US2998555A - Conductor connected to the alloying area of a crystalode, e. g., a transistor of the lloy type - Google Patents

Conductor connected to the alloying area of a crystalode, e. g., a transistor of the lloy type Download PDF

Info

Publication number
US2998555A
US2998555A US739488A US73948858A US2998555A US 2998555 A US2998555 A US 2998555A US 739488 A US739488 A US 739488A US 73948858 A US73948858 A US 73948858A US 2998555 A US2998555 A US 2998555A
Authority
US
United States
Prior art keywords
conductor
strip
transistor
crystalode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US739488A
Inventor
Klossika Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken AG
Original Assignee
Telefunken AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken AG filed Critical Telefunken AG
Application granted granted Critical
Publication of US2998555A publication Critical patent/US2998555A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Definitions

  • the conductor is made of a thin strip which consists substantially of silver, at least on the surface thereof, is tinned, preferably fire-tinned, at least at both ends thereof, and is soldered at one end to the alloying area and at the other end to a rigid conductor passing through the casing wall.
  • contact breakdowns at the alloying area occur no longer with the type of conductor according to the invention.
  • FIG. 1 there is shown an alloy-type transistor mounted on a casing 1.
  • the base conductor 2, the emitter conductor 3 and the collector conductor 4 comprise thin copper coated wires passing through the easing wall. These conductor wires are tinned at the ends thereof.
  • the emitter pellet 7 and the collector pellet 8 are surface-alloyed with the base plate 6.
  • the pellet 7 is connected to the conductor 9 which is constructed according to a preferred 'embodimen-t of the invention, and is tinned at both ends thereof.
  • the conductor 9 is attached to the conductor 3 by means of a spot-Welding machine.
  • the conductor 9 is bent twice to a right angle.
  • the bend 13 on the emitter side is so arranged that one leg lies parallel to the alloying surface and the germanium plate, and the other leg lies perpendicular Patented Aug. 29, 1961 thereto.
  • the strip 9 is thus represented with its narrow edge on the drawing.
  • a strip-shaped conductor '10 is connected at one end thereof to the collector pellet 8 and is spot-welded to .the conductor 4 in the area 12 on the other end; it is likewise bent in 14, so that one leg of the bend lies parallel to the alloying surface and the germanium plate while the other leg lies perpendicular thereto.
  • an alloy of about of silver and 20% of copper has been found suitable.
  • the thin strip 9 of the FIG. '1 is shown again in FIG. 2. It is tinned at both ends thereof, namely at 1 1 and the bend 13, by immersion into a tin bath.
  • the width of the strip and the position of the bend 13 are so calculated that when dipped into a tin bath of predetermined temperature the strip bend 13 is filled with a predetermined amount of tin 15 owing to surface tension. It has been found that in this form of embodiment the amount of tin 15 was but very little dispersed in the various samples examined, which is advantageous for mass production.
  • the strip conductor according to the invention can be suitably pressed on an alloy pellet by means of a pointed soldering iron, thus providing a permanent bond.
  • a conductor which exerts but a negligible force on said pellet, said conductor being made of a thin strip which consists substantially of silver at least on the surface thereof and is tinned at least at both ends thereof, one end of said strip being soldered to a rigid conductor and the other end of said strip being immersed in said alloy pellet so that the full width of said strip is utilized.
  • a conductor according to claim 1 wherein the thin strip consists of an alloy of about 80% silver and 20% copper.
  • a conductor according to claim 1 wherein said thin strip is provided with a bend at the end connected to the alloying area, one leg of said bend being parallel to said alloying area while the other leg is perpendicular thereto.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)

Description

- Aug. 29, 1961 w oss 2,998,555
CONDUCTOR CONNECTED TO THE ALLOYING AREA OF A CRYSTALODE, E.G. A TRANSISTOR OF THE ALLOY TYPE Filed June 5, 1958 63 a 5 7 #QQ L\4L:Lg O3 li mxiiw PIKE/VT 4660f United States Patent M CONDUCTOR CONNECTED TO THE ALLOYING AREA OF A CRYSTALODE, e.g., A TRANSISTOR OF THE ALLOY TYPE Walter Klossika, Ulm (Danube), Germany, assignor to Telefunken G.m.b.H., Berlin, Germany Filed June 3, 1958, Ser. No. 739,488 Claims priority, application Germany July 23, 1957 4 Claims. (Cl. 317-234) This invention relates to a conductor connected to the alloying area of a crystalode, e.g. a transistor, and exerting but a negligible force on said area.
It is already known to provide thin wires as conductors for alloy-type transistors in view of preventing the occurrence of substantial forces due to vibrations or thermal stresses during the operation or the manufacturing process. For this reason, thin copper wires tinned at one end thereof for ensuring better contact have been used heretofore as conductors passing through the casing wall. It has been found, however, that such transistors are not reliable, because mechanical stresses still occur and may break the contact between conductor and alloying area. In many cases, this breakdown happens only after days or months.
According to the invention, the conductor is made of a thin strip which consists substantially of silver, at least on the surface thereof, is tinned, preferably fire-tinned, at least at both ends thereof, and is soldered at one end to the alloying area and at the other end to a rigid conductor passing through the casing wall. Experience has shown that contact breakdowns at the alloying area occur no longer with the type of conductor according to the invention.
A preferred form of embodiment is illustrated in the drawings.
In FIG. 1 there is shown an alloy-type transistor mounted on a casing 1. The base conductor 2, the emitter conductor 3 and the collector conductor 4 comprise thin copper coated wires passing through the easing wall. These conductor wires are tinned at the ends thereof. To the base conductor 2 there is welded a ring junction 5 which is in electrical (ohmic) contact with the germanium plate 6. The emitter pellet 7 and the collector pellet 8 are surface-alloyed with the base plate 6. The pellet 7 is connected to the conductor 9 which is constructed according to a preferred 'embodimen-t of the invention, and is tinned at both ends thereof. At 11, the conductor 9 is attached to the conductor 3 by means of a spot-Welding machine. As shown in the drawing, the conductor 9 is bent twice to a right angle. The bend 13 on the emitter side is so arranged that one leg lies parallel to the alloying surface and the germanium plate, and the other leg lies perpendicular Patented Aug. 29, 1961 thereto. The strip 9 is thus represented with its narrow edge on the drawing. In a similar manner, a strip-shaped conductor '10 is connected at one end thereof to the collector pellet 8 and is spot-welded to .the conductor 4 in the area 12 on the other end; it is likewise bent in 14, so that one leg of the bend lies parallel to the alloying surface and the germanium plate while the other leg lies perpendicular thereto. As a material for the strip conductors, an alloy of about of silver and 20% of copper has been found suitable.
The thin strip 9 of the FIG. '1 is shown again in FIG. 2. It is tinned at both ends thereof, namely at 1 1 and the bend 13, by immersion into a tin bath. The width of the strip and the position of the bend 13 are so calculated that when dipped into a tin bath of predetermined temperature the strip bend 13 is filled with a predetermined amount of tin 15 owing to surface tension. It has been found that in this form of embodiment the amount of tin 15 was but very little dispersed in the various samples examined, which is advantageous for mass production. The strip conductor according to the invention can be suitably pressed on an alloy pellet by means of a pointed soldering iron, thus providing a permanent bond.
I claim:
1. In combination with an alloy pellet of a semiconductor device, a conductor which exerts but a negligible force on said pellet, said conductor being made of a thin strip which consists substantially of silver at least on the surface thereof and is tinned at least at both ends thereof, one end of said strip being soldered to a rigid conductor and the other end of said strip being immersed in said alloy pellet so that the full width of said strip is utilized.
2. A conductor according to claim 1 wherein the thin strip consists of an alloy of about 80% silver and 20% copper.
3. A conductor according to claim 1 wherein said thin strip is provided with a bend at the end connected to the alloying area, one leg of said bend being parallel to said alloying area while the other leg is perpendicular thereto.
4. A conductor according to claim 3 wherein the width of the strip and the position of the bend are such that when the bend is dipped into a .tin bath of predetermined temperature the strip bend is filled with a predetermined amount of tin, owing to surface tension.
References Cited in the file of this patent UNITED STATES PATENTS 2,784,300 Zuk Mar. 5, 1957 2,794,846 Fuller June 4, 1957 2,809,332 Sherwood 001. s, 1957 2,882,462 Zierdt Apr. 14, 1959

Claims (1)

1. IN COMBINATION WITH AN ALLOY PELLET OF A SEMICONDUCTOR DEVICE, A CONDUCTOR WHICH EXERTS BUT A NEGLIGIBLE FORCE ON SAID PELLET, SAID CONDUCTOR BEING MADE OF A THIN STRIP WHICH CONSISTS SUBSTANTIALLY OF SILVER AT LEAST ON THE SURFACE THEREOF AND IS TINNED AT LEAST AT BOTH ENDS THEREOF, ONE END OF SAID STRIP BEING SOLDERED TO A RIGID CONDUCTOR AND THE OTHER END OF SAID STRIP BEING IMMERSED IN SAID ALLOY PELLET SO THAT THE FULL WIDTH OF SAID STRIP IS UTILIZED.
US739488A 1957-07-23 1958-06-03 Conductor connected to the alloying area of a crystalode, e. g., a transistor of the lloy type Expired - Lifetime US2998555A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE895652X 1957-07-23

Publications (1)

Publication Number Publication Date
US2998555A true US2998555A (en) 1961-08-29

Family

ID=6847808

Family Applications (1)

Application Number Title Priority Date Filing Date
US739488A Expired - Lifetime US2998555A (en) 1957-07-23 1958-06-03 Conductor connected to the alloying area of a crystalode, e. g., a transistor of the lloy type

Country Status (2)

Country Link
US (1) US2998555A (en)
GB (1) GB895652A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3215907A (en) * 1961-12-08 1965-11-02 Western Electric Co Mounting tab for semiconductor devices
US3255394A (en) * 1962-06-15 1966-06-07 Gen Motors Corp Transistor electrode connection
US3474307A (en) * 1965-03-29 1969-10-21 Hitachi Ltd Semiconductor device for chopper circuits having lead wires of copper metal and alloys thereof
US3879840A (en) * 1969-01-15 1975-04-29 Ibm Copper doped aluminum conductive stripes and method therefor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2784300A (en) * 1954-12-29 1957-03-05 Bell Telephone Labor Inc Method of fabricating an electrical connection
US2794846A (en) * 1955-06-28 1957-06-04 Bell Telephone Labor Inc Fabrication of semiconductor devices
US2809332A (en) * 1953-07-29 1957-10-08 Rca Corp Power semiconductor devices
US2882462A (en) * 1953-09-29 1959-04-14 Gen Electric Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809332A (en) * 1953-07-29 1957-10-08 Rca Corp Power semiconductor devices
US2882462A (en) * 1953-09-29 1959-04-14 Gen Electric Semiconductor device
US2784300A (en) * 1954-12-29 1957-03-05 Bell Telephone Labor Inc Method of fabricating an electrical connection
US2794846A (en) * 1955-06-28 1957-06-04 Bell Telephone Labor Inc Fabrication of semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3215907A (en) * 1961-12-08 1965-11-02 Western Electric Co Mounting tab for semiconductor devices
US3255394A (en) * 1962-06-15 1966-06-07 Gen Motors Corp Transistor electrode connection
US3474307A (en) * 1965-03-29 1969-10-21 Hitachi Ltd Semiconductor device for chopper circuits having lead wires of copper metal and alloys thereof
US3879840A (en) * 1969-01-15 1975-04-29 Ibm Copper doped aluminum conductive stripes and method therefor

Also Published As

Publication number Publication date
GB895652A (en) 1962-05-02

Similar Documents

Publication Publication Date Title
US2929885A (en) Semiconductor transducers
GB730123A (en) Improved method of fabricating semi-conductive devices
GB848039A (en) Improvements in or relating to semiconductor devices
US3651448A (en) Power frame for integrated circuit
GB906524A (en) Semiconductor switching devices
GB937438A (en) Method of applying contacts to a semiconductor body
US2998555A (en) Conductor connected to the alloying area of a crystalode, e. g., a transistor of the lloy type
GB1151165A (en) Face-Bonded Semiconductor Devices
GB862453A (en) Improvements in or relating to semi-conductor devices
US3160798A (en) Semiconductor devices including means for securing the elements
GB848619A (en) Improvements in or relating to the fabrication of semiconductor rectifiers
ES358071A1 (en) Semiconductor having soft soldered connections thereto
US3036250A (en) Semiconductor device
GB1065897A (en) A semiconductor arrangement
US2629767A (en) Semiconductor amplifier or oscillator device
GB884340A (en) Improvements in semiconductor mounting
US3564352A (en) Strip design for a low cost plastic transistor
US2918719A (en) Semi-conductor devices and methods of making them
US3027502A (en) Semiconductor device
US3073006A (en) Method and apparatus for the fabrication of alloyed transistors
US3041510A (en) Transistor mounting
GB1062006A (en) Semiconductor device with flexible lead
US3258662A (en) Semiconductor housing
JPS5685842A (en) Semiconductor device having heat dissipating fin
US3177413A (en) Semi-conductor device