US3533919A - Manufacture of superconductors - Google Patents
Manufacture of superconductors Download PDFInfo
- Publication number
- US3533919A US3533919A US779819A US77981968A US3533919A US 3533919 A US3533919 A US 3533919A US 779819 A US779819 A US 779819A US 77981968 A US77981968 A US 77981968A US 3533919 A US3533919 A US 3533919A
- Authority
- US
- United States
- Prior art keywords
- metal
- tin
- source
- tape
- niobium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000002887 superconductor Substances 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 229910052758 niobium Inorganic materials 0.000 description 11
- 239000010955 niobium Substances 0.000 description 11
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 4
- 230000001464 adherent effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000021028 berry Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- IOUCSUBTZWXKTA-UHFFFAOYSA-N dipotassium;dioxido(oxo)tin Chemical compound [K+].[K+].[O-][Sn]([O-])=O IOUCSUBTZWXKTA-UHFFFAOYSA-N 0.000 description 1
- KJSMVPYGGLPWOE-UHFFFAOYSA-N niobium tin Chemical compound [Nb].[Sn] KJSMVPYGGLPWOE-UHFFFAOYSA-N 0.000 description 1
- 229910000657 niobium-tin Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- HHIQWSQEUZDONT-UHFFFAOYSA-N tungsten Chemical compound [W].[W].[W] HHIQWSQEUZDONT-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/80—Material per se process of making same
- Y10S505/815—Process of making per se
- Y10S505/816—Sputtering, including coating, forming, or etching
Definitions
- a process for depositing a first metal on a second metal which readily acquires a tenacious oxide film includes the steps of evaporating a layer of the first metal on a body of the second metal and electrodepositing a further quantity of the first metal on the resulting body.
- the evaporation step may include exposing the second metal to particles of the first metal liberated by electron bombardment in vacuo.
- the first metal may be mainly tin and the second metal mainly niobium.
- the present invention relates to the deposition of one metal on another.
- a well-known process for depositing a layer of one metal on another is electrodeposition, by which thick deposits can be built up fairly quickly.
- this process is impracticable for some metals which have a tenacious oxide film, such as niobium.
- a layer of tin applied to niobium by electroplating will not adhere to the niobium.
- a process for depositing a first metal on a second metal which readily acquires a tenacious oxide film includes the steps of evaporating a layer of the first metal on a body of the second metal and electrodepositing a further quantity of the first metal on the resulting body.
- the first metal may be mainly tin and the second metal mainly niobium.
- a source 21, made of tungsten or molybdenum, and containing tin is connected via a tube 23 (made of molybdenum or titanium) to a reservoir 25 so that the source 21 may be continually replenished with liquid tin.
- the source 21, the tube 23 and the reservoir 25 are all heated to keep the tin molten. This is shown schematically by a heater 27.
- the source 21 is maintained at earth potential.
- a circular filament 29 made of 0.015 inch tungsten or tantalum wire is used as an emitter of electrons to bombard the source 21.
- a total current of some 20 amps AC. is caused to flow in the filament 29.
- the filament 29 is supported within a hollow electrode 31 having the shape of the solid of revolution of a T about its vertical axis.
- the electrode 31 is maintained at a negative potential of 4,500 volts, and the filament 29 is connected to it.
- the whole assembly is held in an evacuated chamber or evacuated chambers. This is indicated schematically by an envelope 33.
- the source 21 In operation at a low rate of evaporation the source 21 is heated principally by bombardment of electrons ejected from the filament 29. In operation at a high rate of evaporation, however, the source 21 is heated by bombardment of electrons ejected by the filament 29, and also by an electric discharge passing through the ionised tin vapour directly between the electrode 31 and the source 21. In action the tin particles evaporated from the source 21 pass against the electron stream through a hole 35 in the electrode 31.
- the niobium tape is wound off a reel 37, over four sets of pulleys 3-9, 41, 43 and 45 and (after coating) on a reel 47.
- the pulleys may be multiple so that the tape passes many times over the evaporation source in such a way that both sides of the tape are coated.
- the tape In order to achieve a firmly adherent coating of tin it is necessary for the tape to be heated to some 400-SO0 C. either during or after coating. If the tape is passing slowly over the source it becomes heated sufficiently by radiation and electron bombardment from the filament but at a more rapid passage this heating is not sufficient. The heating can then be conveniently done in the coating apparatus by means of subsidiary electron bombardment heaters 49, 51 which heat the tape after deposition on each pass and before the deposit can be rubbed off by passage over a pulley.
- a number of separate lengths of tape could be simultaneously passed over the source or over a pair of sources to coat both sides. Each tape would then pass more slowly over the source.
- a very thin layer of tin deposited by the process described above is adequate to act as a key to enable a thicker deposit to be built up by electrodeposition, as for example from a potassium stannate bath. This deposit can be built up to the correct thickness for producing the desired quantities of niobium tin.
- the process would work in the same way if the source 21 contained an alloy which was mainly tin. Similarly the tape could be an alloy which was mainly niobium. Furthermore the process may be applicable to the plating of other metals which readily acquire tenacious oxide films, for example, aluminum.
- a method of depositing a first metal composed mainly of tin on a second metal composed mainly of niobium and which readily acquires a tenacious oxide film comprises the steps of: bombarding said first metal in liquid form with electrons from an electron emitter in vacuo to evaporate said first metal; contacting a body of said second metal with vapours of the evaporated first metal to form a vapour-deposited layer of said first metal on said body; a large voltage difference being maintained between said electron emitter and both said first metal and said body; and electrodepositing a further quantity of said first metal on the body over the vapour-deposited layer to provide an adherent electrodeposited layer of said first metal on said body.
- a method according to claim 1 including the further step of heating the body provided with the electrodeposited layer at a temperature of at least 860 C.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Description
Oct. 13, 1970 A. c. PRIOR MANUFACTURE 0F SUPERCONDUCTQRS Filed Nov. 29, 1968 I United States Patent ()flice 3,533,919 Patented Oct. 13, 1970 3,533,919 MANUFACTURE OF SUPERCONDUCTORS Arthur Cunningham Prior, Malvern, England, assignor to National Research Development Corporation, London, England Continuation-impart of application Ser. No. 434,924,
Feb. 24, 1965. This application Nov. 29, 1968, Ser.
Int. Cl. C23c 13/02; C2315 17/00 U.S. Cl. 204-38 Claims ABSTRACT OF THE DISCLOSURE A process for depositing a first metal on a second metal which readily acquires a tenacious oxide film includes the steps of evaporating a layer of the first metal on a body of the second metal and electrodepositing a further quantity of the first metal on the resulting body.
The evaporation step may include exposing the second metal to particles of the first metal liberated by electron bombardment in vacuo.
The first metal may be mainly tin and the second metal mainly niobium.
This application is a continuation-in-part of application Ser. No. 434,924, filed Feb. 24, 1965.
The present invention relates to the deposition of one metal on another.
A well-known process for depositing a layer of one metal on another is electrodeposition, by which thick deposits can be built up fairly quickly. However, this process is impracticable for some metals which have a tenacious oxide film, such as niobium. For example, a layer of tin applied to niobium by electroplating will not adhere to the niobium.
It is an object of the invention to provide a process for depositing a first metal on a second metal which has a tenacious oxide film whereby the deposit is more adherent.
According to the present invention a process for depositing a first metal on a second metal which readily acquires a tenacious oxide film includes the steps of evaporating a layer of the first metal on a body of the second metal and electrodepositing a further quantity of the first metal on the resulting body.
The first metal may be mainly tin and the second metal mainly niobium.
An embodiment of the invention will be described by. way of example with reference to the accompanying drawing, which is a diagram, partly in cross-section, of apparatus for tin plating niobium tape by vacuum evaporation of a tin source.
A source 21, made of tungsten or molybdenum, and containing tin is connected via a tube 23 (made of molybdenum or titanium) to a reservoir 25 so that the source 21 may be continually replenished with liquid tin. The source 21, the tube 23 and the reservoir 25 are all heated to keep the tin molten. This is shown schematically by a heater 27. The source 21 is maintained at earth potential.
A circular filament 29 made of 0.015 inch tungsten or tantalum wire is used as an emitter of electrons to bombard the source 21. A total current of some 20 amps AC. is caused to flow in the filament 29. The filament 29 is supported within a hollow electrode 31 having the shape of the solid of revolution of a T about its vertical axis. The electrode 31 is maintained at a negative potential of 4,500 volts, and the filament 29 is connected to it. The whole assembly is held in an evacuated chamber or evacuated chambers. This is indicated schematically by an envelope 33.
In operation at a low rate of evaporation the source 21 is heated principally by bombardment of electrons ejected from the filament 29. In operation at a high rate of evaporation, however, the source 21 is heated by bombardment of electrons ejected by the filament 29, and also by an electric discharge passing through the ionised tin vapour directly between the electrode 31 and the source 21. In action the tin particles evaporated from the source 21 pass against the electron stream through a hole 35 in the electrode 31.
The niobium tape is wound off a reel 37, over four sets of pulleys 3-9, 41, 43 and 45 and (after coating) on a reel 47. To increase the speed of coating the pulleys may be multiple so that the tape passes many times over the evaporation source in such a way that both sides of the tape are coated.
In order to achieve a firmly adherent coating of tin it is necessary for the tape to be heated to some 400-SO0 C. either during or after coating. If the tape is passing slowly over the source it becomes heated sufficiently by radiation and electron bombardment from the filament but at a more rapid passage this heating is not sufficient. The heating can then be conveniently done in the coating apparatus by means of subsidiary electron bombardment heaters 49, 51 which heat the tape after deposition on each pass and before the deposit can be rubbed off by passage over a pulley.
In an alternative arrangement for rapid coating of a large quantity of tape as an alternative to the large number of passes of a single tape a number of separate lengths of tape could be simultaneously passed over the source or over a pair of sources to coat both sides. Each tape would then pass more slowly over the source.
A very thin layer of tin deposited by the process described above is adequate to act as a key to enable a thicker deposit to be built up by electrodeposition, as for example from a potassium stannate bath. This deposit can be built up to the correct thickness for producing the desired quantities of niobium tin.
After electroplating it may be advantageous to heat the tape more rapidly to 860 C. or above in order to improve the quality of the deposit and its adhesion to the niobium.
Obviously the process would work in the same way if the source 21 contained an alloy which was mainly tin. Similarly the tape could be an alloy which was mainly niobium. Furthermore the process may be applicable to the plating of other metals which readily acquire tenacious oxide films, for example, aluminum.
I claim:
1. A method of depositing a first metal composed mainly of tin on a second metal composed mainly of niobium and which readily acquires a tenacious oxide film, which process comprises the steps of: bombarding said first metal in liquid form with electrons from an electron emitter in vacuo to evaporate said first metal; contacting a body of said second metal with vapours of the evaporated first metal to form a vapour-deposited layer of said first metal on said body; a large voltage difference being maintained between said electron emitter and both said first metal and said body; and electrodepositing a further quantity of said first metal on the body over the vapour-deposited layer to provide an adherent electrodeposited layer of said first metal on said body.
2. A method according to claim 1 wherein said body is unheated prior to contacting the vapours of the evaporated metal and is heated to a temperature of from 40 0500' C. after contacting said vapours.
3. A method according to claim 1 including the further step of heating the body provided with the electrodeposited layer at a temperature of at least 860 C.
4 4. A method according to claim 1 wherein said first 3,021,271 2/ 1962 Wehner 204192 inetal consists essentially of tin and said second metal 2,993,266 7/1961 Berry 2'9'25.42 consists essentially of niobium. 3,443,304 5/1969 Maier 29472.1 5. A method according to claim 4 wherein said first 3,346,467 10/1967 Allen 204-37 metal and said'body are electrically grounded.
- 5 HOWARD s. WILLIAMS, Primary Examiner References Cited R. L. ANDREWS, Assistant Examiner UNITED STATES PATENTS 3,305,473 2/1967 Moseson 204 29s 3,253,331 5/1966 'Limansky 29473.1 10 117 107;204 192 3,178,308 4/1965 Oxley et a1. 117-106
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43492465A | 1965-02-24 | 1965-02-24 | |
GB7038/68A GB1207593A (en) | 1968-02-13 | 1968-02-13 | The deposition of one metal on another |
Publications (1)
Publication Number | Publication Date |
---|---|
US3533919A true US3533919A (en) | 1970-10-13 |
Family
ID=94176905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US779819A Expired - Lifetime US3533919A (en) | 1965-02-24 | 1968-11-29 | Manufacture of superconductors |
Country Status (1)
Country | Link |
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US (1) | US3533919A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4043888A (en) * | 1973-07-30 | 1977-08-23 | Westinghouse Electric Corporation | Superconductive thin films having transition temperature substantially above the bulk materials |
US4081573A (en) * | 1975-07-21 | 1978-03-28 | Siemens Aktiengesellschaft | Method for preparing superconductive Nb3 Sn layers on niobium surfaces for high-frequency applications |
US4407871A (en) * | 1980-03-25 | 1983-10-04 | Ex-Cell-O Corporation | Vacuum metallized dielectric substrates and method of making same |
US4431711A (en) * | 1980-03-25 | 1984-02-14 | Ex-Cell-O Corporation | Vacuum metallizing a dielectric substrate with indium and products thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2993266A (en) * | 1958-06-16 | 1961-07-25 | Bell Telephone Labor Inc | Method of making a capacitor employing film-forming metal electrode |
US3021271A (en) * | 1959-04-27 | 1962-02-13 | Gen Mills Inc | Growth of solid layers on substrates which are kept under ion bombardment before and during deposition |
US3178308A (en) * | 1960-09-07 | 1965-04-13 | Pfaudler Permutit Inc | Chemical vapor plating process |
US3253331A (en) * | 1962-12-06 | 1966-05-31 | Westinghouse Electric Corp | Glass-metallizing technique |
US3305473A (en) * | 1964-08-20 | 1967-02-21 | Cons Vacuum Corp | Triode sputtering apparatus for depositing uniform coatings |
US3346467A (en) * | 1964-05-01 | 1967-10-10 | Nat Res Corp | Method of making long length superconductors |
US3443304A (en) * | 1965-12-11 | 1969-05-13 | Siemens Ag | Method of producing superconductive tapes or bands |
-
1968
- 1968-11-29 US US779819A patent/US3533919A/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2993266A (en) * | 1958-06-16 | 1961-07-25 | Bell Telephone Labor Inc | Method of making a capacitor employing film-forming metal electrode |
US3021271A (en) * | 1959-04-27 | 1962-02-13 | Gen Mills Inc | Growth of solid layers on substrates which are kept under ion bombardment before and during deposition |
US3178308A (en) * | 1960-09-07 | 1965-04-13 | Pfaudler Permutit Inc | Chemical vapor plating process |
US3253331A (en) * | 1962-12-06 | 1966-05-31 | Westinghouse Electric Corp | Glass-metallizing technique |
US3346467A (en) * | 1964-05-01 | 1967-10-10 | Nat Res Corp | Method of making long length superconductors |
US3305473A (en) * | 1964-08-20 | 1967-02-21 | Cons Vacuum Corp | Triode sputtering apparatus for depositing uniform coatings |
US3443304A (en) * | 1965-12-11 | 1969-05-13 | Siemens Ag | Method of producing superconductive tapes or bands |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4043888A (en) * | 1973-07-30 | 1977-08-23 | Westinghouse Electric Corporation | Superconductive thin films having transition temperature substantially above the bulk materials |
US4081573A (en) * | 1975-07-21 | 1978-03-28 | Siemens Aktiengesellschaft | Method for preparing superconductive Nb3 Sn layers on niobium surfaces for high-frequency applications |
US4407871A (en) * | 1980-03-25 | 1983-10-04 | Ex-Cell-O Corporation | Vacuum metallized dielectric substrates and method of making same |
US4431711A (en) * | 1980-03-25 | 1984-02-14 | Ex-Cell-O Corporation | Vacuum metallizing a dielectric substrate with indium and products thereof |
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