included in an organic electroluminescent device according to the invention do not necessarily all include the same materials or even the same materials in the same concentrations or ratios.
If included in the same light-emitting layer B of the organic electroluminescent device according to the invention, at least one p-host H^Pand at least one n-host H^Nmay optionally form an exciplex. The person skilled in the art knows how to choose pairs of H^Pand H^N, which form an exciplex and the selection criteria, including HOMO- and/or LUMO-energy level requirements of H^Pand H^N. This is to say that, in case exciplex formation may be aspired, the highest occupied molecular orbital (HOMO) of the p-host material H^Pmay be at least 0.20 eV higher in energy than the HOMO of the n-host material H^Nand the lowest unoccupied molecular orbital (LUMO) of the p-host material H^Pmay be at least 0.20 eV higher in energy than the LUMO of the n-host material H^N.
In a preferred embodiment of the invention, at least one host material H^B(e.g., H^P, H^N, and/or H^BP) is an organic host material, which, in the context of the invention, means that it does not contain any transition metals. In a preferred embodiment of the invention, all host materials H^B(H^P, H^N, and/or H^BP) in the electroluminescent device of the present invention are organic host materials, which, in the context of the invention, means that they do not contain any transition metals. Preferably, at least one host material H^B, more preferably all host materials H^B(H^P, H^Nand/or H^BP) predominantly consist of the elements hydrogen (H), carbon (C), and nitrogen (N), but may for example also include oxygen (O), boron (B), silicon (Si), fluorine (F), and bromine (Br).
In one embodiment of the invention, each host material H^Bis a p-host H^P.
In one embodiment of the organic electroluminescent device according to the present invention, in at least one, preferably each, light-emitting layer B, each host material H^Bis a p-host H^P.
In a preferred embodiment of the invention, a p-host H^P, optionally included in any of the one or more light-emitting layers B as a whole (consisting of one (sub)layer or including more than one sublayers), includes or consists of:
one first chemical moiety, including or consisting of a structure according to any of the Formulas H^P-I, H^P-II, H^P-III, H^P-IV, H^P-V, H^P-VI, H^P-VII, H^P-VIII, H^P-IX, and H^P-X:

- and
- one or more second chemical moieties, each including or consisting of a structure according to any of Formulas H^P-XI, H^P-XII, H^P-XIII, H^P-XIV, H^P-XV, H^P-XVI, H^P-XVII, H^P-XVIII, and H^P-XIX:

- wherein each of the one or more second chemical moieties which is present in the p-host material H^Pis linked to the first chemical moiety via a single bond which is represented in the Formulas above by a dashed line;
- wherein
- Z¹is at each occurrence independently of each other selected from the group consisting of a direct bond, C(R^II)₂, C═C(R^II)₂, C═O, C═NR^II, NR^II, O, Si(R^II)₂, S, S(O) and S(O)₂;
- R^Iis at each occurrence independently of each other a binding site of a single bond linking the first chemical moiety to a second chemical moiety or is selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, and ^tBu, and
- Ph, which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: Me, ⁱPr, ^tBu, and Ph;
- wherein at least one R^Iis a binding site of a single bond linking the first chemical moiety to a second chemical moiety;
- R^IIis at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, and
- Ph, which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: Me, ⁱPr, ^tBu, and Ph;
- wherein two or more adjacent substituents R^IImay optionally form a mono or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system so that the fused ring system consisting of a structure according to any of Formulas H^P-XI, H^P-XII, H^P-XIII, H^P-XIV, H^P-XV, H^P-XVI, H^P-XVII, H^P-XVIII, and H^P-XIX as well as the additional rings optionally formed by adjacent substituents R^IIincludes in total 8-60 carbon atoms preferably 12-40 carbon atoms, more preferably 14-32 carbon atoms.

In an even more preferred embodiment of the invention, Z¹is at each occurrence a direct bond and adjacent substituents R^IIdo not combine to form an additional ring system.
In a still even more preferred embodiment of the invention, a p-host H^Poptionally included in the organic electroluminescent device according to the invention is selected from the group consisting of the following structures:
In a preferred embodiment of the invention, an n-host H^Noptionally included in any of the one or more light-emitting layers B as a whole (consisting of one (sub)layer or including more than one sublayers) includes or consists of a structure according to any of the Formulas H^N-1, H^N-II, and H^N-III:

- wherein R^IIIand R^IVare at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, CN, CF₃,
- Ph, which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: Me, ⁱPr, ^tBu, and Ph; and
- a structure represented by any of the Formulas H^N-IV, H^N-V, H^N-VI, H^N-VII, H^N-VIII, H^N-IX, H^N-X, H^N-XI, H^N-XII, H^N-XIII, and H^N-XIV:

- wherein
- the dashed line indicates the binding site of a single bond connecting the structure according to any of Formulas H^N-IV, H^N-V, H^N-VI, H^N-VII, H^N-VIII, H^N-IX, H^N-X, H^N-XI, H^N-XII, H^N-XIII, and H^N-XIV to a structure according to any of the Formulas H^N-I, H^N-II, and H^N-III;
- X¹is oxygen (O), sulfur (S) or C(R^V)₂;
- R^Vis at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, and
- Ph, which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: Me, ⁱPr, ^tBu, and Ph;
- wherein two or more adjacent substituents R^Vmay optionally form a mono or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system so that the fused ring system consisting of a structure according to any of Formulas H^N-IV, H^N-V, H^N-VI, H^N-VII, H^N-VIII, H^N-IX, H^N-X, H^N-XI, H^N-XII, H^N-XIII, and H^N-XIV as well as the additional rings optionally formed by adjacent substituents R^Vincludes in total 8-60 carbon atoms, preferably 12-40 carbon atoms, more preferably 14-32 carbon atoms; and
- wherein in Formulas H^N-I and H^N-II, at least one substituent R^IIIis CN.

In an even more preferred embodiment of the invention, an n-host H^Noptionally included in the organic electroluminescent device according to the invention is selected from the group consisting of the following structures:
In one embodiment of the invention, no n-host H^Nincluded in any light-emitting layer B of the organic electroluminescent device according to the invention contains any phosphine oxide groups and, in particular, no n-host H^Nis bis[2-(diphenylphosphino)phenyl] ether oxide (DPEPO).
Excitation Energy Transfer Components EET-1 and EET-2
For each light-emitting layer B, the one or more excitation energy transfer components EET-1 and the one or more excitation energy transfer components EET-2 are preferably selected so that they are able to transfer excitation energy to at least one, preferably to each, of the one or more small FWHM emitters S^Bincluded in the same light-emitting-layer B of the organic electroluminescent device according to the present invention.
In a preferred embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-1 transfers excitation energy to at least one, preferably to each, small FWHM emitter S^B.
To enable this energy transfer, there preferably is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) (e.g., fluorescence spectrum if EET-1 is a TADF material E^Band phosphorescence spectrum if EET-1 is a phosphorescence material P^B, vide infra) of at least one, preferably each, excitation energy transfer component EET-1 and the absorption spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^Bto which EET-1 is supposed to transfer energy. Thus, in a preferred embodiment, within at least one, preferably each, light-emitting layer B, there is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, excitation energy transfer component EET-1 and the absorption spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^B. The absorption and emission spectra are recorded as described in a later subchapter of this text.
In a preferred embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-2 transfers excitation energy to at least one, preferably to each, small FWHM emitter S^B.
To enable this energy transfer, there preferably is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) (e.g., fluorescence spectrum if EET-2 is a TADF material E^Band phosphorescence spectrum if EET-2 is a phosphorescence material P^B, vide infra) of at least one, preferably each, excitation energy transfer component EET-2 and the absorption spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^Bto which EET-2 is supposed to transfer energy. Thus, in a preferred embodiment, within at least one, preferably each, light-emitting layer B, there is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, excitation energy transfer component EET-2 and the absorption spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^B. The absorption and emission spectra are recorded as described in a later subchapter of this text.
In an even more preferred embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-1 as well as at least one, preferably each, excitation energy transfer component EET-2 included in a light-emitting layer B transfer energy to at least one, preferably to each, small FWHM emitter S^B.
To enable this energy transfer, there preferably is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) (e.g., fluorescence spectrum if the respective EET-1 or EET-2 is a TADF material E^Bor and phosphorescence spectrum if the respective EET-1 or EET-2 is a phosphorescence material P^B, vide infra) of at least one, preferably each, excitation energy transfer component EET-1 as well as of at least one, preferably each, excitation energy transfer component EET-2 and the absorption spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^Bto which EET-1 and EET-2 are supposed to transfer energy.
Thus, in a preferred embodiment of the invention, within at least one, preferably each, light-emitting layer B, both of the following two conditions are fulfilled:

- (i) there is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, excitation energy transfer component EET-1 and the absorption spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^B; and
- (ii) there is spectral overlap between the emission spectrum at room temperature (i.e., (approximately) 20° C.) of at least one, preferably each, excitation energy transfer component EET-2 and the absorption spectrum (i.e., (approximately) 20° C.) of at least one, preferably each, small FWHM emitter S^B;
- wherein the absorption and emission spectra are recorded as described in a later subchapter of this text.

Additionally, the specific embodiments of the present invention that are related to the aforementioned Formulas (10), (11), (14), (15), and (16) provide guidelines on how to select EET-1 and EET-2 so that they may transfer excitation energy to at least one, preferably to each, small FWHM emitter S^B(included in the same light-emitting layer B). Thus, in a preferred embodiment of the invention, the relations expressed by Formulas (10), (11), (14), (15), and (16) apply to materials included in the same light-emitting layer B of an organic electroluminescent device according to the present invention.
It is preferred that the excitation energy transfer components EET-1 and EET-2 are capable of harvesting triplet excitons for light emission from singlet states. The person skilled in the art understands this to mean that an excitation energy transfer component EET-1 and EET-2 may for example display strong spin-orbit coupling to allow for efficient transfer of excitation energy from excited triplet states to excited singlet states. Alternatively triplet harvesting by the excitation energy transfer components EET-1 and EET-2 may for example be achieved by means of reverse intersystem crossing (RISC) to convert excited triplet states into excited singlet states (vide infra). In both cases, excitation energy may be transferred to at least one small FWHM emitter S^Bwhich then emits light from an excited singlet state (preferably from S1^S).
In a preferred embodiment, within at least one, preferably each, light-emitting layer B, the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 has an energy E^LUMO(EET-1) of less than −2.3 eV (i.e., E^LUMO(EET-1)<−2.3 eV).
In another preferred embodiment, within at least one, preferably each, light-emitting layer B, the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 has an energy E^LUMO(EET-1) of less than −2.6 eV: E^LUMO(EET-1)<−2.6 eV.
In a preferred embodiment, within at least one, preferably each, light-emitting layer B, the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 has an energy E^HOMO(EET-1) higher than −6.3 eV: E^HOMO(EET-1)≥−6.3 eV.
In a preferred embodiment, within at least one, preferably each, light-emitting layer B, the following two conditions are fulfilled:

- the lowest unoccupied molecular orbital LUMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 has an energy E^LUMO(EET-1) of less than −2.6 eV: E^LUMO(EET-1)<2.6 eV; and
- the highest occupied molecular orbital HOMO(EET-1) of at least one, preferably each, excitation energy transfer component EET-1 has an energy E^HOMO(EET-1) higher than −6.3 eV: E^HOMO(EET-1)>6.3 eV.

In one embodiment of the invention, within each light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-1 as well as at least one, preferably each, excitation energy transfer component EET-2 fulfill at least one, preferably exactly one, of the following two conditions:

- (i) it exhibits a ΔE_STvalue, which corresponds to the energy difference between E(S1^EET-1) and E(T1^EET-1) and/or to the energy difference between E(S1^EET-2) and E(T1^EET-2) of less than 0.4 eV, preferably of less than 0.3 eV, more preferably of less than 0.2 eV, even more preferably of less than 0.1 eV, or even of less than 0.05 eV; and/or
- (ii) it includes at least one, preferably exactly one, transition metal with a standard atomic weight of more than 40. (meaning that at least one atom within the respective EET-1 and/or EET-2 is a (transition) metal with an atomic weight of more than 40, wherein the transition metal may be in any oxidation state).

In a preferred embodiment, within at least one, preferably each, light-emitting layer B at least one, preferably each excitation energy transfer component EET-1 exhibits a ΔE_STvalue, which corresponds to the energy difference between the lowermost excited singlet state energy level E(S1^EET-1) and the lowermost excited triplet state energy level E(T1^EET-1) of less than 0.4 eV, preferably of less than 0.3 eV, more preferably of less than 0.2 eV, even more preferably of less than 0.1 eV, or even of less than 0.05 eV.
In a preferred embodiment, within at least one, preferably each, light-emitting layer B at least one, preferably each excitation energy transfer component EET-2 includes at least one, preferably exactly one, transition metal with a standard atomic weight of more than 40 (meaning that at least one atom within the respective EET-2 is a (transition) metal with an atomic weight of more than 40, wherein the transition metal may be in any oxidation state).
In a preferred embodiment of the invention, within each light-emitting layer B both of the following two conditions:

- (i) at least one, preferably each, excitation energy transfer component EET-1 exhibits a ΔE_STvalue, which corresponds to the energy difference between the lowermost excited singlet state energy level E(S1^EET-1) and the lowermost excited triplet state energy level E(T1^EET-1) of less than 0.4 eV, preferably of less than 0.3 eV, more preferably of less than 0.2 eV, even more preferably of less than 0.1 eV, or even of less than 0.05 eV; and
- (ii) at least one, preferably each, excitation energy transfer component EET-2 includes at least one, preferably exactly one, transition metal with a standard atomic weight of more than 40 (meaning that at least one atom within the respective EET-2 is a (transition) metal with an atomic weight of more than 40, wherein the transition metal may be in any oxidation state).

In a preferred embodiment of the invention, in each light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-1 as well as at least one, preferably each, excitation energy transfer component EET-2 fulfill at least one, preferably exactly one, of the following two conditions:

- (i) it exhibits an ΔE_STvalue, which corresponds to the energy difference between the lowermost excited singlet state energy level E(S1^E) (equals E(S1^EET-1) or E(S1^EET-2), respectively) and the respective lowermost excited triplet state energy level E(T1^E) (equals E(T1^EET-1) or E(T1^EET-2), respectively), of less than 0.4 eV, preferably of less than 0.3 eV, more preferably of less than 0.2 eV, even more preferably of less than 0.1 eV, or even of less than 0.05 eV (vide infra); and/or
- (ii) it includes iridium (Ir) or platinum (Pt) (meaning that at least one atom within the respective EET-1 or EET-2 is iridium(Ir) or platinum (Pt), wherein Ir and Pt may be in any oxidation state, vide infra).

In a preferred embodiment, within at least one, preferably each, light-emitting layer B at least one, preferably each excitation energy transfer component EET-2 includes iridium (Ir) or platinum (Pt) (meaning that at least one atom within the respective EET-2 is iridium(Ir) or platinum (Pt), wherein Ir and Pt may be in any oxidation state, vide infra).
In a preferred embodiment of the invention, within each light-emitting layer B both of the following two conditions:

- (i) at least one, preferably each, excitation energy transfer component EET-1 exhibits a ΔE_STvalue, which corresponds to the energy difference between the lowermost excited singlet state energy level E(S1^EET-1) and the lowermost excited triplet state energy level E(T1^EET-1) of less than 0.4 eV, preferably of less than 0.3 eV, more preferably of less than 0.2 eV, even more preferably of less than 0.1 eV, or even of less than 0.05 eV; and
- (ii) at least one, preferably each, excitation energy transfer component EET-2 includes iridium (Ir) or platinum (Pt) (meaning that at least one atom within the respective EET-2 is iridium(Ir) or platinum (Pt), wherein Ir and Pt may be in any oxidation state, vide infra).

Preferably, the one or more excitation energy transfer components EET-1 as well as the one or more excitation energy transfer components EET-2 are independently of each other selected from the group consisting of TADF materials E^Bphosphorescence materials P^B, and exciplexes (vide infra).
More preferably, the one or more excitation energy transfer components EET-1 as well as the one or more excitation energy transfer components EET-2 are independently of each other selected from the group consisting of TADF materials E^Band phosphorescence materials P^B(vide infra).
As stated previously, a light-emitting layer B in the context of the present invention includes one or more excitation energy transfer components EET-1 and one or more excitation energy transfer components EET-2, wherein these two species are not identical (i.e., they do not have the same chemical Formulas). This means that, within each light-emitting layer B of the organic electroluminescent device according to the present invention, the one or more excitation energy transfer components EET-1 and the one or more excitation energy transfer components EET-2 may for example be independently of each other selected from the group consisting of TADF-materials E^Bphosphorescence materials P^Band exciplexes, but in any case, their chemical structures may not be identical. This is to say that within a light-emitting layer B no EET-1 has the same chemical Formula (or structure) as an EET-2.
In a preferred embodiment of the invention, in each light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-1 as well as at least one, preferably each, excitation energy transfer component EET-2 are independently of each other selected from:

- (i) a thermally activated delayed fluorescence (TADF) material E^Bas defined herein; and
- (ii) a phosphorescence material P^Bas defined herein; and
- an exciplex as defined herein.

In a preferred embodiment, each excitation energy transfer component EET-1 as well as each excitation energy transfer component EET-2 included in the organic electroluminescent device according to the present invention are independently of each other selected from:

- (i) a thermally activated delayed fluorescence (TADF) material E^Bas defined herein; and
- (ii) a phosphorescence material P^Bas defined herein; and
- (iii) an exciplex as defined herein.

In an even more preferred embodiment of the invention, in each light-emitting layer B, at least one, preferably each, excitation energy transfer component EET-1 as well as at least one, preferably each, excitation energy transfer component EET-2 are independently of each other selected from:

- (i) a thermally activated delayed fluorescence (TADF) material E^Bas defined herein; and
- (ii) a phosphorescence material P^Bas defined herein.

In a particularly preferred embodiment, each excitation energy transfer component EET-1 included in the organic electroluminescent device according to the present invention is a TADF material E^Bas defined herein.
In a particularly preferred embodiment, each excitation energy transfer component EET-2 included in the organic electroluminescent device according to the present invention is a phosphorescence material P^Bas defined herein.
In a particularly preferred embodiment of the invention, in at least one, preferably in each light-emitting layer B, both of the following conditions are fulfilled:

- (i) at least one, preferably each, excitation energy transfer component EET-1 is a TADF material E^Bas defined herein; and
- (ii) at least one, preferably each, excitation energy transfer component EET-2 is phosphorescence material P^Bas defined herein.

In a particularly preferred embodiment, each excitation energy transfer component EET-1 included in the organic electroluminescent device according to the present invention is a TADF material E^Bas defined herein and each excitation energy transfer component EET-2 included in the organic electroluminescent device according to the present invention is a phosphorescence material P^Bas defined herein.
In an alternative embodiment of the invention, in at least one, preferably in each light-emitting layer B, both of the following conditions are fulfilled:

- (i) at least one, preferably each, excitation energy transfer component EET-1 is a TADF material E^Bas defined herein; and
- (ii) at least one, preferably each, excitation energy transfer component EET-2 is a TADF material E^Bas defined herein.

In an alternative embodiment of the invention, in at least one, preferably in each light-emitting layer B, both of the following conditions are fulfilled:

- (i) at least one, preferably each, excitation energy transfer component EET-1 is a phosphorescence material P^Bas defined herein; and
- (ii) at least one, preferably each, excitation energy transfer component EET-2 is phosphorescence material P^Bas defined herein.

In the following. TADF materials E^B, phosphorescence materials P^Band exciplexes in the context of the present invention will be disclosed in more detail.
It is understood that any preferred features, properties, and embodiments described in the following for a TADF material E^Bmay also apply to any excitation energy transfer component EET-1 or EET-2, if the respective excitation energy transfer component is selected to be a TADF material E^B, without this being indicated for every specific embodiment referring to TADF materials E^B.
It is also understood that any preferred features, properties, and embodiments described in the following for a phosphorescence material P^Bmay also apply to any excitation energy transfer component EET-1 or EET-2, if the respective excitation energy transfer component is selected to be a phosphorescence material P^Bwithout this being indicated for every specific embodiment referring to phosphorescence materials P^B.
It is understood that any preferred features, properties, and embodiments described in the following for an exciplex may also apply to any excitation energy transfer component EET-1 or EET-2, if the respective excitation energy transfer component is selected to be an exciplex, without this being indicated for every specific embodiment referring to exciplexes.
TADF Material(s) E^B
As known to the person skilled in the art, light emission from emitter materials (i.e., emissive dopants), for example in organic light-emitting diodes (OLEDs), may include fluorescence from excited singlet states (typically the lowermost excited singlet state S1) and phosphorescence from excited triplet states (typically the lowermost excited triplet state T1).
In the context of the present invention, a fluorescence emitter is capable of emitting light at room temperature (i.e., (approximately) 20° C.) upon electronic excitation (for example in an organic electroluminescent device), wherein the emissive excited state is a singlet state (typically the lowermost excited singlet state S1). Fluorescence emitters F usually display prompt (i.e., direct) fluorescence on a timescale of nanoseconds, when the initial electronic excitation (for example by electron hole recombination) affords an excited singlet state of the emitter.
In the context of the present invention, a delayed fluorescence material is a material that is capable of reaching an excited singlet state (typically the lowermost excited singlet state S1) by means of reverse intersystem crossing (RISC; in other words: up intersystem crossing or inverse intersystem crossing) from an excited triplet state (typically from the lowermost excited triplet state T1) and that is furthermore capable of emitting light when returning from the so-reached excited singlet state (typically S1) to its electronic ground state. The fluorescence emission observed after RISC from an excited triplet state (typically T1) to the emissive excited singlet state (typically S1) occurs on a timescale (typically in the range of microseconds) that is slower than the timescale on which direct (i.e., prompt) fluorescence occurs (typically in the range of nanoseconds) and is thus referred to as delayed fluorescence (DF). When RISC from an excited triplet state (typically from T1) to an excited singlet state (typically to S1), occurs through thermal activation, and if the so populated excited singlet state emits light (delayed fluorescence emission), the process is referred to as thermally activated delayed fluorescence (TADF). Accordingly, a TADF material is a material that is capable of emitting thermally activated delayed fluorescence (TADF) as explained above. It is known to the person skilled in the art that, when the energy difference ΔE_STbetween the lowermost excited singlet state energy level E(S1^S) and the lowermost excited triplet state energy level E(T1) of a fluorescence emitter is reduced, population of the lowermost excited singlet state from the lowermost excited triplet state by means of RISC may occur with high efficiency. Thus, it forms part of the common knowledge of those skilled in the art that a TADF material will typically have a small ΔE_STvalue (vide infra).
The occurrence of (thermally activated) delayed fluorescence may for example be analyzed based on the decay curve obtained from time-resolved (i.e., transient) photoluminescence (PL) measurements. PL emission from a TADF material is divided into an emission component from excited singlet states (typically S1) generated by the initial excitation and an emission component from excited states singlet (typically S1) generated via excited triplet states (typically T1) by means of RISC. There is typically a significant difference in time between emission from the singlet excited states (typically S1) formed by the initial excitation and from the singlet excited states (typically S1) reached via RISC from excited triplet states (typically T1).
TADF materials preferably fulfill the following two conditions regarding the full decay dynamics:

- (i) the decay dynamics exhibit two time regimes, one typically in the nanosecond (ns) range and the other typically in the microsecond (μs) range; and
- (ii) the shapes of the emission spectra in both time regimes coincide;
- wherein, the fraction of light emitted in the first decay regime is taken as prompt fluorescence and the fraction emitted in the second decay regime is taken as delayed fluorescence. The PL measurements may be performed using a spin-coated film of the respective emitter (i.e., the assumed TADF material) in poly(methyl methacrylate) (PMMA) with 1-10% by weight, in particular 10% by weight of the respective emitter.

In order to evaluate whether the preferred criterion (i) is fulfilled (i.e., the decay dynamics exhibit two time regimes, one typically in the nanosecond (ns) range and the other typically in the microsecond (μs) range), TCSPC (Time-correlated single-photon counting) may typically be used (vide infra) and the full decay dynamics may typically be analyzed as stated below. Alternatively, transient photoluminescence measurements with spectral resolution may be performed (vide infra).
In order to evaluate whether the preferred criterion (ii) is fulfilled (i.e., the shapes of the emission spectra in both time regimes coincide), transient photoluminescence measurements with spectral resolution may typically be performed (vide infra).
Experimental detail on these measurements is provided in a later subchapter of this text.
The ratio of delayed and prompt fluorescence (n-value) may be calculated by the integration of respective photoluminescence decays in time as laid out in a later subchapter of this text.
In the context of the present invention, a TADF material preferably exhibits an n-value (ratio of delayed to prompt fluorescence) larger than 0.05 (n>0.05), more preferably larger than 0.15 (n>0.15), more preferably larger than 0.25 (n>0.25), more preferably larger than 0.35 (n>0.35), more preferably larger than 0.45 (n>0.45), more preferably larger than 0.55 (n>0.55), more preferably larger than 0.65 (n>0.65), more preferably larger than 0.75 (n>0.75), more preferably larger than 0.85 (n>0.85), or even larger than 0.95 (n>0.95).
According to the invention, a thermally activated delayed fluorescence (TADF) material E^Bis characterized by exhibiting a ΔE_STvalue, which corresponds to the energy difference between the lowermost excited singlet state energy level E(S1^E) and the lowermost excited triplet state energy level E(T1^E), of less than 0.4 eV, preferably of less than 0.3 eV, more preferably of less than 0.2 eV, even more preferably of less than 0.1 eV, or even of less than 0.05 eV. Thus, ΔE_STof a TADF material E^Baccording to the invention may be sufficiently small to allow for thermal repopulation of the lowermost excited singlet state S1^Efrom the lowermost excited triplet state T1^E(also referred to as up-intersystem crossing or reverse intersystem crossing, RISC) at room temperature (RT, i.e., (approximately) 20° C.).
Preferably, in the context of the present invention, TADF materials E^Bdisplay both, prompt fluorescence and delayed fluorescence (when the emissive S1^Estate is reached via thermally activated RISC from the T1^Estate).
It is understood that a small FWHM emitter S^Bincluded in a light-emitting layer B of an organic electroluminescent device according to the invention may optionally also have a ΔE_STvalue of less than 0.4 eV and exhibit thermally activated delayed fluorescence (TADF). However, for any small FWHM emitter S^Bin the context of the invention, this is only an optional feature.
In a preferred embodiment of the invention, there is spectral overlap between the emission spectrum of at least one TADF material E^Band the absorption spectrum of at least one small FWHM emitter S^B(when both spectra are measured under comparable conditions). In this case, the at least one TADF material E^Bmay transfer energy to the at least one small FWHM emitter S^B.
According to the invention, a TADF material E^Bhas an emission maximum in the visible wavelength range of from 380 nm to 800 nm, typically measured from a spin-coated film with 10% by weight of the respective TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In one embodiment of the invention, each TADF material E^Bhas an emission maximum in the deep blue wavelength range of from 380 nm to 470 nm, preferably 400 nm to 470 nm, typically measured from a spin-coated film with 10% by weight of the TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In one embodiment of the invention, each TADF material E^Bhas an emission maximum in the green wavelength range of from 480 nm to 560 nm, preferably 500 nm to 560 nm, typically measured from a spin-coated film with 10% by weight of the TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In one embodiment of the invention, each TADF material E^Bhas an emission maximum in the red wavelength range of from 600 nm to 665 nm, preferably 610 nm to 665 nm, typically measured from a spin-coated film with 10% by weight of the TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In a preferred embodiment of the invention, the emission maximum (peak emission) of a TADF material E^Bis at a shorter wavelength than the emission maximum (peak emission) of a small FWHM emitter S^Bin the context of the present invention.
In a preferred embodiment of the invention, each TADF material E^Bis an organic TADF material, which, in the context of the invention, means that it does not contain any transition metals. Preferably, each TADF material E^Baccording to the invention predominantly consists of the elements hydrogen (H), carbon (C), and nitrogen (N), but may for example also include oxygen (O), boron (B), silicon (Si), fluorine (F), and bromine (Br).
In a preferred embodiment of the invention, each TADF material E^Bhas a molecular weight equal to or smaller than 800 g/mol.
In one embodiment of the invention, a TADF emitter E^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 30%, typically measured from a spin-coated film with 10% by weight of the TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In a preferred embodiment of the invention, a TADF emitter E^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 50%, typically measured from a spin-coated film with 10% by weight of the TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In an even more preferred embodiment of the invention, a TADF emitter E^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 70%, typically measured from a spin-coated film with 10% by weight of the TADF material E^Bin poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.).
In one embodiment of the invention, a TADF material E^B

- (i) is characterized by exhibiting a ΔE_STvalue, which corresponds to the energy difference between the lowermost excited singlet state energy level E(S1^E) and the lowermost excited triplet state energy level E(T1^E), of less than 0.4 eV; and
- (ii) displays a photoluminescence quantum yield (PLQY) of more than 30%.

In one embodiment of the invention, the energy E^LUMO(E^B) of the lowest unoccupied molecular orbital LUMO(E^B) of each TADF material E^Bis smaller than −2.6 eV.
It is to be noted that, although being typically capable of emitting fluorescence and (thermally activated) delayed fluorescence, a TADF material E^Boptionally included in the organic electroluminescent device of the invention as excitation energy transfer component EET-1 and/or EET-2 preferably mainly functions as “energy pump” and not as emitter material. This is to say that a phosphorescence material P^Bincluded in a light-emitting layer B preferably mainly transfers excitation energy to one or more small FWHM emitters S^Bthat in turn serve as the main emitter material(s). The main function of a phosphorescence material P^Bin a light-emitting layer B is preferably not the emission of light. However, it may emit light to some extent.
The person skilled in the art knows how to design TADF materials (molecules) E^Baccording to the invention and the structural features that such molecules typically display. Briefly, to facilitate the reverse intersystem crossing (RISC), ΔE_STis usually decreased and, in the context of the present invention, ΔE_STis smaller than 0.4 eV, as stated above. This is oftentimes achieved by designing TADF molecules E^Bso that the HOMO and LUMO are spatially largely separated on (electron-) donor and (electron-) acceptor groups, respectively. These groups are usually bulky or connected via spiro-junctions so that they are twisted and the spatial overlap of the HOMO and the LUMO is reduced. However, minimizing the spatial overlap of the HOMO and the LUMO also results in a reduction of the photoluminescence quantum yield (PLQY) of the TADF material, which is unfavorable.
Therefore, in practice, these two effects are both taken into account to achieve a reduction of ΔE_STas well as a high PLQY.
One common approach for the design of TADF materials is to covalently attach one or more (electron-) donor moieties on which the HOMO is distributed and one or more (electron-) acceptor moieties on which the LUMO is distributed to the same bridge, herein referred to as linker group. A TADF material E^Bmay for example also include two or three linker groups which are bonded to the same acceptor moiety and additional donor and acceptor moieties may be bonded to each of these two or three linker groups.
One or more donor moieties and one or more acceptor moieties may also be bonded directly to each other (without the presence of a linker group).
Typical donor moieties are derivatives of diphenyl amine, carbazole, acridine, phenoxazine, and related structures.
Benzene-, biphenyl-, and to some extend also terphenyl-derivatives are common linker groups.
Nitrile groups are very common acceptor moieties in TADF molecules and known examples thereof include:

- (i) carbazolyl dicyanobenzene compounds
  - such as 2CzPN (4,5-di(9H-carbazol-9-yl)phthalonitrile), DCzIPN (4,6-di(9H-carbazol-9-yl)isophthalonitrile), 4CzPN (3,4,5,6-tetra(9H-carbazol-9-yl)phthalonitrile), 4CzIPN (2,4,5,6-Tetra(9H-carbazol-9-yl)isophthalonitrile), 4CzTPN (2,4,5,6-tetra(9H-carbazol-9-yl)terephthalonitrile), and derivatives thereof;
- (ii) carbazolyl cyanopyridine compounds
  - such as 4CzCNPy (2,3,5,6-tetra(9H-carbazol-9-yl)-4-cyanopyridine) and derivatives thereof;
- (iii) carbazolyl cyanobiphenyl compounds
  - such as CNBPCz (4,4′,5,5′-tetra(9H-carbazol-9-yl)-[1,1′-biphenyl]-2,2′-dicarbonitrile), CzBPCN (4,4′,6,6′-tetra(9H-carbazol-9-yl)-[1,1′-biphenyl]-3,3′-dicarbonitrile), DDCzIPN (3,3′,5,5′-tetra(9H-carbazol-9-yl)-[1,1′-biphenyl]-2,2′,6,6′-tetracarbonitrile) and derivatives thereof;
- wherein in these materials, one or more of the nitrile groups may be replaced my fluorine (F) or trifluoromethyl (CF₃) as acceptor moieties.

Nitrogen-heterocycles such as triazine-, pyrimidine-, triazole-, oxadiazole-, thiadiazole-, heptazine-, 1,4-diazatriphenylene-, benzothiazole-, benzoxazole-, quinoxaline-, and diazafluorene-derivatives are also well-known acceptor moieties used for the construction of TADF molecules. Known examples of TADF molecules including for example a triazine acceptor include PIC-TRZ (7,7′-(6-([1,1′-biphenyl]-4-yl)-1,3,5-triazine-2,4-diyl)bis(5-phenyl-5,7-dihydroindolo[2,3-b]carbazole)), mBFCzTrz (5-(3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-5H-benzofuro[3,2-c]carbazole), and DCzTrz (9,9′-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole)).
Another group of TADF materials includes diaryl ketones such as benzophenone or (heteroaryl)aryl ketones such as 4-benzoylpyridine, 9,10-anthraquinone, 9H-xanthen-9-one, and derivatives thereof as acceptor moieties to which the donor moieties (usually carbazolyl substituents) are bonded. Examples of such TADF molecules include BPBCz (bis(4-(9′-phenyl-9H,9′H-[3,3′-bicarbazol]-9-yl)phenyl)methanone), mDCBP ((3,5-di(9H-carbazol-9-yl)phenyl)(pyridin-4-yl)methanone), AQ-DTBu-Cz (2,6-bis(4-(3,6-di-tert-butyl-9H-carbazol-9-yl)phenyl)anthracene-9,10-dione), and MCz-XT (3-(1,3,6,8-tetramethyl-9H-carbazol-9-yl)-9H-xanthen-9-one), respectively.
Sulfoxides, in particular diphenyl sulfoxides, are also commonly used as acceptor moieties for the construction of TADF materials and known examples include 4-PC-DPS (9-phenyl-3-(4-(phenylsulfonyl)phenyl)-9H-carbazole), Di^tBu-DPS (9,9′-(sulfonylbis(4,1-phenylene))bis(9H-carbazole)), and TXO-PhCz (2-(9-phenyl-9H-carbazol-3-yl)-9H-thioxanthen-9-one 10,10-dioxide).
Exemplarily, all groups of TADF molecules mentioned above may provide suitable TADF materials E^Bfor use according to the present invention, given that the specific materials fulfills the aforementioned basic requirement, namely the ΔE_STvalue being smaller than 0.4 eV.
The person skilled in the art knows that not only the structures named above, but many more materials may be suitable TADF materials E^Bin the context of the present invention. The skilled artisan is familiar with the design principles of such molecules and also knows how to design such molecules with a certain emission color (e.g., blue, green or red emission).
See for example: H. Tanaka, K. Shizu, H. Nakanotani, C. Adachi, Chemistry of Materials 2013, 25(18), 3766, DOI: 10.1021/cm402428a; J. Li, T. Nakagawa, J. MacDonald, Q. Zhang, H. Nomura, H. Miyazaki, C. Adachi, Advanced Materials 2013, 25(24), 3319, DOI: 10.1002/adma.201300575; K. Nasu, T. Nakagawa, H. Nomura, C.-J. Lin, C.-H. Cheng, M.-R. Tseng, T. Yasudaad, C. Adachi, Chemical Communications 2013, 49(88), 10385, DOI: 10.1039/c3cc44179b; Q. Zhang, B. Li1, S. Huang, H. Nomura, H. Tanaka, C. Adachi, Nature Photonics 2014, 8(4), 326, DOI: 10.1038/nphoton.2014.12; B. Wex, B. R. Kaafarani, Journal of Materials Chemistry C 2017, 5, 8622, DOI: 10.1039/c7tc02156a; Y. Im, M. Kim, Y. J. Cho, J.-A. Seo, K. S. Yook, J. Y. Lee, Chemistry of Materials 2017, 29(5), 1946, DOI: 10.1021/acs.chemmater.6b05324; T.-T. Bui, F. Goubard, M. Ibrahim-Ouali, D. Gigmes, F. Dumur, Beilstein Journal of Organic Chemistry 2018, 14, 282, DOI: 10.3762/bjoc.14.18; X. Liang, Z.-L. Tu, Y.-X. Zheng, Chemistry−A European Journal 2019, 25(22), 5623, DOI: 10.1002/chem.201805952.
Furthermore, for example, US2015105564 (A1), US2015048338 (A1), US2015141642 (A1), US2014336379 (A1), US2014138670 (A1), US2012241732 (A1), EP3315581 (A1), EP3483156 (A1), and US2018053901 (A1) disclose TADF materials E^Bthat may be used in organic electroluminescent devices according to the present invention. It is understood that this does not imply that the present invention is limited to organic electroluminescent devices including TADF materials disclosed in the cited references. It is also understood that any TADF materials used in the state of the art may also be suitable TADF materials E^Bin the context of the present invention.
In one embodiment of the invention, each TADF material E^Bincludes one or more chemical moieties independently of each other selected from the group consisting of CN, CF₃, and an optionally substituted 1,3,5-triazinyl group.
In one embodiment of the invention, each TADF material E^Bincludes one or more chemical moieties independently of each other selected from the group consisting of CN and an optionally substituted 1,3,5-triazinyl group.
In one embodiment of the invention, each TADF material E^Bincludes one or more optionally substituted 1,3,5-triazinyl group.
In one embodiment of the invention, each TADF material E^Bincludes one or more chemical moieties independently of each other selected from an amino group, indolyl, carbazolyl, and derivatives thereof, all of which may be optionally substituted, wherein these groups may be bonded to the core structure of the respective TADF molecule via a nitrogen (N) or via a carbon (C) atom, and wherein substituents bonded to these groups may form mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring systems.
In a preferred embodiment of the invention, the at least one, preferably each TADF material E^Bincludes

- one or more first chemical moieties, independently of each other selected from an amino group, indolyl, carbazolyl, and derivatives thereof, all of which may be optionally substituted, wherein these groups may be bonded to the core structure of the respective TADF molecule via a nitrogen (N) or via a carbon (C) atom, and wherein substituents bonded to these groups may form mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring systems;
- one or more second chemical moieties, independently of each other selected from the group consisting of CN, CF₃, and an optionally substituted 1,3,5-triazinyl group.

In an even more preferred embodiment of the invention, the at least one, preferably each TADF material E^Bincludes

- one or more first chemical moieties, independently of each other selected from an amino group, indolyl, carbazolyl, and derivatives thereof, all of which may be optionally substituted, wherein these groups may be bonded to the core structure of the respective TADF molecule via a nitrogen (N) or via a carbon (C) atom, and wherein substituents bonded to these groups may form mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring systems;
- one or more second chemical moieties, independently of each other selected from the group consisting of CN and an optionally substituted 1,3,5-triazinyl group.

In a still even more preferred embodiment of the invention, the at least one, preferably each TADF material E^Bincludes

- one or more first chemical moieties, independently of each other selected from an amino group, indolyl, carbazolyl, and derivatives thereof, all of which may be optionally substituted, wherein these groups may be bonded to the core structure of the respective TADF molecule via a nitrogen (N) or via a carbon (C) atom, and wherein substituents bonded to these groups may form mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring systems,
- one or more optionally substituted 1,3,5-triazinyl group.

The person skilled in the art knows that the expression “derivatives thereof” means that the respective parent structure may be optionally substituted or any atom within the respective parent structure may be replaced by an atom of another element for example.
In one embodiment of the invention, each TADF material E^Bincludes

- one or more first chemical moieties, each including or consisting of a structure according to Formula D-I:

- and
- optionally, one or more second chemical moieties, each independently of each other selected from CN, CF₃, and a structure according to any of Formulas A-I, A-II, A-III, and A-IV:

- and
- one third chemical moiety including or consisting of a structure according to any of Formulas L-I, L-II, L-III, L-IV, L-V, L-VI, L-VII, and L-VIII:

- wherein
- the one or more first chemical moieties and the optional one or more second chemical moieties are covalently bonded via a single bond to the third chemical moiety;
- wherein in Formula D-I:
- #represents the binding site of a single bond linking the respective first chemical moiety according to Formula D-I to the third chemical moiety;
- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═CR¹, R², C═O, C═NR¹, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, R^d, R¹, and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, B(OR³)₂, OSO₂, R³, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R³and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R³C═CR³, C≡C, Si(R³)₂, Ge(R³)₂, Sn(R³)₂, C═O, C═S, C═Se, C═NR³, P(═O)(R³), SO, SO₂, NR³, O, S or CONR³;
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R³and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R³C═CR³, C═C, Si(R³)₂, Ge(R³)₂, Sn(R³)₂, C═O, C═S, C═Se, C═NR³, P(═O)(R³), SO, SO₂, NR³, O, S or CONR³;
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R³and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R³C═CR³, C═C, Si(R³)₂, Ge(R³)₂, Sn(R³)₂, C═O, C═S, C═Se, C═NR³, P(═O)(R³), SO, SO₂, NR³, O, S or CONR³;
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R³and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R³C═CR³, C═C, Si(R³)₂, Ge(R³)₂, Sn(R³)₂, C═O, C═S, C═Se, C═NR³, P(═O)(R³), SO, SO₂, NR³, O, S or CONR³;
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R³and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R³C═CR³, Si(R³)₂, Ge(R³)₂, Sn(R³)₂, C═O, C═S, C═Se, C═NR³, P(═O)(R³), SO, SO₂, NR³, O, S or CONR³;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R³; and
- C₃-C₆₀-heteroaryl,
- which is optionally substituted with one or more substituents R³;
- R³is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁴)₂, OR⁴, Si(R⁴)₃, B(OR⁴)₂, OSO₂, R⁴, CF₃, CN, F, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R⁴and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁴C═CR⁴, CC, Si(R⁴)₂, Ge(R⁴)₂, Sn(R⁴)₂, C═O, C═S, C═Se, C═NR⁴, P(═O)(R⁴), SO, SO₂, NR⁴, O, S or CONR⁴;
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R⁴and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁴C═CR⁴, CC, Si(R⁴)₂, Ge(R⁴)₂, Sn(R⁴)₂, C═O, C═S, C═Se, C═NR⁴, P(═O)(R⁴), SO, SO₂, NR⁴, O, S or CONR⁴;
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R⁴and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁴C═CR⁴, CC, Si(R⁴)₂, Ge(R⁴)₂, Sn(R⁴)₂, C═O, C═S, C═Se, C═NR⁴, P(═O)(R⁴), SO, SO₂, NR⁴, O, S or CONR⁴;
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R⁴and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁴C═CR⁴, CC, Si(R⁴)₂, Ge(R⁴)₂, Sn(R⁴)₂, C═O, C═S, C═Se, C═NR⁴, P(═O)(R⁴), SO, SO₂, NR⁴, O, S or CONR⁴;
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R⁴and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁴C═CR⁴, Si(R⁴)₂, Ge(R⁴)₂, Sn(R⁴)₂, C═O, C═S, C═Se, C═NR⁴, P(═O)(R⁴), SO, SO₂, NR⁴, O, S or CONR⁴;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R⁴; and
- C₃-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R⁴;
- wherein, optionally, any substituents R^a, R^b, R^d, R¹, R², R³, and R⁴independently of each other form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with one or more adjacent substituents selected from R^a, R^b, R^d, R¹, R², R³, and R⁴;
- R⁴is at each occurrence selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkenyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkynyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl, Ph or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Ph or C₁-C₅-alkyl;

N(C₆-C₁₈-aryl)₂;

- N(C₃-C₁₇-heteroaryl)₂, and
- N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- wherein in Formulas A-I, A-II, A-III, A-IV:
- the dashed line indicates a single bond linking the respective second chemical moiety according to Formula A-I, A-II, A-III or A-IV to the third chemical moiety;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provisions that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁹)₂, OR⁹, Si(R⁹)₃, B(OR⁹)₂, OSO₂, R⁹, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R⁹and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁹C═CR⁹, C≡C, Si(R⁹)₂, Ge(R⁹)₂, Sn(R⁹)₂, C═O, C═S, C═Se, C═NR⁹, P(═O)(R⁹), SO, SO₂, NR⁹, O, S or CONR⁹;
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R⁹and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁹C═CR⁹, C═C, Si(R⁹)₂, Ge(R⁹)₂, Sn(R⁹)₂, C═O, C═S, C═Se, C═NR⁹, P(═O)(R⁹), SO, SO₂, NR⁹, O, S or CONR⁹;
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R⁹and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁹C═CR⁹, C═C, Si(R⁹)₂, Ge(R⁹)₂, Sn(R⁹)₂, C═O, C═S, C═Se, C═NR⁹, P(═O)(R⁹), SO, SO₂, NR⁹, O, S or CONR⁹;
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R⁹and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁹C═CR⁹, C═C, Si(R⁹)₂, Ge(R⁹)₂, Sn(R⁹)₂, C═O, C═S, C═Se, C═NR⁹, P(═O)(R⁹), SO, SO₂, NR⁹, O, S or CONR⁹;
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R⁹and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁹C═CR⁹, Si(R⁹)₂, Ge(R⁹)₂, Sn(R⁹)₂, C═O, C═S, C═Se, C═NR⁹, P(═O)(R⁹), SO, SO₂, NR⁹, O, S or CONR⁹;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R⁹; and
- C₃-C₆₀-heteroaryl,
- which is optionally substituted with one or more substituents R⁹;
- R⁹is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R¹⁰)₂, OR¹⁰, Si(R¹⁰)₃, B(OR¹⁰)₂, OSO₂, R¹⁰, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R¹⁰and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R¹C═CR¹⁰, C═C, Si(R¹⁰)₂, Ge(R¹⁰)₂, Sn(R¹⁰)₂, C═O, C═S, C═Se, C═NR¹⁰, P(═O)(R¹⁰), SO, SO₂, NR¹⁰, O, S or CONR¹⁰;
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R¹⁰and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R¹C═CR¹⁰, C═C, Si(R¹⁰)₂, Ge(R¹⁰)₂, Sn(R¹⁰)₂, C═O, C═S, C═Se, C═NR¹⁰, P(═O)(R¹⁰), SO, SO₂, NR¹⁰, O, S or CONR¹⁰;
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R¹⁰and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R¹C═CR¹⁰, C═C, Si(R¹⁰)₂, Ge(R¹⁰)₂, Sn(R¹⁰)₂, C═O, C═S, C═Se, C═NR¹⁰, P(═O)(R¹⁰), SO, SO₂, NR¹⁰, O, S or CONR¹⁰;
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R¹⁰and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R¹C═CR¹⁰, C═C, Si(R¹⁰)₂, Ge(R¹⁰)₂, Sn(R¹⁰)₂, C═O, C═S, C═Se, C═NR¹⁰, P(═O)(R¹⁰), SO, SO₂, NR¹⁰, O, S or CONR¹⁰;
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R¹⁰and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R¹C═CR¹⁰, Si(R¹⁰)₂, Ge(R¹⁰)₂, Sn(R¹⁰)₂, C═O, C═S, C═Se, C═NR¹⁰, P(═O)(R¹⁰), SO, SO₂, NR¹⁰, O, S or CONR¹⁰;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R¹⁰; and
- C₃-C₆₀-heteroaryl,
- which is optionally substituted with one or more substituents R¹⁰;
- R¹⁰is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkenyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkynyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl, Ph or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Ph or C₁-C₅-alkyl;
- N(C₆-C₁₈-aryl)₂;
- N(C₃-C₁₇-heteroaryl)₂, and
- N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-I:

- wherein R^Xis defined as R⁶, with the provision that at least one group R^Xin Formula EWG-I is CN or CF₃;
- wherein the two adjacent groups R⁸in Formula A-IV optionally form an aromatic ring, which is fused to the structure of Formula A-IV, wherein the optionally so formed fused ring system includes in total 9 to 18 ring atoms;
- wherein in Formulas L-I, L-II, L-III, L-IV, L-V, L-VI, L-VII, and L-VIII:
- Q³is at each occurrence independently of each other selected from nitrogen (N) and CR¹², with the provision that at least one Q³is nitrogen (N);
- R¹¹is at each occurrence independently of each other either the binding site of a single bond connecting a first or a second chemical moiety to the third chemical moiety or is independently of each other selected from the group consisting of: hydrogen, deuterium, F, Cl, Br, I,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally substituted by deuterium;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl groups, C₆-C₁₈-aryl groups, F, Cl, Br, and I;
- R¹²is defined as R⁶.

In a preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═CR¹, R², C═O, C═NR¹, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, R^d, R¹, and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R³and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R³C═CR³, C═C, Si(R³)₂, Ge(R³)₂, Sn(R³)₂, C═O, C═S, C═Se, C═NR³, P(═O)(R³), SO, SO₂, NR³, O, S or CONR³;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R³; and
- C₃-C₆₀-heteroaryl,
- which is optionally substituted with one or more substituents R³;
- R³is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁴)₂, OR⁴, Si(R⁴)₃, CF₃, CN, F, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R⁴and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁴C═CR⁴, CC, Si(R⁴)₂, Ge(R⁴)₂, Sn(R⁴)₂, C═O, C═S, C═Se, C═NR⁴, P(═O)(R⁴), SO, SO₂, NR⁴, O, S or CONR⁴;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R⁴; and
- C₃-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R⁴;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, R², R³, and R⁴independently of each other form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with one or more adjacent substituents selected from R^a, R^b, R^d, R¹, R², R³, and R⁴;
- R⁴is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl, Ph or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl or Ph;
- N(C₆-C₁₈-aryl)₂;
- N(C₃-C₁₇-heteroaryl)₂, and
- N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁹)₂, OR⁹, Si(R⁹)₃, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R⁹and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁹C═CR⁹, C═C, Si(R⁹)₂, Ge(R⁹)₂, Sn(R⁹)₂, C═O, C═S, C═Se, C═NR⁹, P(═O)(R⁹), SO, SO₂, NR⁹, O, S or CONR⁹;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R⁹; and
- C₃-C₆₀-heteroaryl,
- which is optionally substituted with one or more substituents R⁹;
- R⁹is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R¹⁰)₂, OR¹⁰, Si(R¹⁰)₃, CF₃, CN, F, C₁, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R¹⁰and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R¹C═CR¹⁰, C═C, Si(R¹⁰)₂, Ge(R¹⁰)₂, Sn(R¹⁰)₂, C═O, C═S, C═Se, C═NR¹⁰, P(═O)(R¹⁰), SO, SO₂, NR¹⁰, O, S or CONR¹⁰;
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R¹⁰; and
- C₃-C₆₀-heteroaryl,
- which is optionally substituted with one or more substituents R¹⁰;
- R¹⁰is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl, Ph or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl or Ph;
- N(C₆-C₁₈-aryl)₂;
- N(C₃-C₁₇-heteroaryl)₂, and
- N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-I:

- wherein R^Xis defined as R⁶, with the provision, that at least one group R^Xis CN or CF₃;
- wherein the two adjacent groups R⁸in Formula A-IV optionally form an aromatic ring, which is fused to the structure of Formula A-IV and optionally substituted with one or more substituents R¹⁰; wherein the optionally so formed fused ring system includes in total 9 to 18 ring atoms;
- Q³is at each occurrence independently of each other selected from nitrogen (N) and CR¹², with the provision that at least one Q³is nitrogen (N);
- R¹¹is at each occurrence independently of each other either the binding site of a single bond connecting a first or a second chemical moiety to the third chemical moiety or is independently of each other selected from the group consisting of: hydrogen, deuterium,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally substituted by deuterium;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, C₁-C₅-alkyl groups, and C₆-C₁₈-aryl groups;
- R¹²is defined as R⁶;
- wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is only limited by the number of available binding sites on the third chemical moiety (in other words: the number of substituents R¹¹), with the aforementioned provision, that each TADF material E^Bincludes at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety.

In an even more preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═CR¹, R², C═O, C═NR¹, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, R^d, R¹, and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, CF₃, CN, F, Cl, Br, I,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R³
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R³; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R³;
- R³is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁴)₂, Si(R⁴)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R⁴and
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R⁴; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R⁴;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, R²and R³independently of each other form a mono- or polycyclic, aliphatic or aromatic, carbo- or heterocyclic ring system with one or more adjacent substituents selected from R^a, R^b, R^d, R¹, R², and R³; wherein the optionally so formed ring system may optionally be substituted with one or more substituents R⁵;
- R⁴and R⁵are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F, Me, ⁱPr, ^tBu, N(Ph)₂, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁹)₂, OR⁹, Si(R⁹)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R⁹;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R⁹; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R⁹;
- R⁹is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R¹⁰)₂, OR¹⁰, Si(R¹⁰)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R¹⁰
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R¹⁰; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R¹⁰;
- R¹⁰is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, CF₃, CN, F, N(Ph)₂, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, CN, CF₃, or F;
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-I:

- wherein R^Xis defined as R⁶, with the provision, that at least one group R^Xis CN or CF₃;
- wherein the two adjacent groups R⁸in Formula A-IV optionally form an aromatic ring, which is fused to the structure of Formula A-IV, wherein the optionally so formed fused ring system includes in total 9 to 18 ring atoms;
- Q³is at each occurrence independently of each other selected from nitrogen (N) and CR¹², with the provision that at least one Q³is nitrogen (N);
- R¹¹is at each occurrence independently of each other either the binding site of a single bond connecting a first or a second chemical moiety to the third chemical moiety or is independently of each other selected from the group consisting of: hydrogen, deuterium,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally substituted by deuterium;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹²is defined as R⁶.

In a still even more preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═O, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, R^d, R¹, and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, CF₃, CN,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R³
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R³; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R³;
- R³is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F, Me, ⁱPr, ^tBu, N(Ph)₂,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, and R²independently of each other form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with one or more adjacent substituents selected from R^a, R^b, R^d, R¹, and R², wherein an optionally so formed fused ring system constructed from the structure according to Formula D-1 and the attached rings formed by adjacent substituents includes in total 13 to 40 ring atoms, preferably 13 to 30 ring atoms, more preferably 16 to 30 ring atoms;
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁹)₂, OR⁹, Si(R⁹)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R⁹;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R⁹; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R⁹;
- R⁹is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, CF₃, CN, F, N(Ph)₂, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, CN, CF₃, or F.
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-I:

- wherein R^Xis defined as R⁶, with the provision, that at least one group R^Xis CN or CF₃;
- wherein the two adjacent groups R⁸in Formula A-IV optionally form an aromatic ring, which is fused to the structure of Formula A-IV, wherein the optionally so formed fused ring system includes in total 9 to 18 ring atoms;
- Q³is at each occurrence independently of each other selected from nitrogen (N) and CR¹², with the provision that at least one Q³is nitrogen (N);
- R¹¹is at each occurrence independently of each other either the binding site of a single bond connecting a first or a second chemical moiety to the third chemical moiety or is independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, and
- Ph, which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹²is defined as R⁶.

In a still even more preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═O, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, and R^dare at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, CF₃, CN, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- carbazolyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- triazinyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- pyrimidinyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- pyridinyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, CF₃, CN,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R³
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R³; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R³;
- R³is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F, Me, ⁱPr, ^tBu, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, and R²independently of each other form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with one or more adjacent substituents selected from R^a, R^b, R^d, R¹, and R², wherein an optionally so formed fused ring system constructed from the structure according to Formula D1 and the attached rings formed by adjacent substituents includes in total 13 to 40 ring atoms, preferably 13 to 30 ring atoms, more preferably 16 to 30 ring atoms;
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R⁹)₂, OR⁹, Si(R⁹)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R⁹;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R⁹; and
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R⁹;
- R⁹is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, CF₃, CN, F, N(Ph)₂, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, CN, CF₃, or F;
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-I:

In a still even more preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═O, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, and R^dare at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R³)₂, OR³, Si(R³)₃, CF₃, CN, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph; and
- carbazolyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, OR³, Si(R³)₃,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R³
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R³; and
- R³is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F, Me, ⁱPr, ^tBu, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, and R²independently of each other form a mono- or polycyclic, aliphatic or aromatic, carbo- or heterocyclic ring system with one or more substituents selected from R^a, R^b, R^d, R¹, and R², wherein an optionally so formed fused ring system constructed from the structure according to Formula D1 and the attached rings formed by adjacent substituents includes in total 13 to 40 ring atoms, preferably 13 to 30 ring atoms, more preferably 16 to 30 ring atoms;
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, OPh, N(Ph)₂, Si(Me)₃, Si(Ph)₃, CF₃, CN, F, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- carbazolyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-l:

In a still even more preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═O, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, and R^dare at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, Si(Me)₃, Si(Ph)₃, CF₃, CN, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph; and
- carbazolyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, and R²independently of each other form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with one or more substituents selected from R^a, R^b, R^d, R¹, and R²; wherein an optionally so formed fused ring system constructed from the structure according to Formula D1 and the attached rings formed by adjacent substituents includes in total 13 to 40 ring atoms, preferably 13 to ring atoms, more preferably 16 to 30 ring atoms;
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, Si(Me)₃, Si(Ph)₃, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- carbazolyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-l:

- wherein R^Xis defined as R⁶, but may also be CN or CF₃, with the provision, that at least one group R^Xis CN or CF₃;
- wherein the two adjacent groups R⁸in Formula A-IV optionally form an aromatic ring, which is fused to the structure of Formula A-IV, wherein the optionally so formed fused ring system includes in total 9 to 18 ring atoms;
- Q³is at each occurrence independently of each other selected from nitrogen (N) and CR¹², with the provision that at least one Q³is nitrogen (N);
- R¹¹is at each occurrence independently of each other either the binding site of a single bond connecting a first or a second chemical moiety to the third chemical moiety or is independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, and
- Ph, which is optionally substituted with one or more substituents independently of each other selected from the group consisting of: deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹²is defined as R⁶.

In a particularly preferred embodiment of the invention,

- Z²is at each occurrence independently of each other selected from the group consisting of a direct bond, CR¹, R², C═O, NR¹, O, SiR¹, R², S, S(O) and S(O)₂;
- R^a, R^b, and R^dare at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, Me, ⁱPr, ^tBu, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R¹and R²are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, and
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- wherein, optionally, any of the substituents R^a, R^b, R^d, R¹, and R²independently of each other form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with one or more substituents selected from R^a, R^b, R^d, R¹, and R², wherein an optionally so formed fused ring system constructed from the structure according to Formula D1 and the attached rings formed by adjacent substituents includes in total 13 to 40 ring atoms, preferably 13 to ring atoms, more preferably 16 to 30 ring atoms;
- a is an integer and is 0 or 1;
- b is an integer and is at each occurrence 0 or 1, wherein both b are always identical;
- wherein both integers b are 0 when integer a is 1 and integer a is 0 when both integers b are 1;
- Q¹is at each occurrence independently of each other selected from nitrogen (N), CR⁶, and CR⁷, with the provision that in Formula A-I, two adjacent groups Q¹cannot both be nitrogen (N); wherein, if none of the groups Q¹in Formula A-I is nitrogen (N), at least one of the groups Q¹is CR⁷;
- Q²is at each occurrence independently of each other selected from nitrogen (N), and CR⁶, with the provision that in Formulas A-II and A-III, at least one group Q²is nitrogen (N) and that two adjacent groups Q²cannot both be nitrogen (N);
- R⁶and R⁸are at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, Me, ⁱPr, ^tBu,
- Ph, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph; and
- carbazolyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, Me, ⁱPr, ^tBu, and Ph;
- R⁷is at each occurrence independently of each other selected from the group consisting of CN, CF₃and a structure according to Formula EWG-I:

In a preferred embodiment of the invention, a is always 1 and b is always 0.
In a preferred embodiment of the invention, Z²is at each occurrence a direct bond.
In a preferred embodiment of the invention, R^ais at each occurrence hydrogen.
In a preferred embodiment of the invention, R^aand R^dare at each occurrence hydrogen.
In a preferred embodiment of the invention, Q³is at each occurrence nitrogen (N).
In one embodiment of the invention, at least one group R^Xin Formula EWG-I is CN.
In a preferred embodiment of the invention, exactly one group R^Xin Formula EWG-I is CN.
In a preferred embodiment of the invention, exactly one group R^Xin Formula EWG-I is CN and no group R^Xin Formula EWG-I is CF₃.
Examples of first chemical moieties according to the present invention are shown below, which does of course not imply that the present invention is limited to these examples:

- wherein the aforementioned definitions apply.

Examples of second chemical moieties according to the present invention are shown below, which does of course not imply that the present invention is limited to these examples:

- wherein the aforementioned definitions apply.

In a preferred embodiment of the invention, each TADF material E^Bhas a structure represented by any of Formulas E^B-I, E^B-II, E^B-III, E^B-IV, E^B-V, E^B-VI, E^B-VII, E^B-VIII, and E^B-IX, E^B-X, and E^B-XI:

- wherein
- R¹³is defined as R¹¹with the provision that R¹³cannot be a binding site of a single bond connecting a first or a second chemical moiety to the third chemical moiety;
- R^Yis selected from CN and CF₃or RY includes or consists of a structure according to Formula BN-I:

- which is bonded to the structure of Formula E^B-I, E^B-II, E^B-III, E^B-IV, E^B-V, E^B-VI, E^B-VII, E^B-VIII or E^B-IX via a single bond indicated by the dashed line and wherein exactly one R^BNgroup is CN while the other two R^BNgroups are both hydrogen (H);
- and wherein apart from that the above-mentioned definitions apply.

In a preferred embodiment of the invention, R¹³is at each occurrence hydrogen.
In one embodiment of the invention, R^Yis at each occurrence CN.
In one embodiment of the invention, R^Yis at each occurrence CF₃.
In one embodiment of the invention, RY is at each occurrence a structure represented by Formula BN-I.
In a preferred embodiment of the invention, RY is at each occurrence independently of each other selected from CN and a structure represented by Formula BN-I.
In a preferred embodiment of the invention, each TADF material E^Bhas a structure represented by any of Formulas E^B-I, E^B-II, E^B-III, E^B-IV, E^B-V, E^B-VI, E^B-VII, and E^B-X, wherein the aforementioned definitions apply.
In a preferred embodiment of the invention, each TADF material E^Bhas a structure represented by any of Formulas E^B-I, E^B-II, E^B-III, E^B-V, and E^B-X, wherein the aforementioned definitions apply.
Examples of TADF materials E^Bfor use in organic electroluminescent devices according to the invention are listed in the following, whereat this does not imply that only the shown examples are suitable TADF materials E^Bin the context of the present invention.
Non-limiting examples of TADF materials E^Baccording Formula E^B-I are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-II are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-III are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-IV are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-V, are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-VI are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-VII are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-VIII are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-IX are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-X are shown below:
Non-limiting examples of TADF materials E^Baccording Formula E^B-XI are shown below:
The synthesis of TADF materials E^Bcan be accomplished via standard reactions and reaction conditions known to the skilled artisan. Typically, in a first step, a coupling reaction, preferably a palladium-catalyzed coupling reaction, may be performed, which is exemplarily shown below for the synthesis of TADF materials E^Baccording to any of Formulas E^B-III, E^B-IV, and E^B-V:
E1 can be any boronic acid (R^B═H) or an equivalent boronic acid ester (R^B=alkyl or aryl), in particular two R^Bmay form a ring to give e.g., boronic acid pinacol esters. As second reactant E2 is used, wherein Hal refers to halogen and may be I, Br or Cl, but preferably is Br. Reaction conditions of such palladium-catalyzed coupling reactions are known the person skilled in the art, e.g., from WO 2017/005699, and it is known that the reacting groups of E1 and E2 can be interchanged as shown below to optimize the reaction yields:
In a second step, the TADF molecules are obtained via the reaction of a nitrogen heterocycle in a nucleophilic aromatic substitution with the aryl halide, preferably aryl fluoride E3. Typical conditions include the use of a base, such as tribasic potassium phosphate or sodium hydride, for example, in an aprotic polar solvent, such as dimethyl sulfoxide (DMSO) or N,N-dimethylformamide (DMF), for example.
In particular, the donor molecule E4 may be a 3,6-substituted carbazole (e.g., 3,6-dimethylcarbazole, 3,6-diphenylcarbazole, 3,6-di-tert-butylcarbazole), a 2,7-substituted carbazole (e.g., 2,7-dimethylcarbazole, 2,7-diphenylcarbazole, 2,7-di-tert-butylcarbazole), a 1,8-substituted carbazole (e.g., 1,8-dimethylcarbazole, 1,8-diphenylcarbazole, 1,8-di-tert-butylcarbazole), a 1-substituted carbazole (e.g., 1-methylcarbazole, 1-phenylcarbazole, 1-tert-butylcarbazole), a 2-substituted carbazole (e.g., 2-methylcarbazole, 2-phenylcarbazole, 2-tert-butylcarbazole), or a 3-substituted carbazole (e.g., 3-methylcarbazole, 3-phenylcarbazole, 3-tert-butylcarbazole).
Alternatively, a halogen-substituted carbazole, particularly 3-bromocarbazole, can be used as E4.
In a subsequent reaction, a boronic acid ester functional group or boronic acid functional group may be exemplarily introduced at the position of the one or more halogen substituents, which was introduced via E4, to yield for example the corresponding carbazolyl-boronic acid or ester such as a carbazol-3-yl-boronic acid ester or carbazol-3-yl-boronic acid, e.g., via the reaction with bis(pinacolato)diboron (CAS No. 73183-34-3). Subsequently, one or more substituents R^a, R^bor R^dmay be introduced in place of the boronic acid ester group or the boronic acid group via a coupling reaction with the corresponding halogenated reactant, e.g., R^a—Hal, preferably R^a—CI and R^a-Br.
Alternatively, one or more substituents R^a, R^bor R^dmay be introduced at the position of the one or more halogen substituents, which was introduced via D-H, via the reaction with a boronic acid of the substituent R^a[R^a—B(OH)₂], R^b[R^b—B(OH)₂] or R^d[R^d—B(OH)₂] or a corresponding boronic acid ester.
Further TADF materials E^Bmay be obtained analogously. A TADF material E^Bmay also be obtained by any alternative synthesis route suitable for this purpose.
An alternative synthesis route may include the introduction of a nitrogen heterocycle via copper- or palladium-catalyzed coupling to an aryl halide or aryl pseudohalide, preferably an aryl bromide, an aryl iodide, aryl triflate or an aryl tosylate.
Phosphorescence Material(s) P^B
The phosphorescence materials P^Bin the context of the present invention utilize the intramolecular spin-orbit interaction (heavy atom effect) caused by metal atoms to obtain light emission from triplets (i.e., excited triplet states, typically the lowermost excited triplet state T1). This is to say that a phosphorescence material P^Bis capable of emitting phosphorescence at room temperature (i.e., (approximately 20° C.), which is typically measured from a spin-coated film of the respective P^Bin poly(methyl methacrylate) (PMMA) with a concentration of 10% by weight of P^B.
It is to be noted that, although being per definition capable of emitting phosphorescence, a phosphorescence material P^Boptionally included in the organic electroluminescent device of the invention as excitation energy transfer component EET-1 or EET-2 preferably mainly functions as “energy pump” and not as emitter material. This is to say that a phosphorescence material P^Bincluded in a light-emitting layer B preferably mainly transfers excitation energy to one or more small FWHM emitters S^Bthat in turn serve as the main emitter material(s). The main function of a phosphorescence material P^Bin a light-emitting layer B is preferably not the emission of light. However, it may emit light to some extent.
Generally, it is understood, that all phosphorescent complexes that are used in organic electroluminescent devices in the state of the art may also be used in an organic electroluminescent device according to the present invention.
It is common knowledge to those skilled in the art that phosphorescence materials P^Bused in organic electroluminescent devices are oftentimes complexes of Ir, Pt, Au, Os, Eu, Ru, Re, Ag and Cu, in the context of this invention preferably of Ir, Pt, and Pd, more preferably of Ir and Pt. The skilled artisan knows which materials are suitable as phosphorescence materials in organic electroluminescent devices and how to synthesize them. Furthermore, the skilled artisan is familiar with the design principles of phosphorescent complexes for use in organic electroluminescent devices and knows how to tune the emission of the complexes by means of structural variations.
See for example: C.-L. Ho, H. Li, W.-Y. Wong, Journal of Organometallic Chemistry 2014, 751, 261, DOI: 10.1016/j.jorganchem.2013.09.035; T. Fleetham, G. Li, J. Li, Advanced Science News 2017, 29, 1601861, DOI: 10.1002/adma.201601861; A.R.B.M. Yusoff, A.J. Huckaba, M.K. Nazeeruddin, Topics in Current Chemistry (Z) 2017, 375:39, 1, DOI: 10.1007/s41061-017-0126-7; T.-Y. Li, J. Wuc, Z.-G. Wua, Y.-X. Zheng, J.-L. Zuo, Y. Pan, Coordination Chemistry Reviews 2018, 374, 55, DOI: 10.1016/j.ccr.2018.06.014.
For example, US2020274081 (A1), US20010019782 (A1), US20020034656 (A1), US20030138657 (A1), US2005123791 (A1), US20060065890 (A1), US20060134462 (A1), US20070034863 (A1), US20070111026 (A1), US2007034863 (A1), US2007138437 (A1), US20080020237 (A1), US20080297033 (A1), US2008210930 (A1), US20090115322 (A1), US2009104472 (A1), US20100244004 (A1), US2010105902 (A1), US20110057559 (A1), US2011215710 (A1), US2012292601 (A1), US2013165653 (A1), US20140246656 (A1), US20030068526 (A1), US20050123788 (A1), US2005260449 (A1), US20060127696 (A1), US20060202194 (A1), US20070087321 (A1), US20070190359 (A1), US2007104979 (A1), US2007224450 (A1), US20080233410 (A1), US200805851 (A1), US20090039776 (A1), US20090179555 (A1), US20100090591 (A1), US20100295032 (A1), US20030072964 (A1), US20050244673 (A1), US20060008670 (A1), US20060134459 (A1), US20060251923 (A1), US20070103060 (A1), US20070231600 (A1), US2007104980 (A1), US2007278936 (A1), US20080261076 (A1), US2008161567 (A1), US20090108737 (A1), US2009085476 (A1), US20100148663 (A1), US2010102716 (A1), US2010270916 (A1), US20110204333 (A1), US2011285275 (A1), US2013033172 (A1), US2013334521 (A1), US2014103305 (A1), US2003068536 (A1), US2003085646 (A1), US2006228581 (A1), US2006197077 (A1), US2011114922 (A1), US2011114922 (A1), US2003054198 (A1), and EP2730583 (A1) disclose phosphorescence materials that may be used as phosphorescence materials P^Bin the context of the present invention. It is understood that this does not imply that the present invention is limited to organic electroluminescent devices including a phosphorescence materials described in one of the named references.
As laid out in US2020274081 (A1), examples of phosphorescent complexes for use in organic electroluminescent devices such as those of the present invention include the complexes shown below. Again, it is understood that the present invention is not limited to these examples.
As stated above, the skilled artisan will realize that any phosphorescent complexes used in the state of the art may be suitable as phosphorescence materials P^Bin the context of the present invention.
In one embodiment of the invention, each phosphorescence material P^Bincluded in a light-emitting layer B includes Iridium (Ir).
In one embodiment of the invention, at least one phosphorescence material P^B, preferably each phosphorescence material P^Bincluded in a light-emitting layer B, is an organometallic complex including either iridium (Ir) or platinum (Pt).
In one embodiment of the invention, the at least one phosphorescence material P^B, preferably each phosphorescence material P^B, included in a light-emitting layer B is an organometallic complex including iridium (Ir).
In one embodiment of the invention, the at least one phosphorescence material P^B, preferably each phosphorescence material P^B, included in a light-emitting layer B is an organometallic complex including platinum (Pt).
Non-limiting examples of phosphorescence materials P^Balso include compounds represented by the following general Formula P^B-I,
In Formula P^B-I, M is selected from the group consisting of Ir, Pt, Au, Eu, Ru, Re, Ag and Cu;

- n is an integer of 1 to 3; and
- X²and Y¹together form at each occurrence independently from each other a bidentate monoanionic ligand.

In one embodiment of the invention, each phosphorescence materials P^Bincluded in a light-emitting layer B includes or consists of a structure according to Formula P^B-I,

- wherein, M is selected from the group consisting of Ir, Pt, Au, Eu, Ru, Re, Ag and Cu;
- n is an integer of 1 to 3; and
- X²and Y¹together form at each occurrence independently from each other a bidentate monoanionic ligand.

Examples of the compounds represented by the Formula P^B-I include compounds represented by the following general Formula P^B-II or general Formula P^B-III:
In Formulas P^B-II and P^B-III, X′ is an aromatic ring which is carbon(C)-bonded to M and Y′ is a ring, which is nitrogen(N)-coordinated to M to form a ring.
X′ and Y′ are bonded, and X′ and Y′ may form a new ring. In Formula P^B-III Z³is a bidentate ligand having two oxygens(O). In the Formulas P^B-II and P^B-III, M is preferably Ir from the viewpoint of high efficiency and long lifetime.
In the Formulas P^B-II and P^B-III, the aromatic ring X′ is for example a C₆-C₃₀-aryl, preferably a C₆-C₁₆-aryl, even more preferably a C₆-C₁₂-aryl, and particularly preferably a C₆-C₁₀-aryl, wherein X′ at each occurrence is optionally substituted with one or more substituents R^E.
In the Formulas P^B-II and P^B-III, Y′ is for example a C₂-C₃₀-heteroaryl, preferably a C₂-C₂₅-heteroaryl, more preferably a C₂-C₂₀-heteroaryl, even more preferably a C₂-C₁₅-heteroaryl, and particularly preferably a C₂-C₁₀-heteroaryl, wherein Y′ at each occurrence is optionally substituted with one or more substituents R^E. Furthermore, Y′ may be, for example, a C₁-C₅-heteroaryl, which is optionally substituted with one or more substituents R^E.
In the Formulas P^B-II and P^B-III, the bidentate ligand having two oxygens(O) Z³is for example a C₂-C₃₀-bidentate ligand having two oxygens, a C₂-C₂₅-bidentate ligand having two oxygens, more preferably a C₂-C₂₀-bidentate ligand having two oxygens, even more preferably a C₂-C₁₅-bidentate ligand having two oxygens, and particularly preferably a C₂-C₁₀-bidentate ligand having two oxygens, wherein Z³at each occurrence is optionally substituted with one or more substituents R^E. Furthermore, Z³may be, for example, a C₂-C₅- bidentate ligand having two oxygens, which is optionally substituted with one or more substituents R^E.

- R^Eis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R^5E)₂, OR^5E
- SR^5E, Si(R^5E)₃, CF₃, CN, halogen,
- C₁-C₄₀-alkyl, which is optionally substituted with one or more substituents R^5Eand wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁵EC═CR^5E, CC, Si(R⁵E)₂, Ge(R⁵E)₂, Sn(R⁵E)₂, C═O, C═S, C═Se, C═NR^5EP(═O)(R^5E), SO, SO₂, NR^5E, O, S or CONR^SE;
- C₁-C₄₀-thioalkoxy, which is optionally substituted with one or more substituents R^5Eand wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁵EC═CR^5E, O, Si(R⁵E)₂, Ge(R^5E)₂, Sn(R^5E)₂, C═O, C═S, C═Se, C═NR^5E, P(═O)(R^5E), SO, SO₂, NR^5E, O, S or CONR^5E;
- C₆-C₆₀-aryl, which is optionally substituted with one or more substituents R⁵E and
- C₃-C₅₇-heteroaryl, which is optionally substituted with one or more substituents R^5E
- R^5Eis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R^6E)₂, OR^6E, SR^6E, Si(R^6E)₃, CF₃, CN, F,
- C₁-C₄₀-alkyl, which is optionally substituted with one or more substituents R^6Eand wherein one or more non-adjacent CH₂-groups are optionally substituted by R⁶EC═CR^6E, C═C, Si(R⁶E)₂, Ge(R⁶E)₂, Sn(R⁶E)₂, C═O, C═S, C═Se, C═NR⁶E P(═O)(R^6E), S, SO₂, NR^6E, O, S or CONR^6E;
- C₆-C₆₀-aryl, which is optionally substituted with one or more substituents R^6E. and
- C₃-C₅₇-heteroaryl, which is optionally substituted with one or more substituents R^6E
- R^6Eis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl, wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl, which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- N(C₆-C₁₈-aryl)₂;
- N(C₃-C₁₇-heteroaryl)₂, and
- N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl).

The substituents R^E, R^5E, or R^6Eindependently from each other optionally may form a mono- or polycyclic, aliphatic, aromatic, heteroaromatic ring system with one or more substituents R^E, R^5E, R^6E, and/or with X′, Y′ and Z³.
Non-limiting examples of the compound represented by Formula P^B-II include Ir(ppy)₃, Ir(ppy)₂(acac), Ir(mppy)₃, Ir(PPy)₂(m-bppy), and Btplr(acac), Ir(btp)₂(acac), Ir(2-phq)₃, Hex-Ir(phq)₃, Ir(fbi)₂(acac), fac-Tris(2-(3-p-xylyl)phenyl)pyridine iridium(III), Eu(dbm)₃(Phen), Ir(piq)₃, Ir(piq)₂(acac), Ir(Fiq)₂(acac), Ir(Flq)₂(acac), Ru(dtb-bpy)₃·2(PF6), Ir(2-phq)₃, Ir(BT)₂(acac), Ir(DMP)₃, Ir(Mpq)₃, Ir(phq)₂tpy, fac-Ir(ppy)₂Pc, Ir(dp)PQ₂, Ir(Dpm)(Piq)₂, Hex-Ir(piq)₂(acac), Hex-Ir(piq)₃, Ir(dmpq)₃, Ir(dmpq)₂(acac), FPQIrpic and the like.
Other non-limiting examples of the compound represented by Formula P^B-II include compounds represented by the following Formulas P^B-III to P^B-II-11. In the structural Formula, “Me” represents a methyl group.
Other non-limiting examples of the compound represented by the Formula P^B-III include compounds represented by the following Formulas P^B-III-1 to P^B-III-6-In the structural Formula, “Me” represents a methyl group.
Furthermore, the iridium complexes described in US2003017361 (A1), US2004262576 (A1), WO2010027583 (A1), US2019245153 (A1), US2013119354 (A1), US2019233451 (A1), may be used. From the viewpoint of high efficiency in phosphorescence materials, Ir(ppy)₃and Hex-Ir(ppy)₃are often used for green light emission.
Exciplexes
It has been stated that TADF materials are capable of converting excited triplet states (preferably T1) to excited singlet states (preferably S1) by means of reverse intersystem crossing (RISC). It has also been stated that this typically requires a small ΔE_STvalue, which is smaller than 0.4 eV for TADF materials E^Bby definition.
As also stated, this is oftentimes achieved by designing TADF molecules E^Bso that the HOMO and LUMO are spatially largely separated on (electron-) donor and (electron-) acceptor groups, respectively. However, another strategy to arrive at species that have small ΔE_STvalues is the formation of exciplexes. As known to the skilled artisan an exciplex is an excited state charge transfer complex formed between a donor molecule and an acceptor molecule (i.e., an excited state donor-acceptor complexes). The person skilled in the art further understands that the spatial separation between the HOMO (on the donor molecule) and the LUMO (on the acceptor molecule) in exciplexes typically results in them having rather small ΔE_STvalues and being oftentimes capable of converting excited triplet states (preferably T1) to excited singlet states (preferably S1) by means of reverse intersystem crossing (RISC).
Indeed, as known to the person skilled in the art, a TADF material may not just be a material that is on its own capable of RISC from an excited triplet state to an excited singlet state with subsequent emission of TADF as laid out above. It is known to those skilled in the art that a TADF material may in fact also be an exciplex that is formed from two kinds of materials, preferably from two host materials H^B, more preferably from a p-host material H^Pand an n-host material H^N(vide infra), whereat it is understood that the host materials H^B(typically H^Pand H^N) may themselves be TADF materials.
The person skilled in the art understands that any materials that are included in the same layer, in particular in the same EML, but also materials that are in adjacent layers and get in close proximity at the interface between these adjacent layers, may together form an exciplex. The person skilled in the art knows how to choose pairs of materials, in particular pairs of a p-host H^Pand an n-host H^N, which form an exciplex and the selection criteria for the two components of said pair of materials, including HOMO- and/or LUMO-energy level requirements. This is to say that, in case exciplex formation may be aspired, the highest occupied molecular orbital (HOMO) of the one component, e.g., the p-host material H^P, may be at least 0.20 eV higher in energy than the HOMO of the other component, e.g., the n-host material H^N, and the lowest unoccupied molecular orbital (LUMO) of the one component, e.g., the p-host material H^P, may be at least 0.20 eV higher in energy than the LUMO of the other component, e.g., the n-host material H^N.
It belongs to the common knowledge of those skilled in the art that, if present in an EML of an organic electroluminescent device, in particular an OLED, an exciplex may have the function of an emitter material and emit light when a voltage and electrical current are applied to said device. As also commonly known from the state of the art, an exciplex may also be non-emissive and may for example transfer excitation energy to an emitter material, if included in an EML of an organic electroluminescent device. Thus, exciplexes that are capable of converting excited triplet states to excited singlet states by means of RISC may also be used as excitation energy transfer component EET-1 and/or EET-2.
Non-limiting examples of host materials H^Bthat may together form an exciplex are listed below, wherein the donor molecule (i.e., the p-host H^P) may be selected from the following structures:

- and wherein the acceptor molecule (i.e., the n-host H^N) may be selected from the following structures:

It is understood that exciplexes may be formed from any materials included in a light-emitting layer B in the context of the present invention, for example from different excitation energy transfer components (EET-1 and/or EET-2) as well as from an excitation energy transfer component (EET-1 and/or EET-2) and a small FWHM emitter S^Bor from a host material H^Band an excitation energy transfer component EET-1 or EET-2 or a small FWHM emitter S^B. Preferably however, they are formed from different host materials H^Bas stated above. It is also understood that an exciplex may also be formed and not serve as excitation energy transfer component (EET-1 and/or EET-2) itself.
Small FWHM Emitter(s) S^B
A small full width at half maximum (FWHM) emitter S^Bin the context of the present invention is any emitter that has an emission spectrum, which exhibits an FWHM of less than or equal to 0.25 eV (s 0.25 eV), typically measured from a spin-coated film with 1 to 5% by weight, in particular with 2% by weight of emitter in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). Alternatively, emission spectra of small FWHM emitters S^Bmay be measured in a solution, typically with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In a preferred embodiment of the invention, a small FWHM emitter S^Bis any emitter that has an emission spectrum, which exhibits an FWHM of s 0.24 eV, more preferably of s 0.23 eV, even more preferably of s 0.22 eV, of <0.21 eV or of s 0.20 eV, measured from a spin-coated film with 1 to 5% by weight, in particular with 2% by weight of emitter S^Bin PMMA at room temperature (i.e., (approximately) 20° C.). Alternatively, emission spectra of small FWHM emitters S^Bmay be measured in a solution, typically with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.). In other embodiments of the present invention, each small FWHM emitter S^Bexhibits an FWHM of s 0.19 eV, of <0.18 eV, of <0.17 eV, of <0.16 eV, of <0.15 eV, of s 0.14 eV, of <0.13 eV, of s 0.12 eV, or of s 0.11 eV.
In one embodiment of the invention, each small FWHM emitter S^Bemits light with an emission maximum in the wavelength range of from 400 nm to 470 nm, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In one embodiment of the invention, each small FWHM emitter S^Bemits light with an emission maximum in the wavelength range of from 500 nm to 560 nm, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In one embodiment of the invention, each small FWHM emitter S^Bemits light with an emission maximum in the wavelength range of from 610 nm to 665 nm, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In one embodiment of the invention, each small FWHM emitter S^Bemits light with an emission maximum in the wavelength range of from 400 nm to 470 nm, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In one embodiment of the invention, each small FWHM emitter S^Bemits light with an emission maximum in the wavelength range of from 500 nm to 560 nm, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In one embodiment of the invention, each small FWHM emitter S^Bemits light with an emission maximum in the wavelength range of from 610 nm to 665 nm, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
It is understood that a TADF material E^Bincluded in a light-emitting layer B of an organic electroluminescent device according to the invention may optionally also be an emitter with an emission spectrum which exhibits an FWHM of less than or equal to 0.25 eV (s 0.25 eV). Optionally, a TADF material E^Bincluded in a light-emitting layer B of an organic electroluminescent device according to the invention may also exhibit an emission maximum within the wavelength ranges specified above (namely: 400 nm to 470 nm, 500 nm to 560 nm, 610 nm to 665 nm).
In one embodiment of the invention, one of the relations expressed by the following Formulas (23) to (25) applies:
440 nm<λ_max(S ^B)<470 nm (29)
510 nm<λ_max(S ^B)<550 nm (30)
610 nm<λ_max(S ^B)<665 nm (31),

- wherein λ_max(S^B) refers to the emission maximum of a small FWHM emitter S^Bin the context of the present invention.

In one embodiment, the aforementioned relations expressed by Formulas (29) to (31) apply to materials included in any of the one or more light-emitting layers B of the organic electroluminescent device according to the invention. In one embodiment, the aforementioned relations expressed by Formulas (23) to (25) apply to materials included in the same light-emitting layer B of the organic electroluminescent device according to the invention.
In a preferred embodiment of the invention, each small FWHM emitter S^Bis an organic emitter, which, in the context of the invention, means that it does not contain any transition metals. Preferably, each small FWHM emitter S^Baccording to the invention predominantly consists of the elements hydrogen (H), carbon (C), nitrogen (N), and boron (B), but may for example also include oxygen (O), silicon (Si), fluorine (F), and bromine (Br).
In a preferred embodiment of the invention, each small FWHM emitter S^Bis a fluorescent emitter, which in the context of the present invention means that, upon electronic excitation (for example in an optoelectronic device according to the invention), the emitter is capable of emitting light at room temperature, wherein the emissive excited state is a singlet state.
In one embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 50%, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In a preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 60%, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In an even more preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 70%, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In a still even more preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 80%, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In a particularly preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 90%, measured (with 1 to 5% by weight, in particular with 2% by weight of the emitter S^B) in PMMA at room temperature.
In one embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 50%, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In a preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 60%, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In an even more preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 70%, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In a still even more preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 80%, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
In a particularly preferred embodiment of the invention, a small FWHM emitter S^Bexhibits a photoluminescence quantum yield (PLQY) equal to or higher than 90%, measured with 0.001-0.2 mg/mL of the emitter S^Bin dichloromethane or toluene at room temperature (i.e., (approximately) 20° C.).
The person skilled in the art knows how to design small FWHM emitters S^Bwhich fulfill the above-mentioned requirements or preferred features.
A class of molecules suitable to provide small FWHM emitters S^Bin the context of the present invention are the well-known 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based materials, whose structural features and application in organic electroluminescent devices have been reviewed in detail and are common knowledge to those skilled in the art. The state of the art also reveals how such materials may be synthesized and how to arrive at an emitter with a certain emission color.
See for example: J. Liao, Y. Wang, Y. Xu, H. Zhao, X. Xiao, X. Yang, Tetrahedron 2015, 71(31), 5078, DOI: 10.1016/j.tet.2015.05.054; B.M Squeo, M. Pasini, Supramolecular Chemistry 2020, 32(1), 56-70, DOI: 10.1080/10610278.2019.1691727; M. Poddar, R. Misra, Coordination Chemistry Reviews 2020, 421, 213462-213483; DOI: 10.1016/j.ccr.2020.213462.
The skilled artisan is also familiar with the fact that the BODIPY base structure shown below

- is not ideally suitable as emitter in an organic electroluminescent device, for example due to intermolecular Π-Π interactions and the associated self-quenching.

It is common knowledge to those skilled in the art that one may arrive at more suitable emitter molecules for organic electroluminescent devices by attaching bulky groups as substituents to the BODIPY core structure shown above. These bulky groups may for example (among many others) be aryl, heteroaryl, alkyl or alkoxy substituents or condensed polycyclic aromatics, or heteroaromatics, all of which may optionally be substituted. The choice of suitable substituents at the BODIPY core is obvious for the skilled artisan and can easily be derived from the state of the art. The same holds true for the multitude of synthetic pathways which have been established for the synthesis and subsequent modification of such molecules.
See for example: B.M Squeo, M. Pasini, Supramolecular Chemistry 2020, 32(1), 56-70, DOI: 10.1080/10610278.2019.1691727; M. Poddar, R. Misra, Coordination Chemistry Reviews 2020, 421, 213462-213483; DOI: 10.1016/j.ccr.2020.213462.
Examples of BODIPY-based emitters that may be suitable as small FWHM emitters S^Bin the context of the present invention are shown below:
It is understood that this does not imply that BODIPY-derivatives with other structural features than those shown above are not suited as small FWHM emitters S^Bin the context of the present invention.
For example, the BODIPY-derived structures disclosed in US2020251663 (A1), EP3671884 (A1), US20160230960 (A1), US20150303378 (A1) or derivatives thereof may be suitable small FWHM emitters S^Bfor use according to the present invention.
Furthermore, it is known to those skilled in the art, that one may also arrive at emitters for organic electroluminescent devices by replacing one or both of the fluorine substituents attached to the central boron atom of the BODIPY core structure by alkoxy or aryloxy groups which are attached via the oxygen atom and may optionally be substituted, preferably with electron-withdrawing substituents such as fluorine (F) or trifluoromethyl (CF₃). Such molecules are for example disclosed in US2012037890 (A1) and the person skilled in the art understands that these BODIPY-related compounds may also be suitable small FWHM emitters S^Bin the context of the present invention. Examples of such emitter molecules are shown below, which does not imply that only the shown structures may be suitable small FWHM emitters S^Bin the context of the present invention:
Additionally, the BODIPY-related boron-containing emitters disclosed in US20190288221 (A1) constitute a group of emitters that may provide suitable small FWHM emitters S^Bfor use according to the present invention.
Another class of molecules suitable to provide small FWHM emitters S^Bin the context of the invention are near-range-charge-transfer (NRCT) emitters.
Typical NRCT emitters are described in the literature to show a delayed component in the time-resolved photoluminescence spectrum and exhibit a near-range HOMO-LUMO separation. See for example: T. Hatakeyama, K. Shiren, K. Nakajima, S. Nomura, S. Nakatsuka, K. Kinoshita, J. Ni, Y. Ono, and T. Ikuta, Advanced Materials 2016, 28(14), 2777, DOI: 10.1002/adma.201505491.
Typical NRCT emitters only show one emission band in the emission spectrum, wherein typical fluorescence emitters display several distinct emission bands due to vibrational progression.
The skilled artisan knows how to design and synthesize NRCT emitters that may be suitable as small FWHM emitters S^Bin the context of the present invention. For example, the emitters disclosed in EP3109253 (A1) may be used as small FWHM emitters S^Bin the context of the present invention.
Furthermore, for example, US2014058099 (A1), US2009295275 (A1), US2012319052 (A1), EP2182040 (A2), US2018069182 (A1), US2019393419 (A1), US2020006671 (A1), US2020098991 (A1), US2020176684 (A1), US2020161552 (A1), US2020227639 (A1), US2020185635 (A1), EP3686206 (A1), EP3686206 (A1), WO2020217229 (A1), WO2020208051 (A1), and US2020328351 (A1) disclose emitter materials that may be suitable as small FWHM emitters S^Bfor use according to the present invention.
A group of emitters that may be used as small FWHM emitters S^Bin the context of the present invention are the boron (B)-containing emitters including or consisting of a structure according to the following Formula DABNA-I:

- wherein
- each of ring A′, ring B′, and ring C′ independently of each other represents an aromatic or heteroaromatic ring, each including 5 to 24 ring atoms, out of which, in case of a heteroaromatic ring, 1 to 3 ring atoms are heteroatoms independently of each other selected from N, O, S, and Se; wherein
- one or more hydrogen atoms in each of the aromatic or heteroaromatic rings A′, B′, and C′ are optionally and independently of each other substituted by a substituent R^DABNA-1which is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-2)₂, OR^DABNA-2SR^DABNA-2Si(R^DABNA-2)₃, B(OR^DABNA-2)₂, OSO₂, R^DABNA-2, CF₃, CN, halogen (F, Cl, Br, I),
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-2and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, C≡C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^DABNA-2and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), O, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^DABNA-2and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C-CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^DABNA-2and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C-CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^DABNA-2and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by , R^DABNA-2C═CR^DABNA-2, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^DABNA-2
- C₃-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-2
- and aliphatic, cyclic amines including 4 to 18 carbon atoms and 1 to 3 nitrogen atoms,
- R^DABNA-2is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-6)₂, OR^DABNA-6SR^DABNA-6Si(R^DABNA-6)₃, B(OR^DABNA-6)₂, OSO₂, R^DABNA-6, CF₃, CN, halogen (F, Cl, Br, I),
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₁-C₅-alkoxy,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₁-C₅-thioalkoxy,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₂-C₅-alkenyl,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₂-C₅-alkynyl,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-6
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-6
- and aliphatic, cyclic amines including 4 to 18 carbon atoms and 1 to 3 nitrogen atoms;
- wherein two or more adjacent substituents selected from R^DABNA-1and R^DABNA-2optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′, wherein the optionally so formed fused ring system (i.e., the respective ring A′, B′ or C′ and the additional ring(s) that are optionally fused to it) includes in total 8 to 30 ring atoms;

Y^aand Y^bare independently of each other selected from a direct (single) bond, NR^DABNA-3, O, S, C(R^DABNA-3)₂, Si(R^DABNA-3)₂, BR^DABNA-3and Se;
R^DABNA-3is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-4)₂, OR^DABNA-4SR^DABNA-4, Si(R^DABNA-4)₃, B(OR^DABNA-4)₂, OSO₂, R^DABNA-4, CF₃, CN, halogen (F, Cl, Br, I),

- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-4; and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, C≡C, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4, P(═O)(R^DABNA-4), SO, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^DABNA-4; and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, C═C, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4, P(═O)(R^DABNA-4), O, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^DABNA-4; and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, C═C, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4DABNA-4), SO, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^DABNA-4; and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, C═C, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4DABNA-4), SO, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^DABNA-4; and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4, P(═O)(R^DABNA-4), O, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₃-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- and aliphatic, cyclic amines including 4 to 18 carbon atoms and 1 to 3 nitrogen atoms,
- R^DABNA-4is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-5)₂, OR^DABNA-5SR^DABNA-5, Si(R^DABNA-5)₃, B(OR^DABNA-5)₂, OSO₂, R^DABNA-5, CF₃, CN, halogen (F, Cl, Br, I),
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═0 C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), O, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^DABNA-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═0 C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^DABNA-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^DABNA-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^DABNA-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), O, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^DABNA-5
- C₃-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-5
- and aliphatic, cyclic amines including 4 to 18 carbon atoms and 1 to 3 nitrogen atoms,
- R^DABNA-5is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-6)₂, OR^DABNA-6SR^DABNA-6Si(R^DABNA-6)₃, B(OR^DABNA-6)₂, OSO₂, R^DABNA-6, CF₃, CN, halogen (F, Cl, Br, I),
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₁-C₅-alkoxy,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₁-C₅-thioalkoxy,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₂-C₅-alkenyl,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₂-C₅-alkynyl,
- which is optionally substituted with one or more substituents R^DABNA-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-6
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-6
- and aliphatic, cyclic amines including 4 to 18 carbon atoms and 1 to 3 nitrogen atoms;
- wherein two or more adjacent substituents selected from R^DABNA-3, R^DABNA-4and R^DABNA-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other, wherein the optionally so formed ring system includes in total 8 to 30 ring atoms;
- R^DABNA-6is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, OPh (Ph=phenyl), SPh, CF₃, CN, F, Si(C₁-C₅-alkyl)₃, Si(Ph)₃,
- C₁-C₅-alkyl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, Ph, CN, CF₃, or F;
- C₁-C₅-alkoxy,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkenyl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkynyl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, C₁-C₅-alkyl, SiMe₃, SiPh₃or C₆-C₁₈-aryl substituents;
- C₃-C₁₇-heteroaryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, C₁-C₅-alkyl, SiMe₃, SiPh₃or C₆-C₁₈-aryl substituents;
- N(C₆-C₁₈-aryl)₂,
- N(C₃-C₁₇-heteroaryl)₂; and
- N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- wherein in case, one of Y^aand Y^bis or both of Y^aand Y^bare NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3the one or the two substituents R^DABNA-3may optionally and independently of each other be bound to one or both of the adjacent rings A′ and B′ (for Y^a═NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3) or A′ and C′ (for Yb═NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3) via a direct (single) bond or via a connecting atom or atom group being in each case independently selected from NR^DABNA-1, O, S, C(R^DABNA-1)₂, Si(R^DABNA-1)₂, BR^DABNA-1and Se
- and wherein optionally, two or more, preferably two, structures of Formula DABNA-I are conjugated with each other, preferably fused to each other by sharing at least one, more preferably exactly one, bond;
- wherein optionally two or more, preferably two, structures of Formula DABNA-I are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula DABNA-I) which preferably is any of the rings A′, B′, and C′ of Formula DABNA-I, but may also be any aromatic or heteroaromatic substituent selected from R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5and R^DABNA-6, in particular R^DABNA-3or any aromatic or heteroaromatic ring formed by two or more adjacent substituents as stated above, wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula DABNA-I that share the ring (i.e., the shared ring may for example be ring C′ of both structures of Formula DABNA-I optionally included in the emitter or the shared ring may for example be ring B′ of one and ring C′ of the other structure of Formula DABNA-I optionally included in the emitter); and
- wherein optionally at least one of R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5and R^DABNA-6is replaced by a bond to a further chemical entity of Formula DABNA-I and/or wherein optionally at least one hydrogen atom of any of R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5and R^DABNA-6is replaced by a bond to a further chemical entity of Formula DABNA-I.

In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one of the one or more small FWHM emitters S^Bincludes a structure according to Formula DABNA-I.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, each small FWHM emitter S^Bincludes a structure according to Formula DABNA-I.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one of the one or more small FWHM emitters S^Bconsists of a structure according to Formula DABNA-I.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, each small FWHM emitter S^Bconsists of a structure according to Formula DABNA-I.
In a preferred embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, A′, B′, and C′ are all aromatic rings with 6 ring atoms each (i.e., they are all benzene rings).
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, Y^aand Y^bare independently of each other selected from NR^DABNA-3, O, O, C(R^DABNA-3)₂, and Si(R^DABNA-3)₂.
In a preferred embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, Y^aand Y^bare independently of each other selected from NR^DABNA-3, O, and S.
In an even more preferred embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, Y^aand Y^bare independently of each other selected from NR^DABNA-3and 0.
In a particularly preferred embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, Y^aand Y^bare both NR^DABNA-3
In a particularly preferred embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, Y^aand Y^bare identical and are both NR^DABNA-3
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I,

- R^DABNA-1, is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-2)₂, OR^DABNA-2SR^DABNA-2Si(R^DABNA-2)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-2
- C₁-C₅-alkoxy,
- which is optionally substituted with one or more substituents R^DABNA-2
- C₁-C₅-thioalkoxy,
- which is optionally substituted with one or more substituents R^DABNA-2
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-2
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-2.

R^DABNA-2is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-6)₂, OR^DABNA-6SR^DABNA-6Si(R^DABNA-6)₃, CF₃, CN, F,

- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-6.
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-6.
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-6.
- wherein two or more adjacent substituents selected from R^DABNA-1and R^DABNA-2optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′, wherein the optionally so formed fused ring system (i.e., the respective ring A′, B′ or C′ and the additional ring(s) that are optionally fused to it) includes in total 8 to 30 ring atoms.

In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I,

- R^DABNA-1, is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-2)₂, OR^DABNA-2SR^DABNA-2Si(R^DABNA-2)₃,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-2.
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-2.
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-2.

- R^DABNA-1, is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-2)₂, OR^DABNA-2SR^DABNA-2
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-2.
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-2.
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-2.

R^DABNA-2is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, OPh, CN, Me, ⁱPr, ^tBu, Si(Me)₃,

- Ph,
- which is optionally substituted with one or more substituents R^DABNA-6
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-6
- wherein two or more adjacent R^DABNA-1form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′, wherein the optionally so formed fused ring system (i.e., the respective ring A′, B′ or C′ and the additional ring(s) that are optionally fused to it) includes in total 8 to 30 ring atoms.

In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I,
R^DABNA1, is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, OPh, Me, ⁱPr, ^tBu, Si(Me)₃,

- Ph,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- wherein two or more adjacent substituents R^DABNA-1optionally form a mono or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′, wherein the optionally so formed fused ring system (i.e., the respective ring A′, B′ or C′ and the additional ring(s) that are optionally fused to it) includes in total 8 to 30 ring atoms.

- R^DABNA-1, is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, Me, ⁱPr, ^tBu,
- Ph,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph or CN;
- carbazolyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph or CN;
- triazinyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, or Ph;
- pyrimidinyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, or Ph;
- pyridinyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, or Ph;
- wherein two or more adjacent substituents R^DABNA-1optionally form a mono or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′, wherein the optionally so formed fused ring system (i.e., the respective ring A′, B′ or C′ and the additional ring(s) that are optionally fused to it) includes in total 8 to 30 ring atoms.

In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, adjacent substituents selected from R^DABNA-1and R^DABNA-2do not form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I,

- R^DABNA-3is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium,
- C₁-C₄-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- R^DABNA-4is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^DABNA-5)₂, OR^DABNA-5SR^DABNA-5, Si(C-C₅-alkyl)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-5
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-5
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-5
- R^DABNA-5is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, OPh, Si(Me)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- wherein two or more adjacent substituents selected from R^DABNA-3, R^DABNA-4and R^DABNA-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other, wherein the optionally so formed ring system includes in total 8 to 30 ring atoms.

- R^DABNA-3is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium,
- C₁-C₄-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- R^DABNA-4is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, OPh, Si(Me)₃, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- wherein two or more adjacent substituents selected from R^DABNA-3and R^DABNA-4do not form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other.

- R^DABNA-3is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium,
- C₁-C₄-alkyl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- C₃-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^DABNA-4
- R^DABNA-4is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium;
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- C₃-C₁₇-heteroaryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- wherein two or more adjacent substituents selected from R^DABNA-3and R^DABNA-4do not form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other.

- R^DABNA-3is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu,
- C₆-C₁₈-aryl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- wherein two or more adjacent substituents selected from R^DABNA-3do not form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other.

- R^DABNA-3is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu, and
- Ph,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, Me, ⁱPr, ^tBu, Ph, or CN;
- wherein two or more adjacent substituents selected from R^DABNA-3do not form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other.

- R^DABNA-6is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, OPh (Ph=phenyl), SPh, CF₃, CN, F, Si(C₁-C₅-alkyl)₃, Si(Ph)₃,
- C₁-C₅-alkyl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, Ph, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, C₁-C₅-alkyl, SiMe₃, SiPh₃or C₆-C₁₈-aryl substituents;
- C₃-C₁₇-heteroaryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, C₁-C₅-alkyl, SiMe₃, SiPh₃or C₆-C₁₈-aryl substituents;
- N(C₆-C₁₈-aryl)₂,
- N(C₃-C₁₇-heteroaryl)₂; and
- N(C₃-C₁7-heteroaryl)(C₆-C₁₈-aryl).

- R^DABNA-6is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, OPh (Ph=phenyl), SPh, CF₃, CN, F, Si(Me)₃, Si(Ph)₃,
- C₁-C₅-alkyl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, Ph, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, Me, ⁱPr, ^tBu, SiMe₃, SiPh₃or Ph;
- C₃-C₁₇-heteroaryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, O, Me, ⁱPr, ^tBu, SiMe₃, SiPh₃or Ph.

- R^DABNA-6is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(Ph)₂, CN, F, Me, ⁱPr, ^tBu,
- Ph,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, Me, ⁱPr, ^tBu, or Ph;
- C₃-C₁₇-heteroaryl,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, Me, ⁱPr, ^tBu, or Ph.

- R^DABNA-6is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, Me, ⁱPr, ^tBu,
- Ph,
- wherein optionally one or more hydrogen atoms are independently substituted by deuterium, Me, ⁱPr, ^tBu, or Ph.

In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula DABNA-I, when Y^aand/or Y^bis/are NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3, the one or the two substituents R^DABNA-3do not bond to one or both of the adjacent rings A′ and B′ (for Y^a═NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3) or A′ and C′ (for Y^b═NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3)
In one embodiment, small FWHM emitters S^Bin the context of the present invention may optionally also be multimers (e.g., dimers) of the aforementioned Formula DABNA-I, which means that their structure includes more than one subunits, each of which has a structure according to Formula DABNA-I. In this case, the skilled artisan will understand that the two or more subunits according to Formula DABNA-I may for example be conjugated, preferably fused to each other (i.e., sharing at least one bond, wherein the respective substituents attached to the atoms forming that bond may no longer be present). The two or more subunits may also share at least one, preferably exactly one, aromatic or heteroaromatic ring. This means that, for example, a small FWHM emitter S^Bmay include two or more subunits each having a structure of Formula DABNA-I, wherein these two subunits share one aromatic or heteroaromatic ring (i.e., the respective ring is part of both subunits). As a result, the respective multimeric (e.g., dimeric) emitter S^Bmay not contain two whole subunits according to Formula DABNA-I as the shared ring is only present once. Nevertheless, the skilled artisan will understand that herein, such an emitter is still considered a multimer (for example a dimer if two subunits having a structure of Formula DABNA-I are included) of Formula DABNA-I. The same holds true for multimers sharing more than one ring. It is preferred that the multimers are dimers including two subunits, each having a structure of Formula DABNA-I.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each small FWHM emitter S^B, is a dimer of Formula DABNA-I as described above, which means that the emitter includes two subunits, each having a structure according to Formula DABNA-I.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of two or more, preferably of exactly two, structures according to Formula DABNA-I (i.e., subunits),

- wherein these subunits share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula DABNA-I) and wherein the shared ring(s) may be any of the rings A′, B′, and C′ of Formula DABNA-I, but may also be any aromatic or heteroaromatic substituent selected from R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5and R^DABNA-6, in particular R^DABNA-3, or any aromatic or heteroaromatic ring formed by two or more adjacent substituents as stated above, wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula DABNA-I that share the ring (i.e., the shared ring may for example be ring C′ of both structures of Formula DABNA-I optionally included in the emitter or the shared ring may for example be ring B′ of one and ring C′ of the other structure of Formula DABNA-I optionally included in the emitter).

In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of two or more, preferably of exactly two, structures according to Formula DABNA-I (i.e., subunits),

- wherein at least one of R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5and R^DABNA-6is replaced by a bond to a further chemical entity of Formula DABNA-I and/or wherein at least one hydrogen atom of any of R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5and R^DABNA-6is replaced by a bond to a further chemical entity of Formula DABNA-I.

Non-limiting examples of emitters including or consisting of a structure according to Formula DABNA-I that may be used as small FWHM emitters S^Baccording to the present invention are listed below.
A group of emitters that may be used as small FWHM emitters S^Bin the context of the present invention are emitters including or consisting of a structure according to the following Formula BNE-1:

- wherein,
- c and d are both integers and independently of each other selected from 0 and 1;
- e and f are both integers and selected from 0 and 1, wherein e and f are (always) identical (i.e., both 0 or both 1);
- g and h are both integers and selected from 0 and 1, wherein g and h are (always) identical (i.e., both 0 or both 1);
- if d is 0, O, e and f are both 1, and if d is 1, e and f are both 0;
- if c is 0, O, g and h are both 1, and if c is 1, g and h are both 0;
- V¹is selected from nitrogen (N) and CR^BNE-V
- V²is selected from nitrogen (N) and CR^BNE-1;
- X³is selected from the group consisting of a direct bond, CR^BNE-3, R^BNE-4
- C═CR^BNE-3, R^BNE-4, ═O, C═NR^BNE-3, NR^BNE-3BNE-3, R^BNE-4, S, S(O) and S(O)₂;
- Y²is selected from the group consisting of a direct bond, CR^BNE-3′, R^BNE-4′
- C═CR^BNE-3′BNE-4′, ═O, C═NR^BNE-3′, NR^BNE-3′ BNE-3′, R^BNE-4′, and S(O)₂;
- R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-Vare each independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(OR^BNE-5)₂B(R^BNE-5)₂, OSO₂R^BNE-5, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), O, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-d, R^BNE-d, and R^BNE-e,are independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(OR^BNE-5)₂B(R^BNE-5)₂, OSO₂R^BNE-5, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5, C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), O, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-aand
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-a
- R^BNE-ais at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(OR^BNE-5)₂B(R^BNE-5)₂, OSO₂R^BNE-5, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5, C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5, C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), O, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-5is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-6)₂, OR^BNE-6, Si(R^BNE-6)₃, B(OR^BNE-6)₂B(R^BNE-6)₂, OSO₂R^BNE-6, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, SO, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, SO, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), O, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, C≡C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), O, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6, C═CR^BNE-6, C≡C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), O, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6, C═CR^BNE-6, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-6and
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-6
- R^BNE-6is at each occurrence independently from another selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, Ph or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkenyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkynyl,
- wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- N(C₆-C₁₈-aryl)₂;
- N(C₂-C₁₇-heteroaryl)₂, and
- N(C₂-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- wherein R^BNE-IIIand R^BNE-e,optionally combine to form a direct single bond;
- and
- wherein two or more of substituents R^BNE-a, R^BNE-d, R^BNE-d′, R^BNE-e, R^BNE-3′, R^BNE-4′, R^BNE-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein two or more of the substituents R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-Voptionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are conjugated with each other, preferably fused to each other by sharing at least one, more preferably exactly one, bond;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula BNE-1) which preferably is any of the rings a, b, and c′ of Formula BNE-1, but may also be any aromatic or heteroaromatic substituent selected from R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, and R^BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents as stated above, wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring (i.e., the shared ring may for example be ring c′ of both structures of Formula BNE-1 optionally included in the emitter or the shared ring may for example be ring b of one and ring c′ of the other structure of Formula BNE-1 optionally included in the emitter); and
- wherein optionally at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1 and/or wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1.

In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one of the one or more small FWHM emitters S^Bincludes a structure according to Formula BNE-1.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, each small FWHM emitter S^Bincludes a structure according to Formula BNE-1.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one of the one or more small FWHM emitters S^Bconsists of a structure according to Formula BNE-1.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, each small FWHM emitter S^Bconsists of a structure according to Formula BNE-1.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, V¹is CR^BNE-Vand V²is CR^BNE-I.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, V¹and V²are both nitrogen (N).
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, V¹is nitrogen (N) and V²is CR^BNE-1
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, V¹is CR^BNE-v and V²is nitrogen (N).
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, c and d are both 0.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, c is 0 and d is 1.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, c is 1 and d is 0.
In a preferred embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, c and d are both 1.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1,

- X³is selected from the group consisting of a direct bond, CR^BNE-3, R^BNE-4, C═O, NR^BNE-3, SIR^BNE-3, R^BNE-4; and
- Y²is selected from the group consisting of a direct bond, CR^BNE-3′, R^BNE-4′, C═O, NR^BNE-3, SIR^BNE-3′, R^BNE-4′,

In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1,

- X³is selected from the group consisting of a direct bond, CR^BNE-3, R^BNE-4, NR^BNE-3, O, S, SiR^BNE-3, R^BNE-4; and
- Y²is selected from the group consisting of a direct bond, CR^BNE-3′, R^BNE-4′, NR^BNE-3′, O, S, SIR^BNE-3′, R^BNE-4′

- X³is selected from the group consisting of a direct bond, CR^BNE-3, R^BNE-4, NR^BNE-3, O, S, SiR^BNE-3R^BNE-4; and
- Y²is a direct bond.

- X³is a direct bond or NR^BNE-3and
- Y²is a direct bond.

- X³is NR^BNE-3and
- Y²is a direct bond.

- R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-Vare each independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(OR^BNE-5)₂, B(R^BNE-5)₂, OSO₂R^BNE-5, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), O, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), O, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-d, R^BNE-d, and R^BNE-e,are independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, SO, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-aand
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-a
- R^BNE-ais at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(OR^BNE-5)₂B(R^BNE-5)₂, OSO₂R^BNE-5, CF₃, CN, F, C₁, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), O, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-5is at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-6)₂, OR^BNE-6, Si(R^BNE-6)₃, B(OR^BNE-6)₂B(R^BNE-6)₂, OSO₂R^BNE-6, CF₃, CN, F, Cl, Br, I,
- C₁-C₄₀-alkyl,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, C≡C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₁-C₄₀-alkoxy,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, C≡C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₁-C₄₀-thioalkoxy,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, C≡C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₂-C₄₀-alkenyl,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, C≡C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₂-C₄₀-alkynyl,
- which is optionally substituted with one or more substituents R^BNE-6and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6
- C₆-C₆₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-6; and
- C₂-C₅₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-6
- R^BNE-6is at each occurrence independently from another selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, Ph or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkenyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkynyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- N(C₆-C₁₈-aryl)₂;
- N(C₂-C₁₇-heteroaryl)₂, and
- N(C₂-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- wherein R^BNE-IIIand R^BNE-e,optionally combine to form a direct single bond;
- and
- wherein two or more of substituents R^BNE-a, R^BNE-d, R^BNE-d′, R^BNE-e, R^BNE-3′, R^BNE-4′, R^BNE-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein two or more of the substituents R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-Voptionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are conjugated with each other, preferably fused to each other by sharing at least one, more preferably exactly one, bond;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula BNE-1) which preferably is any of the rings a, b, and c′ of Formula BNE-1, but may also be any aromatic or heteroaromatic substituent selected from R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, and R^BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents as stated above; wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring (i.e., the shared ring may for example be ring c′ of both structures of Formula BNE-1 optionally included in the emitter or the shared ring may for example be ring b of one and ring c′ of the other structure of Formula BNE-1 optionally included in the emitter); and
- wherein optionally at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1 and/or wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1.

- R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-Vare each independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(R^BNE-5)₂, CF₃, CN, F, Cl, Br, I,
- C₁-C₁₈-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C≡C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₃₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₂₉-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-d, R^BNE-d, and R^BNE-e,are independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F, Cl, Br, I,
- C₁-C₁₈-alkyl,
- which is optionally substituted with one or more substituents R^BNE-aand
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₃₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-aand
- C₂-C₂₉-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-a
- R^BNE-ais at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(R^BNE-5)₂, CF₃, CN, F, Cl, Br, I,
- C₁-C₁₈-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5and
- wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5
- C₆-C₃₀-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₂₉-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-5is at each occurrence independently from another selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-thioalkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkenyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₂-C₅-alkynyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- N(C₆-C₁₈-aryl)₂;
- N(C₂-C₁₇-heteroaryl)₂, and
- N(C₂-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- wherein R^BNE-IIIand R^BNE-e,optionally combine to form a direct single bond;
- and
- wherein two or more of substituents R^BNE-a, R^BNE-d, R^BNE-d′, R^BNE-e, R^BNE-3′, R^BNE-4′, R^BNE-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein two or more of the substituents R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-Voptionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are conjugated with each other, preferably fused to each other by sharing at least one, more preferably exactly one, bond;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula BNE-1) which preferably is any of the rings a, b, and c′ of Formula BNE-1, but may also be any aromatic or heteroaromatic substituent selected from R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, and R^BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents as stated above; wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring (i.e., the shared ring may for example be ring c′ of both structures of Formula BNE-1 optionally included in the emitter or the shared ring may for example be ring b of one and ring c′ of the other structure of Formula BNE-1 optionally included in the emitter); and
- wherein optionally at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1 and/or wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, BNE-a R^BNE-e, R^BNE-d,BNE-d′ is replaced by a bond to a further chemical entity of Formula BNE-1.

- R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-Vare each independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(R^BNE-5)₂, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-d, R^BNE-d, and R^BNE-e,are independently of each other selected from the group consisting of: hydrogen, deuterium, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^BNE-a
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^BNE-aand
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-a
- R^BNE-ais at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(R^BNE-5)₂, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^BNE-5and
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-5is at each occurrence independently from another selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₁-C₅-alkoxy,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- N(C₆-C₁₈-aryl)₂;
- N(C₂-C₁₇-heteroaryl)₂, and
- N(C₂-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- wherein R^BNE-IIIand R^BNE-e,optionally combine to form a direct single bond;
- and
- wherein two or more of substituents R^BNE-a, R^BNE-d, R^BNE-d′, R^BNE-e, R^BNE-3′, R^BNE-4′, R^BNE-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein two or more of the substituents R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-Voptionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are conjugated with each other, preferably fused to each other by sharing at least one, more preferably exactly one, bond;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula BNE-1) which preferably is any of the rings a, b, and c′ of Formula BNE-1, but may also be any aromatic or heteroaromatic substituent selected from R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, and R^BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents as stated above; wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring (i.e., the shared ring may for example be ring c′ of both structures of Formula BNE-1 optionally included in the emitter or the shared ring may for example be ring b of one and ring c′ of the other structure of Formula BNE-1 optionally included in the emitter); and
- wherein optionally at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1 and/or wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1.

- R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-V, are each independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(R^BNE-5)₂, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^BNE-5; and
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-d, R^BNE-d, and R^BNE-e,are independently of each other selected from the group consisting of: hydrogen, deuterium,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^BNE-a
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^BNE-aand
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-a
- R^BNE-ais at each occurrence independently of each other selected from the group consisting of: hydrogen, deuterium, N(R^BNE-5)₂, OR^BNE-5, Si(R^BNE-5)₃, B(R^BNE-5)₂, CF₃, CN, F,
- C₁-C₅-alkyl,
- which is optionally substituted with one or more substituents R^BNE-5
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more substituents R^BNE-5; and
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more substituents R^BNE-5
- R^BNE-5is at each occurrence independently from another selected from the group consisting of: hydrogen, deuterium, OPh, CF₃, CN, F,
- C₁-C₅-alkyl,
- wherein one or more hydrogen atoms are optionally, independently from each other substituted by deuterium, CN, CF₃, or F;
- C₆-C₁₈-aryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- C₂-C₁₇-heteroaryl,
- which is optionally substituted with one or more C₁-C₅-alkyl substituents;
- N(C₆-C₁₈-aryl)₂;
- N(C₂-C₁₇-heteroaryl)₂, and
- N(C₂-C₁₇-heteroaryl)(C₆-C₁₈-aryl);
- wherein R^BNE-IIIand R^BNE-e,optionally combine to form a direct single bond;
- and
- wherein two or more of substituents R^BNE-a, R^BNE-d, R^BNE-d′, R^BNE-e, R^BNE-3′, R^BNE-4′, R^BNE-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein two or more of the substituents R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-Voptionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are conjugated with each other, preferably fused to each other by sharing at least one, more preferably exactly one, bond;
- wherein optionally two or more, preferably two, structures of Formula BNE-1 are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring may be part of both structures of Formula BNE-1) which preferably is any of the rings a, b, and c′ of Formula BNE-1, but may also be any aromatic or heteroaromatic substituent selected from R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, and R^BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents as stated above; wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring (i.e., the shared ring may for example be ring c′ of both structures of Formula BNE-1 optionally included in the emitter or the shared ring may for example be ring b of one and ring c′ of the other structure of Formula BNE-1 optionally included in the emitter); and
- wherein optionally at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1 and/or wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1.

In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, R^BNE-IIIand R^BNE-e, combine to form a direct single bond.
In one embodiment of the invention, in which in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1, R^BNE-IIIand R^BNE-e, do not combine to form a direct single bond.
In one embodiment, fluorescent emitters suitable as small FWHM emitters S^Bin the context of the present invention may optionally also be multimers (e.g., dimers) of the aforementioned Formula BNE-1, which means that their structure includes more than one subunits, each of which has a structure according to Formula BNE-1. In this case, the skilled artisan will understand that the two or more subunits according to Formula BNE-1 may for example be conjugated, preferably fused to each other (i.e., sharing at least one bond, wherein the respective substituents attached to the atoms forming that bond may no longer be present). The two or more subunits may also share at least one, preferably exactly one, aromatic or heteroaromatic ring. This means that, for example, a small FWHM emitter S^Bmay include two or more subunits each having a structure of Formula BNE-1, wherein these two subunits share one aromatic or heteroaromatic ring (i.e., the respective ring is part of both subunits). As a result, the respective multimeric (e.g., dimeric) emitter S^Bmay not contain two whole subunits according to Formula BNE-1 as the shared ring is only present once.
Nevertheless, the skilled artisan will understand that herein, such an emitter is still considered a multimer (for example a dimer if two subunits having a structure of Formula BNE-1 are included) of Formula BNE-1. The same holds true for multimers sharing more than one ring. It is preferred that the multimers are dimers including two subunits, each having a structure of Formula BNE-1.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one small FWHM emitter S^B, preferably each small FWHM emitter S^B, is a dimer of Formula BNE-1 as described above, which means that the emitter includes two subunits, each having a structure according to Formula BNE-1.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of two or more, preferably of exactly two, structures according to Formula BNE-1 (i.e., subunits),

- wherein these two subunits are conjugated, preferably fused to each other by sharing at least one, more preferably exactly one, bond.

In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of two or more, preferably of exactly two, structures according to Formula BNE-1 (i.e., subunits),

- wherein these subunits share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., this ring is part of both structures of Formula BNE-1) which preferably is any of the rings a, b, and c′ of Formula BNE-1, but may also be any aromatic or heteroaromatic substituent selected from R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, and R^BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents as stated above; wherein the shared ring may constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring (i.e., the shared ring may for example be ring c′ of both structures of Formula BNE-1 optionally included in the emitter or the shared ring may for example be ring b of one and ring c′ of the other structure of Formula BNE-1 optionally included in the emitter).

In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, of the one or more small FWHM emitters S^Bincludes or consists of a structure according to Formula BNE-1 (i.e., subunits),

- wherein at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1 and/or wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-1, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity of Formula BNE-1.

Non-limiting examples of fluorescent emitters including or consisting of a structure according to the aforementioned Formula BNE-1 that may be used as small FWHM emitters in the context of the present invention are shown below:
The synthesis of small FWHM emitters S^Bincluding or consisting of a structure according to Formula BNE-1 can be accomplished via standard reactions and reaction conditions known to the skilled artisan.
Typically, the synthesis includes trans ition-metal catalyzed cross coupling reactions and a borylation reaction, all of which are known to the skilled artisan.
For example, WO2020135953 (A1) teaches how to synthesize small FWHM emitters S^Bincluding or consisting of a structure according to Formula BNE-1.
Furthermore, US2018047912 (A1) teaches how to synthesize small FWHM emitters S^Bincluding or consisting of a structure according to Formula BNE-1, in particular with c and d being 0.
It is understood that the emitters disclosed in US2018047912 (A1) and WO2020135953 (A1) may also be used as small FWHM emitters S^Bin the context of the present invention.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, small FWHM emitter S^Bincludes or consists of a structure according to either Formula DABNA-I or Formula BNE-1. The person skilled in the art understands this to mean that if more than one small FWHM emitters S^Bare present in a light-emitting layer B, they may all include or consist of a structure according to Formula DABNA-I or all include or consist of a structure according to Formula BNE-1 or some may include or consist of a structure according to Formula DABNA-I, while others include or consist of a structure according to Formula BNE-1.
One approach to design fluorescent emitters relies on the use of fluorescent polycyclic aromatic or heteroaromatic core structures. The latter are, in the context of the present invention, any structures including more than one aromatic or heteroaromatic ring, preferably more than two such rings, which are, even more preferably, fused to each other or linked via more than one direct bond or linking atom. In other words, the fluorescent core structures include at least one, preferably only one, rigid conjugated Π-system.
The skilled artisan knows how to select a core structure for a fluorescent emitter, for example from US2017077418 (A1). Examples of common core structures of fluorescent emitters are listed below, wherein this does not imply that only these cores may provide small FWHM emitters S^Bsuitable for the use according to the present invention:
The term fluorescent core structure in this context indicates that any molecule including the core may potentially be used as fluorescent emitter. The person skilled in the art knows that the core structure of such a fluorescent emitter may be optionally substituted and which substituents are suitable in this regard, for example from: US2017077418 (A1), M. Zhu. C. Yang, Chemical Society Reviews 2013, 42, 4963, DOI: 10.1039/c3cs35440g; S. Kima, B. Kimb, J. Leea, H. Shina, Y.-II Parkb, J. Park, Materials Science and Engineering R: Reports 2016, 99, 1, DOI: 10.1016/j.mser.2015.11.001; K.R.J. Thomas, N. Kapoor, M.N.K.P. Bolisetty, J.-H. Jou, Y.-L. Chen, Y.-C. Jou, The Journal of Organic Chemistry 2012, 77(8), 3921, DOI: 10.1021/jo300285v; M. Vanga, R.A. Lalancette, F. Jskle, Chemistry—A European Journal 2019, 25(43), 10133, DOI: 10.1002/chem.201901231.
Small FWHM emitters S^Bfor use according to the present invention may be obtained from the aforementioned fluorescent core structures, for example, by attaching sterically demanding substituents to the core that hinder the contact between the fluorescent core and adjacent molecules in the respective layer of an organic electroluminescent device.
In the context of the present invention, a compound, for example a fluorescent emitter is considered to be sterically shielded, when a subsequently defined shielding parameter is equal to or below a certain limit which is also defined in a later subchapter of this text.
It is preferred that the substituents used to sterically shield a fluorescent emitter are not just bulky (i.e., sterically demanding), but also electronically inert, which in the context of the present invention means, that these substituents do not include an active atom as defined in a later subchapter of this text. It is understood that this does not imply that only electronically inert (in other words: not active) substituents may be attached to a fluorescent core structure such as the ones shown above. Active substituents may also be attached to the core structure and may be introduced on purpose to tune the photophysical properties of a fluorescent core structure. In this case, it is preferred, that the active atoms introduced via one or more substituents are again shielded by electronically inert (i.e., not active) substituents.
Based on the aforementioned information and common knowledge from the state of the art, the skilled artisan understands how to choose substituents for a fluorescent core structure that may induce steric shielding of the latter and that are electronically inert as stated above. In particular, US2017077418 (A1) discloses substituents suitable as electronically inert (in other words: not active) shielding substituents. Examples of such substituents include linear, branched or cyclic alkyl groups with 3 to 40 carbon atoms, preferably 3 to 20 carbon atoms, more preferably with 4 to 10 carbon atoms, wherein one or more hydrogen atoms may be replaced by a substituent, preferably by deuterium or fluorine. Other examples include alkoxy groups with 3 to 40 carbon atoms, preferably 3 to 20 carbon atoms, more preferably with 4 to carbon atoms, wherein one or more hydrogen atoms may be replaced by a substituent, preferably by deuterium or fluorine. It is understood that these alkyl and alkoxy substituents may be substituted by substituents other than deuterium and fluorine, for example by aryl groups. In this case, it is preferred that the aryl group as substituent includes 6 to 30 aromatic ring atoms, more preferably 6 to 18 aromatic ring atoms, most preferably 6 aromatic ring atoms, and is preferably not a fused aromatic system such as anthracene, pyrene and the like. Other examples include aryl groups with 6 to 30 aromatic ring atoms, more preferably with 6 to 24 aromatic ring atoms.
One or more hydrogen atom in these aryl substituents may be substituted and preferred substituents are for example aryl groups with 6 to 30 carbon atoms and linear, branched or cyclic alkyl groups with 1 to 20 carbon atoms. All substituents may be further substituted. It is understood that all sterically demanding and preferably also electronically inert (in other words: not active) substituents disclosed in US2017077418 (A1) may serve to sterically shield a fluorescent core (such as those described above) to afford sterically shielded fluorescent emitters suitable as small FWHM emitters S^Bfor use according to the present invention.
Below, non-limiting examples of substituents are shown that may be used as sterically demanding (i.e., shielding) and electronically inert (i.e., not active) substituents in the context of the present invention (disclosed in US2017077418 (A1)):
, wherein each dashed line represents a single bond connecting the respective substituent to a core structure, preferably to a fluorescent core structure. As known to the skilled artisan, trialkylsilyl groups are also suitable for use as sterically demanding and electronically inert substituents.
It is also understood that a fluorescent core may not just bear such sterically shielding substituents, but may also be substituted by further, non-shielding substituents that may or may not be active groups in the context of the present invention (see below for a definition).
Below, examples of sterically shielded fluorescent emitters are shown that may be used as small FWHM emitters S^Bin the context of the present invention. This does not imply that the present invention is limited to organic electroluminescent devices including the shown emitters.
It is understood that sterically shielding substituents (that may or may not be electronically inert as stated above) may be attached to any fluorescent molecules, for example to the aforementioned polycyclic aromatic or heteroaromatic fluorescent cores, the BODIPY-derived structures and the NRCT emitters shown herein and to emitters including a structure of Formula BNE-1. This may result in sterically shielded fluorescent emitters that may be suitable as small FWHM emitters S^Baccording to the invention.
In one embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each, small FWHM emitter S^Bfulfills at least one of the following requirements:

- (i) it is a boron (B)-containing emitter, which means that at least one atom within each small FWHM emitter S^Bis boron (B); and/or
- (ii) it includes a polycyclic aromatic or heteroaromatic core structure, wherein at least two aromatic rings are fused together (e.g., anthracene, pyrene or aza-derivatives thereof).

In one embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each small FWHM emitter S^Bfulfills at least one of the following requirements

- (i) it is a boron (B)-containing emitter, which means that at least one atom within the (respective) small FWHM emitter S^Bis boron (B); and/or
- (ii) it includes a polycyclic aromatic or heteroaromatic core structure, wherein at least two aromatic rings are fused together (e.g., anthracene, pyrene or aza-derivatives thereof).

In one embodiment of the invention, each small FWHM emitter S^Bis a boron (B)-containing emitter, which means that at least one atom within each small FWHM emitter S^Bis boron (B).
In one embodiment of the invention, each small FWHM emitter S^Bincludes a polycyclic aromatic or heteroaromatic core structure, wherein at least two aromatic rings are fused together (e.g., anthracene, pyrene or aza-derivatives thereof).
In one embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each, small FWHM emitter S^Bfulfills at least one (or both) of the following requirements:

- (i) it is a boron (B)-containing emitter, which means that at least one atom within each small FWHM emitter S^Bis boron (B); and/or
- (ii) it includes a pyrene core structure.

In one embodiment of the invention, within at least one, preferably each, light-emitting layer B, at least one, preferably each small FWHM emitter S^Bfulfills at least one (or both) of the following requirements:

- (i) it is a boron (B)-containing emitter, which means that at least one atom within the (respective) small FWHM emitter S^Bis boron (B);
- (ii) it includes a pyrene core structure.

In one embodiment of the invention, each small FWHM emitter S^Bincludes a pyrene core structure.
In a preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, small FWHM emitter S^Bis a boron (B)- and nitrogen (N)-containing emitter, which means that at least one atom within each small FWHM emitter S^Bis boron (B) and at least one atom within each small FWHM emitter S^Bis nitrogen (N).
In a preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, small FWHM emitter S^Bincludes at least one boron atom (B)- that is (directly) covalently bonded to at least one nitrogen atom (N).
In a preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, small FWHM emitter S^Bincludes a boron atom (B) that is trivalent, i.e., bonded via three single bonds.
Steric Shielding
Determination of the Shielding Parameter A
The shielding parameter A of a molecule can be determined as exemplarily described in the following for (fluorescent) emitters, such as those mentioned above. It will be understood that the shielding parameter A typically refers to the unit Angstrom (Å²). This does not imply that only such compounds may be sterically shielded in the context of the present invention, nor that a shielding parameter can only be determined for such compounds.
Determination of the Energy Levels of the Molecular Orbitals
The energy levels of the molecular orbitals may be determined via quantum chemical calculations. For this purpose, in the present case, the Turbomole software package (Turbomole GmbH), version 7.2, may be used. First, a geometry optimization of the ground state of the molecule may be performed using density functional theory (DFT), employing the def2-SV(P) basis set and the BP-86 functional. Subsequently, on the basis of the optimized geometry, a single-point energy calculation for the electronic ground state may be performed employing the B3-LYP functional. From the energy calculation, the highest occupied molecular orbital (HOMO), for example, may be obtained as the highest-energy orbital occupied by two electrons, and the lowest unoccupied molecular orbital (LUMO) as the lowest-energy unoccupied orbital. The energy levels may be obtained in an analogous manner for the other molecular orbitals such as HOMO-1, HOMO-2, . . . LUMO+1, LUMO+2 etc.
The method described herein is independent of the software package used. Examples of other frequently utilized programs for this purpose may be “Gaussian09” (Gaussian Inc.) and Q-Chem 4.1 (Q-Chem, Inc.).
Charge-exchanging molecular orbitals of the (fluorescent) compound
Charge-exchanging molecular orbitals of the (fluorescent) compound may be considered to be the HOMO and LUMO, and all molecular orbitals that may be separated in energy by 75 meV or less from the HOMO or LUMO.
Determination of the active atoms of a molecular orbital
For each charge-exchanging molecular orbital, a determination of which atoms may be active may be conducted. In other words, a generally different set of active atoms may be found for each molecular orbital. There follows a description of how the active atoms of the HOMO may be determined. For all other charge-exchanging molecular orbitals (e.g., HOMO-1, LUMO, LUMO+1, etc.), the active atoms may be determined analogously.
The HOMO may be calculated as described above. To determine the active atoms, the surface on which the orbital has an absolute value of 0.035 (“isosurface with cutoff 0.035”) is inspected. For this purpose, in the present case, the Jmol software (http://jmol.sourceforge.net/), version 14.6.4, is used. Atoms around which orbital lobes with values equal to or larger than the cutoff value may be localized may be considered active. Atoms around which no orbital lobes with values equal to or larger than the cutoff value may be localized may be considered inactive.
(4) Determination of the Active Atoms in the (Fluorescent) Compound
If one atom is active in at least one charge-exchanging molecular orbital, it may be considered to be active in respect of the (fluorescent) compound. Only atoms that may be inactive (non-active) in all charge-exchanging molecular orbitals may be inactive in respect of the (fluorescent) compound.
(5) Determination of the Shielding Parameter A
In a first step, the solvent accessible surface area SASA may be determined for all active atoms according to the method described in B. Lee, F.M. Richards, Journal of Molecular Biology 1971, 55(3), 379, DOI: 10.1016/0022-2836(71)₉₀₃₂₄-X.
For this purpose, the van-der-Waals surface of the atoms of a molecule may be considered to be impenetrable. The SASA of the entire molecule may be then defined as the area of the surface which may be traced by the center of a hard sphere (also called probe) with radius r (the so-called probe radius) while it may be rolled over all accessible points in space at which its surface may be in direct contact with the van-der-Waals surface of the molecule. The SASA value can also be determined for a subset of the atoms of a molecule. In that case, only the surface traced by the center of the probe at points where the surface of the probe may be in contact with the van-der-Waals surface of the atoms that may be part of the subset may be considered. The Lee-Richards algorithm used to determine the SASA for the present purpose may be part of the program package Free SASA (S. Mitternacht, Free SASA: An open source C library for solvent accessible surface area calculations. F1000Res. 2016; 5:189. Published 2016 Feb. 18. doi:10.12688/f1000research.7931.1). The van-der-Waals radii rvDwof the relevant elements may be compiled in the following reference: M. Mantina, A.C. Chamberlin, R. Valero, C.J. Cramer, D.G. Truhlar, The Journal of Physical Chemistry A 2009, 113(19), 5806, DOI: 10.1021/jp8111556. The probe radius r may be set to be 4 Å (r=4 Å) for all SASA determinations for the present purpose.
In the context of the present invention, the shielding parameter A may be obtained by dividing the solvent accessible surface area of the subset of active atoms (labeled S to distinguish from the SASA of the entire molecule) by the number n of active atoms:
A=S/n
In the context of the present invention, a compound may be defined as sterically well-shielded if the shielding parameter A has a value below 2 Å²(A<2.0 Å²).
In the context of the present invention, a compound may be defined as sterically shielded if the shielding parameter A has a value of 1.0 to 5.0 Å²(1.0 Å²<A≤5.0 Å²), preferably 2.0 Å²to 5.0 Å²(2.0 Å²s A 5.0 Å²).
Below, exemplary (fluorescent) emitters are shown, alongside their shielding parameters A, which were determined as stated above. It will be understood that this does not imply that the present invention is limited to organic electroluminescent devices including one of the shown emitters. The depicted emitter compounds are merely non-limiting examples that represent optional embodiments of the invention.
In one embodiment of the invention, each small FWHM emitter S^Bincluded in an organic electroluminescent device according to the invention exhibits a shielding parameter A equal to or smaller than 5.0 Å².
In one embodiment, in at least one, preferably each, light-emitting layer B of the organic electroluminescent device according to the present invention, at least one, preferably each, small FWHM emitter S^Bexhibits a shielding parameter A equal to or smaller than 5.0 Å².
In a preferred embodiment of the invention, each small FWHM emitter S^Bincluded in an organic electroluminescent device according to the invention exhibits a shielding parameter A equal to or smaller than 2.0 Å².
In one embodiment, in at least one, preferably each, light-emitting layer B of the organic electroluminescent device according to the present invention, at least one, preferably each, small FWHM emitter S^Bexhibits a shielding parameter A equal to or smaller than 2.0 Å².
The person skilled in the art understands that not only a fluorescent emitter such as a small FWHM emitter S^Baccording to the present invention may be sterically shielded by attaching shielding substituents. It is understood that for example also a TADF material E^Bin the context of the present invention and also a phosphorescence material P^Bin the context of the present invention may be shielded.
Excited State Lifetimes
A detailed description on how the excited state lifetimes are measured is provided in a following subchapter of this text.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, TADF material E^Bin the context of the present invention exhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 110 μs, preferably equal to or shorter than 100 μs. In one embodiment of the invention, each TADF material E^Bin the context of the present invention exhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 110 μs, preferably equal to or shorter than 100 μs.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, TADF material E^Bin the context of the present invention exhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 75 μs. In one embodiment of the invention, each TADF material E^Bin the context of the present invention exhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 75 μs.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, TADF material E^Bin the context of the present invention exhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 50 μs. In one embodiment of the invention, each TADF material E^Bexhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 50 μs.
In a preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, TADF material E^Bin the context of the present invention exhibits an a delayed fluorescence lifetime τ(E^B) equal to or shorter than 10 μs. In one embodiment of the invention, each TADF material E^Bexhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 10 μs.
In an even more preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, TADF material E^Bin the context of the present invention exhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 5 μs. In one embodiment of the invention, each TADF material E^Bexhibits a delayed fluorescence lifetime τ(E^B) equal to or shorter than 5 μs.
In one embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, phosphorescence material P^Bin the context of the present invention exhibits an excited state lifetime τ(P^B) equal to or shorter than 50 μs. In one embodiment of the invention, each phosphorescence material P^Bexhibits an excited state lifetime τ(P^B) equal to or shorter than 50 μs.
In a preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, phosphorescence material P^Bin the context of the present invention exhibits an excited state lifetime τ(P^B) equal to or shorter than 10 μs. In one embodiment of the invention, each phosphorescence material P^Bexhibits an excited state lifetime τ(P^B) equal to or shorter than 10 μs.
In an even more preferred embodiment of the invention, in at least one, preferably each, light-emitting layer B, at least one, preferably each, phosphorescence material P^Bin the context of the present invention exhibits an excited state lifetime f(P^B) equal to or shorter than 5 μs. In one embodiment of the invention, each phosphorescence material P^Bexhibits an excited state lifetime τ(P^B) equal to or shorter than 5 μs.
In one embodiment of the invention, in an organic electroluminescent device according to the invention, the addition of one or more TADF materials E^Binto one or more sublayers of a light-emitting layers B including one or more phosphorescence materials P^B, one or more small FWHM emitters S^Band optionally one or more host materials H^B, results in a decreased excited state lifetime of the organic electroluminescent device. In a preferred embodiment of the invention the aforementioned addition of a TADF material E^Baccording to the invention decreases the excited state lifetime of the organic electroluminescent device by at least 50%.
Recombination Zone
In the context of the present invention, the emission zone (EZ) in organic electroluminescent devices (in particular in organic light-emitting diodes, OLEDs) such as those described herein represents the zone (i.e., the region) over which the optical stress due to excitons is distributed in the light-emitting layer (EML, for example a light-emitting layer B according to the present invention).
It is known to those skilled in the art that the shape and size of the emission zone (EZ) has an impact on the lifetime of the respective organic electroluminescent device since it reflects the exciton stress per molecule included in the emission zone (EZ). The skilled artisan understands that reduced exciton stress per molecule likely results in a prolonged device lifetime.
In the context of the present invention, the recombination zone (RZ) in organic electroluminescent devices (in particular in organic light-emitting diodes, OLEDs) such as those described herein represents the zone (i.e., the region) in which excitons are generated by electron-hole-recombination.
Herein, in a slightly simplified approach (assuming a sufficiently short exciton diffusion length), it is assumed that the recombination zone (RZ) is (almost) identical to the emission zone (EZ). The recombination zone (RZ, and in our slightly simplified approach also the emission zone, EZ) is correlated to the charge balance between electrons and holes within the light-emitting layer of the respective organic electroluminescent device. Additionally, the recombination zone (RZ, and in our simplified approach also the emission zone, EZ) is influenced by the (electrical) current stress per molecule.
As stated previously, the inventors have surprisingly found that that an organic electroluminescent device's light-emitting layer consisting of one or more (sub)layer(s) as a whole including one or more excitation energy transfer components EET-1, one or more excitation energy transfer components EET-2, which are not identical to EET-1 (i.e., EET-1 and EET-2 do not have the same chemical structure), one or more small full width at half maximum (FWHM) emitter S^Bemitting light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV, and optionally one or more host materials H^B, provides an organic electroluminescent device having a long lifetime, a high quantum yield and exhibiting narrow emission, ideally suitable to achieve the BT-2020 and DCPI3 color gamut.
Furthermore, the inventors have found that this beneficial effect is particularly achieved, if the aforementioned materials included in a light-emitting layer B fulfill the criteria given in the aforementioned Formulas (1) to (6), as far as the respective components are included in the same light-emitting layer B. It is assumed that fulfilling the requirements regarding the HOMO- and LUMO-energies of the one or more excitation energy transfer components EET-1, the one or more excitation energy transfer components EET-2, the one or more small FWHM emitters S^Band the optional one or more host materials H^B, included in a light-emitting layer B according to the present invention may provide the beneficial effect on the device performance partly due to an impact on the recombination zone (RZ).
In light-emitting layers B in the context of the present invention, the recombination zone (RZ) may be distributed more evenly than for example in the absence of EET-1 or EET-2, in particular in the absence of EET-1, in the light-emitting layer.
Herein, to assess the spatial distribution of the recombination zone (RZ) over the respective light-emitting layer B, said light-emitting layer B is imaginarily divided in half by a boundary surface S^EML, wherein S^EMLis parallel to the electron blocking layer (EBL) and to the hole blocking layer (HBL) and located exactly in the middle of the respective light-emitting layer B so that exactly half of the light-emitting layer's volume is located between the HBL and S^EMLand exactly half of the light-emitting layer's volume is located between the EBL and S^EML. This is also shown in FIG. 1 (vide infra).
As known to those skilled in the art, organic electroluminescent devices (in particular an OLEDs) such as those of the present invention do not necessarily include an HBL and/or an EBL. It is understood that, in case the organic electroluminescent device according to the present invention do not have an HBL, the respective light-emitting layer B may be directly adjacent to an electron transport layer (ETL). Along the same lines, in case the organic electroluminescent device according to the present invention should not have an EBL, the respective light-emitting layer B may be directly adjacent to a hole transport layer (HTL). In the exemplary case that neither an EBL nor an HBL is present, the imaginary boundary surface S^EMLwill be parallel to the electron blocking layer (EBL) and to the hole blocking layer (HBL) and located exactly in the middle of the respective light-emitting layer B so that exactly half of the light-emitting layer's volume is located between the ETL and S^EMLand exactly half of the light-emitting layer's volume is located between the HTL and S^EML. This is to say that regardless of the precise device architecture, S^EMLdivides the EML into halves of equal volume.
To assess the volume fraction of the recombination zone lying within one or the other half of the light-emitting layer B, the recombination zone profile (RZ profile) may be determined. The RZ (in a simplified approach also emission zone, EZ) profile may be determined by fitting an optical model of the device, based on a transfer-matrix theory approach for multi-layer systems in combination with a dipole emission model, to angular dependent measurements of the device emission spectra. The measurements may be conducted using a gonio-spectrometer for angular-dependence EL and PL measurements setup (Phelos) by Fluxim AG. The fit and the calculation of the emission zone profile may be done using SETFOS by Fluxim AG. Details of the fit algorithm may be described in B. Perucco, N. Reinke, D. Rezzonico, M. Moos, and B. Ruhstaller, “Analysis of the emission profile in organic light-emitting devices,” Opt. Express 18, A246-A260 (2010).
For this purpose, the first step may be to measure the angular electroluminescence distribution. This allows the determination of the emission modes coming from the OLED. These may be dependent on 1) the refractive index of the materials used in the organic stack; 2) the horizontal orientation of the emitter(s) S^Bemitting light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV in the light-emitting layer B and 3) the RZ distribution which results in different spectral emissions from the emitter when at different positions of the EML. At known refractive index and horizontal dipole orientations, the RZ can therefore be fitted using the appropriate fitting software.
The Gonio-Spectrometer may be used to determine the angular-dependence of the electroluminescence (EL) spectra. In a bottom emission device, light may be emitted through the glass side of the OLED. This will result in light modes being trapped at the organic stack-glass interface. Therefore, the OLED must be placed onto a macro extractor lens that outcouple all the emission modes. The device may be put under a bias to have it emitting at specific characteristics (e.g., constant current or constant voltage) resulting in the desired luminance. Then, the substrate rotates from an angle A to an angle B with a desired step size and the emission may be collected through a spectrophotometer, being dependent of the angle. The spectrometer that collects the EL spectra contains a polarizer that filters the total light output to a 90° or 0° polarization, allowing the determination of the s- (perpendicular to the substrate plane) and p- (parallel to the substrate plane) polarization modes, respectively. These-s and -p polarizations distributions may be used as a target to fit the RZ profile.
In the fitting software (SETFOS by Fluxim AG), the entire stack (substrate and all layers such as anode, hole injection la, hole transportlayer, . . . cathode) may be introduced with the corresponding optical constants. With regard to the EML, the emission properties of the S^Bmay be introduced (orientation, PLQY, emission maximum) and the RZ fitted with the targeted data, i.e., the RZ may be fitted to reproduce the measured angular dependence.
Details of the exemplary fit algorithm are described in B. Perucco, N. Reinke, D. Rezzonico, M. Moos, and B. Ruhstaller, “Analysis of the emission profile in organic light-emitting devices,” Opt. Express 18, A246-A260 (2010).
The volume fraction VF of the recombination zone lying within one or the other half of the light-emitting layer B may be calculated according to:
$V F = \frac{\int_{0}^{d / 2} RZ profile dx}{\int_{0}^{d} RZ profile dx} \cdot 100 %,$

- wherein d is the thickness of the respective EML (e.g., 50 nm) and x is the distance from the boundary surface S^Bbetween the respective EML and the layer adjacent to the respective half of the EML (an EBL for the left half in the example above).

It is preferred that the recombination zone is not solely located in one half of the respective light-emitting layer B, but to some extent distributed over both halves of the respective light-emitting layer B (vide infra).
In one embodiment, for at least one, preferably each, light-emitting layer B of the organic electroluminescent device according to the present invention, the recombination zone (i.e., the region within the respective light-emitting layer(s) B, where electron-hole-recombination occurs upon applying an electrical current to the device) fulfills both of the following criteria:

- (i) 10-90% of its volume is located between the electron blocking layer (EBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the EBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 10-90%); and
- (ii) 10-90% of its volume is located between the hole blocking layer (HBL) and an imaginary boundary surface S^EMLwherein S^EMLis parallel to the HBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 10-90%);
- wherein both the EBL and the HBL are adjacent to the light-emitting layer B with the EBL being closer to the anode and the HBL being closer to the cathode; and
- wherein the total volume of the recombination zone adds up to 100% (e.g., 50% on the EBL-side (i) and 50% on the HBL-side (ii) of the light-emitting layer B being imaginarily divided evenly (in half) by the boundary interface S^EML)

In one embodiment, for at least one, preferably each, light-emitting layer B of the organic electroluminescent device according to the present invention, the recombination zone (i.e., the region within the respective light-emitting layer(s) B, where electron-hole-recombination occurs upon applying an electrical current to the device) fulfills both of the following criteria:

- (i) 20-80% of its volume is located between the electron blocking layer (EBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the EBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 20-80%); and
- (ii) 20-80% of its volume is located between the hole blocking layer (HBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the HBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 20-80%);
- wherein both the EBL and the HBL are adjacent to the light-emitting layer B with the EBL being closer to the anode and the HBL being closer to the cathode; and
- wherein the total volume of the recombination zone adds up to 100% (e.g., 50% on the EBL-side (i) and 50% on the HBL-side (ii) of the light-emitting layer B being imaginarily divided evenly (in half) by the boundary interface S^EML)

- (i) 30-70% of its volume is located between the electron blocking layer (EBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the EBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 30-70%); and
- (ii) 30-70% of its volume is located between the hole blocking layer (HBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the HBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 30-70%);
- wherein both the EBL and the HBL are adjacent to the light-emitting layer B with the EBL being closer to the anode and the HBL being closer to the cathode; and
- wherein the total volume of the recombination zone adds up to 100% (e.g., 50% on the EBL-side (i) and 50% on the HBL-side (ii) of the light-emitting layer B being imaginarily divided evenly (in half) by the boundary interface S^EML)

- (i) 40-60% of its volume is located between the electron blocking layer (EBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the EBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 40-60%); and
- (ii) 40-60% of its volume is located between the hole blocking layer (HBL) and an imaginary boundary surface S^EML, wherein S^EMLis parallel to the HBL and located exactly in the middle of the respective light-emitting layer B (i.e., the volume fraction VF of the recombination zone is 40-60%);
- wherein both the EBL and the HBL are adjacent to the light-emitting layer B with the EBL being closer to the anode and the HBL being closer to the cathode; and
- wherein the total volume of the recombination zone adds up to 100% (e.g., 50% on the EBL-side (i) and 50% on the HBL-side (ii) of the light-emitting layer B being imaginarily divided evenly (in half) by the boundary interface S^EML)

Device Architecture
The person skilled in the art will notice that the at least one light-emitting layer B will typically be incorporated in an organic electroluminescent device of the present invention. Preferably, such an organic electroluminescent device includes at least the following layers: at least one light-emitting layer B, at least one anode layer A and at least one cathode layer C.
Preferably, at least one light-emitting layer B is located between an anode layer A and a cathode layer C. Accordingly, the general set-up is preferably A-B-C. This does of course not exclude the presence of one or more optional further layers. These can be present at each side of A, of B and/or of C.
Preferably, an anode layer A is located on the surface of a substrate. The substrate may be formed by any material or composition of materials. Most frequently, glass slides are used as substrates. Alternatively, thin metal layers (e.g., copper, gold, silver or aluminum films) or plastic films or slides may be used. This may allow a higher degree of flexibility. At least one of both electrodes should be (essentially) transparent in order to allow light emission from the electroluminescent device (e.g., OLED). Usually, an anode layer A is mostly composed of materials allowing to obtain an (essentially) transparent film. Preferably, the anode layer A includes a large content or even consists of transparent conductive oxides (TCOs).
Such an anode layer A may exemplarily include indium tin oxide, aluminum zinc oxide, fluorine tin oxide, indium zinc oxide, PbO, SnO, zirconium oxide, molybdenum oxide, vanadium oxide, wolfram oxide, graphite, doped Si, doped Ge, doped GaAs, doped polyaniline, doped polypyrrole and/or doped polythiophene and mixtures of two or more thereof.
Particularly preferably, an anode layer A (essentially) consists of indium tin oxide (ITO) (e.g., (InO₃)_0.9(SnO₂)_0.1). The roughness of an anode layer A caused by the transparent conductive oxides (TCOs) may be compensated by using a hole injection layer (HIL). Further, a HIL may facilitate the injection of quasi charge carriers (i.e., holes) in that the transport of the quasi charge carriers from the TCO to a hole transport layer (HTL) is facilitated. A hole injection layer (HIL) may include poly-3,4-ethylenedioxy thiophene (PEDOT), polystyrene sulfonate (PSS), MoO₂, V₂O₅, S, CuPC or CuI, in particular a mixture of PEDOT and PSS. A hole injection layer (HIL) may also prevent the diffusion of metals from an anode layer A into a hole transport layer (HTL). A HIL may exemplarily include PEDOT:PSS (poly-3,4-ethylenedioxy thiophene: polystyrene sulfonate), PEDOT (poly-3,4-ethylenedioxy thiophene), mMTDATA (4,4′,4″-tris[phenyl(m-tolyl)amino]triphenylamine), Spiro-TAD (2,2′,7,7′-tetrakis(n,n-diphenylamino)-9,9′-spirobifluorene), DNTPD (N1,N1′-(biphenyl-4,4′-diyl)bis(N1-phenyl-N4,N4-di-m-tolylbenzene-1,4-diamine), NPB (N,N′-bis-(1-naphthalenyl)-N,N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine), NPNPB (N,N′-diphenyl-N,N′-di-[4-(N,N-diphenyl-amino)phenyl]benzidine), MeO-TPD (N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzi-dine), HAT-CN (1,4,5,8,9,11-hexaazatriphenylen-hexacarbonitrile) and/or Spiro-NPD (N,N′-diphenyl-N,N′-bis-(1-naphthyl)-9,9′-spirobifluorene-2,7-diamine).
Adjacent to an anode layer A or a hole injection layer (HIL), typically a hole transport layer (HTL) is located. Herein, any hole transport compound may be used. Exemplarily, electron-rich heteroaromatic compounds such as triarylamines and/or carbazoles may be used as hole transport compound. A HTL may decrease the energy barrier between an anode layer A and a light-emitting layer B (serving as emitting layer (EML)). A hole transport layer (HTL) may also be an electron blocking layer (EBL). Preferably, hole transport compounds bear comparably high energy levels of their triplet states T1. Exemplarily a hole transport layer (HTL) may include a star-shaped heterocycle such as tris(4-carbazoyl-9-ylphenyl)amine (TCTA), poly-TPD (poly(4-butylphenyl-diphenyl-amine)), [alpha]-NPD (poly(4-butylphenyl-diphenyl-amine)), TAPC (4,4′-cyclohexyliden-bis[N,N-bis(4-methylphenyl)benzenamine]), 2-TNATA (4,4′,4″-tris[2-naphthyl(phenyl)-amino]triphenylamine), Spiro-TAD, DNTPD, NPB, NPNPB, MeO-TPD, HAT-CN and/or TrisPcz (9,9′-diphenyl-6-(9-phenyl-9H-carbazol-3-yl)-9H,9′H-3,3′-bicarbazole). In addition, a HTL may include a p-doped layer, which may be composed of an inorganic or organic dopant in an organic hole-transporting matrix. Transition metal oxides such as vanadium oxide, molybdenum oxide or tungsten oxide may exemplarily be used as inorganic dopant. Tetrafluorotetracyanoquinodimethane (F4-TCNQ), copper-pentafluorobenzoate (Cu(I)pFBz) or transition metal complexes may exemplarily be used as organic dopant.
An electron blocking layer (EBL) may exemplarily include mCP (1,3-bis(carbazol-9-yl)benzene), TCTA, 2-TNATA, mCBP (3,3-di(9H-carbazol-9-yl)biphenyl), 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzothiophen-2-yl)phenyl]-9H-carbazole, 9-[3,5-bis(2-dibenzofuranyl)phenyl]-9H-carbazole, 9-[3,5-bis(2-dibenzothiophenyl)phenyl]-9H-carbazole, tris-Pcz, CzSi (9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole), and/or DCB (N,N′-dicarbazolyl-1,4-dimethylbenzene).
The composition of the one or more light-emitting layers B has been described above. Any of the one or more light-emitting layers B according to the invention preferably bears a thickness of not more than 1 mm, more preferably of not more than 0.1 mm, even more preferably of not more than 10 μm, even more preferably of not more than 1 μm, and particularly preferably of not more than 0.1 μm.
In an electron transport layer (ETL), any electron transporter may be used. Exemplarily, compounds poor of electrons such as, e.g., benzimidazoles, pyridines, triazoles, oxadiazoles (e.g., 1,3,4-oxadiazole), phosphinoxides and sulfone, may be used. Exemplarily, an electron transporter ETM (i.e., an electron transport material) may also be a star-shaped heterocycle such as 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi). An ETM may exemplarily be NBphen (2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline), Alq3 (Aluminum-tris(8-hydroxyquinoline)), TSPO1 (diphenyl-4-triphenylsilylphenyl-phosphinoxide), BPyTP2 (2,7-di(2,2′-bipyridin-5-yl)triphenylene), Sif87 (dibenzo[b,d]thiophen-2-yltriphenylsilane), Sif88 (dibenzo[b,d]thiophen-2-yl)diphenylsilane), BmPyPhB (1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene) and/or BTB (4,4′-bis-[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl). Optionally, the electron transport layer may be doped with materials such as Liq (8-hydroxyquinolinolatolithium). Optionally, a second electron transport layer may be located between electron transport layer and cathode layer C. An electron transport layer (ETL) may also block holes or a hole-blocking layer (HBL) is introduced.
An HBL may, for example, include HBM1:
BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline=Bathocuproine), BAIq (bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum), NBphen (2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline), Alq3 (Aluminum-tris(8-hydroxyquinoline)), TSPO1 (diphenyl-4-triphenylsilylphenyl-phosphinoxide), T2T (2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine), T3T (2,4,6-tris(triphenyl-3-yl)-1,3,5-triazine), TST (2,4,6-tris(9,9′-spirobifluorene-2-yl)-1,3,5-triazine), DTST (2,4-diphenyl-6-(3′-triphenylsilylphenyl)-1,3,5-triazine), DTDBF (2,8-bis(4,6-diphenyl-1,3,5-triazinyl)dibenzofuran) and/or TCB/TCP (1,3,5-tris(N-carbazolyl)benzol/1,3,5-tris(carbazol)-9-yl) benzene).
Adjacent to an electron transport layer (ETL), a cathode layer C may be located. Exemplarily, a cathode layer C may include or may consist of a metal (e.g., Al, Au, Ag, Pt, Cu, Zn, Ni, Fe, Pb, LiF, Ca, Ba, Mg, In, W, or Pd) or a metal alloy. For practical reasons, a cathode layer C may also consist of (essentially) intransparent (non-transparent) metals such as Mg, Ca or Al. Alternatively or additionally, a cathode layer C may also include graphite and or carbon nanotubes (CNTs). Alternatively, a cathode layer C may also consist of nanoscale silver wires.
In a preferred embodiment, the organic electroluminescent device includes at least the following layers:

- A) an anode layer A containing at least one component selected from the group consisting of indium tin oxide, indium zinc oxide, PbO, SnO, graphite, doped silicon, doped germanium, doped GaAs, doped polyaniline, doped polypyrrole, doped polythiophene, and mixtures of two or more thereof;
- B) a light-emitting layer B according to present invention as described herein; and
- C) a cathode layer C containing at least one component selected from the group consisting of Al, Au, Ag, Pt, Cu, Zn, Ni, Fe, Pb, In, W, Pd, LiF, Ca, Ba, Mg, and mixtures or alloys of two or more thereof,
- wherein the light-emitting layer B is located between the anode layer A and the cathode layer C.

In one embodiment, when the organic electroluminescent device is an OLED, it may optionally include the following layer structure:

- A) an anode layer A, exemplarily including indium tin oxide (ITO);
- HTL) a hole transport layer HTL;
- B) a light-emitting layer B according to present invention as described herein;
- ETL) an electron transport layer ETL; and
- C) a cathode layer, exemplarily including Al, Ca and/or Mg.

Preferably, the order of the layers herein is A-HTL-B-ETL-C.
Furthermore, the organic electroluminescent device may optionally include one or more protective layers protecting the device from damaging exposure to harmful species in the environment including, exemplarily moisture, vapor and/or gases.
An electroluminescent device (e.g., an OLED) may further, optionally, include a protection layer between an electron transport layer (ETL) D and a cathode layer C (which may be designated as electron injection layer (EIL)). This layer may include lithium fluoride, cesium fluoride, silver, Liq (8-hydroxyquinolinolatolithium), Li₂O, BaF₂, MgO and/or NaF.
Unless otherwise specified, any of the layers, including any of the sublayers, of the various embodiments may be deposited by any suitable method. The layers in the context of the present invention, including at least one light-emitting layer B (which may consist of a single (sub)layer or may include more than one sublayers) and/or one or more sublayers thereof, may optionally be prepared by means of liquid processing (also designated as “film processing”, “fluid processing”, “solution processing” or “solvent processing”). This means that the components included in the respective layer are applied to the surface of a part of a device in liquid state. Preferably, the layers in the context of the present invention, including the at least one light-emitting layer B and/or one or more sublayers thereof, may be prepared by means of spin-coating. This method well-known to those skilled in the art allows obtaining thin and (essentially) homogeneous layers and/or sublayers.
Alternatively, the layers in the context of the present invention, including the at least one light-emitting layer B and/or one or more sublayers thereof, may be prepared by other methods based on liquid processing such as, e.g., casting (e.g., drop-casting) and rolling methods, and printing methods (e.g., inkjet printing, gravure printing, blade coating). This may optionally be carried out in an inert atmosphere (e.g., in a nitrogen atmosphere).
In another preferred embodiment, the layers in the context of the present invention, including the at least one light-emitting layer B and/or one or more sublayers thereof, may be prepared by any other method known in the art, including but not limited to vacuum processing methods well-known to those skilled in the art such as, e.g., thermal (co-)evaporation, organic vapor phase deposition (OVPD), and deposition by organic vapor jet printing (OVJP).
When preparing layers, optionally including one or more sublayers thereof, by means of liquid processing, the solutions including the components of the (sub)layers (i.e., with respect to the light-emitting layer B of the present invention one or more excitation energy transfer components EET-1, one or more excitation energy transfer components EET-2, one or more small FWHM emitters S^B, and optionally one or more host materials H^B) may further include a volatile organic solvent. Such volatile organic solvent may optionally be one selected from the group consisting of tetrahydrofuran, dioxane, chlorobenzene, diethylene glycol diethyl ether, 2-(2-ethoxyethoxy)ethanol, gamma-butyrolactone, N-methyl pyrrolidinone, ethoxyethanol, xylene, toluene, anisole, phenetole, acetonitrile, tetrahydrothiophene, benzonitrile, pyridine, trihydrofuran, triarylamine, cyclohexanone, acetone, propylene carbonate, ethyl acetate, benzene and PGMEA (propylene glycol monoethyl ether acetate). Also a combination of two or more solvents may be used. After applied in liquid state, the layer may subsequently be dried and/or hardened by any means of the art, exemplarily at ambient conditions, at increased temperature (e.g., about 50° C. or about 60° C.) or at diminished pressure.
The organic electroluminescent device as a whole may also form a thin layer of a thickness of not more than 5 mm, not more than 2 mm, not more than 1 mm, not more than 0.5 mm, not more than 0.25 mm, not more than 100 μm, or not more than 10 μm.
An organic electroluminescent device (e.g., an OLED) may be small-sized (e.g., having a surface not larger than 5 mm², or even not larger than 1 mm²), medium-sized (e.g., having a surface in the range of 0.5 to 20 cm²), or a large-sized (e.g., having a surface larger than 20 cm²). An organic electroluminescent device (e.g., an OLED) according to the present invention may optionally be used for generating screens, as large-area illuminating device, as luminescent wallpaper, luminescent window frame or glass, luminescent label, luminescent poser or flexible screen or display. Next to the common uses, an organic electroluminescent device (e.g., an OLED) may exemplarily also be used as luminescent films, “smart packaging” labels, or innovative design elements. Further they are usable for cell detection and examination (e.g., as bio labelling).

Further Definitions and Information

As used throughout, the term “layer” in the context of the present invention preferably refers to a body that bears an extensively planar geometry. It is understood that the same is true for all “sublayers” which a layer may compose.
As used herein, the terms organic electroluminescent device and optoelectronic device and organic light-emitting device may be understood in the broadest sense as any device including one or more light-emitting layers B, each as a whole including one or more excitation energy transfer components EET-1, one or more excitation energy transfer components EET-2, one or more small FWHM emitters S^B, and optionally one or more host materials H^B, for all of which the above-mentioned definitions and preferred embodiments may apply.
The organic electroluminescent device may be understood in the broadest sense as any device based on organic materials that is suitable for emitting light in the visible or nearest ultraviolet (UV) range, i.e., in the wavelength range from 380 to 800 nm.
Preferably, an organic electroluminescent device may be able to emit light in the visible range, i.e., from 400 to 800 nm.
Preferably, an organic electroluminescent device has a main emission peak in the visible range, i.e., from 380 to 800 nm, more preferably from 400 to 800 nm.
In one embodiment of the invention, the organic electroluminescent device emits green light from 500 to 560 nm. In one embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 500 to 560 nm. In one embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 500 to 560 nm.
In a preferred embodiment of the invention, the organic electroluminescent device emits green light from 510 to 550 nm. In a preferred embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 510 to 550 nm. In a preferred embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 510 to 550 nm.
In a particularly preferred embodiment of the invention, the organic electroluminescent device emits green light from 515 to 540 nm. In another particularly preferred embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 515 to 540 nm. In a particularly preferred embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 515 to 540 nm.
In one embodiment of the invention, the organic electroluminescent device emits blue light from 420 to 500 nm. In one embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 420 to 500 nm. In one embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 420 to 500 nm.
In a preferred embodiment of the invention, the organic electroluminescent device emits blue light from 440 to 480 nm. In a preferred embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 440 to 480 nm. In a preferred embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 440 to 480 nm.
In a particularly preferred embodiment of the invention, the organic electroluminescent device emits blue light from 450 to 470 nm. In a particularly preferred embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 450 to 470 nm. In a particularly preferred embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 450 to 470 nm.
In one embodiment of the invention, the organic electroluminescent device emits red or orange light from 590 to 690 nm. In one embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 590 to 690 nm. In one embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 590 to 690 nm.
In a preferred embodiment of the invention, the organic electroluminescent device emits red or orange light from 610 to 665 nm. In a preferred embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 610 to 665 nm. In a preferred embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 610 to 665 nm.
In a particularly preferred embodiment of the invention, the organic electroluminescent device emits red light from 620 to 640 nm. In one embodiment of the invention, the organic electroluminescent device has a main emission peak in the range of from 620 to 640 nm. In a particularly preferred embodiment of the invention, the organic electroluminescent device has an emission maximum of the main emission peak in the range of from 620 to 640 nm.
In a preferred embodiment of the invention, the organic electroluminescent device is a device selected from the group consisting of an organic light-emitting diode (OLED), a light-emitting electrochemical cell (LEC), and a light-emitting transistor.
Particularly preferably, the organic electroluminescent device is an organic light-emitting diode (OLED). Optionally, the organic electroluminescent device as a whole may be intransparent (non-transparent), semi-transparent or (essentially) transparent.
As used throughout the present application, the term “cyclic group” may be understood in the broadest sense as any mono-, bi- or polycyclic moieties.
As used throughout the present application, the terms “ring” and “ring system” may be understood in the broadest sense as any mono-, bi- or polycyclic moieties.
The term “ring atom” refers to any atom which is part of the cyclic core of a ring or a ring structure, and not part of a substituent optionally attached to it.
As used throughout the present application, the term “carbocycle” may be understood in the broadest sense as any cyclic group in which the cyclic core structure includes only carbon atoms that may of course be substituted with hydrogen or any other substituents defined in the specific embodiments of the invention. It is understood that the term “carbocyclic” as adjective refers to cyclic groups in which the cyclic core structure includes only carbon atoms that may of course be substituted with hydrogen or any other substituents defined in the specific embodiments of the invention. It is understood that the term “carbocycle” or a “carbocyclic ring system” may refer to both, an aliphatic and an aromatic cyclic group or ring system.
As used throughout the present application, the term “heterocycle” may be understood in the broadest sense as any cyclic group in which the cyclic core structure includes not just carbon atoms, but also at least one heteroatom. It is understood that the term “heterocyclic” as adjective refers to cyclic groups in which the cyclic core structure includes not just carbon atoms, but also at least one heteroatom. The heteroatoms may, unless stated otherwise in specific embodiments, at each occurrence be the same or different and be individually selected from the group consisting of N, O, S, and Se. All carbon atoms or heteroatoms included in a heterocycle in the context of the invention may of course be substituted with hydrogen or any other substituents defined in the specific embodiments of the invention. It is understood that the term “heterocycle” or a “heterocyclic ring system” may refer to both, an aliphatic and a heteroaromatic cyclic group or ring system.
As used throughout the present application, the term “aromatic ring system” may be understood in the broadest sense as any bi- or polycyclic aromatic moiety.
As used throughout the present application, the term “heteroaromatic ring system” may be understood in the broadest sense as any bi- or polycyclic heteroaromatic moiety.
As used throughout the present application, the term “fused” when referring to aromatic or heteroaromatic ring systems means that the aromatic or hetroaromatic rings that are “fused” share at least one bond that is part of both ring systems. For example naphthalene (or naphthyl when referred to as substituent) or benzothiophene (or benzothiophenyl when referred to as substituent) are considered fused aromatic ring systems in the context of the present invention, in which two benzene rings (for naphthalene) or a thiophene and a benzene (for benzothiophene) share one bond. It is also understood that sharing a bond in this context includes sharing the two atoms that build up the respective bond and that fused aromatic or heteroaromatic ring systems can be understood as one aromatic or heteroaromatic system. Additionally, it is understood, that more than one bond may be shared by the aromatic or heteroaromatic rings building up a fused aromatic or heteroaromatic ring system (e.g., in pyrene). Furthermore, it will be understood that aliphatic ring systems may also be fused and that this has the same meaning as for aromatic or heteroaromatic ring systems, with the exception of course, that fused aliphatic ring systems are not aromatic.
As used throughout the present application, the terms “aryl” and “aromatic” may be understood in the broadest sense as any mono-, bi- or polycyclic aromatic moieties. Herein, unless indicated differently in specific embodiments, an aryl group preferably contains 6 to 60 aromatic ring atoms, and a heteroaryl group preferably contains 5 to 60 aromatic ring atoms, of which at least one is a heteroatom. Notwithstanding, throughout the application the number of aromatic ring atoms (in particular of aromatic ring atoms that are carbon atoms) may be given as subscripted number in the definition of certain substituents. In particular, the heteroaromatic ring includes one to three heteroatoms. Again, the terms “heteroaryl” and “heteroaromatic” may be understood in the broadest sense as any mono-, bi- or polycyclic hetero-aromatic moieties that include at least one heteroatom. The heteroatoms may at each occurrence be the same or different and be individually selected from the group consisting of N, O, S, and Se. Accordingly, the term “arylene” refers to a divalent substituent that bears two binding sites to other molecular structures and thereby serving as a linker structure. In case, a group in the exemplary embodiments is defined differently from the definitions given here, for example, the number of aromatic ring atoms or number of heteroatoms differs from the given definition, the definition in the exemplary embodiments is to be applied. According to the invention, a condensed (annulated) aromatic or heteroaromatic polycycle is built of two or more single aromatic or heteroaromatic cycles, which formed the polycycle via a condensation reaction.
In particular, as used throughout the present application the term “aryl group” or “heteroaryl group” includes groups which can be bound via any position of the aromatic or heteroaromatic group, derived from benzene, naphthalene, anthracene, phenanthrene, pyrene, dihydropyrene, chrysene, perylene, fluoranthene, benzanthracene, benzophenanthrene, tetracene, pentacene, benzopyrene, furan, benzofuran, isobenzofuran, dibenzofuran, thiophene, benzothiophene, isobenzothiophene, dibenzothiophene; selenophene, benzoselenophene, isobenzoselenophene, dibenzoselenophene; pyrrole, indole, isoindole, carbazole, pyridine, quinoline, isoquinoline, acridine, phenanthridine, benzo-5,6-quinoline, benzo-6,7-quinoline, benzo-7,8-quinoline, phenothiazine, phenoxazine, pyrazole, indazole, imidazole, benzimidazole, naphthoimidazole, phenanthroimidazole, pyridoimidazole, pyrazinoimidazole, quinoxalinoimidazole, oxazole, benzoxazole, naphthooxazole, anthroxazole, phenanthroxazole, isoxazole, 1,2-thiazole, 1,3-thiazole, benzothiazole, pyridazine, benzopyridazine, pyrimidine, benzopyrimidine, 1,3,5-triazine, quinoxaline, pyrazine, phenazine, naphthyridine, carboline, benzocarboline, phenanthroline, 1,2,3-triazole, 1,2,4-triazole, benzotriazole, 1,2,3-oxadiazole, 1,2,4-oxadiazole, 1,2,5-oxadiazole, 1,2,3,4-tetrazine, purine, pteridine, indolizine and benzothiadiazole or combinations of the abovementioned groups.
In certain embodiments of the invention, adjacent substituents bonded to an aromatic or heteroaromatic ring may together form an additional mono- or polycyclic aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the aromatic or heteroaromatic ring to which the substituents are bonded. It is understood that the optionally so formed fused ring system will be larger (meaning it includes more ring atoms) than the aromatic or heteroaromatic ring to which the adjacent substituents are bonded. In these cases, the “total” amount of ring atoms included in the fused ring system is to be understood as the sum of ring atoms included in the aromatic or heteroaromatic ring to which the adjacent substituents are bonded and the ring atoms of the additional ring system formed by the adjacent substituents, wherein, however, the carbon atoms that are shared by the ring systems which are fused are counted once and not twice. For example, a benzene ring may have two adjacent substituents that form another benzene ring so that a naphthalene core is built. This naphthalene core then includes 10 ring atoms as two carbon atoms are shared by the two benzene rings and thus only counted once and not twice. The term “adjacent substituents” in this context refers to substituents attached to the same or to neighboring ring atoms (e.g., of a ring system).
As used throughout the present application, the term “aliphatic” when referring to ring systems may be understood in the broadest sense and means that none of the rings that build up the ring system is an aromatic or heteroaromatic ring. It is understood that such an aliphatic ring system may be fused to one or more aromatic or heteroaromatic rings so that some (but not all) carbon- or heteroatoms included in the core structure of the aliphatic ring system are part of an attached aromatic or heteroaromatic ring.
As used above and herein, the term “alkyl group” may be understood in the broadest sense as any linear, branched, or cyclic alkyl substituent. In particular, the term alkyl includes the substituents methyl (Me), ethyl (Et), n-propyl (ⁿPr), i-propyl (ⁱPr), cyclopropyl, n-butyl (ⁿBu), i-butyl (ⁱBu), s-butyl (^SBu), t-butyl (^tBu), cyclobutyl, 2-methylbutyl, n-pentyl, s-pentyl, t-pentyl, 2-pentyl, neo-pentyl, cyclopentyl, n-hexyl, s-hexyl, t-hexyl, 2-hexyl, 3-hexyl, neo-hexyl, cyclohexyl, 1-methylcyclopentyl, 2-methylpentyl, n-heptyl, 2-heptyl, 3-heptyl, 4-heptyl, cycloheptyl, 1-methylcyclohexyl, n-octyl, 2-ethylhexyl, cyclooctyl, 1-bicyclo[2,2,2]octyl, 2-bicyclo[2,2,2]-octyl, 2-(2,6-dimethyl)octyl, 3-(3,7-dimethyl)octyl, adamantyl, 2,2,2-trifluorethyl, 1,1-dimethyl-n-hex-1-yl, 1,1-dimethyl-n-hept-1-yl, 1,1-dimethyl-n-oct-1-yl, 1,1-dimethyl-n-dec-1-yl, 1,1-dimethyl-n-dodec-1-yl, 1,1-dimethyl-n-tetradec-1-yl, 1,1-dimethyl-n-hexadec-1-yl, 1,1-dimethyl-n-octadec-1-yl, 1,1-diethyl-n-hex-1-yl, 1,1-diethyl-n-hept-1-yl, 1,1-diethyl-n-oct-1-yl, 1,1-diethyl-n-dec-1-yl, 1,1-diethyl-n-dodec-1-yl, 1,1-diethyl-n-tetradec-1-yl, 1,1-diethyl-n-hexadec-1-yl, 1,1-diethyl-n-octadec-1-yl, 1-(n-propyl)-cyclohex-1-yl, 1-(n-butyl)-cyclohex-1-yl, 1-(n-hexyl)-cyclohex-1-yl, 1-(n-octyl)-cyclohex-1-yl and 1-(n-decyl)-cyclohex-1-yl.
As used above and herein, the term “alkenyl” includes linear, branched, and cyclic alkenyl substituents. The term alkenyl group exemplarily includes the substituents ethenyl, propenyl, butenyl, pentenyl, cyclopentenyl, hexenyl, cyclohexenyl, heptenyl, cycloheptenyl, octenyl, cyclooctenyl or cyclooctadienyl.
As used above and herein, the term “alkynyl” includes linear, branched, and cyclic alkynyl substituents. The term alkynyl group exemplarily includes ethynyl, propynyl, butynyl, pentynyl, hexynyl, heptynyl or octynyl.
As used above and herein, the term “alkoxy” includes linear, branched, and cyclic alkoxy substituents. The term alkoxy group exemplarily includes methoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, s-butoxy, t-butoxy and 2-methylbutoxy.
As used above and herein, the term “thioalkoxy” includes linear, branched, and cyclic thioalkoxy substituents, in which the O of the exemplarily alkoxy groups is replaced by S.
As used above and herein, the terms “halogen” and “halo” may be understood in the broadest sense as being preferably fluorine, chlorine, bromine or iodine.
All hydrogen atoms (H) included in any structure referred to herein may at each occurrence independently of each other, and without this being indicated specifically, be replaced by deuterium (D). The replacement of hydrogen by deuterium is common practice and obvious for the person skilled in the art who also knows how to achieve this synthetically.
It is understood that when a molecular fragment is described as being a substituent or otherwise attached to another moiety, its name may be written as if it were a fragment (e.g., naphthyl, dibenzofuryl) or as if it were the whole molecule (e.g., naphthalene, dibenzofuran). As used herein, these different ways of designating a substituent or attached fragment are considered to be equivalent.
When referring to concentrations or compositions and unless stated otherwise, percentages refer to weight percentages, which has the same meaning as percent by weight or % by weight ((weight/weight), (w/w), wt. %).
Orbital and excited state energies can be determined either by means of experimental methods or by calculations employing quantum-chemical methods, in particular density functional theory calculations. Herein, the energy of the highest occupied molecular orbital E^HOMOis determined by methods known to the person skilled in the art from cyclic voltammetry measurements with an accuracy of 0.1 eV.
The energy of the lowest unoccupied molecular orbital E^LUMOmay be determined by methods known to the person skilled in the art from cyclic voltammetry measurements with an accuracy of 0.1 eV. If E^LUMOmay be determined by cyclic voltammetry measurements, it will herein be denoted as E_CV ^LUMO. Alternatively, and herein preferably, E^LUMOis calculated as E^HOMO+E^gap, wherein the energy of the first excited singlet state S1 (vide infra) is used as E^gap, unless stated otherwise, for host materials H^B, TADF materials E^B, and small FWHM emitters S^B. This is to say that for host materials H^B, TADF materials E^B, and small FWHM emitters S^B, E^gapis determined from the onset of the emission spectrum at room temperature (i.e., approx. 20° C.) (steady-state spectrum; for TADF materials E^Ba spin-coated film of 10% by weight of E^Bin poly(methyl methacrylate), PMMA, is typically used; for small FWHM emitters S^Ba spin-coated film of 1-5%, preferably 2% by weight of S^Bin PMMA is typically used; for host materials H^Ba spin-coated neat film of the respective host material H^Bis typically used). For phosphorescence materials P^B, E^gapis also determined from the onset of the emission spectrum at room temperature (i.e., approx. 20° C.) (typically measured from a spin-coated film of 10% by weight of P^Bin PMMA).
Absorption spectra are recorded at room temperature (i.e., approximately 20° C.). For TADF materials E^B, absorption spectra are typically measured from a spin-coated film of 10% by weight of E^Bin poly(methyl methacrylate) (PMMA). For small FWHM emitters S^Babsorption spectra are typically measured from a spin-coated film of 1-5%, preferably 2% by weight of S^Bin PMMA. For host materials H^Babsorption spectra are typically measured from a spin-coated neat film of the host material H^B. For phosphorescence materials P^B, absorption spectra are typically measured from a spin-coated film of 10% by weight of P^Bin PMMA. Alternatively, absorption spectra may also be recorded from solutions of the respective molecules, for example in dichloromethane or toluene, wherein the concentration of the solution is typically chosen so that the maximum absorbance preferably is in a range of 0.1 to 0.5.
The onset of an absorption spectrum is determined by computing the intersection of the tangent to the absorption spectrum with the x-axis. The tangent to the absorption spectrum is set at the low-energy side of the absorption band and at the point at half maximum of the maximum intensity of the absorption spectrum.
Unless stated otherwise, the energy of the first (i.e., the lowermost) excited triplet state T1 is determined from the onset the phosphorescence spectrum at 77K (for TADF materials E^Ba spin-coated film of 10% by weight of E^Bin PMMA is typically used; for small FWHM emitters S^Ba spin-coated film of 1-5%, preferably 2% by weight of S^Bin PMMA is typically used; for host materials H^B, a spin-coated neat film of the respective host material H^Bis typically used; for phosphorescence materials P^Ba spin-coated film of 10% by weight of P^Bin PMMA is typically used and the measurement is typically performed at room temperature (i.e., approximately 20° C.). As laid out for instance in EP2690681A1, it is acknowledged that for TADF materials E^Bwith small ΔE_STvalues, intersystem crossing and reverse intersystem crossing may both occur even at low temperatures. In consequence, the emission spectrum at 77K may include emission from both, the S1 and the T1 state. However, as also described in EP2690681A1, the contribution/value of the triplet energy is typically considered dominant.
Unless stated otherwise, the energy of the first (i.e., the lowermost) excited singlet state S1 is determined from the onset the fluorescence spectrum at room temperature (i.e., approx. 20° C.) (steady-state spectrum; for TADF materials E^Ba spin-coated film of 10% by weight of E^Bin PMMA is typically used; for small FWHM emitters S^Ba spin-coated film of 1-5%, preferably 2% by weight of S^Bin PMMA is typically used; for host materials H^B, a spin-coated neat film of the respective host material H^Bis typically used; for phosphorescence materials P^Ba spin-coated film of 10% by weight of P^Bin PMMA is typically used). For phosphorescence materials P^Bdisplaying efficient intersystem crossing however, room temperature emission may be (mostly) phosphorescence and not fluorescence. In this case, the onset of the emission spectrum at room temperature (i.e., approx. 20° C.) is used to determine the energy of the first (i.e., the lowermost) excited triplet state T1 as stated above.
The onset of an emission spectrum is determined by computing the intersection of the tangent to the emission spectrum with the x-axis. The tangent to the emission spectrum is set at the high-energy side of the emission band and at the point at half maximum of the maximum intensity of the emission spectrum.
The ΔE_STvalue, which corresponds to the energy difference between the first (i.e., the lowermost) excited singlet state (S1) and the first (i.e., the lowermost) excited triplet state (T1), is determined based on the first (i.e., the lowermost) excited singlet state energy and the first (i.e., the lowermost) excited triplet state energy, which were determined as stated above.
As known to the skilled artisan, the full width at half maximum (FWHM) of an emitter (for example a small FWHM emitter S^B) is readily determined from the respective emission spectrum (fluorescence spectrum for fluorescent emitters and phosphorescence spectrum for phosphorescent emitters). For small FWHM emitters S^B, the fluorescence spectrum is typically used. All reported, FWHM values typically refer to the main emission peak (i.e., the peak with the highest intensity). The means of determining the FWHM (herein preferably reported in electron volts, eV) are part of the common knowledge of those skilled in the art. Given for example that the main emission peak of an emission spectrum reaches its half maximum emission (i.e., 50% of the maximum emission intensity) at the two wavelengths A₁and A₂, both obtained in nanometers (nm) from the emission spectrum, the FWHM in electron volts (eV) is commonly (and herein) determined using the following equation:
$F W H M [eV] = ❘ \frac{1239.84 [eV \cdot nm]}{λ_{2} [nm]} - \frac{1239.84 [eV \cdot nm]}{λ_{1} [nm]} ❘ .$
As used herein, if not defined more specifically in a particular context, the designation of the colors of emitted and/or absorbed light is as follows:

- violet: wavelength range of >380-420 nm;
- deep blue: wavelength range of >420-475 nm;
- sky blue: wavelength range of >475-500 nm;
- green: wavelength range of >500-560 nm;
- yellow: wavelength range of >560-580 nm;
- orange: wavelength range of >580-620 nm;
- red: wavelength range of >620-800 nm.

The invention is illustrated by the following examples and the claims.

DESCRIPTION OF FIGURES

FIG. 1 gives a schematic layer structure of exemplary organic electroluminescent devices (in accordance with the setup 1 given in table 2, vide infra) as well as a close up view on the light-emitting layer (EML). Herein, the layers have the following meaning: S: glass substrate, 1: anode (layer), 2: hole injection layer (HIL), 3: hole transport layer 1 (HTL-1), 4: hole transport layer 2 (HTL-2), 5: electron blocking layer (EBL), 6: light-emitting layer (EML), which is optionally divided in sublayers, 7: hole blocking layer (HBL), 8: electron transport layer (ETL), 9: electron injection layer (EIL), and 10: cathode (layer). A light-emitting layer (EML) may include an imaginary boundary surface S^EMLdividing the EML in halves of equal volume. It is shown how the EML may be imaginarily divides in halves of equal volume by an imaginary boundary surface S^EMLto assess the distribution of the recombination zone over the imaginarily so-formed halves of the EML (see above).

EXAMPLES

Cyclic Voltammetry
Cyclic voltammograms of solutions having concentration of 10⁻³mol/l of the organic molecules in dichloromethane or a suitable solvent and a suitable supporting electrolyte (e.g., 0.1 mol/l of tetrabutylammonium hexafluorophosphate) are measured. The measurements are conducted at room temperature (i.e., (approximately) 20° C.) and under nitrogen atmosphere with a three-electrode assembly (working and counter electrodes: Pt wire, reference electrode: Pt wire) and calibrated using FeCp₂/FeCp₂* as internal standard. HOMO and LUMO data was corrected using ferrocene as internal standard against SCE.
Density Functional Theory Calculation
Molecular structures are optimized employing the BP86 functional and the resolution of identity approach (RI). Excitation energies are calculated using the (BP86) optimized structures employing Time-Dependent DFT (TD-DFT) methods. Orbital and excited state energies are calculated with the B3LYP functional. Def2-SVP basis sets and an m4-grid for numerical integration were used. The Turbomole program package was used for all calculations. However, herein, orbital and excited state energies are preferably determined experimentally as stated above. All orbital and excited state energies reported herein (see experimental results) have been determined experimentally.
Photophysical Measurements
Sample Pretreatment: Vacuum-Evaporation
As stated before, photophysical measurements of individual compounds (for example organic molecules or transition metal complexes) that may be included in a light-emitting layer B of the organic electroluminescent device according to the present invention (for example, host materials H^B, TADF materials E^B, phosphorescence materials P^Bor small FWHM emitters S^B) were typically performed using either spin-coated neat films (in case of host materials H^B) or spin-coated films of the respective material in poly(methyl methacrylate) (PMMA) (e.g., for TADF materials E^Bphosphorescent materials P^B, and small FWHM emitters S^B). These films were spin coated films and, unless stated differently for specific measurements, the concentration of the materials in the PMMA-films was 10% by weight for TADF materials E^Band for phosphorescent materials P^Bor 1-5%, preferably 2% by weight for small FWHM emitters S^B. Alternatively (not preferred), and as stated previously, some photophysical measurements may also be performed from solutions of the respective molecules, for example in dichloromethane or toluene, wherein the concentration of the solution is typically chosen so that the maximum absorbance preferably is in a range of 0.1 to 0.5.
Apparatus: Spin150, Sps Euro.
The sample concentration was 1.0 mg/ml, typically dissolved in Toluene/DCM as suitable solvent.
Program: 7-30 sec. at 2000 U/min. After coating, the films were dried at 70° C. for 1 min.
For the purpose of further studying compositions of certain materials as present in the EML of organic electroluminescent devices (according to the present invention or comparative), the samples for photophysical measurements were produced from the same materials used for device fabrication by vacuum deposition of 50 nm of the respective light-emitting layer B on quartz substrates. Photophysical characterization of the samples are conducted under nitrogen atmosphere.
Absorption Measurements
A Thermo Scientific Evolution 201 UV-Visible Spectrophotometer is used to determine the wavelength of the absorption maximum of the sample in the wavelength region above 270 nm. This wavelength is used as excitation wavelength for photoluminescence spectral and quantum yield measurements.
Photoluminescence Spectra
Steady-state emission spectra are recorded using a Horiba Scientific, Modell FluoroMax-4 equipped with a 150 W Xenon-Arc lamp, excitation- and emissions monochromators. The samples are placed in a cuvette and flushed with nitrogen during the measurements.
Photoluminescence Quantum Yield Measurements
For photoluminescence quantum yield (PLQY) measurements an integrating sphere, the Absolute PL Quantum Yield Measurement C9920-03G system (Hamamatsu Photonics) is used. The samples are kept under nitrogen atmosphere throughout the measurement. Quantum yields are determined using the software U6039-05 and given in %. The yield is calculated using the equation:
$Φ_{PL} = \frac{n_{photon}, emited}{n_{photon}, absorbed} = \frac{\int \frac{λ}{hc} [{Int}_{emitted}^{sample} (λ) - {Int}_{absorbed}^{sample} (λ)] d λ}{\int \frac{λ}{hc} [{Int}_{emitted}^{reference} (λ) - {Int}_{absorbed}^{reference} (λ)] d λ}$

- wherein n_photondenotes the photon count and Int. is the intensity. For quality assurance, anthracene in ethanol (known concentration) is used as reference.

TCSPC (Time-Correlated Single-Photon Counting)
Unless stated otherwise in the context of certain embodiments or analyses, excited state population dynamics are determined employing Edinburgh Instruments FS5 Spectrofluoremeters, equipped with an emission monochromator, a temperature stabilized photomultiplier as detector unit and a pulsed LED (310 nm central wavelength, 910 μs pulse width) as excitation source. The samples are placed in a cuvette and flushed with nitrogen during the measurements.
To determine the average decay time f of a measured transient photoluminescence signal, the data is fitted with a sum pf n exponential functions:
$\sum_{i = 1}^{n} A_{i} \exp (- \frac{t}{t_{i}})$

- wherein n is an integer between 1 and 3. By weighting the specific decay time constants τ_iwith the corresponding amplitudes A_i, the excited state lifetime τ is determined:

$\overline{τ} = \frac{\sum_{i = 1}^{n} A_{i} τ_{i}}{\sum_{i = 1}^{n} A_{i}}$
The method may be applied for fluorescence and phosphorescence materials to determine the excited state lifetimes. For TADF materials, the full decay dynamics as described below need to be gathered.
Full Decay Dynamics
The full excited state population decay dynamics over several orders of magnitude in time and signal intensity is achieved by carrying out TCSPC measurements in 4 time windows: 200 ns, 1 μs, and 20 μs, and a longer measurement spanning>80 μs. The measured time curves are then processed in the following way:

- A background correction is applied by determining the average signal level before excitation and subtracting.
- The time axes are aligned by taking the initial rise of the main signal as reference.
- The curves are scaled onto each other using overlapping measurement time regions.
- The processed curves are merged to one curve.

Data analysis is done using mono-exponential or bi-exponential fitting of fluorescence (PF) and delayed fluorescence (DF) decays separately. By weighting the specific decay time constants τ_ifrom the fits with the corresponding amplitudes A_i, the average lifetime τ for the prompt (i.e., the prompt fluorescence lifetime) and the delayed-fluorescence (i.e., the delayed fluorescence lifetime), respectively, may be determined as follows:
$\overline{τ} = \frac{\sum_{i = 1}^{n} A_{i} τ_{i}}{\sum_{i = 1}^{n} A_{i}}$

- wherein n is either 1 or 2.

The ratio of delayed and prompt fluorescence (n-value) is calculated by the integration of respective photolumirvescence decays in time.
$\frac{\int I_{DF} (t) dt}{\int I_{PF} (t) dt} = n$
Transient photoluminescence measurements with spectral resolution
In transient photoluminescence (PL) measurements with spectral resolution, PL spectra at defined delay times after pulsed optical excitation are recorded.
An exemplary device for measureing transient PL spectra includes:

- a pulsed laser (eMOPA, CryLas) with a central wavelength of 355 nm and a pulse width of 1 ns to excite the sample.
- a sample chamber configured to house a sample that can be either evacuated or flushed with nitrogen.
- a spectrograph (SpectraPro HRS) to disperse light emitted from the sample.
- a CCD camera (Princeton Instruments PI-MAX4) for wavelength resolved detection of the dispersed emitted light, with integrated timing generator for synchronization with the pulsed laser.
- a personal computer configured to analyze the signal fom the CCD camera imported therinto.

In the course of the measurement, the sample is placed in the sample chamber and irradiated with the pulsed laser. Emitted light from the sample is taken in a 90 degree direction with respect to the irradiation direction of the laser pulses. It is dispersed by the spectrograph and directed onto the detector (the CCD camera in the exemplary device), thus obtaining a wavelength resolved emission spectrum. The time delay between laser irradiation and detection, and the duration (i.e., the gate time) of detection are controlled by the timing generator.
It should be noted, that transient photoluminescence may be measured by a device different from the one described in the exemplary device.
Production and Characterization of Organic Electroluminescence Devices
Via vacuum-deposition methods OLED devices including organic molecules according to the invention can be produced. If a layer contains more than one compound, the weight-percentage of one or more compounds is given in %. The total weight-percentage values amount to 100%, thus if a value is not given, the fraction of this compound equals to the difference between the given values and 100%.
The not fully optimized OLEDs are characterized using standard methods and measuring electroluminescence spectra, the external quantum efficiency (in %) in dependency on the intensity, calculated using the light detected by the photodiode, and the current. The FWHM of the devices is determined from the electroluminescence spectra as stated previously for photoluminescence spectra (fluorescence or phosphorescence). The reported FWHM refers to the main emission peak (i.e., the peak with the highest emission intensity). The OLED device lifetime is extracted from the change of the luminance during operation at constant current density. The LT50 value corresponds to the time, where the measured luminance decreased to 50% of the initial luminance, analogously LT80 corresponds to the time point, at which the measured luminance decreased to 80% of the initial luminance, LT97 to the time point, at which the measured luminance decreased to 97% of the initial luminance etc.
Accelerated lifetime measurements are performed (e.g., applying increased current densities). Exemplarily LT80 values at 500 cd/m²are determined using the following equation:
$LT 80 (500 \frac{{cd}^{2}}{m^{2}}) = LT 80 (L_{0}) {(\frac{L_{0}}{500 \frac{{cd}^{2}}{m^{2}}})}^{1.6}$

- wherein Lo denotes the initial luminance at the applied current density. The values correspond to the average of several pixels (typically two to eight).

Experimental Results
Stack Materials
TTA Materials

TABLE 1TTA

Properties of the TTA materials.

	Example	E^HOMO	E^LUMO	E(S1)	E(T1)
	compound	[eV]	[eV]	[eV]	[eV]

TTA	TTA1¹	−5.89	−2.63	3.16

¹measured in neat film.

Host Materials H^B

TABLE 1H

Properties of the host materials.

Example	E^HOMO	E^LUMO	E(S1)	E(T1)
compound	[eV]	[eV]	[eV]	[eV]

H^B	HBM1		−2.91		2.94
	EBM1	−5.54	−2.46	3.08	2.36
	mCBP	−6.02	−2.42	3.6	2.82
	PYD2	−6.08	−2.55	3.53	2.81
	H^B-3	−5.66	−2.35	3.31	2.71
	H^B-4	−5.85	−2.43	3.42	2.84
	H^B-5	−5.91	−2.89	2.79
	H^B-6	−5.94	−2.93	3.01	2.78
	H^B-7			3.27	2.71
	H^B-8			2.94	2.70
	H^B-9	−5.97	−3.10	2.88	2.77
	H^B-10			3.15	2.75
	H^B-11	−6.04	−3.10	2.94	2.86
	H^B-12	−6.23	−3.02	3.21	2.76
	H^B-13	−6.23	−3.12	3.21	2.76
	H^B-14	−5.99	−2.48	3.51	2.97
	H^B-15	−5.64	−2.36	3.28	2.70
	H^B-16	−5.68	−2.55	3.13	2.81

TADF materials E^Bthat may be selected as excitation energy transfer component EET-1 or excitation energy transfer component EET-2

TABLE 1E

Properties of the TADF materials E^B.

	Example
	com-	E^HOMO	E^LUMO	E(S1)	E(T1)	λ_max ^PMMA	FWHM	PLQY
	pound	[eV]	[eV]	[eV]	[eV]	[nm]	[eV]	[%]

E^B	E^B-1	−5.97	−3.28	2.69	2.63	518	0.43	61
	E^B-2	−5.97	−3.31	2.66	2.72	526	0.43	43
	E^B-3	−5.92	−3.25	2.67	2.65	517	0.40	73
	E^B-4	−6.00	−3.37	2.63	2.65	525	0.40	54
	E^B-5	−5.95	−3.27	2.68	2.64	508	0.41	72
	E^B-6	−5.94	−3.24	2.70	2.64	509	0.41	74
	E^B-7	−5.94	−3.24	2.70	2.66	509	0.41	71
	E^B-8	−5.93	−3.33	2.60	2.59	525	0.39	71
	E^B-9	−5.89	−3.15	2.74	2.64	498	0.40	81
	E^B-10	−5.99	−3.34	2.65	2.65	520	0.42	54
	E^B-11	−5.79	−3.15	2.77	2.81	514	0.50	63
	E^B-12	−6.07	−3.19	2.88	2.80	477	0.42	83
	E^B-13	−6.15	−3.13	3.02	2.79	454	0.44	72
	E^B-14	−6.03	−3.01	3.02	2.97	459	0.45	72
	E^B-15	−5.79	−3.02	2.77	2.82	511	0.49	64
	E^B-16	−5.71	−3.07	2.64	2.59	517	0.38	68
	E^B-17	−5.79	−3.02	2.77	2.77	523	0.51	49
	E^B-18	−5.80	−3.04	2.76		522	0.52	52
	E^B-19	−5.80	−3.14	2.67		540	0.50	38
	E^B-20	−5.71	−3.06	2.65	2.60	510	0.37	69
	E^B-21	−5.79	−2.96	2.84	2.88	502	0.51	66
	E^B-22	−5.97	−2.94	2.92	2.87	473	0.44	79
	E^B-23	−6.05	−3.17	2.88	2.81	478	0.43	79
	E^B-24	−5.92	−3.00	2.92	2.87	475	0.44	79

Phosphorescence materials P^Bthat may be selected as excitation energy transfer component EET-1 or excitation energy transfer component EET-2

TABLE 1P

Properties of the materials.

	Example
	com-	E^HOMO	E_CV ^LUMO	E^LUMO	E(S1)	E(T1)	λ_max ^PMMA	FWHM
	pound	[eV]	[eV]	[eV]	[eV]	[eV]	[nm]	[eV]

P^B	Ir(ppy)₃	−5.36				2.56^a	509	0.38
	P^B-2	−5.33	−2.32			2.57^b	522	0.34
	P^B-3	−5.80	−2.67			2.88^c	482	0.40
	P^B-4	−5.24

- wherein E_CV ^LUMOis the energy of the lowest unoccupied molecular orbital, which is determined by cyclic voltammetry.^aThe emission spectrum was recorded from a solution of Ir(ppy)₃in chloroform. ^bThe emission spectrum was recorded from a 0.001 mg/mL solution of P^B-2 in dichloromethane. ^cThe emission spectrum was recorded from a 0.001 mg/mL solution of P^B-3 in toluene.

Small FWHM Emitters S^B

TABLE 1S

Properties of the Small FWHM emitters S^B.

	Example	E^HOMO	E^LUMO	E(S1)	E(T1)	λ_max ^PMMA	FWHM
	compound	[eV]	[eV]	[eV]	[eV]	[nm]	[eV]

S^B	S^B-1	−5.54	−3.10	2.44	2.12	538	0.21
	S^B-2	−5.53	−3.04	2.49	2.26	525	0.18
	S^B-3	−5.55	−3.05	2.50	2.22	520	0.18
	S^B-4	−5.48	−3.05	2.43	2.25	537	0.17
	S^B-5	−5.47	−3.01	2.46	2.58	527	0.15
	S^B-6	−5.56	−3.03	2.53	2.19	518	0.22
	S^B-7	−5.48	−2.97	2.53	2.23	521	0.25
	S^B-8*	−5.86	−3.40	2.46		517	0.10
	S^B-9	−5.47	−.2.66	2.81		460	0.14
	S^B-10	−5.46	−2.65	2.81		459	0.15
	S^B-11	−5.33	−2.51	2.82		458	0.16
	S^B-12	−5.49	−2.63	2.86		451	0.14
	S^B-13			2.79		464	0.24
	S^B-14	−5.31	−2.50	2.81	2.61	459	0.16
	S^B-15	−5.40	−2.66	2.74		468	0.12

*measured in DCM (0.01 mg/ml; such a solution was used for photophysical measurements).

TABLE 2

Setup 1 of exemplary organic electroluminescent devices (OLEDs).

Layer	Thickness	Material

10	100 nm	Al
9	2 nm	Liq
8	20 nm	NBPhen
7	10 nm	HBM1
6	50 nm	H^B:
		EET-1:
		EET-2:
		S ^B
5	10 nm	H	^P
4	10 nm	TCTA
3	50 nm	NPB
2	5 nm	HAT-CN
1	50 nm	ITO
substrate		glass

In order to evaluate the results of the invention, comparison experiments were performed, wherein solely the composition of the emission layer (6) was varied. Additionally, the ratio of EET-1 and S^Bwas kept constant in the comparison experiments.
Results I: Variation of the content of the excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B) in the light-emitting layer (emission layer, 6)
Composition of the light-emitting layer B of devices D1 to D4 (the percentages refer to weight percent:


Layer	D1	D2	D3	D4

Emission	H^B(79%):	H^B(78%):	H^B(75%):	H^B(69%):
layer	EET-1	EET-1	EET-1	EET-1
(6)	(20%):	(20%):	(20%):	(20%):
	EET-2	EET-2	EET-2	EET-2
	(0%):	(1%):	(4%):	(10%):
	S^B(1%)	S^B(1%)	S^B(1%)	S^B(1%)

Setup 1 from Table 2 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), E^B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and S^B-I was used as the small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results I


							Relative
						EQE at	lifetime
					Voltage at	1000	LT95 at
	FWHM	λ_max			10 mA/cm²	cd/m²	1200
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	cd/m²

D1	0.17	530	0.31	0.64	5.53	21.0	1.00
D2	0.18	532	0.32	0.64	6.64	21.2	2.47
D3	0.20	532	0.34	0.62	7.41	18.1	1.21
D4	0.24	532	0.37	0.60	6.96	13.1	0.99

Comparing the device results, D1 and D2, similar optical properties (FWHM, □_max, CIEx and CIEy) and efficiency (EQE) can be observed, while for D2 an extension of the relative lifetime of 147% compared to D1 (from 1.00 to 2.47) can be observed. For D3 extension of the relative lifetime of 21% compared to D1 (from 1.00 to 1.21), while the relative lifetime of D4 decreased by 1% compared to D1 (from 1.00 to 0.99).
Results II: Variation of Composition of Components
Composition of the light-emitting layer B of devices D5 to D13 (the percentages refer to weight percent);


Layer	D5	D6	D7	D8

Emission	H^B(79%):	H^B(76%):	H^B(78%):	H^B(75%):
layer	H^N(20%):	H^N(20%):	H^N(20%):	H^N(20%):
(6)	EET-2	EET-2	EET-2	EET-2
	(1%):	(4%):	(1%):	(4%):
	S^B(0%)	S^B(0%)	S^B(1%)	S^B(1%)

Layer	D9	D10

Emission	H^B	H^B
layer	(79.5%):	(78.5%):
(6)	EET-1	EET-1
	(20%):	(20%):
	EET-2	EET-2
	(0%):	(1%):
	S^B(0.5%)	S^B(0.5%)

Setup 1 from Table 2 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), H^B-5 was used as host material H^N, E^B-11 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer material EET-2 (here exemplarily a phosphorescence material P^B), and S^B-I was used as the small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.
Devices D5 and D6 are typical phosphorescence devices, which include a mixed-host system, i.e., H^Band H^N, and a phosphorescence emitter.
Device D7 and D8 are devices, which include a mixed-host system, i.e., H^Band H^N, a phosphorescence material and a small FWHM emitter S^B.
Device D9 is a device, which includes a host H^B, a TADF material E^Band a small FWHM emitter S^B.
Device D10 is a device, which includes a Host H^B, an excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), an excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and a small FWHM emitter S^B.

Device Results II


							Relative
						EQE at	lifetime
					Voltage at	1000	LT95 at
	FWHM	λ_max			10 mA/cm²	cd/m²	1200
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	cd/m²

D5	0.31	512	0.30	0.62	6.11	19.5	1.00
D6	0.31	514	0.30	0.63	5.77	21.7	1.89
D7	0.17	534	0.33	0.64	6.33	19.9	2.05
D8	0.17	534	0.33	0.64	6.19	22.9	3.50
D9	0.17	532	0.31	0.63	5.86	20.6	1.30
D10	0.18	532	0.32	0.64	6.74	24.9	13.34

Comparing the composition of the emission layer of devices D5 and D6 to D7 and D8, D7 and D8 contain additionally a small FWHM emitter S^B, which is not present in D5 and D6. A longer lifetime, similar efficiency and smaller FWHM of the emission can be observed for D7 and D8.
Device D10 according to the present invention shows a superior overall performance over D-9 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃).
Composition of the light-emitting layer B of devices D14 to D21 (the percentages refer to weight percent):


Layer	D14	D15	D16	D17	D18

Emission	H^B(80%):	H^B(79%):	H^B(79%):	H^B(78%):	H^B(79%):
layer (6)	H^N(0%):	H^N(20%):	H^N(0%):	H^N(20%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(0%):	(20%):	(0%):	(20%):
	EET-2	EET-2	EET-2	EET-2	EET-2
	(0%):	(1%):	(0%):	(1%):	(1%):
	S^B(0%)	S^B(0%)	S^B(1%)	S^B(1%)	S^B(0%)

Layer	D19	D20	D21

Emission	H^B(78%):	H^B(75%):	H^B(72%):
layer (6)	H^N(0%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1
	(20%):	(20%):	(20%):
	EET-2	EET-2	EET-2
	(1%):	(4%):	(7%):
	S^B(1%)	S^B(1%)	S^B(1%)

Setup 1 from Table 2 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), H^B-5 was used as host material H^N, E^B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), P^B-2. was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results III


							Relative
						EQE at	lifetime
					Voltage at	1000	LT95 at
	FWHM	λ	_max			10 mA/cm²	cd/m²	1200
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	cd/m²

D14	0.35	522	0.32	0.60	4.76	16.4	1.00
D15	0.29	516	0.30	0.63	6.49	22.7	0.29
D16	0.16	532	0.32	0.65	5.85	20.4	2.76
D17	0.17	532	0.31	0.65	6.60	22.4	0.52
D18	0.36	525	0.36	0.59	7.02	15.7	2.17
D19	0.17	532	0.33	0.64	7.28	20.4	4.75
D20	0.20	532	0.35	0.62	7.85	16.3	2.42
D21	0.20	534	0.36	0.61	7.26	13.6	2.57

As can be concluded from device results III, the absence of the small FWHM emitter S^B(here exemplarily S^B-1) results in an undesirably broad emission reflected by the FWHM values being significantly larger than 0.25 eV in all cases (see devices D14, D15, and D18). For D15, the very high EQE of 22.7% comes along with a significantly reduced lifetime. When using a small FWHM emitter S^B(here exemplarily S^B-1) alongside a single excitation energy transfer component (either a TADF material E^B(here exemplarily E^B-10) or a phosphorescence material P^B(here exemplarily P^B-2)), a narrow emission can be achieved, which is then reflected by the FWHM values being significantly smaller than 0.25 eV (see devices D16 and D17). At the same time, these devices exhibit high EQE-values of 20.4% and 22.4%, respectively. However, in terms of lifetime, all of these devices are clearly outcompeted by device D19, which was prepared according to the present invention. D19 also exhibits a very good efficiency (EQE of 20.4%) and a narrow emission (FWHM of 0.17 eV). In summary, the skilled artisan will acknowledge that D19 (according to the present invention) clearly shows the best overall device performance. The EML of D19 includes 1% of the excitation energy transfer component EET-2 (here a phosphorescence material P^B). Increasing this value to 4% (in D20) or even to 7% (in D21) results in a somewhat poorer device performance reflected by a slight increase of the FWHM to 0.20 eV, a reduction of the EQE to 16.3% or 13.6%, respectively, and a reduction of the device lifetime. Nevertheless, D20 and D21 still display a good overall performance, in particular with regard to the device lifetime.
In the absence of the excitation energy transfer component EET-1 (here exemplarily TADF material E^B-10), an n-host (here exemplarily H^B-5) was generally used to increase the electron mobility within the EML.
Composition of the light-emitting layer B of devices D22 to D29 (the percentages refer to weight percent):


Layer	D22	D23	D24	D25	D26

Emission	H^B(80%):	H^B(79%):	H^B(78%):	H^B(78%):	H^B(78%):
layer (6)	H^N(0%):	H^N(20%):	H^N(20%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(0%):	(0%):	(20%):	(20%):
	EET-2	EET-2	EET-2	EET-2	EET-2
	(0%):	(1%):	(1%):	(1%):	(1%):
	S^B(0%)	S^B(0%)	S^B(1%)	S^B(1%)	S^B(0.5%)

Layer	D27	D28	D29

Emission	H^B(79.5%):	H^B(75%):	H^B(75.5%):
layer (6)	H^N(0%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1
	(20%):	(20%):	(20%):
	EET-2	EET-2	EET-2
	(0%):	(4%):	(4%):
	S^B(0.5%)	S^B(1%)	S^B(0.5%)

Setup 1 from Table 2 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), H^B-5 was used as host material H^N, E^B-11 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results IV


							Relative
						EQE at	lifetime
					Voltage at	1000	LT95 at
	FWHM	λ	_max			10 mA/cm²	cd/m²	1200
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	cd/m²

D22	0.41	518	0.29	0.55	4.93	22.5	1.00
D23	0.31	512	0.30	0.62	6.11	19.5	1.10
D24	0.17	534	0.33	0.64	6.33	19.9	2.26
D25	0.17	534	0.32	0.64	6.30	22.5	11.89
D26	0.18	532	0.32	0.64	6.74	24.9	14.72
D27	0.17	532	0.31	0.63	5.86	20.6	1.44
D28	0.16	534	0.33	0.64	5.94	21.6	8.95
D29	0.18	532	0.32	0.64	6.75	22.6	11.40

As can be concluded from device results IV, using the TADF material E^B(here exemplarily E^B-11) or the phosphorescence material P^B(here exemplarily Ir(ppy)₃) as the main emitter in the absence of a small FWHM emitter S^Bresults in a relatively broad emission of the organic electroluminescent device, which is reflected by FWHM values of the main emission peak of clearly more than 0.25 eV (here 0.41 and 0.31 eV, respectively, see D22 and D23). Both, D22 and D23, exhibit high efficiencies (EQE of 22.5% and 19.5%, respectively). The addition of a small FWHM emitter S^B(here exemplarily S^B-1) to for example the phosphorescent OLED D23 results in a significantly reduced FWHM of the main emission peak (then 0.17 eV) while slightly improving the EQE and the lifetime (see D24). However, device D24 as well as the OLEDs D22 and D23 are strongly outperformed by device D25, which was prepared according to the present invention. As compared to D22, D23, and D24, device D25 exhibits a dramatically prolonged lifetime, while still displaying an equally high efficiency and a narrow FWHM. The skilled artisan will acknowledge that the overall performance of device D25 according to the present invention is clearly superior to the performance of D22, D23, and D24. The overall device performance could be improved even further by reducing the content of the small FWHM emitter S^B(here exemplarily S^B-1) from 1% (in the EML of D25) to 0.5% (in the EML of D26). Again, a comparative example D27, not fulfilling the conditions of the present invention (exemplarily lacking the EET-2, here a phosphorescence material P^B) showed a drastically reduced lifetime and a somewhat reduced efficiency (EQE). Increasing the content of the excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B, Ir(ppy)₃) from 1% in the devices D25 and D26 according to the present invention to 4% (in devices D28 and D29 according to the present invention) led to a reduction of the device lifetime and the efficiency. However, these devices (D28 and D29) still clearly outperform the aforementioned comparative devices which were manufactured according to the state of the art and not according to the present invention. In the absence of the excitation energy transfer component EET-1 (here exemplarily the TADF material E^B-11), an n-host (here exemplarily H^B-5) was generally used to increase the electron mobility within the EML.

TABLE 3

Setup 2 of exemplary organic electroluminescent devices (OLEDs).

Layer	Thickness	Material

10	100 nm	Al
9	2 nm	Liq
8	20 nm	NBPhen
7	10 nm	HBM1
6	50 nm	H^B:
		EET-1:
		EET-2:
		S ^B
5	10 nm	H	^P
4	10 nm	TCTA
3	40 nm	NPB
2	5 nm	HAT-CN
1	50 nm	ITO
substrate		glass

- Composition of the light-emitting layer B of devices D30 to D32 (the percentages refer to weight percent):


Layer	D30	D31	D32

Emission	H^B(79%):	H^B(76%):	H^B(75%):
layer	EET-1	EET-1	EET-1
(6)	(20%):	(20%):	(20%):
	EET-2	EET-2	EET-2 (4%):
	(0%):	(4%):	S^B(1%)
	S^B(1%)	S^B(0%)

Setup 2 from Table 3 was used, wherein H^B-1 (mCBP) was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), E^B-14 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), P^B-3 was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B) and S^B-14 was used as small FWHM emitter S^B

Device Results V


							Relative
						EQE at	lifetime
					Voltage at	1000	LT95 at
	FWHM	λ	_max			10 mA/cm²	cd/m²	1200
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	cd/m²

D30	0.17	462	0.14	0.15	6.07	15.8	1.00
D31	0.33	474	0.14	0.23	5.61	16.8	2.50
D32	0.19	462	0.14	0.16	6.03	19.4	1.75

Among the organic electroluminescent devices D30-D32, D32 according to the present invention shows the best overall performance when taking the narrow emission (small FWHM), the high EQE, and the relative lifetime into account.
Composition of the light-emitting layer B of devices D33 to D35 (the percentages refer to weight percent):


Layer	D33	D34	D35

Emission	H^P(79%):	H^P(79%):	H^P(78%):
layer	EET-1	EET-1	EET-1
(6)	(20%):	(20%):	(20%):
	EET-2	EET-2	EET-2
	(0%):	(1%):	(1%):
	S^B(1%)	S^B(0%)	S^B(1%)

Setup 2 from Table 3 was used, wherein H^B-14 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), E^B-14 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B) P^B-3 was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and S^B-14 was used as small FWHM emitter S^B.

Device Results VI


							Relative
						EQE at	lifetime
					Voltage at	1000	LT95 at
	FWHM	λ	_max			10 mA/cm²	cd/m²	1200
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	cd/m²

D33	0.17	462	0.14	0.15	5.26	17.2	1.00
D34	0.35	474	0.15	0.25	6.07	13.5	0.75
D35	0.18	462	0.14	0.15	5.89	18.1	1.50

Among the organic electroluminescent devices D33-D35, D35 according to the present invention clearly shows the best overall performance when taking the narrow emission (small FWHM), the high EQE, and the relative lifetime into account.
As stated before, each light-emitting layer B according to the present invention may be a single layer or may be composed of two or more sublayers. Exemplary organic electroluminescent devices with a light-emitting layer B including two or more sublayers are shown below (see device results VII and VIII).

TABLE 4

Setup 3 of exemplary organic electroluminescent devices (OLEDs).

Layer	Thickness	Sublayers	Material

10	100 nm	single layer	Al
9	2 nm	single layer	Liq
8	20 nm	single layer	NBPhen
7	10 nm	single layer	HBM1
6	2 nm	sublayer 11	H^B:
	8 nm	sublayer	10	EET-1:
	2 nm	sublayer	9	EET-2:
	8 nm	sublayer 8	S ^B
	2 nm	sublayer 7
	8 nm	sublayer	6
	2 nm	sublayer	5
	8 nm	sublayer	4
	2 nm	sublayer	3
	8 nm	sublayer	2
	2 nm	sublayer	1
5	10 nm	single layer	H	^P
4	10 nm	single layer	TCTA
3	50 nm	single layer	NPB
2	5 nm	single layer	HAT-CN
1	50 nm	single layer	ITO
substrate			glass

Composition of the light-emitting layer B of devices D36 to D38 (the percentages refer to weight percent):


Layer	Sublayer	D36	D37	D38

Emission	11	H^B(79%):	H^B(79%):	H^B(79%):
layer		H^N(20%):	H^N(20%):	H^N(20%):
(6)		S^B(1%)	S^B(1%)	S^B(1%)
	10	H^B(79%):	H^B(80%):	H^B(79%):
		H^N(20%):	EET-1	EET-1
		EET-2 (1%)	(20%):	(20%):
				EET-2 (1%)
	9	H^B(79%):	H^B(79%):	H^B(79%):
		H^N(20%):	H^N(20%):	H^N(20%):
		S^B(1%)	S^B(1%)	S^B(1%)
	8	H^B(79%):	H^B(80%):	H^B(79%):
		H^N(20%):	EET-1	EET-1
		EET-2 (1%)	(20%):	(20%):
				EET-2 (1%)
	7	H^B(79%):	H^B(79%):	H^B(79%):
		H^N(20%):	H^N(20%):	H^N(20%):
		S^B(1%)	S^B(1%)	S^B(1%)
	6	H^B(79%):	H^B(80%):	H^B(79%):
		H^N(20%):	EET-1	EET-1
		EET-2 (1%)	(20%):	(20%):
				EET-2 (1%)
	5	H^B(79%):	H^B(79%):	H^B(79%):
		H^N(20%):	H^N(20%):	H^N(20%):
		S^B(1%)	S^B(1%)	S^B(1%)
	4	H^B(79%):	H^B(80%):	H^B(79%):
		H^N(20%):	EET-1	EET-1
		EET-2 (1%)	(20%):	(20%):
				EET-2 (1%)
	3	H^B(79%):	H^B(79%):	H^B(79%):
		H^N(20%):	H^N(20%):	H^N(20%):
		S^B(1%)	S^B(1%)	S^B(1%)
	2	H^B(79%):	H^B(80%):	H^B(79%):
		H^N(20%):	EET-1	EET-1
		EET-2 (1%)	(20%):	(20%):
				EET-2 (1%)
	1	H^B(79%):	H^B(79%):	H^B(79%):
		H^N(20%):	H^N(20%):	H^N(20%):
		S^B(1%)	S^B(1%)	S^B(1%)

Setup 3 from Table 4 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), H^B-5 was used as host material H^N, E^B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B.

Device Results VII


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	1200 cd/m²

D36	0.24	528	0.29	0.64	5.08	23.8	1.00
D37	0.21	530	0.31	0.63	5.80	18.0	3.87
D38	0.23	530	0.33	0.62	7.71	16.3	9.01

As can be concluded from device results VII, D38 according to the present invention shows a significantly prolonged lifetime as compared to D36 and D37. This comes along with a somewhat reduced, but still high efficiency (EQE). All three devices display a narrow emission which is expressed by FWHM values below 0.25 eV in all cases. D38 displays the best overall device performance, when taking the narrow emission, the still high EQE and the very long lifetime into account.

TABLE 5

Setup 4 of exemplary organic electroluminescent devices (OLEDs).

Layer	Thickness	Sublayers	Material

10	100 nm	single layer	Al
9	2 nm	single layer	Liq
8	20 nm	single layer	NBPhen
7	10 nm	single layer	HBM1
6	5 nm	sublayer 13	H^B:
	2 nm	sublayer 12	EET-1:
	5 nm	sublayer 11	EET-2:
	2 nm	sublayer 10	S ^B
	5 nm	sublayer	9
	2 nm	sublayer	8
	5 nm	sublayer 7
	2 nm	sublayer	6
	5 nm	sublayer	5
	2 nm	sublayer	4
	5 nm	sublayer	3
	2 nm	sublayer	2
	5 nm	sublayer	1
5	10 nm	single layer	H	^P
4	10 nm	single layer	TCTA
3	50 nm	single layer	NPB
2	5 nm	single layer	HAT-CN
1	50 nm	single layer	ITO
substrate			glass

Composition of the light-emitting layer B of device D39 (the percentages refer to weight percent):


Layer	Sublayer	D39

Emission	13	H^B(79%):
layer (6)		EET-1 (20%):
		EET-2 (1%)
	12	H^B(79%):
		H^N(20%):
		S^B(1%)
	11	H^B(79%):
		EET-1 (20%):
		EET-2 (1%)
	10	H^B(79%):
		H^N(20%):
		S^B(1%)
	9	H^B(79%):
		EET-1 (20%):
		EET-2 (1%)
	8	H^B(79%):
		H^N(20%):
		S^B(1%)
	7	H^B(79%):
		EET-1 (20%):
		EET-2 (1%)
	6	H^B(79%):
		H^N(20%):
		S^B(1%)
	5	H^B(79%):
		EET-1 (20%):
		EET-2 (1%)
	4	H^B(79%):
		H^N(20%):
		S^B(1%)
	3	H^B(79%):
		EET-1 (20%):
		EET-2 (1%)
	2	H^B(79%):
		H^N(20%):
		S^B(1%)
	1	H^B(79%):
		EET-1 (20%):
		EET-2 (1%)

Setup 4 from Table 5 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), H^B-5 was used as host material H^N, E^B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here exemplarily a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B.

Device Results VIII


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	1200 cd/m²

D39	0.23	528	0.33	0.62	6.21	15.3	0.73*

*The lifetime is given relative to D38.

As can be concluded from device results VIII, reducing the thickness of the H^B:E^B:P^B-sublayers from 8 nm (D38) to 5 nm (D39) while using a largely analogue stack architecture, did not result in an improved device performance. Nevertheless, D39 still displays a narrow emission, high EQE and good lifetime.
Composition of the light-emitting layer B of devices D40 and D41 (the percentages refer to weight percent):


Layer	D40	D41

Emission	H^B(79%):	H^B(75%):
layer (6)	E^B(20%):	E^B(20%):
	EET-2 (0%):	EET-2 (4%):
	S^B(1%)	S^B(1%)

Setup 1 from Table 2 was used, wherein H^B-15 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), E^B-10 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results IX


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	1200 cd/m²

D40	0.16	534	0.33	0.64	3.93	13.1	1.00
D41	0.18	534	0.35	0.63	5.09	12.9	3.02

As can be concluded from device results IX, device D41 according to the present invention shows a superior overall performance as compared to device D40

TABLE 6

Setup 5 of exemplary organic electroluminescent devices (OLEDs).

Layer	Thickness	Material

10	100 nm	Al
9	2 nm	Liq
8	20 nm	NBPhen
7	10 nm	HBM1
6	50 nm	H^B:
		EET-1:
		EET-2:
		S ^B
5	10 nm	EBM1
4	10 nm	TCTA
3	60 nm	NPB
2	5 nm	HAT-CN
1	50 nm	ITO
substrate		glass

Composition of the light-emitting layer B of devices D42 to D44 (the percentages refer to weight percent):


Layer	D42	D43	D44

Emission	H^B(79%):	H^B(78%):	H^B(78%):
layer (6)	H^N(0%):	H^N(20%):	H^N(0%):
	EET-1	EET-1	EET-1
	(20%):	(0%):	(20%):
	EET-2 (0%):	EET-2	EET-2 (1%):
	S^B(1%)	(1%):	S^B(1%)
		S^B(1%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), H^B-5 was used as host material H^N, E^B-10 was used as excitation energy transfer component EET-1 (here a TADF material E^B), P^B-2 was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results X


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	1200 cd/m²

D42	0.18	532	0.33	0.64	3.81	14.4	1.00
D43	0.18	532	0.32	0.65	4.00	14.9	0.17
D44	0.18	534	0.33	0.64	4.31	14.8	1.77

As can be concluded from device results X, device D44 according to the present invention shows a superior overall performance as compared to device D43 which lacks the excitation energy transfer component EET-1 (here a TADF material E^Bmore specifically E^B-10) and device D42 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically P^B-2) when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. In the absence of the TADF material E^B-10, an n-host (here exemplarily H^B-5) was used to increase the electron mobility within the EML.
Composition of the light-emitting layer B of devices D45 to D49 (the percentages refer to weight percent):


Layer	D45	D46	D47	D48	D49

Emission	H^B(80%):	H^B(79%):	H^B(79%):	H^B(78%):	H^B(78%):
layer (6)	H^N(0%):	H^N(20%):	H^N(0%):	H^N(20%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(0%):	(20%):	(0%):	(20%):
	EET-2	EET-2	EET-2	EET-2	EET-2
	(0%):	(1%):	(0%):	(1%):	(1%):
	S^B(0%)	S^B(0%)	S^B(1%)	S^B(1%)	S^B(1%)

Setup 1 from Table 2 was used, wherein H^B-4 was used as host material H^B(p-host H^P; also used as material for the electron blocking layer 5), H^B-5 was used as host material H^N, E^B-10 was used as excitation energy transfer component EET-1 (here a TADF material E^B), P ^B4 was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XI


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	1200 cd/m²

D45	0.34	521	0.31	0.60	5.04	17.5	1.00
D46	0.25	522	0.32	0.63	5.91	27.0	0.72
D47	0.16	532	0.31	0.65	6.02	20.0	2.27
D48	0.17	531	0.32	0.65	6.56	22.5	0.64
D49	0.17	532	0.33	0.64	7.70	19.2	4.39

As can be concluded from device results XI, device D49 according to the present invention shows a superior overall performance as compared to device D48 which lacks the excitation energy transfer component EET-1 (here a TADF material E^Bmore specifically E^B-10) and device D47 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically P^B-4) and device D46 which employs P^B-4 as the emitter material in spite of S^B-I and device D45 which employs E^B-10 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. In the absence of the TADF material E^B-10, an n-host (here exemplarily H^B-5) was used to increase the electron mobility within the EML.
Composition of the light-emitting layer B of devices D50 to D64 (the percentages refer to weight percent):


Layer	D50	D51	D52	D53	D54	D55

Emission	H^B(80%):	H^B(79%):	H^B(79%):	H^B(78%):	H^B(78%):	H^B(75%):
layer (6)	H^N(0%):	H^N(20%):	H^N(0%):	H^N(20%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(0%):	(20%):	(0%):	(20%):	(20%):
	EET-2 (0%):	EET-2	EET-2	EET-2	EET-2	EET-2 (4%):
	S^B(0%)	(1%):	(0%):	(1%):	(1%):	S^B(1%)
		S^B(0%)	S^B(1%)	S^B(1%)	S^B(1%)

Layer	D56	D57	D58	D59	D60	D61

Emission	H^B(75.5%):	H^B(72%):	H^B(72.5%):	H^B(65.5%):	H^B(55.5%):	H^B(67.5%):
layer (6)	H^N(0%):	H^N(0%):	H^N(0%):	H^N(0%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(20%):	(20%):	(30%):	(40%):	(30%):
	EET-2	EET-2	EET-2	EET-2	EET-2	EET-2
	(4%):	(7%):	(7%):	(4%):	(4%):	(3%):
	S^B(0.5%)	S^B(1%)	S^B(0.5%)	S^B(0.5%)	S^B(0.5%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), H^B-5 was used as host material H^N, E^B-11 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XII


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEx	CIEy	[Volt]	[%]	1200 cd/m²

D50	0.35	530	0.34	0.57	3.51	11.0	1.00
D51	0.28	508	0.27	0.63	3.85	18.7	0.47
D52	0.17	534	0.32	0.64	3.67	12.7	0.90
D53	0.16	532	0.31	0.65	3.83	14.5	0.84
D54	0.19	532	0.32	0.65	4.29	17.5	1.91
D55	0.16	534	0.33	0.64	4.71	20.2	6.72
D56	0.17	532	0.32	0.65	4.75	19.0	10.71
D57	0.17	534	0.33	0.64	4.70	18.3	6.18
D58	0.18	532	0.32	0.64	4.69	16.9	7.21
D59	0.19	532	0.33	0.64	4.54	18.7	14.51
D60	0.20	532	0.34	0.63	4.22	16.9	14.27
D61	0.21	532	0.34	0.63	4.54	18.0	17.15

As can be concluded from device results XII, device D54 according to the present invention shows a superior overall performance as compared to device D53 which lacks the excitation energy transfer component EET-1 (here a TADF material E^Bmore specifically E^B-11) and device D52 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃) and device D51 which employs Ir(ppy)₃as the emitter material in spite of S^B-I and device D50 which employs E^B-11 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. When comparing the performance of devices D55 to D58, it can be concluded that the reduction of the concentration of the small FWHM emitter (here exemplarily S^B-1) in the EML from 1% to 0.5% may result in a prolonged device lifetime. Devices D59 to D61 were also prepared according to the present invention and, especially in comparison with D55 according to the present invention, indicate that increasing the concentration of the excitation energy transfer component EET-1 (here a TADF material E^B, more specifically E^B-11) from 20% to 30% or even to 40% may result in an improved overall device performance. The comparison between the devices D55 to D58 and between D60 and D61 indicates that in contrast, a low concentration of the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃) is beneficial for the device performance. In the absence of the TADF material E^B-11, an n-host (here exemplarily H^B-5) was used to increase the electron mobility within the EML.
Composition of the light-emitting layer B of devices D62 to D71 (the percentages refer to weight percent):


Layer	D62	D63	D64	D65	D66

Emission	H^B(80%):	H^B(79%):	H^B(79%):	H^B(78%):	H^B(79%):
layer (6)	H^N(0%):	H^N(20%):	H^N(0%):	H^N(20%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(0%):	(20%):	(0%):	(20%):
	EET-2 (0%):	EET-2	EET-2	EET-2	EET-2
	S^B(0%)	(1%):	(0%):	(1%):	(1%):
		S^B(0%)	S^B(1%)	S^B(1%)	S^B(0%)

Layer	D67	D68	D69	D70	D71

Emission	H^B(78%):	H^B(75%):	H^B(67%):	H^B(57%):	H^B(47%):
layer (6)	H^N(0%):	H^N(0%):	H^N(0%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1	EET-1
	(20%):	(20%):	(30%):	(40%):	(50%):
	EET-2 (1%):	EET-2	EET-2	EET-2	EET-2
	S^B(1%)	(4%):	(2.5%):	(2.5%):	(2.5%):
		S^B(1%)	S^B(0.5%)	S^B(0.5%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), H^B-5 was used as host material H^N, E^B-11 was used as excitation energy transfer component EET-1 (here a TADF material E^B), P^B-2. was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XIII

D62	0.35	530	0.34	0.57	3.51	10.98	1.00
D63	0.28	516	0.30	0.63	3.94	21.33	2.47
D64	0.17	534	0.32	0.64	3.64	13.74	1.81
D65	0.17	534	0.32	0.65	3.96	19.87	3.76
D66	0.16	520	0.33	0.61	4.30	15.09	5.17
D67	0.17	534	0.33	0.64	4.35	20.89	9.59
D68	0.17	534	0.34	0.64	4.65	21.9	19.51
D69	0.20	532	0.34	0.63	4.56	19.3	23.18
D70	0.22	532	0.35	0.62	4.24	17.2	17.96
D71	0.24	532	0.36	0.61	3.96	14.6	8.61

As can be concluded from device results XIII, device D67 according to the present invention shows a superior overall performance as compared to device D66 which lacks the small FWHM emitter S^B(here exemplarily S^B-1) and device D65 which lacks the excitation energy transfer component EET-1 (here a TADF material E^B, more specifically E^B-11) and device D64 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically P^B-2) and device D63 which employs P^B-2 as the emitter material in spite of S^B-I and device D62 which employs E^B-11 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. When comparing the performance of devices D67 to D71, it can be concluded that for the given set of materials, a concentration of 30% of EET-1 (here E^B-11) and 2.5% of EET-2 (here P^B-2) and of 0.5% of S^B-I afforded the best performing device (D69).
Composition of the light-emitting layer B of devices D72 to D79 (the percentages refer to weight percent):


Layer	D72	D73	D74	D75

Emission	H^B(80%):	H^B(79%):	H^B(79%):	H^B(78%):
layer (6)	H^N(0%):	H^N(20%):	H^N(0%):	H^N(20%):
	EET-1	EET-1	EET-1	EET-1
	(20%):	(0%):	(20%):	(0%):
	EET-2 (0%):	EET-2	EET-2	EET-2
	S^B(0%)	(1%):	(0%):	(1%):
		S^B(0%)	S^B(1%)	S^B(1%)

Layer	D76	D77	D78	D79

Emission	H^B(78%):	H^B(78.5%):	H^B(75%):	H^B(75.5%):
layer (6)	H^N(0%):	H^N(0%):	H^N(0%):	H^N(0%):
	EET-1	EET-1	EET-1	EET-1
	(20%):	(20%):	(20%):	(20%):
	EET-2 (1%):	EET-2 (1%):	EET-2	EET-2
	S^B(1%)	S^B(0.5%)	(4%):	(4%):
			S^B(1%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), H^B-5 was used as host material H^N, E^B-11 was used as excitation energy transfer component EET-1 (here a TADF material E^B), P^B-4 was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XIV

D72	0.26	528	0.34	0.57	3.67	10.6	1.00
D73	0.24	520	0.30	0.64	4.36	25.0	0.54
D74	0.17	534	0.32	0.64	3.78	14.0	1.18
D75	0.16	532	0.32	0.65	4.39	13.2	0.57
D76	0.17	534	0.33	0.64	4.72	19.6	3.65
D77	0.18	530	0.32	0.64	4.66	19.8	7.29
D78	0.17	534	0.34	0.64	5.71	23.5	19.39
D79	0.19	530	0.33	0.64	5.57	22.6	35.59

As can be concluded from device results XIV, device D76 according to the present invention shows a superior overall performance as compared to device D75 which lacks the excitation energy transfer component EET-1 (here a TADF material E^B,more specifically E^B-11) and device D74 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically P^B-4) and device D73 which employs P^B-4 as the emitter material in spite of S^B-1 and device D72 which employs E^B-11 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. When comparing the performance of devices D76 to D79, it can be concluded that the reduction of the concentration of the small FWHM emitter S^B(here exemplarily S^B-1) from 1% to 0.5% may improve the overall device performance.
Composition of the light-emitting layer B of devices D80 to D85 (the percentages refer to weight percent):


Layer	D80	D81	D82

Emission	H^B(70%):	H^B(79.5%):	H^B(69.5%):
layer (6)	EET-1	EET-1	EET-1
	(30%):	(20%):	(30%):
	EET-2 (0%):	EET-2	EET-2
	S^B(0%)	(0%):	(0%):
		S^B(0.5%)	S^B(0.5%)

Layer	D83	D84	D85

Emission	H^B(66%):	H^B(75.5%):	H^B(65.5%):
layer (6)	EET-1	EET-1	EET-1
	(30%):	(20%):	(30%):
	EET-2	EET-2	EET-2 (4%):
	(4%):	(4%):	S^B(0.5%)
	S^B(0%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-15 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XV


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEX	CIEy	[Volt]	[%]	1200 cd/m²

D80	0.41	532	0.35	0.57	3.43	10.2	1.00
D81	0.19	530	0.32	0.63	3.45	12.8	0.88
D82	0.19	530	0.32	0.63	3.44	12.3	1.50
D83	0.38	518	0.36	0.59	4.50	13.2	4.50
D84	0.19	532	0.32	0.64	4.81	18.3	5.12
D85	0.19	532	0.33	0.63	4.54	17.7	9.23

As can be concluded from device results XV, device D84 according to the present invention shows a superior overall performance as compared to device D81 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B(here exemplarily Ir(ppy)₃). Furthermore, D85 according to the present invention shows a superior overall performance as compared to device D83 which lacks the small FWHM emitter S^B(here exemplarily S^B-1) and device D80 which employs E^B-15 as the emitter material in spite of E^BE1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.
Composition of the light-emitting layer B of devices D86 to D90 (the percentages refer to weight percent):


Layer	D86	D87	D88	D89	D90

Emission	H^B(70%):	H^B	H^B	H^B	H^B
layer (6)	EET-1	(79.5%):	(69.5%):	(75.5%):	(65.5%):
	(30%):	EET-1	EET-1	EET-1	EET-1
	EET-2 (0%):	(20%):	(30%):	(20%):	(30%):
	S^B(0%)	EET-2	EET-2	EET-2	EET-2
		(0%):	(0%):	(4%):	(4%):
		S^B	S^B	S^B	S^B
		(0.5%)	(0.5%)	(0.5%)	(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-15 was used as excitation energy transfer component EET-2 (here a TADF material E^B), P^B-2 was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XVI


					Voltage	EQE at	Relative
					at 10	1000	lifetime
	FWHM	λ_max			mA/cm²	cd/m²	LT95 at
Device	[eV]	[nm]	CIEX	CIEy	[Volt]	[%]	1200 cd/m²

D86	0.41	532	0.35	0.57	3.43	10.2	1.00
D87	0.19	530	0.32	0.63	3.45	12.8	0.55
D88	0.19	532	0.32	0.63	3.44	12.3	0.96
D89	0.19	532	0.32	0.64	5.14	19.0	1.98
D90	0.20	532	0.34	0.63	4.64	19.3	3.44

As can be concluded from device results XVI, devices D89 and D90 according to the present invention show a superior overall performance as compared to device D87 and D88 which lack the excitation energy transfer component EET-1 (here a phosphorescence material P^B, more specifically P^B-2) and device D86 which employs E^B-15 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.
Composition of the light-emitting layer B of devices D91 to D94 (the percentages refer to weight percent):


Layer	D91	D92	D93	D94

Emission	H^B(70%):	H^B(69.5%):	H^B(66%):	H^B(65.5%):
layer (6)	EET-1	EET-1	EET-1	EET-1
	(30%):	(30%):	(30%):	(30%):
	EET-2 (0%):	EET-2	EET-2	EET-2
	S^B(0%)	(0%):	(4%):	(4%):
		S^B(0.5%)	S^B(0%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-16 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B.
A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XVII

D91	0.33	518	0.30	0.61	3.08	19.4	1.00
D92	0.18	532	0.31	0.64	3.25	18.7	1.72
D93	0.33	520	0.33	0.61	3.61	20.6	7.61
D94	0.18	534	0.33	0.64	3.83	24.7	18.21

As can be concluded from device results XVII, device D94 according to the present invention shows a superior overall performance as compared to device D93 which lacks the small FWHM emitter S^B(here exemplarily S^B-1) and device D92 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃) and device D91 which employs E^B-16 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.
Composition of the light-emitting layer B of devices D91 to D94 (the percentages refer to weight ercent):


Layer	D95	D96	D97

Emission	H^B(69.5%):	H^B(66%):	H^B(65.5%):
layer (6)	EET-1	EET-1	EET-1
	(30%):	(30%):	(30%):
	EET-2	EET-2	EET-2
	(0%):	(4%):	(4%):
	S^B(0.5%)	S^B(0%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-17 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XVIII

D95	0.20	532	0.33	0.63	3.64	11.3	1.00
D96	0.44	550	0.40	0.56	4.27	8.4	3.77
D97	0.24	534	0.37	0.61	4.42	13.5	4.49

As can be concluded from device results XVIII, device D97 according to the present invention shows a superior overall performance as compared to device D96 which lacks the small FWHM emitter S^B(here exemplarily S^B-1) and device D95 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃), when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.
Composition of the light-emitting layer B of devices D98 to D101 (the percentages refer to weight percent):


Layer	D98	D99	D100	D101

Emission	H^B(70%):	H^B(69.5%):	H^B(66%):	H^B(65.5%):
layer (6)	EET-1	EET-1	EET-1	EET-1
	(30%):	(30%):	(30%):	(30%):
	EET-2 (0%):	EET-2	EET-2	EET-2
	S^B(0%)	(0%):	(4%):	(4%):
		S^B(0.5%)	S^B(0%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-18 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

D98	0.40	535	0.37	0.57	3.68	8.7	1.00
D99	0.20	531	0.34	0.62	3.87	8.7	1.22
D100	0.43	546	0.39	0.57	4.52	9.8	5.85
D101	0.22	532	0.36	0.61	4.80	11.4	8.24

Device Results XIX

As can be concluded from device results XIX, device D101 according to the present invention shows a superior overall performance as compared to device D100 which lacks the small FWHM emitter S^B(here exemplarily S^B-1) and device D99 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃) and device D98 which employs E^B-18 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.
Composition of the light-emitting layer B of devices D102 to D105 (the percentages refer to weight percent):


Layer	D102	D103	D104	D105

Emission	H^B(70%):	H^B(69.5%):	H^B(66%):	H^B(65.5%):
layer (6)	EET-1	EET-1	EET-1	EET-1
	(30%):	(30%):	(30%):	(30%):
	EET-2 (0%):	EET-2	EET-2	EET-2
	S^B(0%)	(0%):	(4%):	(4%):
		S^B(0.5%)	S^B(0%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-19 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-1 was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XX

D102	0.41	532	0.353	0.573	3.56	9.25	1.00
D103	0.19	531	0.324	0.631	3.64	12.31	1.70
D104	0.41	535	0.373	0.582	4.31	11.68	4.07
D105	0.20	532	0.339	0.628	4.51	16.97	8.31

As can be concluded from device results XX, device D105 according to the present invention shows a superior overall performance as compared to device D104 which lacks the small FWHM emitter S^B(here exemplarily S^B-1) and device D103 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃) and device D102 which employs E^B-19 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.
Composition of the light-emitting layer B of devices D106 to D108 (the percentages refer to weight percent):


Layer	D106	D107	D108

Emission	H^B(70%):	H^B(69.5%):	H^B(65.5%):
layer (6)	EET-1	EET-1	EET-1
	(30%):	(30%):	(30%):
	EET-2 (0%):	EET-2	EET-2
	S^B(0%)	(0%):	(4%):
		S^B(0.5%)	S^B(0.5%)

Setup 5 from Table 6 was used, wherein H^B-15 was used as host material H^B(p-host H^P), E^B-21 was used as excitation energy transfer component EET-1 (here a TADF material E^B), Ir(ppy)₃was used as excitation energy transfer component EET-2 (here a phosphorescence material P^B), and S^B-I was used as small FWHM emitter S^B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

Device Results XXI

D106	0.41	520	0.30	0.56	3.65	11.2	1.00
D107	0.18	528	0.29	0.63	3.61	12.4	1.69
D108	0.18	530	0.31	0.65	5.10	19.4	15.88

As can be concluded from device results XXI, device D108 according to the present invention shows a superior overall performance as compared to device D107 which lacks the excitation energy transfer component EET-2 (here a phosphorescence material P^B, more specifically Ir(ppy)₃) and device D106 which employs E^B-21 as the emitter material in spite of S^B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

Claims

1-20. (canceled)

21. An organic electroluminescent device comprising:

one or more light-emitting layers, each of the one or more light-emitting layers comprising one or more sublayers,

wherein the one or more sublayers are adjacent to each other and as a whole comprise:

(i) one or more first excitation energy transfer components, each having a highest occupied molecular orbital HOMO(EET-1) with an energy E^HOMO(EET-1) and a lowest unoccupied molecular orbital LUMO(EET-1) with an energy E^LUMO(EET-1); and

(ii) one or more second excitation energy transfer components, each having a highest occupied molecular orbital HOMO(EET-2) with an energy E^HOMO(EET-2) and a lowest unoccupied molecular orbital LUMO(EET-2) with an energy E^LUMO(EET-2); and

(iii) one or more emitters to emit light with a full width at half maximum (FWHM) of less than or equal to 0.25 eV, each having a highest occupied molecular orbital HOMO(S^B) with an energy E^HOMO(S^B), and a lowest unoccupied molecular orbital LUMO(S^B) with an energy E^LUMO(S^B); and optionally

(iv) one or more host materials, each having a highest occupied molecular orbital HOMO(H^B) with an energy E^HOMO(H^B), and a lowest unoccupied molecular orbital LUMO(H^B) with an energy E^LUMO(H^B),

wherein the first excitation energy transfer component and the second excitation energy transfer component are structurally not identical,

wherein an outermost sublayer from the one or more sublayers of each of the one or more light-emitting layers comprises at least one material selected from the group consisting of the first excitation energy transfer component, the second excitation energy transfer component, and the emitter, and

wherein relations expressed by Formulas (2) (3), (5) and (6) apply to materials comprised in a same light-emitting layer of the one or more light-emitting layers, and when the same light-emitting layer comprises the one or more host materials, relations expressed by Formulas (1) and (4) further apply:

E ^LUMO(EET-1)<E ^LUMO(H ^B) (1)

E ^LUMO(EET-1)<E ^LUMO(EET-2) (2)

E ^LUMO(EET-1)<E ^LUMO(S ^B) (3)

E ^HOMO(EET-2)≥E ^HOMO(H ^B) (4)

E ^HOMO(EET-2)≥E ^HOMO(EET-1) (5)

E ^HOMO(EET-2)≥E ^HOMO(S ^B) (6).

22. The organic electroluminescent device according to claim 21, wherein within at least one light-emitting layer of the one or more light-emitting layers, the lowest unoccupied molecular orbital LUMO(EET-1) of at least one first excitation energy transfer component of the one or more first excitation energy transfer components has an energy E^LUMO(EET-1) of less than −2.3 eV.

23. The organic electroluminescent device according to claim 21, wherein at least one light-emitting layer of the one or more light-emitting layers comprises less than or equal to 5% by weight of the one or more emitters based on a total weight of the respective light-emitting layer.

24. The organic electroluminescent device according to claim 21, wherein at least one light-emitting layer of the one or more light-emitting layers comprises 15-50% by weight of the one or more first excitation energy transfer components based on a total weight of the respective light-emitting layer.

25. The organic electroluminescent device according to claim 21, wherein at least one light-emitting layer of the one or more light-emitting layers comprises less than or equal to 5% by weight of the one or more second excitation energy transfer components based on a total weight of the respective light-emitting layer.

26. The organic electroluminescent device according to claim 21, wherein:

(i) each of the one or more first excitation energy transfer components has a lowermost excited singlet state S1^EET-1with an energy level E(S1^EET-1) and a lowermost excited triplet state T1^EET-1with an energy level E(T1^EET-1); and

(ii) each of the one or more second excitation energy transfer components has a lowermost excited singlet state S1^EET-2with an energy level E(S1^EET-2) and a lowermost excited triplet state T1^EET-2with an energy level E(T1^EET-2); and

(iii) each of the one or more emitters has a lowermost excited singlet state S1 with an energy level E(S1^S) and a lowermost excited triplet state T1s with an energy level E(T1); and

(iv) each of the optional one or more host materials has a lowermost excited singlet state S1^Hwith an energy level E(S1H) and a lowermost excited triplet state T1^Hwith an energy level E(T1H); and

wherein relations expressed by Formulas (10) and (15) apply to materials comprised in a same light-emitting layer of the one or more light-emitting layers, and when the same light-emitting layer comprises the one or more host materials, relations expressed by Formulas (7) to (9) further apply:

E(S1^H)>E(S1^EET-1) (7)

E(S1^H)>E(S1^EET-2) (8)

E(S1^H)>E(S1^S) (9)

E(S1^EET-1)>E(S1^S) (10)

E(T1^EET-2)>E(S1^S) (15).

27. The organic electroluminescent device according to claim 1, wherein the device is to emit light with an FWHM of a main emission peak of less than 0.25 eV.

28. The organic electroluminescent device according to claim 21, wherein:

(i) each of the one or more first excitation energy transfer components has a lowermost excited singlet state S1^EET-1with an energy level E(S1^EET-1) and a lowermost excited triplet state T1^EET-1with an energy level E(T1^EET-1);

(iii) each of the one or more emitters has a lowermost excited singlet state S1 with an energy level E(S1s) and a lowermost excited triplet state T1s with an energy level E(T1); and

wherein relations expressed by Formulas (14) to (16) apply to materials comprised in a same light-emitting layer:

E(T1^EET-1)≥E(T1^EET-2) (4)

E(T1^EET-2)>E(S1^S) (15)

E(T1^EET-2)>E(T1) (16).

29. The organic electroluminescent device according to claim 21, wherein within each of the one or more light-emitting layers,

at least one first excitation energy transfer component of the one or more first excitation energy transfer components:

(i) has a ΔE_STvalue, which corresponds to an energy difference between energy level E(S1^EET-1) of a lowermost excited singlet state and energy level E(T1^EET-1) of a lowermost excited triplet state, of less than 0.4 eV; and/or

(ii) comprises at least one transition metal with a standard atomic weight of more than 40; and

at least one second excitation energy transfer component of the one or more second excitation energy transfer components:

(i) has a ΔE_STvalue, which corresponds to an energy difference between energy level E(S1^EET-2) of a lowermost excited singlet state and energy level E(T1^EET-2) of a lowermost excited triplet state, of less than 0.4 eV; and/or

(ii) comprises at least one transition metal with a standard atomic weight of more than 40.

30. The organic electroluminescent device according to claim 21, wherein within at least one light-emitting layer of the one or more light-emitting layers, at least one second excitation energy transfer component comprises iridium (Ir) and/or platinum (Pt).

31. The organic electroluminescent device according to one or more of claim 21, wherein within at least one light-emitting layer of the one or more light-emitting layers:

(i) at least one emitter of the one or more emitters is a boron (B)-containing emitter, and/or

(ii) the at least one emitter comprises a pyrene core structure.

32. The organic electroluminescent device according to claim 21, wherein in at least one light-emitting layer of the one or more light-emitting layers, at least one emitter of the one or more emitters comprises a structure represented by Formula DABNA-I or Formula BNE-1:

wherein in Formula DABNA-I,

ring A′, ring B′, and ring C′ each independently represent an aromatic ring having 5 to 24 ring atoms or a heteroaromatic ring having 5 to 24 ring atoms and 1 to 3 thereof being heteroatoms independently of each other selected from the group consisting of N, O, S, and Se, and

wherein,

one or more hydrogen atoms in each of the aromatic or heteroaromatic rings A′, B′, and C′ are optionally and independently of each other substituted by a substituent R^DABNA-1which is at each occurrence independently of each other selected from the group consisting of:

deuterium;

N(R^DABNA-2)₂;

OR^DABNA-2;

SR^DABNA-2;

Si(R^DABNA-2)₃;

B(OR^DABNA-2)₂;

OSO₂, R^DABNA-2;

CF₃;

CN;

halogen;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^DABNA-2and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^DABNA-2and wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^DABNA-2and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2;

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^DABNA-2and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, C═C, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2;

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^DABNA-2and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-2C═CR^DABNA-2, Si(R^DABNA-2)₂, Ge(R^DABNA-2)₂, Sn(R^DABNA-2)₂, C═O, C═S, C═Se, C═NR^DABNA-2, P(═O)(R^DABNA-2), SO, SO₂, NR^DABNA-2, O, S or CONR^DABNA-2;

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^DABNA-2;

C₃-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^DABNA-2; and

aliphatic, cyclic amines comprising 4 to 18 carbon atoms and 1 to 3 nitrogen atoms;

R^DABNA-2is at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^DABNA-6)₂;

OR^DABNA-6;

SR^DABNA-6;

Si(R^DABNA-6)₃;

B(OR^DABNA-6)₂;

OSO₂, R^DABNA-6;

CF₃;

CN;

halogen;

C₁-C₅-alkyl,

which is optionally substituted with one or more substituents R^DABNA-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6;

C₁-C₅-alkoxy,

which is optionally substituted with one or more substituents R^DABNA-6and

C₁-C₅-thioalkoxy,

which is optionally substituted with one or more substituents R^DABNA-6and

C₂-C₅-alkenyl,

which is optionally substituted with one or more substituents R^DABNA-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C≡C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6;

C₂-C₅-alkynyl,

which is optionally substituted with one or more substituents R^DABNA-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C-CR^DABNA-6, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6;

C₆-C₁₈-aryl,

which is optionally substituted with one or more substituents R^DABNA-6;

C₃-C₁₇-heteroaryl,

which is optionally substituted with one or more substituents R^DABNA-6; and

wherein two or more adjacent substituents selected from R^DABNA-1and R^DABNA-2optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to an adjacent ring A′, B′ or C′ to form a fused ring system, wherein a total number of ring atoms in the optionally formed fused ring system is 8 to 30;

Y^aand Y^bare each independently selected from the group consisting of a direct single bond, NR^DABNA-3, O, S, C(R^DABNA-3)₂, Si(R^DABNA-3)₂, BR^DABNA-3and Se;

R^DABNA-3is at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^DABNA-4 ₂;

OR^DABNA-4;

SR^DABNA-4;

Si(R^DABNA-4)₃;

B(OR^DABNA-4)₂;

OSO₂, R^DABNA-4;

CF₃;

CN;

halogen;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^DABNA-4and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, C═C, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4, P(═O)(R^DABNA-4), SO, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4;

C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^DABNA-4; and

C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^DABNA-4; and

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^DABNA-4; and

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^DABNA-4; and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-4C═CR^DABNA-4, Si(R^DABNA-4)₂, Ge(R^DABNA-4)₂, Sn(R^DABNA-4)₂, C═O, C═S, C═Se, C═NR^DABNA-4, P(═O)(R^DABNA-4), SO, SO₂, NR^DABNA-4, O, S or CONR^DABNA-4;

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^DABNA-4;

C₃-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^DABNA-4; and

R^DABNA-4is at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^DABNA-5)₂;

OR^DABNA-5;

SR^DABNA-5;

Si(R^DABNA-5)₃;

B(OR^DABNA-5)₂;

OSO₂, R^DABNA-5;

CF₃;

CN;

halogen;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^DABNA-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C≡C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or ONR^DABNA-5;

C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^DABNA-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5,

C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^DABNA-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5D, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5,

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^DABNA-5and wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, C═C, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O), R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5,

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^DABNA-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-5C═CR^DABNA-5, Si(R^DABNA-5)₂, Ge(R^DABNA-5)₂, Sn(R^DABNA-5)₂, C═O, C═S, C═Se, C═NR^DABNA-5, P(═O)(R^DABNA-5), SO, SO₂, NR^DABNA-5, O, S or CONR^DABNA-5,

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^DABNA-5,

C₃-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^DABNA-5; and

R^DABNA-5is at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^DABNA-6)₂;

OR^DABNA-6;

SR^DABNA-6;

Si(R^DABNA-6)₃;

B(OR^DABNA-6)₂;

OSO₂, R^DABNA-6;

CF₃;

CN;

halogen;

C₁-C₅-alkyl,

which is optionally substituted with one or more substituents R^DABNA-6and

C₁-C₅-alkoxy,

which is optionally substituted with one or more substituents R^DABNA-6and

C₁-C₅-thioalkoxy,

which is optionally substituted with one or more substituents R^DABNA-6and

C₂-C₅-alkenyl,

which is optionally substituted with one or more substituents R^DABNA-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, C═C, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6

C₂-C₅-alkynyl,

which is optionally substituted with one or more substituents R^DABNA-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^DABNA-6C═CR^DABNA-6, Si(R^DABNA-6)₂, Ge(R^DABNA-6)₂, Sn(R^DABNA-6)₂, C═O, C═S, C═Se, C═NR^DABNA-6, P(═O)(R^DABNA-6), SO, SO₂, NR^DABNA-6, O, S or CONR^DABNA-6;

C₆-C₁₈-aryl,

which is optionally substituted with one or more substituents R^DABNA-6;

C₃-C₁₇-heteroaryl,

which is optionally substituted with one or more substituents R^DABNA-6; and

wherein two or more adjacent substituents selected from R^DABNA-3, R^DABNA-4; and R^DABNA-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other, wherein a total number of ring atoms in the optionally formed ring system is 8 to 30;

R^DABNA-6is at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

OPh (Ph=phenyl);

SPh;

CF₃;

CN;

F;

Si(C₁-C₅-alkyl)₃;

Si(Ph)₃;

C₁-C₅-alkyl,

wherein optionally one or more hydrogen atoms are independently substituted by deuterium, Ph, CN, CF₃, or F;

C₁-C₅-alkoxy,

wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, or F;

C₁-C₅-thioalkoxy,

C₂-C₅-alkenyl,

C₂-C₅-alkynyl,

C₆-C₁₈-aryl,

wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF₃, F, C₁-C₅-alkyl, SiMe₃, SiPh₃or C₆-C₁₈-aryl substituents;

C₃-C₁₇-heteroaryl,

N(C₆-C₁₈-aryl)₂,

N(C₃-C₁₇-heteroaryl)₂; and

N(C₃-C₁₇-heteroaryl)(C₆-C₁₈-aryl);

wherein when Y^ais NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3;

R^DABNA-3is at each occurrence optionally and independently of each other bond to one or both of adjacent rings A′ and B′, via a direct single bond or via a connecting atom or atom group being in each case independently selected from NR^DABNA-1, O, S, C(R^DABNA-1)₂, Si(R^DABNA-1)₂, BR^DABNA-1and Se; and

wherein when Y^bis NR^DABNA-3C(R^DABNA-3)₂, Si(R^DABNA-3)₂, or BR^DABNA-3;

R^DABNA-3is at each occurrence optionally and independently of each other bond to one or both of adjacent rings A′ and C′, via a direct single bond or via a connecting atom or atom group being in each case independently selected from NR^DABNA-1, O, S, C(R^DABNA-1)₂, Si(R^DABNA-1)₂, BR^DABNA-1and Se; and

wherein optionally, two or more structures represented by Formula DABNA-I are conjugated with each other;

wherein optionally at least one of R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5, or R^DABNA-6is replaced by a bond to a further chemical entity represented by Formula DABNA-I, and

wherein optionally at least one hydrogen atom of any of R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5or R^DABNA-6is replaced by a bond to the further chemical entity represented by Formula DABNA-I;

wherein in Formula BNE-1,

c and d are each independently 0 or 1;

e and f are 0 or 1, wherein e and f are identical;

g and h are 0 or 1, wherein g and h are identical;

when d is 0, O, e and f are both 1, and when d is 1, e and f are both 0;

when c is 0, O, g and h are both 1, and when c is 1, g and h are both 0;

V¹is nitrogen (N) or CR^BNE-V;

V²is nitrogen (N) or CR^BNE-I;

X³is selected from the group consisting of a direct bond, CR^BNE-3, R^BNE-4, C═CR^BNE-3, R^BNE-4, C═O, C═NR^BNE-3, NR^BNE-3, O, SIR^BNE-3, R^BNE-4, S, S(O) and S(O)₂;

Y²is selected from the group consisting of a direct bond, CR^BNE-3′, R^BNE-4′,

C═CR^BNE-3′, R^BNE-4′, C═O, C═NR^BNE-3′, NR^BNE-3′, O, SiR^BNE-3′, R^BNE-4'S, S(O) and S(O)₂;

R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-Vare each independently selected from the group consisting of:

hydrogen;

deuterium;

N(R^BNE-5)₂;

OR^BNE-5;

Si(R^BNE-5)₃;

B(OR^BNE-5)₂;

B(R^BNE-5)₂;

OSO₂, R^BNE-5;

CF₃;

CN;

F;

CI;

Br;

I;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^BNE-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5;

C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^BNE-5and

C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^BNE-5and

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^BNE-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C≡C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5,

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^BNE-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5;

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^BNE-5; and

C₂-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^BNE-5,

R^BNE-d, R^BNE-d′, and R^BNE-e,are independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^BNE-5)₂;

OR^BNE-5;

Si(R^BNE-5)₃;

B(OR^BNE-5)₂;

B(R^BNE-5)₂;

OSO₂, R^BNE-5;

CF₃;

CN;

F;

CI;

Br;

I;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^BNE-aand

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C≡C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5;

C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^BNE-aand

C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^BNE-aand

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^BNE-aand wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C≡C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5;

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^BNE-aand

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-C═CR^BNE-5, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5;

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^BNE-a; and

C₂-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^BNE-a;

R^BNE-ais at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^BNE-5)₂;

OR^BNE-5;

Si(R^BNE-5)₃;

B(OR^BNE-5)₂;

B(R^BNE-5)₂;

OSO₂, R^BNE-5;

CF₃;

CN;

F;

CI;

Br;

I;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^BNE-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5, C═C, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5; C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^BNE-5and

C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^BNE-5and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-5C═CR^BNE-5C═-, Si(R^BNE-5)₂, Ge(R^BNE-5)₂, Sn(R^BNE-5)₂, C═O, C═S, C═Se, C═NR^BNE-5, P(═O)(R^BNE-5), SO, SO₂, NR^BNE-5, O, S or CONR^BNE-5;

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^BNE-5and

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^BNE-5and

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^BNE-5; and

C₂-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^BNE-5;

R^BNE-5is at each occurrence independently of each other selected from the group consisting of:

hydrogen;

deuterium;

N(R^BNE-6)₂;

OR^BNE-6;

Si(R^BNE-6)₃;

B(OR^BNE-6)₂;

B(R^BNE-6)₂;

OSO₂, R^BNE-6;

CF₃;

CN;

F;

CI;

Br;

I;

C₁-C₄₀-alkyl,

which is optionally substituted with one or more substituents R^BNE-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, C═C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6;

C₁-C₄₀-alkoxy,

which is optionally substituted with one or more substituents R^BNE-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-600CR^BNE-6, C═C, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, S or CONR^BNE-6;

C₁-C₄₀-thioalkoxy,

which is optionally substituted with one or more substituents R^BNE-6and

C₂-C₄₀-alkenyl,

which is optionally substituted with one or more substituents R^BNE-6and

C₂-C₄₀-alkynyl,

which is optionally substituted with one or more substituents R^BNE-6and

wherein one or more non-adjacent CH₂-groups are optionally substituted by R^BNE-6C═CR^BNE-6, Si(R^BNE-6)₂, Ge(R^BNE-6)₂, Sn(R^BNE-6)₂, C═O, C═S, C═Se, C═NR^BNE-6, P(═O)(R^BNE-6), SO, SO₂, NR^BNE-6, O, S or CONR^BNE-6;

C₆-C₆₀-aryl,

which is optionally substituted with one or more substituents R^BNE-6; and

C₂-C₅₇-heteroaryl,

which is optionally substituted with one or more substituents R^BNE-6;

R^BNE-6is at each occurrence independently from another selected from the group consisting of:

hydrogen;

deuterium;

OPh;

CF₃;

CN;

F;

C₁-C₅-alkyl,

wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, Ph or F;

C₁-C₅-alkoxy,

wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF₃, or F;

C₁-C₅-thioalkoxy,

C₂-C₅-alkenyl,

C₂-C₅-alkynyl,

C₆-C₁₈-aryl,

which is optionally substituted with one or more C₁-C₅-alkyl substituents;

C₂-C₁₇-heteroaryl,

which is optionally substituted with one or more C₁-C₅-alkyl substituents;

N(C₆-C₁₈-aryl)₂;

N(C₂-C₁₇-heteroaryl)₂; and

N(C₂-C₁₇-heteroaryl)(C₆-C₁₈-aryl);

wherein R^BNE-IIIand R^BNE-e,optionally combine to form a direct single bond; and

wherein two or more of adjacent substituents selected from among R^BNE-a, R^BNE-d, R^BNE-d′, R^BNE-e, R^BNE-3′, R^BNE-4′ and R^BNE-5optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;

wherein two or more of adjacent substituents selected from among R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IVand R^BNE-Voptionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other;

wherein optionally two or more structures represented by Formula BNE-1 are conjugated with each other;

wherein optionally at least one of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to a further chemical entity represented by Formula BNE-1, and

wherein optionally at least one hydrogen atom of any of R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-5, R^BNE-3′, R^BNE-4′, R^BNE-6, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, or R^BNE-d′, is replaced by a bond to the further chemical entity represented by Formula BNE-1.

33. The organic electroluminescent device according to claim 21, further comprising an anode, an electron blocking layer on the anode, the one or more light-emitting layers on the electron blocking layer, a hole blocking layer on the one or more light-emitting layers, and a cathode on the hole blocking layer,

wherein for at least one light-emitting layer of the one or more light-emitting layers, a recombination zone, where electron-hole-recombination occurs upon applying an electrical current to the device, fulfills both of following criteria:

(i) 20-80% of its volume is located between the electron blocking layer and an imaginary boundary surface, wherein the imaginary boundary surface is parallel to the electron blocking layer and located exactly in a middle of the respective light-emitting layer; and

(ii) 20-80% of its volume is located between the hole blocking layer and the imaginary boundary surface; and

wherein a total volume of the recombination zone adds up to 100%.

34. A method for generating light, the method comprising applying an electrical current to the organic electroluminescent device according to claim 21 to generate light.

35. The method according to claim 34, wherein the light has an emission maximum of the main emission peak being within the wavelength of:

(i) from 510 nm to 550 nm, or

(ii) from 440 nm to 470 nm, or

(iii) from 610 nm to 665 nm.

36. The organic electroluminescent device according to claim 21, wherein the device is to emit light with an FWHM of a main emission peak of less than 0.20 eV.

37. The organic electroluminescent device according to claim 32,

wherein two or more structures represented by Formula DABNA-I are fused to each other by sharing at least one bond.

38. The organic electroluminescent device according to claim 37,

wherein optionally two or more structures represented by Formula DABNA-I are present in the emitter and share at least one aromatic or heteroaromatic ring.

39. The organic electroluminescent device according to claim 38,

wherein the at least one aromatic or heteroaromatic ring is selected from ring A′, ring B′, ring C′, R^DABNA-1, R^DABNA-2, R^DABNA-3, R^DABNA-4, R^DABNA-5, R^DABNA-6and any aromatic or heteroaromatic ring formed by two or more adjacent substituents.

40. The organic electroluminescent device according to claim 32,

wherein two or more structures represented by Formula BNE-1 are present in the emitter and share at least one aromatic or heteroaromatic ring selected from ring a, ring b, ring c′, R^BNE-1, R^BNE-2, R^BNE-1′, R^BNE-2′, R^BNE-3, R^BNE-4, R^BNE-3′, R^BNE-4′, R^BNE-5, R^BNE-6, R^BNE-I, R^BNE-II, R^BNE-III, R^BNE-IV, R^BNE-V, R^BNE-a, R^BNE-e, R^BNE-d, R^BNE-d′, and any aromatic or heteroaromatic ring formed by two or more adjacent substituents.