US4272355A - Process of bonding sputtering targets to target electrodes - Google Patents
Process of bonding sputtering targets to target electrodes Download PDFInfo
- Publication number
- US4272355A US4272355A US06/124,679 US12467980A US4272355A US 4272355 A US4272355 A US 4272355A US 12467980 A US12467980 A US 12467980A US 4272355 A US4272355 A US 4272355A
- Authority
- US
- United States
- Prior art keywords
- target
- electrode
- sputtering system
- target material
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract description 9
- 238000005477 sputtering target Methods 0.000 title description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 239000013077 target material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910000846 In alloy Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 7
- SPAHBIMNXMGCMI-UHFFFAOYSA-N [Ga].[In] Chemical compound [Ga].[In] SPAHBIMNXMGCMI-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract description 3
- 239000006023 eutectic alloy Substances 0.000 abstract description 3
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Definitions
- This invention relates to the bonding of sputtering targets to target electrodes.
- An object of this invention is to provide an improved process for joining sputtering targets to sputtering electrodes.
- Another object of this invention is to provide a bonding technique to minimize cracking of high expansion sputtering targets during sputter deposition.
- Another object is to provide a target bonding process which allows quick target change without the need to remove the electrode from the system.
- Another object is to provide a sputter deposition process which affords high deposition rates.
- Target fracture requires removal of the target and the target electrode from the sputtering system for replacement of the target.
- One approach is to use very low power densities so that thermal effects are diminished.
- the deposition rate is very slow, which tends to be time-consuming and costly during mass production.
- FIGURE of the drawing is a front elevation sectional view of an apparatus employed for implementing the process of this invention.
- a sputtering deposition system comprises a vacuum chamber 10 and a vacuum pump 12 for evacuating the chamber to a desired background pressure level.
- Argon gas is fed into the chamber 10 through a bleed valve 14 to provide the necessary background environment for sputter deposition.
- a target electrode 16 to which a target body 18 is mounted is positioned within the chamber 10.
- a substrate electrode 20 is fixed adjacent to and facing the target electrode 16.
- the electrodes may be water cooled to maintain a desired temperature during operation.
- a substrate material 22, which may be silicon, ferrite, or sapphire for example, is placed on the face of the substrate electrode 20.
- the electrodes are preferably circular, but may be square, rectangular, or any desired geometry.
- the target body 18 is aligned symmetrically with the target electrode 16. To eliminate spurious sputtering that may occur at the back of the electrode, each electrode 16 and 20 has a ground shield 22 and 24 respectively surrounding the peripheral and back portions, leaving the faces of the electrodes exposed for supporting target bodies and substrates.
- the perimeter of the target body 18 is spaced equally from the ground shield 22 around the target, so as to prevent electrical arcing to ground.
- O-ring seals 23 and 25 respectively are provided between the electrodes 16 and 20 and the housing of the vacuum chamber to prevent leakage of the gas.
- the target body 18 is mounted to the face of the target electrode 16 by means of gallium-indium eutectic alloy, which forms a liquid layer 28 at ambient temperature.
- gallium-indium eutectic alloy is swabbed onto the surface of the target body 18. Assuming that the diameter of the target body is about 10 inches, a first layer of about 1 cc. of gallium-indium eutectic is used to form a layer on the target surface. Similarly, a layer of gallium-indium eutectic is brushed across the target electrode 16. Then an additional 1-2 cc. is spread over each of the treated faces to fill in voids and to maximize adhesion. In each case, the target and its electrode are first processed to be reasonably flat prior to placing the eutectic on the faces.
- the target is then placed on the target electrode so that the faces of the target body and electrode, which are covered with eutectic, are engaged to form a floating bond between the target and its electrode.
- the target is moved against and across the electrode 16, so as to cause any existing voids in the bond to be filled by the gallium-indium alloy, and positioned in alignment with the electrode.
- the gallium-indium alloy serves as a liquid pool which minimizes the occurrence of thermal gradients and if any thermal gradients do exist, the floating target is free to expand and contract to accommodate any stresses which might result. This virtually eliminates fracturing and cracking of the target body, which would occur with solid bonds that are known to develop hot spots and stresses.
- the sputtering system is activated.
- RF power is applied by means of power supply 30 so that sputtering of the target material occurs.
- the applied voltage ionizes the argon gas, and the argon ions are attracted to the target electrode which has a relatively negative polarity.
- the target electrode may have a voltage of -500 to -2000 volts peak-to-peak, and the ion bombardment may be in the range of energies of 100 to 2000 electron volts.
- the substrate electrode would be relatively more positive than the target electrode and would be biased in a range of 0 to -1000 volts peak-to-peak, depending upon the magnitude of the voltage seen at the target electrode.
- the relatively energetic ion bombardment increases the sputtering and deposition rates.
- the floating bond As a result of the floating bond provided by the liquid gallium-indium eutectic that holds the target body to the target electrode, it is possible to employ a relatively high input power, such as in the range of 400 to 5000 Watts, by way of example. Consequently, high deposition rates are made possible without any deleterious effects, such as fracturing of the target body.
- the floating bond By virtue of the floating bond provided, it is also possible to rapidly change targets and supply new targets to the target electrodes, without pulling out the entire assembly of electrode and target from the vacuum chamber. This feature makes this bonding technique attractive not only for brittle materials but all target materials which do not alloy with gallium or indium.
- the target material may be any solid material, such as alumina, for example, or a brittle ceramic. It should be understood that the invention is not limited to a specific target material or to the particular parameters of the sputtering operation set forth above.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
In the process of sputter deposition of targets on target electrodes, a gallium-indium eutectic alloy is employed to form a floating bond between the target material and the target electrode. Relatively high radio frequency (r.f.) power density is used to increase the deposition rate without cracking the target.
Description
This invention relates to the bonding of sputtering targets to target electrodes.
An object of this invention is to provide an improved process for joining sputtering targets to sputtering electrodes.
Another object of this invention is to provide a bonding technique to minimize cracking of high expansion sputtering targets during sputter deposition.
Another object is to provide a target bonding process which allows quick target change without the need to remove the electrode from the system.
Another object is to provide a sputter deposition process which affords high deposition rates.
In the process of sputtering deposition of target material onto substrates, a major problem is the fracturing of the target due to thermal expansion induced stresses. Target fracture requires removal of the target and the target electrode from the sputtering system for replacement of the target. One approach is to use very low power densities so that thermal effects are diminished. However, with very low power densities, the deposition rate is very slow, which tends to be time-consuming and costly during mass production.
The invention will be described in detail with reference to the sole FIGURE of the drawing, which is a front elevation sectional view of an apparatus employed for implementing the process of this invention.
With reference to the drawing, a sputtering deposition system comprises a vacuum chamber 10 and a vacuum pump 12 for evacuating the chamber to a desired background pressure level. Argon gas is fed into the chamber 10 through a bleed valve 14 to provide the necessary background environment for sputter deposition.
A target electrode 16 to which a target body 18 is mounted is positioned within the chamber 10. A substrate electrode 20 is fixed adjacent to and facing the target electrode 16. The electrodes may be water cooled to maintain a desired temperature during operation. A substrate material 22, which may be silicon, ferrite, or sapphire for example, is placed on the face of the substrate electrode 20. In this implementation, the electrodes are preferably circular, but may be square, rectangular, or any desired geometry. The target body 18 is aligned symmetrically with the target electrode 16. To eliminate spurious sputtering that may occur at the back of the electrode, each electrode 16 and 20 has a ground shield 22 and 24 respectively surrounding the peripheral and back portions, leaving the faces of the electrodes exposed for supporting target bodies and substrates. The perimeter of the target body 18 is spaced equally from the ground shield 22 around the target, so as to prevent electrical arcing to ground. O- ring seals 23 and 25 respectively are provided between the electrodes 16 and 20 and the housing of the vacuum chamber to prevent leakage of the gas.
In an implementation of this invention, the target body 18 is mounted to the face of the target electrode 16 by means of gallium-indium eutectic alloy, which forms a liquid layer 28 at ambient temperature. To effectuate the attachment of the target body, the gallium-indium eutectic alloy is swabbed onto the surface of the target body 18. Assuming that the diameter of the target body is about 10 inches, a first layer of about 1 cc. of gallium-indium eutectic is used to form a layer on the target surface. Similarly, a layer of gallium-indium eutectic is brushed across the target electrode 16. Then an additional 1-2 cc. is spread over each of the treated faces to fill in voids and to maximize adhesion. In each case, the target and its electrode are first processed to be reasonably flat prior to placing the eutectic on the faces.
The target is then placed on the target electrode so that the faces of the target body and electrode, which are covered with eutectic, are engaged to form a floating bond between the target and its electrode. The target is moved against and across the electrode 16, so as to cause any existing voids in the bond to be filled by the gallium-indium alloy, and positioned in alignment with the electrode.
The gallium-indium alloy serves as a liquid pool which minimizes the occurrence of thermal gradients and if any thermal gradients do exist, the floating target is free to expand and contract to accommodate any stresses which might result. This virtually eliminates fracturing and cracking of the target body, which would occur with solid bonds that are known to develop hot spots and stresses.
Once the target body and its electrode 16, and the substrates and electrode 20 are positioned in proper alignment, the sputtering system is activated. RF power is applied by means of power supply 30 so that sputtering of the target material occurs. During the sputtering operation, the applied voltage ionizes the argon gas, and the argon ions are attracted to the target electrode which has a relatively negative polarity. For example, the target electrode may have a voltage of -500 to -2000 volts peak-to-peak, and the ion bombardment may be in the range of energies of 100 to 2000 electron volts. The substrate electrode would be relatively more positive than the target electrode and would be biased in a range of 0 to -1000 volts peak-to-peak, depending upon the magnitude of the voltage seen at the target electrode. The relatively energetic ion bombardment increases the sputtering and deposition rates.
As a result of the floating bond provided by the liquid gallium-indium eutectic that holds the target body to the target electrode, it is possible to employ a relatively high input power, such as in the range of 400 to 5000 Watts, by way of example. Consequently, high deposition rates are made possible without any deleterious effects, such as fracturing of the target body. By virtue of the floating bond provided, it is also possible to rapidly change targets and supply new targets to the target electrodes, without pulling out the entire assembly of electrode and target from the vacuum chamber. This feature makes this bonding technique attractive not only for brittle materials but all target materials which do not alloy with gallium or indium. The target material may be any solid material, such as alumina, for example, or a brittle ceramic. It should be understood that the invention is not limited to a specific target material or to the particular parameters of the sputtering operation set forth above.
Claims (7)
1. A sputtering system for coating substrates comprising:
a vacuum chamber;
means for introducing a gas into said chamber;
a target material for coating said substrates;
a first electrode having a face for mounting said target material thereto;
a second electrode for supporting said substrates positioned adjacent to and in alignment with said first electrode;
means for applying voltages to said electrodes to ionize said gas, so that gas ions energetically bombard said target material; and
a eutectic metal material that is liquid at ambient temperature disposed between said first electrode and said target material for forming a floating bond therebetween.
2. A sputtering system as in claim 1 wherein said eutectic is a gallium-indium alloy.
3. A sputtering system as in claim 1, including shields disposed respectively around said electrodes.
4. A sputtering system as in claim 1 wherein said target material is aligned symmetrically relative to said target electrode.
5. A sputtering system as in claim 1, wherein said means for applying voltages is adapted to apply a voltage at the first electrode in the range of -500 volts to -2000 volts peak-to-peak.
6. A sputtering system as in claim 1, wherein said target material is ceramic.
7. A sputtering system as in claim 1, wherein said means for introducing a gas is adapted to introduce argon into said vacuum chamber.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/124,679 US4272355A (en) | 1980-02-26 | 1980-02-26 | Process of bonding sputtering targets to target electrodes |
| DE8080107369T DE3064449D1 (en) | 1980-02-26 | 1980-11-26 | An apparatus for coating substrates |
| EP80107369A EP0034654B1 (en) | 1980-02-26 | 1980-11-26 | An apparatus for coating substrates |
| JP56002759A JPS5925031B2 (en) | 1980-02-26 | 1981-01-13 | sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/124,679 US4272355A (en) | 1980-02-26 | 1980-02-26 | Process of bonding sputtering targets to target electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US4272355A true US4272355A (en) | 1981-06-09 |
Family
ID=22416236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US06/124,679 Expired - Lifetime US4272355A (en) | 1980-02-26 | 1980-02-26 | Process of bonding sputtering targets to target electrodes |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4272355A (en) |
| EP (1) | EP0034654B1 (en) |
| JP (1) | JPS5925031B2 (en) |
| DE (1) | DE3064449D1 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4392939A (en) * | 1982-03-05 | 1983-07-12 | U.S. Philips Corporation | Magnetron cathode sputtering system |
| US4448652A (en) * | 1981-12-07 | 1984-05-15 | Siemens Aktiengesellschaft | Device for the cathode sputtering of a metal |
| US4904362A (en) * | 1987-07-24 | 1990-02-27 | Miba Gleitlager Aktiengesellschaft | Bar-shaped magnetron or sputter cathode arrangement |
| EP0453147A1 (en) * | 1990-04-18 | 1991-10-23 | International Business Machines Corporation | Testing electronic components |
| EP0539954A1 (en) * | 1991-10-31 | 1993-05-05 | Siemens Solar Industries International, Inc. | Method and apparatus for sputtering of a liquid |
| US5679431A (en) * | 1993-10-08 | 1997-10-21 | Hmt Technology Corporation | Sputtered carbon overcoat in a thin-film medium and sputtering method |
| US6287437B1 (en) | 2000-05-05 | 2001-09-11 | Alcatel | Recessed bonding of target for RF diode sputtering |
| US6684759B1 (en) | 1999-11-19 | 2004-02-03 | Vladimir Gorokhovsky | Temperature regulator for a substrate in vapor deposition processes |
| US6871700B2 (en) | 2000-11-17 | 2005-03-29 | G & H Technologies Llc | Thermal flux regulator |
| US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
| US20070205101A1 (en) * | 2005-09-13 | 2007-09-06 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4802968A (en) * | 1988-01-29 | 1989-02-07 | International Business Machines Corporation | RF plasma processing apparatus |
| CN107814205B (en) * | 2017-08-08 | 2019-04-19 | 董惠娟 | Opposed type ultrasonic standing wave suspending conveyer and ultrasonic standing wave suspension and transmission method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3294661A (en) * | 1962-07-03 | 1966-12-27 | Ibm | Process of coating, using a liquid metal substrate holder |
| US4204936A (en) * | 1979-03-29 | 1980-05-27 | The Perkin-Elmer Corporation | Method and apparatus for attaching a target to the cathode of a sputtering system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1118136A (en) * | 1954-12-31 | 1956-05-31 | Process for coating material surfaces with layers of gallium, germanium and indium | |
| AT264246B (en) * | 1965-08-21 | 1968-08-26 | Siemens Ag | Process for the production of layers from two-component superconducting intermetallic compounds |
| US3530055A (en) * | 1968-08-26 | 1970-09-22 | Ibm | Formation of layers of solids on substrates |
-
1980
- 1980-02-26 US US06/124,679 patent/US4272355A/en not_active Expired - Lifetime
- 1980-11-26 DE DE8080107369T patent/DE3064449D1/en not_active Expired
- 1980-11-26 EP EP80107369A patent/EP0034654B1/en not_active Expired
-
1981
- 1981-01-13 JP JP56002759A patent/JPS5925031B2/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3294661A (en) * | 1962-07-03 | 1966-12-27 | Ibm | Process of coating, using a liquid metal substrate holder |
| US4204936A (en) * | 1979-03-29 | 1980-05-27 | The Perkin-Elmer Corporation | Method and apparatus for attaching a target to the cathode of a sputtering system |
Non-Patent Citations (4)
| Title |
|---|
| G. R. Giedd et al., "Indium Bond For Silicon Chip Attachment", IBM Technical Disclosure Bulletin, vol. 11, No. 2, (Jul. 1968), p. 117. * |
| J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 31-33. * |
| J. van Esdonk et al., "Joining a Sputtering Target and a Backing Plate", Research/Development, Jan. 1975, pp. 41-44. * |
| W. A. Dawson et al., "Indium-Lead-Indium Chip Joining", IBM Technical Disclosure Bulletin, vol. 11, No. 11, (Apr. 1969), p. 1528. * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448652A (en) * | 1981-12-07 | 1984-05-15 | Siemens Aktiengesellschaft | Device for the cathode sputtering of a metal |
| US4392939A (en) * | 1982-03-05 | 1983-07-12 | U.S. Philips Corporation | Magnetron cathode sputtering system |
| US4904362A (en) * | 1987-07-24 | 1990-02-27 | Miba Gleitlager Aktiengesellschaft | Bar-shaped magnetron or sputter cathode arrangement |
| EP0453147A1 (en) * | 1990-04-18 | 1991-10-23 | International Business Machines Corporation | Testing electronic components |
| EP0539954A1 (en) * | 1991-10-31 | 1993-05-05 | Siemens Solar Industries International, Inc. | Method and apparatus for sputtering of a liquid |
| US5679431A (en) * | 1993-10-08 | 1997-10-21 | Hmt Technology Corporation | Sputtered carbon overcoat in a thin-film medium and sputtering method |
| US6684759B1 (en) | 1999-11-19 | 2004-02-03 | Vladimir Gorokhovsky | Temperature regulator for a substrate in vapor deposition processes |
| US6287437B1 (en) | 2000-05-05 | 2001-09-11 | Alcatel | Recessed bonding of target for RF diode sputtering |
| US6871700B2 (en) | 2000-11-17 | 2005-03-29 | G & H Technologies Llc | Thermal flux regulator |
| US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
| US20070205101A1 (en) * | 2005-09-13 | 2007-09-06 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
| US7588668B2 (en) | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5925031B2 (en) | 1984-06-13 |
| JPS56130471A (en) | 1981-10-13 |
| EP0034654B1 (en) | 1983-07-27 |
| EP0034654A1 (en) | 1981-09-02 |
| DE3064449D1 (en) | 1983-09-01 |
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