US4375008A - Method for encapsulating components with cases and an encapsulation provided by the method - Google Patents

Method for encapsulating components with cases and an encapsulation provided by the method Download PDF

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Publication number
US4375008A
US4375008A US06/144,024 US14402480A US4375008A US 4375008 A US4375008 A US 4375008A US 14402480 A US14402480 A US 14402480A US 4375008 A US4375008 A US 4375008A
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Prior art keywords
case
hydrogen
tempering
base plate
nickel
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US06/144,024
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Joachim Dathe
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Siemens AG
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Siemens AG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K5/00—Gas flame welding
    • B23K5/12—Gas flame welding taking account of the properties of the material to be welded
    • B23K5/16—Gas flame welding taking account of the properties of the material to be welded of different metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating

Definitions

  • the invention relates to a method for encapsulating components in cases, wherein a gold wire is connected to an aluminum surface, and an encapsulation produced by the method.
  • a method for encapsulating components in cases which comprises connecting a gold wire to an aluminum surface, subsequently closing the case by welding a seam in a vacuum, and tempering the case in a hydrogen-containing atmosphere.
  • the component in which a gold wire is connected to an aluminum surface is first placed into a case. Then the case is closed by welding in a vacuum with a partial-pressure less than 10 -2 Torr. Therefore preferably nickel, or a nickel-compound (55 . . . 60%, Cu, 12 . . . 26% Ni, 19 . . . 31% Zn) is used, whereby, however, nickel has a hydrogen-permeability which is approximately 50 times greater.
  • a method which comprises disposing a hydrogen barrier layer on the case. Since copper and tin have a very low permeability for hydrogen, a copper-tin double layer, which is, for example, produced galvanically, is particularly advantageous as a barrier layer for hydrogen. Therefore, in accordance with a further mode of the invention, there is provided a method which comprises forming the hydrogen barrier layer out of at least one of copper and tin.
  • a method which comprises forming the barrier layer with a thickness of from 2 to 4 ⁇ m copper and from 6 to 10 ⁇ m tin.
  • the hydrogen-barrier layer can be omitted if the material of the case has a low hydrogen permeability at the highest permissible temperature for the component, which applies, for example for nickel-compound, copper and aluminum, so that the maximally-required inside hydrogen pressure in the case is maintained during the total expected lifetime of the component. Therefore, in accordance with an additional mode of the invention, there is provided a method which comprises forming the case out of a material with a low hydrogen permeability at the maximal temperature permitted for the component. In this case the diffusion of hydrogen into the case must be performed at a correspondingly higher temperature, or for a longer time, than for cases made of nickel, for example.
  • a method which comprises forming the case of one of the group consisting of nickel-compound, copper and aluminum or nickel. If the case can already be filled with hydrogen at the closing operation, which is possible in a friction-welding or soldering process, for example, then the hydrogen-barrier layer is also necessary, unless cases are used which themselves have a sufficient capability of blocking hydrogen.
  • a method which comprises adjusting the vacuum to less than 10 -2 Torr.
  • a method which comprises adjusting the temperature during tempering to between 150° and 350° C.
  • a method which comprises discontinuing the tempering when an interior hydrogen pressure of between 0.1 and 0.5 atmospheres is reached in the case.
  • an encapsulation for a component comprising a base plate, a case with a low hydrogen permeability at the maximal temperature permitted for the component, the case being vacuum welded to the base plate closing off the base plate and tempered in a hydrogen-containing atmosphere, a raised portion integral with the base plate inside the case, a plurality of lead-in lines passing through holes formed in the base plate and raised portion, glass beads disposed between the lead-in lines and the base plate and raised portion in the holes, and gold wires connected from the lead in lines to aluminum surfaces of the component in the case before the case is closed.
  • a hydrogen barrier layer disposed on the case formed of at least one of the group consisting of copper being 2 to 4 ⁇ m thick and tin being 6 to 10 ⁇ m thick, and wherein the case is formed of one of the group consisting of nickel-compound, copper, aluminum and nickel, the vacuum is less than 10 -2 Torr, and the tempering is done between 150° and 350° C. and is discontinued when an interior hydrogen pressure of between 0.1 and 0.5 atmospheres is reached in the case.
  • FIG. 1 is a diagrammatic cross-sectional view of a case according to the invention.
  • FIG. 2 is a cross-sectional view of a case taken along the line II--II in FIG. 1, in the direction of the arrows.
  • a cap 2 formed of an alloy of copper, nickel, and zinc, i.e. of nickel silver which is also known as German silver, is welded with a welding seam 3 to a base-plate 1 made of an alloy of iron-nickel or iron-nickel-cobalt.
  • the cap may also be made of nickel, copper or aluminum.
  • the base plate 1 has a raised portion 4 of the same material as the base plate 1.
  • Three lead-in lines or terminals 5,6, 7 are brought in through the base plate 1 and the raised portion 4, and are insulated from the base plate 1 and the raised portion 4 by glass beads 15, 16, and 17.
  • Disposed on the raised portion 4 is a semiconductor component such as a transistor 8.
  • the contacts 11 of the transistor 8 are connected with the lead-in lines 5,6, and 7 by gold wires 9.
  • the base plate 1 and the raised portion 4 can also be made of the same material as the cap 2.
  • the method of the invention is carried out as follows:
  • the gold wires 9 are connected with the aluminum contacts 11 of the transistor 8 by soldering.
  • the cap 2 is welded to the base plate 1 by means of the welding seam 3.
  • the case is tempered in a hydrogen-containing atmosphere at 150° to 350° C., until a hydrogen-interior pressure of 0.1 to 0.5 atm. is reached.
  • the welding is performed in a vacuum, which is less than 10 -2 Torr.
  • the case can be provided with a hydrogen-barrier layer 20 at its inside or outside, which preferably is a galvanically-produced copper-tin double layer.
  • the thickness of this barrier-layer is 2 to 4 ⁇ m for the copper, and 6 to 10 ⁇ m for the tin, thus 8 to 14 ⁇ m altogether.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

Method for encapsulating components in cases, which includes connecting a gold wire to an aluminum surface, subsequently closing the case by welding in a vacuum, and tempering the case in a hydrogen-containing atmosphere and an encapsulation produced by the method.

Description

The invention relates to a method for encapsulating components in cases, wherein a gold wire is connected to an aluminum surface, and an encapsulation produced by the method.
It has been pointed out already that the formation of undesired inter-metallic gold-aluminum-phases or inter-action in components, where a gold wire is connected to an aluminum surface, can be greatly reduced if hydrogen is used as the surrounding atmosphere during the temperature or heat treatments of the component. But in the conventional manufacturing methods, the welding of metal cases or metal-ceramic cases in a pure hydrogen atmosphere is difficult to perform.
Therefore, the heat treatment in hydrogen furnaces was performed up to now with open cases only. Until this time, cases filled with hydrogen have not been known.
The gold-aluminum-phases could therefore only be avoided heretofore if aluminum-aluminum or gold-gold connections were used with the disadvantages associated therewith.
It is accordingly an object of the invention to provide a method for encapsulating components with cases and an encapsulation produced by the method, which overcomes the hereinafore-mentioned disadvantages of the heretofore-known methods and devices of this genral type, wherein a gold wire can be connected to an aluminum surface without the undesired formation of an intermetallic-gold-aluminum-phase.
With the foregoing an other objects in view there is provided, in accordance with the invention, a method for encapsulating components in cases, which comprises connecting a gold wire to an aluminum surface, subsequently closing the case by welding a seam in a vacuum, and tempering the case in a hydrogen-containing atmosphere.
According to the invention the component in which a gold wire is connected to an aluminum surface is first placed into a case. Then the case is closed by welding in a vacuum with a partial-pressure less than 10-2 Torr. Therefore preferably nickel, or a nickel-compound (55 . . . 60%, Cu, 12 . . . 26% Ni, 19 . . . 31% Zn) is used, whereby, however, nickel has a hydrogen-permeability which is approximately 50 times greater.
By tempering the welded case in a hydrogen-containing atmosphere at 150° to 350° C., hydrogen is diffused into the case in a sufficient amount, for example, until an inner pressure of hydrogen of 0.1 to 0.5 atm inside the case is reached.
To prevent the hydrogen from diffusing out of the case if the case is heated later in an atmosphere or environment which is hydrogen-free, or hydrogen-poor, in accordance with another mode of the invention, there is provided a method which comprises disposing a hydrogen barrier layer on the case. Since copper and tin have a very low permeability for hydrogen, a copper-tin double layer, which is, for example, produced galvanically, is particularly advantageous as a barrier layer for hydrogen. Therefore, in accordance with a further mode of the invention, there is provided a method which comprises forming the hydrogen barrier layer out of at least one of copper and tin.
In accordance with an added mode of the invention, there is provided a method which comprises forming the barrier layer with a thickness of from 2 to 4 μm copper and from 6 to 10 μm tin.
The hydrogen-barrier layer can be omitted if the material of the case has a low hydrogen permeability at the highest permissible temperature for the component, which applies, for example for nickel-compound, copper and aluminum, so that the maximally-required inside hydrogen pressure in the case is maintained during the total expected lifetime of the component. Therefore, in accordance with an additional mode of the invention, there is provided a method which comprises forming the case out of a material with a low hydrogen permeability at the maximal temperature permitted for the component. In this case the diffusion of hydrogen into the case must be performed at a correspondingly higher temperature, or for a longer time, than for cases made of nickel, for example.
In accordance with yet another mode of the invention, there is provided a method which comprises forming the case of one of the group consisting of nickel-compound, copper and aluminum or nickel. If the case can already be filled with hydrogen at the closing operation, which is possible in a friction-welding or soldering process, for example, then the hydrogen-barrier layer is also necessary, unless cases are used which themselves have a sufficient capability of blocking hydrogen.
In accordance with yet a further mode of the invention, there is provided a method which comprises adjusting the vacuum to less than 10-2 Torr.
In accordance with yet an added mode of the invention, there is provided a method which comprises adjusting the temperature during tempering to between 150° and 350° C.
In accordance with yet an additional mode of the invention, there is provided a method which comprises discontinuing the tempering when an interior hydrogen pressure of between 0.1 and 0.5 atmospheres is reached in the case.
In accordance with the apparatus of the invention there is provided an encapsulation for a component, comprising a base plate, a case with a low hydrogen permeability at the maximal temperature permitted for the component, the case being vacuum welded to the base plate closing off the base plate and tempered in a hydrogen-containing atmosphere, a raised portion integral with the base plate inside the case, a plurality of lead-in lines passing through holes formed in the base plate and raised portion, glass beads disposed between the lead-in lines and the base plate and raised portion in the holes, and gold wires connected from the lead in lines to aluminum surfaces of the component in the case before the case is closed.
In accordance with a concomitnat feature of the invention there is provided a hydrogen barrier layer disposed on the case formed of at least one of the group consisting of copper being 2 to 4 μm thick and tin being 6 to 10 μm thick, and wherein the case is formed of one of the group consisting of nickel-compound, copper, aluminum and nickel, the vacuum is less than 10-2 Torr, and the tempering is done between 150° and 350° C. and is discontinued when an interior hydrogen pressure of between 0.1 and 0.5 atmospheres is reached in the case.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a method for encapsulating components with cases and an encapsulation provided by the method, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings, in which:
FIG. 1 is a diagrammatic cross-sectional view of a case according to the invention; and
FIG. 2 is a cross-sectional view of a case taken along the line II--II in FIG. 1, in the direction of the arrows.
Referring now to the figures of the drawing as a whole, it is seen that a cap 2, formed of an alloy of copper, nickel, and zinc, i.e. of nickel silver which is also known as German silver, is welded with a welding seam 3 to a base-plate 1 made of an alloy of iron-nickel or iron-nickel-cobalt. The cap may also be made of nickel, copper or aluminum. The base plate 1 has a raised portion 4 of the same material as the base plate 1. Three lead-in lines or terminals 5,6, 7 are brought in through the base plate 1 and the raised portion 4, and are insulated from the base plate 1 and the raised portion 4 by glass beads 15, 16, and 17. Disposed on the raised portion 4 is a semiconductor component such as a transistor 8. The contacts 11 of the transistor 8 are connected with the lead-in lines 5,6, and 7 by gold wires 9. Obviously, the base plate 1 and the raised portion 4 can also be made of the same material as the cap 2.
The method of the invention is carried out as follows:
First the gold wires 9 are connected with the aluminum contacts 11 of the transistor 8 by soldering. Then the cap 2 is welded to the base plate 1 by means of the welding seam 3. Finally, the case is tempered in a hydrogen-containing atmosphere at 150° to 350° C., until a hydrogen-interior pressure of 0.1 to 0.5 atm. is reached. The welding is performed in a vacuum, which is less than 10-2 Torr.
The case can be provided with a hydrogen-barrier layer 20 at its inside or outside, which preferably is a galvanically-produced copper-tin double layer. The thickness of this barrier-layer is 2 to 4 μm for the copper, and 6 to 10 μm for the tin, thus 8 to 14 μm altogether.

Claims (12)

There are claimed:
1. Encapsulation for a semiconductor component, comprising a base plate, a case with a low hydrogen permeability at the maximal temperature permitted for the component, said case being vacuum-welded to said base plate closing off said base plate and tempered in a hydrogen-containing atmosphere, a hydrogen atmosphere disposed in said case after tempering, a raised portion integral with said base plate inside said case, a plurality of lead-in lines passing through holes formed in said base plate and raised portion, glass beads disposed between said lead-in lines and said base plate and raised portion in said holes, and gold wires connected from said lead in lines to aluminum surfaces of the component in said case before said case is closed.
2. Encapsulation according to claim 1, including a hydrogen barrier layer disposed on said case to prevent hydrogen from diffusing out of said case after tempering, said hydrogen barrier layer being formed of at least one of the group consisting of copper being 2 to 4 μm thick and tin being 6 to 10 μm thick, and wherein said case is formed of one of the group consisting of nickel-compound, copper, aluminum and nickel, the vacuum is less than 10-2 Torr, and the tempering is done between 150° and 350° and is discontinued when an interior hydrogen pressure of between 0.1 and 0.5 atmospheres is reached in the case.
3. Method for encapsulating components in cases while preventing or reducing intermetallic gold-aluminum phases in semiconductor components, which comprises connecting a gold wire to an aluminum surface of a semiconductor component, subsequently closing the case by welding in a vacuum, and tempering the case in a hydrogen-containing atmosphere after welding, to develope a hydrogen atmosphere in the case by diffusion.
4. Method according to claim 1, which comprises disposing a hydrogen barrier layer on the case to prevent hydrogen from diffusing out of the case after tempering.
5. Method according to claim 3, which comprises forming the case out of a material with a low hydrogen permeability at the maximal temperature permitted for the component.
6. Method according to claim 4, which comprises forming the hydrogen barrier layer out of at least one of copper and tin.
7. Method according to claim 6, which comprises forming the barrier layer with a thickness of from 2 to 4 μm copper and from 6 to 10 μm tin.
8. Method according to claim 5, which comprises forming the case of one of the group consisting of a nickel-compound, copper and aluminum.
9. Method according to claim 3, which comprises adjusting the vacuum to less than 10-2 Torr.
10. Method according to claim 3, which comprises forming the case of one of the group consisting of nickel and a nickel-compound.
11. Method according to claim 3, which comprises adjusting the temperature during tempering to between 150° and 350° C.
12. Method according to claim 1, which comprises discontinuing the tempering when an interior hydrogen pressure of between 0.1 and 0.5 atmospheres is reached in the case.
US06/144,024 1979-05-04 1980-04-28 Method for encapsulating components with cases and an encapsulation provided by the method Expired - Lifetime US4375008A (en)

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DE2918106 1979-05-04
DE2918106A DE2918106C2 (en) 1979-05-04 1979-05-04 Method for welding and contacting a gold wire on an aluminum surface

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669650A (en) * 1983-10-13 1987-06-02 Moe Per H Method for joining tubular parts of metal by forge/diffusion welding
US4860942A (en) * 1987-11-30 1989-08-29 Ceradyne, Inc. Method for soldering void-free joints
US5438480A (en) * 1992-11-13 1995-08-01 Koito Manufacturing Co., Ltd. Printed circuit board and electronic parts to be mounted thereon
US5675883A (en) * 1994-04-29 1997-10-14 Diehl Gmbh & Co. Method of manufacturing a copper-nickel-silicon alloy casing
US20060006512A1 (en) * 2003-12-12 2006-01-12 The Boeing Company Hydrogen diffusion hybrid port and method of making
US6992251B1 (en) * 2004-08-31 2006-01-31 Sung Jung Minute Industry Co., Ltd. Rectification chip terminal structure
CN102672340A (en) * 2012-05-29 2012-09-19 李光 Gold wire ball ultrasonic welding process directly performed on aluminum product
US20140110838A1 (en) * 2012-10-22 2014-04-24 Infineon Technologies Ag Semiconductor devices and processing methods

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4655384A (en) * 1985-10-18 1987-04-07 The Babcock & Wilcox Company Method of fabricating fiber-reinforced metal composites
CN105345195B (en) * 2015-12-02 2017-06-23 哈尔滨工业大学 A kind of method of aluminum or aluminum alloy and other solder bonding metals

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188720A (en) * 1965-06-15 Method of sealing and joining and articles made thereby
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
US3340602A (en) * 1965-02-01 1967-09-12 Philco Ford Corp Process for sealing
US3743895A (en) * 1970-12-10 1973-07-03 Siemens Ag Copper plated base plate with nickel plated insert for semiconductor component housing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188720A (en) * 1965-06-15 Method of sealing and joining and articles made thereby
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
US3340602A (en) * 1965-02-01 1967-09-12 Philco Ford Corp Process for sealing
US3743895A (en) * 1970-12-10 1973-07-03 Siemens Ag Copper plated base plate with nickel plated insert for semiconductor component housing

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Amer. Soc. for Metals, Metals Handbook, (1948 Ed.), p. 1151. *
Hydrogen in Metals, (1948), by Donald P. Smith. *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669650A (en) * 1983-10-13 1987-06-02 Moe Per H Method for joining tubular parts of metal by forge/diffusion welding
US4860942A (en) * 1987-11-30 1989-08-29 Ceradyne, Inc. Method for soldering void-free joints
US5438480A (en) * 1992-11-13 1995-08-01 Koito Manufacturing Co., Ltd. Printed circuit board and electronic parts to be mounted thereon
US5675883A (en) * 1994-04-29 1997-10-14 Diehl Gmbh & Co. Method of manufacturing a copper-nickel-silicon alloy casing
US20060006512A1 (en) * 2003-12-12 2006-01-12 The Boeing Company Hydrogen diffusion hybrid port and method of making
US7205179B2 (en) * 2003-12-12 2007-04-17 The Boeing Company Hydrogen diffusion hybrid port and method of making
US6992251B1 (en) * 2004-08-31 2006-01-31 Sung Jung Minute Industry Co., Ltd. Rectification chip terminal structure
CN102672340A (en) * 2012-05-29 2012-09-19 李光 Gold wire ball ultrasonic welding process directly performed on aluminum product
CN102672340B (en) * 2012-05-29 2014-08-06 李光 Gold wire ball ultrasonic welding process directly performed on aluminum product
US20140110838A1 (en) * 2012-10-22 2014-04-24 Infineon Technologies Ag Semiconductor devices and processing methods

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JPS55150256A (en) 1980-11-22
DE2918106C2 (en) 1983-02-24
DE2918106A1 (en) 1980-11-06

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