USRE45110E1 - MPGA products based on a prototype FPGA - Google Patents
MPGA products based on a prototype FPGA Download PDFInfo
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- USRE45110E1 USRE45110E1 US13/411,486 US201213411486A USRE45110E US RE45110 E1 USRE45110 E1 US RE45110E1 US 201213411486 A US201213411486 A US 201213411486A US RE45110 E USRE45110 E US RE45110E
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
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- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
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- H—ELECTRICITY
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- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
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Definitions
- the present invention relates to multi-dimensional integrated circuits. More specifically it relates to design conversion from a field programmable device (FPGA) to different density metal programmable application specific devices (MPGA) to reduce cost and improve performance, power and reliability.
- FPGA field programmable device
- MPGA metal programmable application specific devices
- IC integrated circuit
- ASIC application specific integrated circuit
- NRE Non Recurring Engineering
- ASICs serve only specific applications and are custom built for high volume and low cost applications.
- MPGA Metal Programmable Gate Arrays
- FPGAs offer the advantages of low non-recurring engineering costs, fast turnaround (designs can be placed and routed on an FPGA in typically a few minutes to a few hours), and low risk since designs can be easily amended late on in the product design cycle. It is only for high volume production runs that there is a cost benefit in using the more traditional approaches. However, the conversion from an FPGA implementation to an MPGA or ASIC implementation typically requires a complete redesign. Such redesign is undesirable in that the FPGA design effort is wasted.
- an ASIC or MPGA has hard-wired logic connections, identified during the chip design phase, and need no configuration memory cells. They further require much less wires to connect logic. This is a large chip area and cost saving for the ASIC. Smaller ASIC die sizes lead to better performance. A full custom ASIC also has customized logic functions which take less gate counts compared to PLD and FPGA configurations of the same functions. Thus, an ASIC is significantly smaller, faster, cheaper and more reliable than an equivalent gate-count FPGA. The trade-off is between time-to-market (PLD and FPGA advantage) versus low cost and better reliability (ASIC pr MPGA advantage).
- a three-dimensional semiconductor device with two selectable manufacturing configurations includes a first module layer having a plurality of circuit blocks; and a second module layer formed substantially above the first module layer, wherein in a first selectable configuration a plurality of memory circuits are formed to store instructions to control a portion of the circuit blocks, and wherein in a second selectable configuration a predetermined conductive pattern is formed in lieu of the memory circuit to control substantially the same portion of the circuit blocks.
- Implementations of the above aspect may include one or more of the following.
- a third module layer can be formed substantially above the first module layer, wherein interconnect and routing signals are formed to connect the circuit modules within the first and second module layers.
- the second module layer in its first configuration can contain isolated through connections to connect the first module layer to the third module layer.
- a third module layer can be formed between the first and second module layers, wherein interconnect and routing signals are formed to connect the circuit modules within the first and second module layers.
- the first selectable configuration forms a programmable logic device (PLD) with one or more digital circuits formed on the first module layer; one or more programmable logic blocks formed on the first module layer and electrically coupled to the digital circuits; one or more memory blocks formed on the first module layer and electrically coupled to the digital circuits; one or more configurable memory elements formed on the second module layer and electrically coupled to the programmable logic blocks to customize the programmable content of the PLD; and one or more interconnect and routing signals formed in a third module layer, electrically coupled to first and second module layers to provide the functionality of the PLD.
- PLD programmable logic device
- the second selectable configuration forms an Application Specific Integrated Circuit (ASIC) with one or more digital circuits formed on the first module layer; one or more programmable logic blocks formed on the first module layer and electrically coupled to the digital circuits; one or more memory blocks formed on the first module layer and electrically coupled to digital circuits; one or more predetermined connections formed on the second module layer and electrically coupled to the programmable logic blocks to customize the programmable content; and one or more interconnect and routing signals formed in a third module layer and electrically coupled to first and second module layers.
- the second module layer can be generic and user configurable to program and re-program to alter the functional response and performance of the PLD.
- the predetermined conductive pattern can be positioned substantially above the digital circuits.
- the predetermined conductive pattern can also be integrated in the first module layer or alternatively can be integrated in the third module layer. For every given memory pattern of the second module layer in the first configuration, a unique predetermined connection pattern exists in the second configuration to substantially match logic customization.
- One or more of the circuit blocks within the first module layer can maintain substantially identical timing characteristics under both configurations of second module layer logic control.
- the memory circuit can include one or more thin film devices such as thin film transistors (TFTs), resistors and capacitors.
- the replaceable memory can be selected from the group consisting of fuse links, antifuse capacitors, SRAM cells, DRAM cells, metal optional links, EPROM cells, EEPROM cells, Flash cells, and Ferro-electric elements.
- the digital circuit can include a third-party IP core.
- the digital circuit includes a processor capable of executing software logic instructions and other programmable logic blocks, wherein the programmable logic block is selected from one or more of a pass gate logic, multiplexer logic, truth table logic, or an AND/OR logic.
- the module layer one can include a substrate layer, n-well & p-well layers, field isolation regions, NMOS & PMOS gate, drain, source regions of transistors built on substrate, N+ & P+ diodes, resistors and capacitors built on substrate, gate oxide, gate poly, salicided regions, inter layer dielectric and contacts.
- a programmable logic device in another aspect, includes one or more digital circuits formed on a substrate; and a non-planar circuit electrically coupled to the digital circuits, the non-planar circuit being either a memory constructed to store data to define the logic outputs of the digital circuits to fabricate a field programmable gate array (FPGA) or a conductive pattern constructed to define the logic outputs of the digital circuits to fabricate an application specific integrated circuit (ASIC), wherein the memory and the conductive pattern options have substantially matching functionality timing characteristics.
- FPGA field programmable gate array
- ASIC application specific integrated circuit
- Implementations of the above aspects may include one or more of the following.
- the IC product is re-programmable in its initial stage with turnkey conversion to an ASIC.
- the IC has the end ASIC cost structure and FPGA re-programmability.
- the IC product offering occurs in two phases: the first stage is a generic FPGA that has re-programmability containing a programmable module, and the second stage is a timing-exact ASIC with the entire programmable module replaced by 1 to 2 customized hard-wire masks.
- a programmable logic device in another aspect, includes a plurality of programmable logic cells built on a semiconductor substrate layer; and a plurality of interconnect wires constructed above said of programmable logic cells; and either configuration memory circuits or metal-wires constructed above said of programmable logic cells to program the logic functions and interconnect wire pattern; wherein a single larger FPGA can be used non-planar circuit being either a memory constructed to store data to define the logic outputs of the digital circuits to fabricate a field programmable gate array (FPGA) or a conductive pattern constructed to define the logic outputs of the digital circuits to fabricate an application specific integrated circuit (ASIC), wherein the memory and the conductive pattern options have substantially matching functionality and timing characteristics.
- FPGA field programmable gate array
- ASIC application specific integrated circuit
- Implementations of the above aspects may include one or more of the following.
- the IC product is re-programmable in its initial stage with turnkey conversion to an ASIC.
- the IC has the end ASIC cost structure and FPGA re-programmability.
- the IC product offering occurs in two phases: the first stage is a generic FPGA that has re-programmability containing a programmable module, and the second stage is a timing-exact ASIC with the entire programmable module replaced by 1 to 2 customized hard-wire masks.
- a smaller mask programmable gate array (MPGA) device derived from a larger field programmable gate array (FPGA), comprising: a layout of transistors and a plurality of interconnect layers identical to a region of the FPGA; and input/output pads matching a subset of the input/output pads of the FPGA; wherein, a design that is mapped to said region of the FPGA device using said subset of input/output pads by a user programmable means can be identically mapped to the MPGA by a hard-wire circuit.
- MPGA mask programmable gate array
- Such a gate array further comprises a mask programmable metal-circuit in lieu of a user programmable configuration circuit of the FPGA; and a logic output to input/output pad connection in lieu of a logic output to a register at the boundary of said region to an input/output pad connection of the FPGA.
- the prototype FPGA product is user re-programmable with easy bit-stream compatible turnkey design-conversion to one or more production MPGAs.
- the selected production MPGA has the low ASIC cost structure while the prototype FPGA has the re-programmability.
- the initial FPGA product is pre-designed with the capability to port designs to a varying number of smaller MPGAs.
- the FPGA has a core region comprising programmable circuits and an input/output (I/O) pad region.
- the I/O region may be in the perimeter of the die, surrounding the core.
- the I/O region may be on two sides of the core region.
- the FPGA core comprises a plurality of smaller regions: a first region, and a second region larger than the first region.
- a plurality of MPGAs is constructed; each MPGA core having an exact circuit layout of a said region within the FPGA core.
- Each MPGA core has a set of input/output pads surrounding the core, or on some sides of the core similar to the FPGA.
- the I/O pads in the MPGA are a subset of I/O pads of the FPGA.
- Logic blocks at core edges and I/O pad coupling are similarly constructed in the FPGA and MPGA.
- Logic blocks at the region boundary of the FPGA are not adjacent to the I/O pads, whereas in the MPGA the logic blocks are adjacent to I/O pads.
- a software tool and placement of registers at region boundaries is used to account for signal timing variation.
- the subset of I/O pads is pre-assigned in the FPGA.
- the user has the option of selecting one of plurality of these regions available to place and route designs, including the entire FPGA.
- Each region offers a certain gate density of logic, user-memory and input/output pad connections to the user.
- the user is able to place and route designs in significantly smaller portions of the FPGA, then map those designs into a matching MPGA of lower cost.
- the elected region within the FPGA increases, so does the user memory, and the I/O pads assigned to that region.
- Each region within the FPGA may comprise one or more boundaries. Each boundary may comprise one or more registers. Some I/O pads may be directly coupled to logic blocks in the FPGA and in the MPGA. Within a region boundary of FPGA, logic outputs do not directly couple to I/O pads.
- Such logic outputs are made to couple to a said register at the boundary.
- These registers may be part of programmable logic blocks of the FPGA, or special registers placed to tie a logic output that has to couple to an I/O pad not adjacent to the region boundary.
- a software tool may identify a set of registers at the boundary account for I/O connections.
- a logic output within the FPGA at the region boundary is first routed to a register at the boundary by the software tool and then to an I/O structure.
- the timing is pre-characterized for such a connection in the FPGA.
- no such register is provided, and the logic output is directly coupled to the adjacent I/O.
- the timing without a register is also pre-characterized.
- the I/O timing is adjusted by the software tool.
- Advantages of the IC may include one or more of the following.
- a series product families can be provided with a modularized programmable element in an FPGA version followed by a turnkey custom ASIC with the same base die with 1-2 custom masks.
- the vertically integrated programmable module does not consume valuable silicon real estate of a base die.
- the design and layout of these product families adhere to removable module concept: ensuring the functionality and timing of the product in its FPGA and ASIC canonicals.
- These IC products can replace existing PLD and FPGA products and compete with existing Gate Arrays and ASIC's in cost and performance. Such products offer a more reliable and lower cost ASIC design conversion from the initial PLD and FPGA.
- FIG. 1 shows a cross sectional view of a first embodiment of an integrated circuit.
- FIG. 2 shows a cross sectional view of a second embodiment of an integrated circuit.
- FIG. 3 shows a cross sectional view of a third embodiment of an integrated circuit.
- FIG. 4 shows a cross sectional view of a fourth embodiment of an integrated circuit.
- FIG. 5 shows an exemplary AND-OR PLD Architecture.
- FIG. 6 shows an exemplary AND-OR array gate realization of PLD.
- FIG. 7 shows one EEPROM implementation of a P-Term logic array.
- FIG. 8 shows P-term configuration for SRAM/hard-wired PLD architecture.
- FIG. 9 shows an exemplary pass-gate logic.
- FIG. 10 shows an exemplary 4-Input logic MUX.
- FIG. 11 shows an exemplary 2-Input Truth Table.
- FIG. 12 shows a logic tree implementation of a 4-Input Truth Table.
- FIG. 13 shows an exemplary 6T SRAM.
- FIG. 14 shows pass gate transistor logic controlled by SRAM.
- FIG. 15 shows one embodiment of a 5 ⁇ 6 switch matrix.
- FIG. 16 shows pass gate controlled by Vcc (power) or Vss (ground)
- FIG. 17 shows the 5 ⁇ 6 switch matrix
- FIGS. 18A , 18 B, 18 C, 18 D show a first embodiment of a prototype FPGA that comprises three regions, each region facilitating a different MPGA conversion for production.
- FIGS. 19A , 19 B, 19 C, 19 D show a second embodiment of a prototype FPGA that comprises three regions, each region facilitating a different MPGA conversion for production.
- wafer and substrate used in the following description include any structure having an exposed surface with which to form the integrated circuit (IC) structure of the invention.
- substrate is understood to include semiconductor wafers.
- substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, SOI material as well as other semiconductor structures well known to one skilled in the art.
- conductor is understood to include semiconductors, and the term insulator is defined to include any material that is less electrically conductive than the materials referred to as conductors. The following detailed description is, therefore, not to be taken in a limiting sense.
- module layer includes a structure that is fabricated using a series of predetermined process steps.
- the boundary of the structure is defined by a first step, one or more intermediate steps, and a final step.
- the resulting structure is formed on a substrate.
- layout refers to a set of geometries arranged to define a masking layer.
- the term configuration circuit includes one or more configurable elements and connections that can be programmed for controlling one or more circuit blocks in accordance with a predetermined user-desired functionality.
- the configuration circuits include a plurality of memory circuits to store instructions to configure an FPGA.
- the configuration circuits include a first selectable configuration where a plurality of memory circuits is formed to store instructions to control one or more circuit blocks.
- the configuration circuits include a second selectable configuration with a predetermined conductive pattern formed in lieu of the memory circuit to control substantially the same circuit blocks.
- the memory circuit includes elements such as diode, transistor, resistor, capacitor, metal link, among others.
- the memory circuit also includes thin film elements.
- the configuration circuits include a predetermined conductive pattern, via, resistor, capacitor or other suitable circuits formed in lieu of the memory circuit to control substantially the same circuit blocks.
- the term “horizontal” as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate.
- the term “vertical” refers to a direction perpendicular to the horizontal direction as defined above. Prepositions, such as “on”, “side”, “higher”, “lower”, “over” and “under” are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate.
- FIG. 1 shows a cross sectional view of a first embodiment of an integrated circuit that can be selectably fabricated as either an FPGA or an ASIC.
- a three-dimensional semiconductor device 100 is shown.
- the device 100 includes a first module layer 102 having a plurality of circuit blocks 104 embedded therein.
- the device 100 also includes a second module layer 106 formed substantially above the first module layer 102 .
- One or more configuration circuits 108 are formed to store instructions to control a portion of the circuit blocks 104 .
- circuits 108 are programmable to build FPGA products.
- circuits 108 are wire connections to build ASIC products.
- wiring/routing circuits 112 are formed on a third layer 110 above the second layer 106 . Circuits 112 connect to both circuits 104 and 108 to complete the functionality of the PLD.
- FIG. 2 shows a cross sectional view of a second embodiment of an integrated circuit that can be selectably fabricated as either an FPGA or an ASIC.
- a three-dimensional semiconductor device 120 is shown.
- the device 120 includes a first module layer 122 having a plurality of circuit blocks 124 embedded therein.
- the device 120 also includes a second module layer 126 formed substantially above the first module layer 122 that includes wiring and/or routing circuitry 128 , and a third module layer 130 formed substantially above the second module layer 126 that includes configuration circuits 132 .
- circuits 132 are programmable to build FPGA products.
- circuits 132 are wire connections to build ASIC products.
- the wiring/routing circuitry 128 is electrically connected to the circuit blocks 124 and to configuration circuits 132 in a third module layer 130 .
- the configuration circuits 132 store instructions to control a portion of the circuit blocks 124 .
- FIG. 3 shows a third embodiment which is substantially similar to the embodiment of FIG. 2 .
- a fourth layer 140 having wiring/routing circuitry 142 is position above the third layer 130 .
- the wiring/routing circuitry 142 is electrically connected to one of the following: one or more circuit blocks 124 , one or more wiring/routing circuitry 128 , and one or more configuration circuits 132 .
- FIG. 4 shows one implementation where the configuration memory element is SRAM.
- silicon transistors 150 are deposited on a substrate.
- a module layer of removable SRAM memory cells 152 are positioned above the silicon transistors 150 , and a module layer of interconnect wiring or routing circuit 154 is formed above the removable memory cells 152 .
- SRAM cells 152 are programmable to build FPGA products.
- cells 152 are replaced with wire connections to build ASIC products.
- the design adheres to a hierarchical layout structure. As shown in FIG. 4 , the SRAM cell module is sandwiched between the single crystal device layers below and the metal layers above electrically connecting to both. It also provides through connections “A” for the lower device layers to upper metal layers.
- the SRAM module contains no switching electrical signal routing inside the module. All such routing is in the layers above and below. Most of the programmable element configuration signals run inside the module. Upper layer connections to SRAM module “C” are minimized to Power, Ground and high drive data wires. Connections “B” between SRAM module and single crystal module only contain logic level signals and replaced later by Vcc and Vss wires to build the ASIC. Most of the replaceable programmable elements and its configuration wiring is in the “replaceable module” while all the devices and end ASIC wiring is outside the “replaceable module”. In other embodiments, the replaceable module could exist between two metal layers or as the top most layer satisfying the same device and routing constraints.
- Fabrication of the IC also follows a modularized device formation. Formation of transistors 150 and routing 154 is by utilizing a standard logic process flow used in the ASIC fabrication. Extra processing steps used for memory element 152 formation are inserted into the logic flow after circuit layer 150 is constructed. A full disclosure of the vertical integration of the TFT module using extra masks and extra processing is in the co-pending incorporated by reference applications discussed above.
- the custom wire connections can be combined with the contact in module- 1 and metal- 1 in module- 2 processing.
- the custom wire connections can be an extra metal- 1 , via- 1 insertion compatible with logic processing. Removal of the SRAM module provides a low cost standard logic process for the final ASIC construction with the added benefit of a smaller die size. The design timing is unaffected by this migration as lateral metal routing and silicon transistors are untouched. Software verification and the original FPGA design methodology provide a guaranteed final ASIC solution to the user. A full disclosure of the ASIC migration from the original FPGA is provided in the body of this discussion.
- the third module layer is formed substantially above the first and second module layers, wherein interconnect and routing signals are formed to connect the circuit modules within the first and second module layers.
- the third module layer can be formed substantially below the first and second module layer with the interconnect and routing signals formed to connect the circuit modules within the first and second module layers.
- the third and fourth module layers positioned above and below the second module layer respectively, wherein the third and fourth module layers provide interconnect and routing signals to connect the circuit modules within the first and second module layers.
- a first module layer is fabricated having a plurality of circuit blocks formed on a first plane.
- the programmable multi-dimensional semiconductor device also includes a second module layer formed on a second plane.
- a plurality of configuration circuits is then formed to store instructions to control a portion of the circuit modules.
- a programmable logic device in another embodiment, includes one or more digital circuits formed on a substrate; and a non-planar circuit electrically coupled to the digital circuits, the non-planar circuit being either a memory constructed to store data to define the logic outputs of the digital circuits to fabricate a field programmable gate array (FPGA) or a conductive pattern constructed to define the logic outputs of the digital circuits to fabricate an application specific integrated circuit (ASIC), wherein the memory and the conductive pattern options have substantially matching functionality timing characteristics.
- FPGA field programmable gate array
- ASIC application specific integrated circuit
- the design/conversion of the FPGA to the ASIC is explained next.
- the larger and very complex FPGA designs are done with computer-aided design (CAD) tools.
- a design specification is converted to a logical entry format for a Design Entry CAD tool.
- the abstract logic functions are described using Hardware Description Language (HDL, VHDL) or Schematic Diagrams.
- HDL, VHDL Hardware Description Language
- the design entry is compiled to extract the netlist. This netlist is used to synthesize the logic to be placed in the FPGA. Design capture so far is independent of the FPGA platform.
- a customized Place and Route (fitter) software tool is used to select the logic gates and to make the required connections in a chosen FPGA.
- the design placed and routed inside the FPGA is simulated using test vectors to verify the performance and functionality.
- the optimized design database specifies how the FPGA programmable resources are utilized to achieve the original design objectives.
- a configuration bitstream is generated by a tool commonly referred to as a bitstream compiler. All the logic and routing customization specific to the design is contained in this bitstream, which is a binary representation of every single configuration device in the FPGA. This is also referred to as a bitmap when the bitstream is mapped to the image of configuration elements.
- the defining binary data in the bitstream represent the ON/OFF states of the configurable switches that control logic blocks, IO blocks and interconnection in the FPGA.
- the configuration bitstream either may be downloaded to the logic array thereby configuring the device or the bitstream may be saved onto disk.
- the FPGA contains non volatile memory elements, a programmer is used to program the bitmap into the device.
- Some non volatile memory (NVM) elements such as EEPROM and Flash lend to in system programmability (ISP), allowing programming inside the design board via JTAG instructions.
- ISP system programmability
- SRAM based FPGA allow ISP, but need a NVM content outside the device to hold the bitstream.
- These B contacts represent configuration element control of the logic blocks. There is a one to one matching between these B contacts and the bitmap generated for the design, as every configuration element is represented in both.
- Bitstream ones represent B contacts at Vcc, while bitstream zeros represent B contacts at Vss.
- the bitstream can be automatically mapped to contact B file to convert those to Vcc and Vss hard connections.
- the contacts B are in the CAD database that generates the physical mask for wafer processing. This technique provides an error free software conversion of the bitstream to a had-wire mask.
- Vcc and Vss resources By appropriate pre-allocation of Vcc and Vss resources above the B contacts, one could conceivably generate the ASIC with only one custom mask, a considerable savings in expensive mask costs. All the C contacts in the hard mask are simply omitted as no configuration elements exist, while all the A contacts are retained.
- the conversion does not result in a new placement and routing configuration that is different from the previous FPGA design.
- the conversion does not result in a change to the logic gates in module layer- 1 or the lateral wire routing in module layer- 3 .
- the vertical contact height change is negligible in the gate and wire delay components of logic propagation.
- Logic gate timing is not affected by control options between SRAM output or Vcc/Vss. The timing is maintained identical in this FPGA to ASIC conversion. Furthermore, this conversion can be made by the FPGA supplier, with no engineering overhead, saving valuable design resources at both end user and manufacturing sites.
- the final hard mask ASIC has no soft errors (no SRAM bits to flip), better reliability as fewer processing steps and fewer hard wires (one connection to replace 6-transistors) are used, and provide a secure environment against “bitstream piracy”—a technique of stealing designs by extracting the bitstream from FPGAs.
- circuit blocks 104 the configuration circuit 108 , and the wiring and/or routing circuit 112 in FIG. 1 are detailed.
- circuit blocks 104 A variety of digital or analog circuits can be used in circuit blocks 104 . These circuit blocks include programmable logic blocks to allow user customization of logic. In one embodiment, programmable logic blocks are provided to respond to input data signals. The programmable logic blocks develop corresponding complete or partial output logic signals. Registers are used to store the output logic signals and either outputting them to output terminals or returning them as inputs to additional programmable logic blocks. The registers themselves can be programmable, allowing those to be configured such as T flip-flops, JK flip-flops, or any other register. The logic blocks may contain no registers, or the registers may be programmed to be by-passed to facilitate combinational logic implementation.
- the programmable logic block can be selected from one of a pass gate logic, a multiplexer logic, a truth table logic, or an AND/OR logic.
- FIG. 5 shows an exemplary AND-OR PLD Architecture.
- AND and OR arrays 202 and 204 contain user configurable programmable elements.
- FIG. 6 shows an exemplary AND-OR array gate realization of a three input, four P-term, four output PLD.
- the AND and the OR array 210 - 212 are shown programmed to a specific pattern.
- the circuit block 104 contains a RAM/ROM logic block consisting of “logic element tree” or “P-Term logic array” blocks that perform logic functions.
- FIG. 7 shows one such NAND EEPROM implementation of a P-Term in NAND-NOR logic array
- FIG. 8 shows the same P-term configuration for either SRAM, or hardwired PLD architectures.
- FIG. 7 shows two mirrored outputs P 1 and P 2 .
- an AND gate 232 receives signals from pass transistors 222 , 224 , 228 and 230 .
- the pass transistor 222 is controlled by block 220 shown in the dashed circle, while the pass transistor 228 is controlled by block 226 shown inside the dashed circle.
- the upper half of FIG. 8 includes an AND gate 252 that receives inputs from pass transistors 242 , 244 , 248 and 250 , respectively.
- FIG. 9 shows an exemplary pass-gate logic 260 connecting one input to one output.
- the NMOS pass gate voltage level S 0 determines an ON and OFF connection.
- O I 0 *S 0 +I 1 *S 1 +I 2 *S 2 +I 3 *S 3 .
- the MUX is constructed by combining four NMOS pass gate logic elements 280 - 286 shown in FIG. 9 .
- the truth table logic states are represented by S 0 , S 1 , S 2 and S 3 .
- the realization is done through six inverters collectively designated 250 and eight pass transistors collectively designated 260 .
- Logic states are stored in 4 programmable registers.
- FIG. 12 shows a logic tree constructed with five 2-input truth table logic blocks 320 - 328 to perform a full four input truth table.
- a four input truth table has 16 possible logic states S 0 , S 1 , . . . , S 15 .
- this logic tree construction requires 2 N logic states, and 2 (N ⁇ 1) branches in the logic tree.
- N ⁇ 1 branches in the logic tree.
- a full truth table realization is less efficient compared to a partial product term AND-OR array realization.
- the programmable logic block can be a programmable microprocessor block.
- the microprocessor can be selected from third party IP cores such as: 8051, Z80, 68000, MIPS, ARM, and PowerPC. These microprocessor architectures include superscalar, Fine Grain Multi-Threading (FGMT) and Simultaneous Multi-Threading (SMT) that support Application Specific Packet Processing (ASPP) routines.
- FGMT Fine Grain Multi-Threading
- SMT Simultaneous Multi-Threading
- APN Application Specific Packet Processing
- PNI Programmable Network Interface
- the processor can contain hardware and software configurability. Hardware upgradeability can be greatly enhanced in microprocessors embedded in PLD's by making use of the available logic content of the PLD device.
- Programmable features can include varying processor speed, cache memory system and processor configuration, enhancing the degree of Instruction Level Parallelism (ILP), enhancing Thread level parallelism (TLP). Such enhancements allow the user to optimize the core processor to their specific application. Cache parameters such as access latency, memory bandwidth, interleaving and partitioning are also programmable to further optimize processor performance and minimize cache hit miss rates.
- the processor block can be a Very Long Instruction Word (VLIW) processor to handle multimedia applications.
- VLIW Very Long Instruction Word
- the processor block can include a cache controller to implement a large capacity cache as compared with an internal cache.
- the programmable logic block can also contain a digital signal processor (DSP), which is a special purpose processor designed to optimize performance for very high speed digital signal processing encountered in wireless and fiber-optic networks.
- DSP digital signal processor
- the DSP applications can include programmable content for cache partitioning, digital filters, image processing and speech recognition blocks. These real-time DSP applications contain high interrupt rates and intensive numeric computations best handled by hardware blocks. In addition, the applications tend to be intensive in memory access operations, which may require the input and output of large quantities of data.
- the DSP cache memory may be configured to have a “Harvard” architecture with separate, independent program and data memories so that the two memories may be accessed simultaneously.
- This architecture permits an instruction and an operand to be fetched from memory in a single clock cycle.
- a modified Harvard architecture utilizes the program memory for storing both instructions and operands to achieve full memory utilization.
- the program and data memories are often interconnected with the core processor by separate program and data buses.
- conflicts may arise in fetching data with the next instruction. Such conflicts have been resolved in prior art for DSPs by providing an instruction cache to store conflicting instructions for subsequent program execution.
- programmable logic block can contain software programmability. These software functions are executed in DSP, ARM, or MIPS type inserted IP cores, or an external host CPU. Accelerators connected by a configurable SRAM switching matrix enhance the computation power of the processors.
- the microprocessor has local permanent SRAM memory to swap, read, and write data.
- the switch matrix is pre-designed to offer both hard-wire and programmable options in the final ASIC.
- the circuit block 104 can be a functional block that performs well-defined, commonly-needed function, such as special D/A or A/D converter, standard bus interface, or such block that implements special algorithms such as MPEG decode.
- the special algorithms implemented can be hardware versions of software. For example, algorithms relating to digital radio or cellular telephone such as WCDMA signal processing can be implemented by the functional block.
- Other functional blocks include PCI, mini-PCI, USB, UART blocks that can be configured by specifying the SRAM logic blocks.
- the circuit block 104 can be memory such as a register file, cache memory, static memory, or dynamic memory.
- a register file is an array of latches that operate at high speed. This register length counter may be programmable by the user.
- a cache memory has a high access throughput, short access latency and a smaller capacity as compared with main memory.
- the cache memory may be programmable to partition between the different requirements of the system design. One such need is the division between L 1 and L 2 cache requirements for networking applications.
- the memory can also be static random access memory or (SRAM) device with an array of single port, or multi-port addressable memory cells. Each cell includes a four transistor flip-flop and access transistors that are coupled to input/output nodes of the flip-flop.
- SRAM static random access memory
- Data is written to the memory cell by applying a high or low logic level to one of the input/output nodes of the flip-flop through one of the access transistors. When the logic level is removed from the access transistor, the flip-flop retains this logic level at the input/output node. Data is read out from the flip-flop by turning on the access transistor.
- the memory can also be dynamic random access memory (DRAM).
- DRAM dynamic random access memory
- a DRAM cell consists of one transistor and a capacitor. A word line turns on/off the transistor at the time of reading/writing data stored in the capacitor, and the bit line is a data input/output path. DRAM data is destroyed during read, and refresh circuitry is used to continually refresh the data. Due to the low component count per bit, a high density memory device is achieved.
- the circuit block 104 can be an intellectual property (“IP”) core which is reusable for licensing from other companies or which is taken from the same/previous design.
- IP intellectual property
- core-based design individual cores may be developed and verified independently as stand-alone modules, particularly when IP core is licensed from external design source.
- IP blocks connect via a programmable switching matrix to each other and other programmable logic.
- the hardware logic block insertion to any position in a logic sequence is done through the configurable logic matrix.
- These hardware logic blocks offer a significant gate count reduction on high gate count frequently used logic functions, and the user does not require generic “logic element” customization. In both cases, the user saves simulation time, minimize logic gate count, improve performance, reduce power consumption and reduce product cost with pre-defined IP blocks.
- the switch matrix is replaced by hardwires in the final ASIC.
- the circuit blocks 104 can also be an array of programmable analog blocks.
- the analog blocks include programmable PLL, DLL, ADC and DAC.
- each block contains an operational amplifier, multiple programmable capacitors, and switching arrangements for connecting the capacitors in such as a way as to perform the desired function.
- Switched capacitor filters can also be used to achieve an accurate filter specification through a ratio of capacitors and an accurate control of the frequency of a sampling clock.
- Multiple PLL's can be programmed to run at different frequencies on the same chip to facilitate SoC applications requiring more than one clock frequency.
- the circuit blocks 104 also contain data fetch and data write circuitry required to configure the configuration circuits 108 . This operation may be executed by a host CPU residing in the system, or the PLD device itself. During power up, these circuits initialize and read the configuration data from an outside source, either in serial mode or in parallel mode. The data is stored in a predefined word length locally and written to the configurability allocation. The programmed configuration data is verified against the locally stored data and a programming error flag is generated if there is a mismatch. These circuits are redundant in the conversion of the PLD to an ASIC. However, these circuits are used in both FPGA and ASIC for test purposes, and has no cost penalty. A pin-out option has a “disable” feature to disconnect them for the customer use in the FPGA and ASIC.
- Configuration circuits 108 provide active circuit control over digital circuits 104 .
- One embodiment of the configuration circuit includes an array of memory elements. The user configuration of this memory amounts to a specific bitmap of the programmable memory in a software representation.
- Suitable memory elements include volatile or non volatile memory elements.
- NVM non-volatile memory
- configurable data is held in one of metal link fuse, anti-fuse, EPROM, Flash, EEPROM memory element, or ferro-electric elements. The first two are one time programmable (OTP), while the last four can be programmed multiple times.
- OTP one time programmable
- Flash & EEPROM's lend to in-system programmability (ISP).
- the configurable data storage can be SRAM cells or DRAM cells. With DRAM cells, the data requires constant refresh to prevent losses from leakages. Additionally, one or more redundant memory cells controlling the same circuit block can be used to enhance device yield.
- the components of the memory element array can be a resistor, capacitor, transistor or a diode.
- a memory element can be formed using thin film deposition.
- the memory element can be a thin film resistor, thin film capacitor, thin film transistor (TFT) or a thin film diode or a group of thin film devices connected to form an SRAM cell.
- An exemplary 6T SRAM cell shown in FIG. 13 , needs no high voltage capability, nor added process complexity.
- the cell of FIG. 13 has two back-to-back inverters 350 - 352 whose access is controlled by pass transistors 354 - 356 .
- R-load & Thin Film Transistor (TFT) load PMOS based SRAM cells can be used for PLDs and FPGAs.
- TFT Thin Film Transistor
- Pass gate transistor 360 logic controlled by SRAM is shown in FIG. 14 .
- the memory cell (such as the cell of FIG. 13 ) drives the pass transistor 360 to e affect an outcome.
- a 5 ⁇ 6-switch point matrix 370 controlled by 30-SRAM cells coupled to 30-NMOS pass gates is shown in FIG. 15 .
- FIG. 16 shows the NMOS pass gate 360 logic controlled by the SRAM in FIG. 14 converted to hard-wire logic.
- a contact 362 connected to Vcc (logic 1) or Vss (logic 0) depending on the SRAM logic content, replace the SRAM cell.
- the SRAM logic mapping to hard wire connections are automatic and done by a software program that is verifiable against the bit-map.
- FIG. 17 shows the 5 ⁇ 6-switch point matrix 370 hard-wired by replacing the SRAM bits that control NMOS gates with hard-wires to Vcc or Vss.
- the bubble may represent either SRAM or hard-wire Vcc or Vss control on NMOS pass gates.
- contact or no contact between the two metal lines in FIG. 15 directly replaces the programmable element and there is no NMOS pass-gate needed.
- the P-Term logic builds the core of PLD's and complex PLD's (CPLD's) that use AND-OR blocks 202 - 204 (or equivalent NAND-NOR type logic functions) as shown in the block diagram of FIG. 5 and one expansion is shown in FIG. 6 with and gates 210 and or gates 212 .
- Gate implementation of two inputs (I 1 , I 2 ) and two P-terms (P 1 , P 2 ) NAND function can be single poly EEPROM bits as shown in FIG. 10 .
- the dotted circle contains the charge trapping floating gate, the programming select transistor, tunneling diode, a control gate capacitor and programming access nodes.
- the SRAM cell replaces that entire circle in this invention as detailed next.
- the SRAM NAND-NOR array (also AND-OR array) replacement has not been realized in prior art as SRAM cells require Nwell & Pwell regions that consume large silicon area to prevent latch-up.
- the SRAM in TFT do not have well related constraints as NMOS and PMOS bodies are isolated from each other. Keeping the two pass gates in silicon layers and moving SRAM to TFT layers allow P-Term logic implementation with SRAM cells and subsequent replacement with hard-wires. In TFT SRAM conversion to final ASIC, the bubble on NMOS gate becomes a hard-wire connection to Vcc or Vss.
- the length of input and output wires, and the drive on NMOS pass gates and logic gate delays determine the overall PLD delay timing, independent of the SRAM cell parameters.
- the chip X, Y dimensions are reduced over 20% to 50% compared to traditional SRAM FPGA's, providing a faster logic evaluation time.
- removal of SRAM cell later does not alter lateral wire length, wire loading and NMOS pass gate characteristic.
- the vertical dimension change in eliminating the memory module is negligible compared to the lateral dimension of the ASIC, and has no impact on timing. This allows maintaining identical timing between the FPGA and ASIC implementations with and without the SRAM cells.
- the final ASIC with smaller die size and no SRAM elements have superior reliability, similar to an ASIC, leading to lower board level burn-in and field failures compared to PLD's and FPGA's in use today.
- the wiring and/or routing circuit 112 connects each logic block to each other logic block.
- the wiring/routing circuit allows a high degree of routing flexibility per silicon area consumed and uniformly fast propagation of signals, including high-fanout signals, throughout the device.
- the wiring module may contain one or many levels of metal interconnects.
- FIG. 15 One embodiment of a switch matrix is a 6 ⁇ 5 programmable switch-matrix with 30 SRAM bits (or 30 Anti-fuses, or 30 fuses), shown in FIG. 15 .
- the box in FIG. 14 contains the SRAM cell shown inside dotted box of FIG. 14 , where the pass gate makes the connection between the two wires, and the SRAM bit holds the configuration data.
- the wire connection in circuit 112 occurs via a pass transistor located in circuit 104 controlled by an SRAM cell in circuit 108 .
- a permanent non-volatile memory block located in the system loads the correct configuration data into SRAM cells.
- the box simply represents the programmable element in circuit 108 between the two wires in circuit 112 . During the ASIC conversion this link is replaced with an open or short between the wires.
- Another embodiment provides short interconnect segments that could be joined to each other and to input and output terminals of the logic blocks at programmable interconnection points.
- direct connections to adjacent logic blocks can be used to increase speed. For global signals that traverse long distances, longer lines are used. Segmented interconnect structures with routing lines of varied lengths can be used.
- a hierarchical interconnect structure provides lines of short lengths connectable at boundaries to lines of longer lengths extending between the boundaries, and larger boundaries with lines of even longer length extending between those boundaries.
- the routing circuit can connect adjacent logic blocks in two different hierarchical blocks differently than adjacent logic blocks in the same hierarchical block.
- a tile-based interconnect structure can be used where lines of varying lengths in which each tile in a rectangular array may be identical to each other tile.
- the interconnect lines can be separated from the logic block inputs by way of a routing matrix, which gives each interconnect line more flexible access to the logic block inputs.
- the interconnect routing is driven by programmable buffers. Long wire lengths can be sub-divided into smaller length segments with smaller buffers to achieve a net reduction in the overall wire delay, and to obtain predictable timing in the logic routing of the PLD.
- FIG. 18A shows a first embodiment of an FPGA constructed as a regular 2D FPGA or a modular 3D FPGA. It may have configuration circuits in the same module layers as the transistors as in conventional FPGAs. It may have configuration circuits in a second module layer positioned above a first module layer that comprises logic circuits as presented in FIG. 1 thru FIG. 4 .
- the FPGA has a core region 1801 .
- the core region comprises programmable logic blocks and programmable interconnects. It further comprises user memory such as single-port or dual-port memory.
- IP blocks such as microprocessor cores, DSP cores, analog cores and other circuits typically found in ICs. It further comprises registers, storage devices, clocks, PLLs, DLLs and control circuits.
- the core region 1801 interfaces with input/output pad regions 1811 .
- These pad structures may be arranged around the perimeter as shown in FIG. 18A .
- I/O structures 1811 A1 - 1811 G1 are left perimeter structures
- 1811 A2 - 1811 G2 are bottom perimeter structures
- 1811 A3 - 1811 G3 are right perimeter structures
- 1811 A4 - 1811 G4 are top perimeter structures.
- These pad structures may be arranged in any other method that is found in ICs, such as two sides of the core or distributed in an array through the core.
- Configuration circuits provide access for a user to program the functionality and routing of the FPGA to achieve a desirable functionality and performance. Configuration circuits further provide programmable interface of I/O pads to inputs of logic blocks and outputs of logic blocks in the FPGA core.
- the FPGA in FIG. 18A further comprises smaller regions within the core such as 1802 and 1803 .
- Region 1802 comprises the entire area inside the shaded region including region 1803 . Therefore the resource content of region 1803 is the least, 1802 is greater than in 1803 , and 1801 has the most.
- Each region comprises a subset of resources found in the core region 1801 . Thus a smaller design that requires fewer resources may be placed inside region 1802 , or even 1803 .
- a software tool is able to determine the resource content, and choose an appropriate region to place and route the design.
- the region 1802 which is smaller than region 1801 , interfaces with a subset of I/O structures 1811 ; the subset I/O structures also labeled 1811 in FIG. 18A .
- I/O structures 1811 B1 - 1811 F1 are left perimeter structures
- 1811 B2 - 1811 F2 are bottom perimeter structures
- 1811 B3 - 1811 F3 are right perimeter structures
- 1811 B4 - 1811 F4 are top perimeter structures.
- Power and ground pad structures are arranged in such a way, they are common to all regions.
- a pad structure is assumed to include buffer circuits, bond pad structures, ESD structures, registers, control circuits and other circuits found in ICs.
- the IO structures are distanced by circuits contained in region 1801 from the perimeter of 1802 .
- Registers 1821 are provided in the FPGA hardware such that a software tool is able to automatically recognize the region boundaries not adjacent to I/O structures; insert a register and couple either logic input or logic output to the register output or input respectively first; then couple the register input or output to corresponding I/O structure as shown.
- Register 1821 B2 couples to I/O structure 1811 B2 .
- the region 1803 which is smaller than region 1802 , interfaces with a subset of I/O structures 1811 ; the subset I/O structures also labeled 1811 in FIG. 18A .
- I/O structures 1811 C1 - 1811 E1 are left perimeter structures
- 1811 C2 - 1811 E2 are bottom perimeter structures
- 1811 C3 - 1811 E3 are right perimeter structures
- 1811 C4 - 1811 E4 are top perimeter structures.
- Power and ground pad structures are arranged in such a way, they are common to all regions.
- the 10 structures are distanced by circuits contained in region 1801 and in 1802 from the perimeter of 1803 .
- Registers 1831 are provided in the FPGA hardware such that a software tool is able to automatically recognize the region boundaries not adjacent to I/O structures; insert a register and couple either logic input or logic output to the register output or input respectively first; then couple the register input or output to corresponding I/O structure as shown.
- Register 1831 C2 couples to I/O structure 1811 C2 . It is understood that the FPGA in FIG. 18A comprises more than the few pads shown for illustrative purposes, and region 1803 may comprise hundreds of I/O structures.
- FIGS. 18B , 18 C and 18 D show three MPGA devices constructed with the identical resources found in regions 1801 , 1802 and 1803 respectively.
- a first module layer comprising transistors of region 1802 is substantially identically duplicated in the core region of FIG. 18C .
- a second module layer comprising a plurality of interconnects, positioned above the first module layer is also substantially identically duplicated in FIG. 18C .
- the subset of I/O regions common to region 1802 in FIG. 18A is also duplicated in FIG. 18C .
- registers 1821 are specially placed in FIG. 18A , and those are not duplicated in FIG. 18C ; instead logic input or output is directly coupled to the corresponding I/O structure.
- the software tool is able to identify the timing difference in the case of having a register in the FPGA to having no-register in the MPGA and use the appropriate delay numbers to calculate signal delays in the MPGA.
- the transistor layouts and metal interconnects layouts are substantially identical between regions 1802 in FIG. 18A , and region 1802 in FIG. 18C ; the logic placement is identical and logical net connects is identical and the timing delays are also identical within the region 1802 in both devices. Only input/output delays are different, but the difference is pre-characterized and known such that the software tool is able to provide an accurate design conversion from the FPGA to the cheaper and economical smaller MPGA.
- FIG. 18A can be identically placed and routed in MPGA shown in FIG. 18D ; and a design placed and routed in the region 1801 within FPGA in FIG. 18A , can be identically placed and routed in MPGA shown in FIG. 18B . It can also be seen the subset of I/O pad structures for the region 1803 in FIG. 18A is matched to I/O structures in MPGA of FIG. 18D without the need to duplicate registers 1831 of FIG. 18A in the MPGA of FIG. 18D .
- regions 1801 - 1803 is not limited to concentric regions, or to only two regions. It is conceivable that many regions may exist within the MPGA, each region uniquely mapping to an MPGA of equal resources and I/O density.
- FIG. 19A A second embodiment of an FPGA is shown in FIG. 19A , which further provides the ability to port identically mapped designs to MPGAs shown in FIGS. 19B , 19 C and 19 D. The methodology to map designs is identical to that described for FIG. 18 , and not repeated.
- the difference between FIG. 18A and FIG. 19A is in the manner in which regions 1901 , 1902 and 1903 are defined. All three regions now contain two edges of the die, thus sharing common pads 1911 A1 - 1911 C1 and 1911 A4 - 1911 C4 .
- regions 1902 and 1903 comprise at least two region boundaries that do not coincide with the I/O boundary.
- Such regional boundaries are provided with registers (registers 1921 for region 1902 , and registers 1931 for region 1903 ) similar to that in FIG. 18A for the software tool to pick when coupling to I/O structures 1911 A2 - 1911 C2 and 1911 A3 - 1911 C3 is required.
- An integrated circuit design platform comprising: a field programmable gate array (FPGA) prototype device in FIG. 18A comprised of: a circuit layout (in region 1801 ) comprising a plurality of field programmable logic blocks and a plurality of layers of field programmable interconnects; and a set of input/output pad structures 1811 ; and a first region 1802 within the circuit layout, said region having registers 1821 at one or more boundaries of the region, a said register capable of coupling to a said input/output pad structure 1811 ; and a first metal programmable gate array (first MPGA FIG. 18C ) production device comprised of: an substantially identical layout of programmable logic blocks in region 1902 as in the first region 1802 of the FPGA FIG.
- FPGA field programmable gate array
- FIG. 18A and a substantially identical layout of one or more layers of programmable interconnects as in the first region 1802 of the FPGA; wherein, a design mapped into the first region 1802 of the FPGA FIG. 18A is identically mapped to the first MPGA of FIG. 19C .
- the design platform wherein the FPGA in FIG. 18A comprises a configuration circuit to field program the programmable logic blocks and programmable interconnects; and the logic blocks are formed on a first module layer and the configuration circuit is formed on a second module layer positioned substantially above the first module layer.
- the configuration circuits are converted from user programmable circuits to mask-programmable circuits in the MPGA, the underlying logic placement and the interconnects are substantially kept identical between the two devices, enabling a very easy and simple design conversion from the expensive FPGA to cheaper and better MPGA.
- An integrated circuit design platform comprising: a prototype field programmable (FPGA) device in FIG. 19A comprising a layout of electronic circuits (in region 1901 ) and input/output pads 1911 ; and a production mask programmable (MPGA) device in FIG. 19C comprising: a layout of electronic circuits (in region 1902 ) substantially identical to a region 1802 within the prototype FPGA in FIG. 19A ; and a subset of input/output pads 1911 as within the prototype FPGA 1811 ; wherein, a design placed and routed within the region 1802 of the prototype FPGA using the subset of input/output pads 1811 as in the production MPGA 1911 is identically placed and routed in the production MPGA in FIG. 19C .
- FPGA field programmable
- MPGA production mask programmable
- a smaller mask programmable gate array (MPGA) device in FIG. 19D derived from a larger field programmable gate array (FPGA) device in FIG. 19A comprising: a layout of transistors and a plurality of interconnect layers (in region 1903 of FIG. 19D ) substantially identical to a region ( 1903 in FIG. 19A ) of the FPGA; and input/output pads ( 1911 in FIG. 19D ) matching a subset of the input/output pads of the FPGA ( 1911 in FIG. 19A ); wherein, a design that is mapped to said region of the FPGA ( 1901 in FIG. 19A ) device using said subset of input/output pads ( 1911 in FIG. 19A ) by a user programmable means can be identically mapped to the MPGA (in FIG. 19D ) by a hard-wire circuit.
- MPGA mask programmable gate array
- a method of mapping a design to a smaller region of an FPGA comprising: inserting a register 1821 at a boundary of a smaller region 1802 of the FPGA during logic placement; and coupling a logic block (within region 1802 ) to said register 1821 , and coupling said register 1821 to an input/output pad 1811 located at the edge of the FPGA die.
- the method further comprised of identically mapping the same design to an MPGA (in FIG. 18C ) comprising substantially identical transistor layout of said region 1802 of the FPGA, comprising: coupling said logic block to an input/output pad of the MPGA die ( 1811 in FIG. 18C ) without the intermediate register.
- said region 1802 of the FPGA and said MPGA further comprises an exact layout of one or more pass-gate devices to couple a said programmable logic block to a said interconnect wire, wherein: in the FPGA, the pass-gate device couples the logic block to the interconnect wire, said pass-gate device controlled by an output of a RAM bit, said RAM bit comprising: a logic one to couple the logic block to the interconnect wire; and a logic zero to decouple the logic block from the interconnect wire; and in the MPGA, the pass-gate device couples the logic block to the interconnect wire, said pass-gate device controlled by an output of a ROM bit, said ROM bit comprising: a metal connection to power bus to couple the logic block to the interconnect wire; and a metal connection to ground bus to decouple the logic block from the interconnect wire.
- the RAM bit in a 3D configuration within the FPGA is replaced by a hard-wired ROM bit in the
- said region 1802 of the FPGA and said MPGA further comprises an exact layout of one or more pass-gate devices to couple said one or more logic blocks to a said interconnect wire, wherein: in the FPGA, a pass-gate device couples a logic block to an interconnect wire, said pass-gate device controlled by an output of a RAM bit, said RAM bit comprising: a logic one to couple the logic block to the interconnect wire; and a logic zero to decouple the logic block from the interconnect wire; and in the MPGA, said pass-gate device is decoupled from said interconnect wire when the RAM bit comprises a logic zero; and in the MPGA, said pass-gate device is replaced by a metal jumper when the RAM bit comprises a logic one.
- an interconnect wire in the FPGA comprises a high capacitance due to the pass-gate device junctions coupled to the interconnect wire, and wherein said interconnect wire in the MPGA comprises less capacitance due to the pass-gate junctions decoupled from the interconnect wire; and an interconnect wire coupled to a logic block encounters a high resistance from the on pass-gate device in the FPGA, and wherein said interconnect wire coupled to the logic block in the MPGA encounters less resistance due to the metal-jumper. It is easily appreciated that in an FPGA any given wire segment is coupled to a plurality of logic blocks, both inputs and outputs of logic blocks, which makes FPGA slower and consume more power.
- the configuration circuit module layer is positioned above a circuit module layer.
- the circuit transistors in first module layer comprises an identical layout.
- the interconnect wires between the two devices also comprises a nearly identical layout: in a first embodiment when RAM bit is replaced by a ROM bit, the interconnect is identical; and in a second embodiment when nodes are disconnected from wire segments and pass-gates are replaced by metal jumpers, the interconnect is nearly identical. In both cases, the interconnect segments have not positionally changed.
- one or more digital circuits can be formed on a substrate.
- the process selectively fabricates either a memory circuit or a conductive pattern substantially above the digital circuits to control portion of digital circuits.
- the process fabricates an interconnect and routing layer substantially above the digital circuits and memory circuits to connect digital circuits and one of the memory circuit or the conductive pattern.
- the process can be modified to fabricate a generic field programmable gate array (FPGA) with the constructed memory circuit or an application specific integrated circuit (ASIC) with the constructed conductive pattern.
- FPGA field programmable gate array
- ASIC application specific integrated circuit
- Multiple ASICs can be fabricated with different variations of conductive patterns.
- the memory circuit and the conductive pattern have one or more substantially matching circuit characteristics. In this case, timing characteristics substantially unchanged by the circuit control option.
- the process thus fabricates a programmable logic device by constructing digital circuits on a substrate; and constructing a non-planar circuit on the substrate after constructing the digital circuits, the non-planar circuit being either a memory deposited to store data to configure the digital circuits to form a field programmable gate array (FPGA) or a conductive pattern deposited to hard-wire the digital circuits to form an application specific integrated circuit (ASIC), wherein the deposited memory and the conductive pattern have substantially matching timing characteristics.
- the hard-wire ASIC option may be incorporated into the digital circuit layer 100 .
- the hard-wire ASIC option is incorporated into the routing layer 110 .
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Abstract
Description
F=/A*/B*S0+/A*B*S1+A*/B*S2+A*B*S3(/A means not A).
The truth table logic states are represented by S0, S1, S2 and S3. The realization is done through six inverters collectively designated 250 and eight pass transistors collectively designated 260. Logic states are stored in 4 programmable registers.
Claims (31)
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9165931B1 (en) * | 2014-02-21 | 2015-10-20 | Altera Corporation | Apparatus for field-programmable gate array with configurable architecture and associated methods |
CN110070182A (en) * | 2019-04-01 | 2019-07-30 | 京微齐力(北京)科技有限公司 | The platform chip of suitable artificial intelligence and its manufacture and design method |
US10664643B2 (en) * | 2018-02-09 | 2020-05-26 | University Of Louisiana At Lafayette | Method for the non-copyable manufacture of integrated circuits |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8124429B2 (en) * | 2006-12-15 | 2012-02-28 | Richard Norman | Reprogrammable circuit board with alignment-insensitive support for multiple component contact types |
US8415783B1 (en) | 2007-10-04 | 2013-04-09 | Xilinx, Inc. | Apparatus and methodology for testing stacked die |
US7518398B1 (en) * | 2007-10-04 | 2009-04-14 | Xilinx, Inc. | Integrated circuit with through-die via interface for die stacking |
US7882453B2 (en) * | 2007-10-17 | 2011-02-01 | Rapid Bridge Llc | Semiconductor device metal programmable pooling and dies |
US8679861B2 (en) * | 2007-11-29 | 2014-03-25 | International Business Machines Corporation | Semiconductor chip repair by stacking of a base semiconductor chip and a repair semiconductor chip |
US7973555B1 (en) | 2008-05-28 | 2011-07-05 | Xilinx, Inc. | Configuration interface to stacked FPGA |
US8331128B1 (en) * | 2008-12-02 | 2012-12-11 | Adesto Technologies Corporation | Reconfigurable memory arrays having programmable impedance elements and corresponding methods |
US8063654B2 (en) * | 2009-07-17 | 2011-11-22 | Xilinx, Inc. | Apparatus and method for testing of stacked die structure |
US8273617B2 (en) | 2009-09-30 | 2012-09-25 | Suvolta, Inc. | Electronic devices and systems, and methods for making and using the same |
US20110079861A1 (en) * | 2009-09-30 | 2011-04-07 | Lucian Shifren | Advanced Transistors with Threshold Voltage Set Dopant Structures |
US8421162B2 (en) | 2009-09-30 | 2013-04-16 | Suvolta, Inc. | Advanced transistors with punch through suppression |
US8421500B2 (en) * | 2009-11-30 | 2013-04-16 | International Business Machines Corporation | Integrated circuit with stacked computational units and configurable through vias |
US8166437B2 (en) * | 2009-12-15 | 2012-04-24 | Apple Inc. | Automated pad ring generation for programmable logic device implementation of integrated circuit design |
US8530286B2 (en) | 2010-04-12 | 2013-09-10 | Suvolta, Inc. | Low power semiconductor transistor structure and method of fabrication thereof |
US8569128B2 (en) | 2010-06-21 | 2013-10-29 | Suvolta, Inc. | Semiconductor structure and method of fabrication thereof with mixed metal types |
US8759872B2 (en) | 2010-06-22 | 2014-06-24 | Suvolta, Inc. | Transistor with threshold voltage set notch and method of fabrication thereof |
US10687250B2 (en) | 2010-11-05 | 2020-06-16 | Mark Cummings | Mobile base station network |
CN103430488B (en) | 2010-11-05 | 2018-06-22 | 马克·卡明斯 | Orchestrating wireless network operations |
US10531516B2 (en) * | 2010-11-05 | 2020-01-07 | Mark Cummings | Self organizing system to implement emerging topologies |
US8159265B1 (en) * | 2010-11-16 | 2012-04-17 | Raminda Udaya Madurawe | Memory for metal configurable integrated circuits |
US8159266B1 (en) * | 2010-11-16 | 2012-04-17 | Raminda Udaya Madurawe | Metal configurable integrated circuits |
US8404551B2 (en) | 2010-12-03 | 2013-03-26 | Suvolta, Inc. | Source/drain extension control for advanced transistors |
US8286113B1 (en) * | 2011-01-11 | 2012-10-09 | Xilinx, Inc. | Verification of logic core implementation |
US8461875B1 (en) | 2011-02-18 | 2013-06-11 | Suvolta, Inc. | Digital circuits having improved transistors, and methods therefor |
US8525271B2 (en) | 2011-03-03 | 2013-09-03 | Suvolta, Inc. | Semiconductor structure with improved channel stack and method for fabrication thereof |
US8400219B2 (en) | 2011-03-24 | 2013-03-19 | Suvolta, Inc. | Analog circuits having improved transistors, and methods therefor |
US8748270B1 (en) | 2011-03-30 | 2014-06-10 | Suvolta, Inc. | Process for manufacturing an improved analog transistor |
US8493089B2 (en) | 2011-04-06 | 2013-07-23 | International Business Machines Corporation | Programmable logic circuit using three-dimensional stacking techniques |
US20120268162A1 (en) * | 2011-04-21 | 2012-10-25 | Microchip Technology Incorporated | Configurable logic cells |
US8999861B1 (en) | 2011-05-11 | 2015-04-07 | Suvolta, Inc. | Semiconductor structure with substitutional boron and method for fabrication thereof |
US8796048B1 (en) | 2011-05-11 | 2014-08-05 | Suvolta, Inc. | Monitoring and measurement of thin film layers |
US8811068B1 (en) | 2011-05-13 | 2014-08-19 | Suvolta, Inc. | Integrated circuit devices and methods |
US8569156B1 (en) | 2011-05-16 | 2013-10-29 | Suvolta, Inc. | Reducing or eliminating pre-amorphization in transistor manufacture |
US8735987B1 (en) | 2011-06-06 | 2014-05-27 | Suvolta, Inc. | CMOS gate stack structures and processes |
US8995204B2 (en) | 2011-06-23 | 2015-03-31 | Suvolta, Inc. | Circuit devices and methods having adjustable transistor body bias |
US8629016B1 (en) | 2011-07-26 | 2014-01-14 | Suvolta, Inc. | Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer |
US8748986B1 (en) | 2011-08-05 | 2014-06-10 | Suvolta, Inc. | Electronic device with controlled threshold voltage |
WO2013022753A2 (en) | 2011-08-05 | 2013-02-14 | Suvolta, Inc. | Semiconductor devices having fin structures and fabrication methods thereof |
US8614128B1 (en) | 2011-08-23 | 2013-12-24 | Suvolta, Inc. | CMOS structures and processes based on selective thinning |
US8645878B1 (en) | 2011-08-23 | 2014-02-04 | Suvolta, Inc. | Porting a circuit design from a first semiconductor process to a second semiconductor process |
US8713511B1 (en) | 2011-09-16 | 2014-04-29 | Suvolta, Inc. | Tools and methods for yield-aware semiconductor manufacturing process target generation |
US9236466B1 (en) | 2011-10-07 | 2016-01-12 | Mie Fujitsu Semiconductor Limited | Analog circuits having improved insulated gate transistors, and methods therefor |
US8895327B1 (en) | 2011-12-09 | 2014-11-25 | Suvolta, Inc. | Tipless transistors, short-tip transistors, and methods and circuits therefor |
US8819603B1 (en) | 2011-12-15 | 2014-08-26 | Suvolta, Inc. | Memory circuits and methods of making and designing the same |
US8883600B1 (en) | 2011-12-22 | 2014-11-11 | Suvolta, Inc. | Transistor having reduced junction leakage and methods of forming thereof |
US8599623B1 (en) | 2011-12-23 | 2013-12-03 | Suvolta, Inc. | Circuits and methods for measuring circuit elements in an integrated circuit device |
US8970289B1 (en) | 2012-01-23 | 2015-03-03 | Suvolta, Inc. | Circuits and devices for generating bi-directional body bias voltages, and methods therefor |
US8877619B1 (en) | 2012-01-23 | 2014-11-04 | Suvolta, Inc. | Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom |
US9093550B1 (en) | 2012-01-31 | 2015-07-28 | Mie Fujitsu Semiconductor Limited | Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same |
US9406567B1 (en) | 2012-02-28 | 2016-08-02 | Mie Fujitsu Semiconductor Limited | Method for fabricating multiple transistor devices on a substrate with varying threshold voltages |
US8863064B1 (en) | 2012-03-23 | 2014-10-14 | Suvolta, Inc. | SRAM cell layout structure and devices therefrom |
US9299698B2 (en) | 2012-06-27 | 2016-03-29 | Mie Fujitsu Semiconductor Limited | Semiconductor structure with multiple transistors having various threshold voltages |
US8637955B1 (en) | 2012-08-31 | 2014-01-28 | Suvolta, Inc. | Semiconductor structure with reduced junction leakage and method of fabrication thereof |
US9112057B1 (en) | 2012-09-18 | 2015-08-18 | Mie Fujitsu Semiconductor Limited | Semiconductor devices with dopant migration suppression and method of fabrication thereof |
US9041126B2 (en) | 2012-09-21 | 2015-05-26 | Mie Fujitsu Semiconductor Limited | Deeply depleted MOS transistors having a screening layer and methods thereof |
WO2014071049A2 (en) | 2012-10-31 | 2014-05-08 | Suvolta, Inc. | Dram-type device with low variation transistor peripheral circuits, and related methods |
US8816754B1 (en) | 2012-11-02 | 2014-08-26 | Suvolta, Inc. | Body bias circuits and methods |
US9093997B1 (en) | 2012-11-15 | 2015-07-28 | Mie Fujitsu Semiconductor Limited | Slew based process and bias monitors and related methods |
US9070477B1 (en) | 2012-12-12 | 2015-06-30 | Mie Fujitsu Semiconductor Limited | Bit interleaved low voltage static random access memory (SRAM) and related methods |
US9112484B1 (en) | 2012-12-20 | 2015-08-18 | Mie Fujitsu Semiconductor Limited | Integrated circuit process and bias monitors and related methods |
US9268885B1 (en) | 2013-02-28 | 2016-02-23 | Mie Fujitsu Semiconductor Limited | Integrated circuit device methods and models with predicted device metric variations |
US9299801B1 (en) | 2013-03-14 | 2016-03-29 | Mie Fujitsu Semiconductor Limited | Method for fabricating a transistor device with a tuned dopant profile |
US9478571B1 (en) | 2013-05-24 | 2016-10-25 | Mie Fujitsu Semiconductor Limited | Buried channel deeply depleted channel transistor |
US9204543B2 (en) * | 2013-12-03 | 2015-12-01 | Infineon Technologies Ag | Integrated IC package |
US8875080B1 (en) * | 2013-12-04 | 2014-10-28 | Baysand Inc. | Programmable macros for metal/via programmable gate array integrated circuits |
US9710006B2 (en) | 2014-07-25 | 2017-07-18 | Mie Fujitsu Semiconductor Limited | Power up body bias circuits and methods |
US9319013B2 (en) | 2014-08-19 | 2016-04-19 | Mie Fujitsu Semiconductor Limited | Operational amplifier input offset correction with transistor threshold voltage adjustment |
US9547744B2 (en) * | 2015-06-19 | 2017-01-17 | Celestica Technology Consultancy (Shanghai) Co. Ltd. | Method for reusing and verifying electronic circuits |
CN105160082B (en) * | 2015-08-17 | 2018-08-31 | 加弘科技咨询(上海)有限公司 | The recycling and verification method of electronic circuit |
US9900011B2 (en) * | 2016-03-07 | 2018-02-20 | Kabushiki Kaisha Toshiba | Semiconductor apparatus, routing module, and control method of semiconductor apparatus |
US11562101B2 (en) * | 2017-11-13 | 2023-01-24 | Intel Corporation | On-device bitstream validation |
CN107977519A (en) * | 2017-12-07 | 2018-05-01 | 郑州云海信息技术有限公司 | A kind of automation error-detection mechanism of high speed interconnecting interface |
CN107819883A (en) * | 2017-12-13 | 2018-03-20 | 天津光电通信技术有限公司 | A kind of multi signal processing equipment and its remote upgrade method to FPGA programs |
US11477667B2 (en) | 2018-06-14 | 2022-10-18 | Mark Cummings | Using orchestrators for false positive detection and root cause analysis |
CN109522155B (en) * | 2018-10-29 | 2020-11-03 | 中国科学院长春光学精密机械与物理研究所 | Embedded software self-healing system for space application based on dynamic switching |
US10747923B2 (en) | 2019-03-26 | 2020-08-18 | Intel Corporation | Methods and apparatus for emulating power loss event on an integrated circuit |
US10853541B1 (en) * | 2019-04-30 | 2020-12-01 | Xilinx, Inc. | Data processing engine (DPE) array global mapping |
CN117556759A (en) * | 2023-11-17 | 2024-02-13 | 北京国科天迅科技股份有限公司 | FPGA pin allocation method, device and storage medium |
Citations (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4609986A (en) | 1984-06-14 | 1986-09-02 | Altera Corporation | Programmable logic array device using EPROM technology |
US4706216A (en) | 1985-02-27 | 1987-11-10 | Xilinx, Inc. | Configurable logic element |
US4761768A (en) | 1985-03-04 | 1988-08-02 | Lattice Semiconductor Corporation | Programmable logic device |
US4864161A (en) | 1988-05-05 | 1989-09-05 | Altera Corporation | Multifunction flip-flop-type circuit |
US4870302A (en) | 1984-03-12 | 1989-09-26 | Xilinx, Inc. | Configurable electrical circuit having configurable logic elements and configurable interconnects |
US4873459A (en) | 1986-09-19 | 1989-10-10 | Actel Corporation | Programmable interconnect architecture |
US5164612A (en) | 1992-04-16 | 1992-11-17 | Kaplinsky Cecil H | Programmable CMOS flip-flop emptying multiplexers |
US5191241A (en) | 1990-08-01 | 1993-03-02 | Actel Corporation | Programmable interconnect architecture |
US5216636A (en) | 1991-09-16 | 1993-06-01 | Advanced Micro Devices, Inc. | Cmos memory cell |
US5343406A (en) | 1989-07-28 | 1994-08-30 | Xilinx, Inc. | Distributed memory architecture for a configurable logic array and method for using distributed memory |
US5347519A (en) | 1991-12-03 | 1994-09-13 | Crosspoint Solutions Inc. | Preprogramming testing in a field programmable gate array |
US5563526A (en) | 1994-01-03 | 1996-10-08 | Texas Instruments Incorporated | Programmable mixed-mode integrated circuit architecture |
US5581501A (en) | 1995-08-17 | 1996-12-03 | Altera Corporation | Nonvolatile SRAM cells and cell arrays |
US5612631A (en) | 1985-03-29 | 1997-03-18 | Advanced Micro Devices, Inc. | An I/O macrocell for a programmable logic device |
US5625221A (en) | 1994-03-03 | 1997-04-29 | Samsung Electronics Co., Ltd. | Semiconductor assembly for a three-dimensional integrated circuit package |
US5679967A (en) | 1985-01-20 | 1997-10-21 | Chip Express (Israel) Ltd. | Customizable three metal layer gate array devices |
US5684744A (en) | 1995-12-11 | 1997-11-04 | Hewlett-Packard Company | Configurable multifunction flip-flop |
US5701233A (en) | 1995-01-23 | 1997-12-23 | Irvine Sensors Corporation | Stackable modules and multimodular assemblies |
US5754826A (en) * | 1995-08-04 | 1998-05-19 | Synopsys, Inc. | CAD and simulation system for targeting IC designs to multiple fabrication processes |
US5781031A (en) | 1995-11-21 | 1998-07-14 | International Business Machines Corporation | Programmable logic array |
US5793115A (en) | 1993-09-30 | 1998-08-11 | Kopin Corporation | Three dimensional processor using transferred thin film circuits |
US5835405A (en) | 1993-12-13 | 1998-11-10 | Lattice Semiconductor Corporation | Application specific modules in a programmable logic device |
US5844422A (en) | 1996-11-13 | 1998-12-01 | Xilinx, Inc. | State saving and restoration in reprogrammable FPGAs |
US5880598A (en) | 1997-01-10 | 1999-03-09 | Xilinx, Inc. | Tile-based modular routing resources for high density programmable logic device |
US5943574A (en) | 1998-02-23 | 1999-08-24 | Motorola, Inc. | Method of fabricating 3D multilayer semiconductor circuits |
US5949710A (en) | 1996-04-10 | 1999-09-07 | Altera Corporation | Programmable interconnect junction |
US5949719A (en) | 1995-12-20 | 1999-09-07 | International Business Machines Corporation | Field programmable memory array |
US6005806A (en) | 1996-03-14 | 1999-12-21 | Altera Corporation | Nonvolatile configuration cells and cell arrays |
US6018476A (en) | 1996-09-16 | 2000-01-25 | Altera Corporation | Nonvolatile configuration cells and cell arrays |
US6097211A (en) | 1996-07-18 | 2000-08-01 | Altera Corporation | Configuration memory integrated circuit |
US6134171A (en) | 1994-06-02 | 2000-10-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device having hierarchical power source arrangement |
US6134173A (en) | 1991-09-03 | 2000-10-17 | Altera Corporation | Programmable logic array integrated circuits |
US6191614B1 (en) | 1999-04-05 | 2001-02-20 | Xilinx, Inc. | FPGA configuration circuit including bus-based CRC register |
US6242767B1 (en) | 1997-11-10 | 2001-06-05 | Lightspeed Semiconductor Corp. | Asic routing architecture |
US20010003428A1 (en) | 1999-05-13 | 2001-06-14 | Easic Corp. | Semiconductor device |
US6262596B1 (en) | 1999-04-05 | 2001-07-17 | Xilinx, Inc. | Configuration bus interface circuit for FPGAS |
US6275065B1 (en) | 1996-04-09 | 2001-08-14 | Altera Corporation | Programmable logic integrated circuit architecture incorporating a lonely register |
US6275064B1 (en) | 1997-12-22 | 2001-08-14 | Vantis Corporation | Symmetrical, extended and fast direct connections between variable grain blocks in FPGA integrated circuits |
US20010019155A1 (en) | 1994-03-17 | 2001-09-06 | Suguru Warashina | Semiconductor device and method of manufacturing semiconductor device |
US20010028059A1 (en) | 1997-12-08 | 2001-10-11 | Emma Philip George | Merged logic and memory combining thin film and bulk Si transistors |
US20010047509A1 (en) | 2000-05-25 | 2001-11-29 | Mason Jeffrey M. | Modular design method and system for programmable logic devices |
US6331784B1 (en) | 2000-07-28 | 2001-12-18 | Atmel Corporation | Secure programmable logic device |
US6337579B1 (en) | 1999-03-05 | 2002-01-08 | Rohm Co., Ltd. | Multichip semiconductor device |
US6340830B1 (en) | 1992-06-09 | 2002-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6353562B2 (en) | 2000-02-09 | 2002-03-05 | Infineon Technologies Ag | Integrated semiconductor memory with redundant units for memory cells |
US20020073380A1 (en) * | 1998-09-30 | 2002-06-13 | Cadence Design Systems, Inc. | Block based design methodology with programmable components |
US6420925B1 (en) | 2001-01-09 | 2002-07-16 | International Business Machines Corporation | Programmable latch device with integrated programmable element |
US6426649B1 (en) | 2000-12-29 | 2002-07-30 | Quicklogic Corporation | Architecture for field programmable gate array |
US6445065B1 (en) * | 2000-06-06 | 2002-09-03 | In-Chip Systems, Inc. | Routing driven, metal programmable integrated circuit architecture with multiple types of core cells |
US6448808B2 (en) | 1997-02-26 | 2002-09-10 | Xilinx, Inc. | Interconnect structure for a programmable logic device |
US6480027B1 (en) | 1999-03-04 | 2002-11-12 | Altera Corporation | Driver circuitry for programmable logic devices |
US6480954B2 (en) | 1995-08-18 | 2002-11-12 | Xilinx Inc. | Method of time multiplexing a programmable logic device |
US20020177260A1 (en) | 2001-01-29 | 2002-11-28 | Koichi Matsumoto | Semiconductor device and method of fabricating the same |
US20020186044A1 (en) | 1997-10-09 | 2002-12-12 | Vantis Corporation | Variable grain architecture for FPGA integrated circuits |
US6496887B1 (en) | 1998-03-16 | 2002-12-17 | Actel Corporation | SRAM bus architecture and interconnect to an FPGA |
US20030001615A1 (en) | 2001-06-29 | 2003-01-02 | Semiconductor Technology Academic Research Center | Programmable logic circuit device having look up table enabling to reduce implementation area |
US6504398B1 (en) | 1999-05-25 | 2003-01-07 | Actel Corporation | Integrated circuit that includes a field-programmable gate array and a hard gate array having the same underlying structure |
US6504742B1 (en) | 2001-10-31 | 2003-01-07 | Hewlett-Packard Company | 3-D memory device for large storage capacity |
US20030023762A1 (en) | 2001-07-25 | 2003-01-30 | Xilinx, Inc. | Configurable communication integrated circuit |
US6515511B2 (en) | 2000-02-17 | 2003-02-04 | Nec Corporation | Semiconductor integrated circuit and semiconductor integrated circuit device |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US20030085733A1 (en) | 2001-10-16 | 2003-05-08 | Pugh Daniel J. | Field programmable gate array core cell with efficient logic packing |
US6582980B2 (en) | 2001-01-30 | 2003-06-24 | Eastman Kodak Company | System for integrating digital control with common substrate display devices |
US6613611B1 (en) | 2000-12-22 | 2003-09-02 | Lightspeed Semiconductor Corporation | ASIC routing architecture with variable number of custom masks |
US6617621B1 (en) * | 2000-06-06 | 2003-09-09 | Virage Logic Corporation | Gate array architecture using elevated metal levels for customization |
US6627985B2 (en) | 2001-12-05 | 2003-09-30 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
US6633181B1 (en) | 1999-12-30 | 2003-10-14 | Stretch, Inc. | Multi-scale programmable array |
US20030227056A1 (en) | 2002-06-05 | 2003-12-11 | Hongmei Wang | Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication |
US6738962B1 (en) | 2000-06-12 | 2004-05-18 | Altera Corporation | Configuration and/or reconfiguration of integrated circuit devices that include programmable logic and microprocessor circuitry |
US6737675B2 (en) | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
US20040178819A1 (en) | 2003-03-12 | 2004-09-16 | Xilinx, Inc. | Multi-chip programmable logic device having configurable logic circuitry and configuration data storage on different dice |
US6798240B1 (en) | 2003-01-24 | 2004-09-28 | Altera Corporation | Logic circuitry with shared lookup table |
US6812731B1 (en) | 2002-05-16 | 2004-11-02 | Xilinx, Inc. | Quintuple modular redundancy for high reliability circuits implemented in programmable logic devices |
US20040268286A1 (en) * | 2003-06-30 | 2004-12-30 | Xilinx, Inc. | Integrated circuit with interface tile for coupling to a stacked-die second integrated circuit |
US20050023656A1 (en) | 2002-08-08 | 2005-02-03 | Leedy Glenn J. | Vertical system integration |
US6911730B1 (en) | 2003-03-03 | 2005-06-28 | Xilinx, Inc. | Multi-chip module including embedded transistors within the substrate |
US6946330B2 (en) | 2001-10-11 | 2005-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Designing method and manufacturing method for semiconductor display device |
US6954084B2 (en) | 2002-02-11 | 2005-10-11 | Seiko Epson Corporation | Logic circuits using polycrystalline semiconductor thin film transistors |
US6992503B2 (en) | 2002-07-08 | 2006-01-31 | Viciciv Technology | Programmable devices with convertibility to customizable devices |
US6998722B2 (en) | 2002-07-08 | 2006-02-14 | Viciciv Technology | Semiconductor latches and SRAM devices |
US7019557B2 (en) | 2003-12-24 | 2006-03-28 | Viciciv Technology | Look-up table based logic macro-cells |
US7030651B2 (en) | 2003-12-04 | 2006-04-18 | Viciciv Technology | Programmable structured arrays |
US7064018B2 (en) | 2002-07-08 | 2006-06-20 | Viciciv Technology | Methods for fabricating three dimensional integrated circuits |
US7064579B2 (en) | 2002-07-08 | 2006-06-20 | Viciciv Technology | Alterable application specific integrated circuit (ASIC) |
US7084666B2 (en) | 2002-10-21 | 2006-08-01 | Viciciv Technology | Programmable interconnect structures |
US20060195729A1 (en) | 2001-12-05 | 2006-08-31 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
US7112994B2 (en) | 2002-07-08 | 2006-09-26 | Viciciv Technology | Three dimensional integrated circuits |
US7176713B2 (en) | 2004-01-05 | 2007-02-13 | Viciciv Technology | Integrated circuits with RAM and ROM fabrication options |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5629637A (en) * | 1995-08-18 | 1997-05-13 | Xilinx, Inc. | Method of time multiplexing a programmable logic device |
US6781409B2 (en) * | 2001-10-10 | 2004-08-24 | Altera Corporation | Apparatus and methods for silicon-on-insulator transistors in programmable logic devices |
-
2007
- 2007-03-01 US US11/712,380 patent/US7673273B2/en not_active Ceased
-
2012
- 2012-03-02 US US13/411,486 patent/USRE45110E1/en not_active Expired - Fee Related
Patent Citations (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4870302A (en) | 1984-03-12 | 1989-09-26 | Xilinx, Inc. | Configurable electrical circuit having configurable logic elements and configurable interconnects |
US4609986A (en) | 1984-06-14 | 1986-09-02 | Altera Corporation | Programmable logic array device using EPROM technology |
US5679967A (en) | 1985-01-20 | 1997-10-21 | Chip Express (Israel) Ltd. | Customizable three metal layer gate array devices |
US4706216A (en) | 1985-02-27 | 1987-11-10 | Xilinx, Inc. | Configurable logic element |
US4761768A (en) | 1985-03-04 | 1988-08-02 | Lattice Semiconductor Corporation | Programmable logic device |
US5612631A (en) | 1985-03-29 | 1997-03-18 | Advanced Micro Devices, Inc. | An I/O macrocell for a programmable logic device |
US4873459A (en) | 1986-09-19 | 1989-10-10 | Actel Corporation | Programmable interconnect architecture |
US4873459B1 (en) | 1986-09-19 | 1995-01-10 | Actel Corp | Programmable interconnect architecture |
US4864161A (en) | 1988-05-05 | 1989-09-05 | Altera Corporation | Multifunction flip-flop-type circuit |
US5488316A (en) | 1989-07-28 | 1996-01-30 | Xilinx, Inc. | Circuit for selecting a bit in a look-up table |
US5343406A (en) | 1989-07-28 | 1994-08-30 | Xilinx, Inc. | Distributed memory architecture for a configurable logic array and method for using distributed memory |
US5191241A (en) | 1990-08-01 | 1993-03-02 | Actel Corporation | Programmable interconnect architecture |
US6134173A (en) | 1991-09-03 | 2000-10-17 | Altera Corporation | Programmable logic array integrated circuits |
US5216636A (en) | 1991-09-16 | 1993-06-01 | Advanced Micro Devices, Inc. | Cmos memory cell |
US5347519A (en) | 1991-12-03 | 1994-09-13 | Crosspoint Solutions Inc. | Preprogramming testing in a field programmable gate array |
US5164612A (en) | 1992-04-16 | 1992-11-17 | Kaplinsky Cecil H | Programmable CMOS flip-flop emptying multiplexers |
US6340830B1 (en) | 1992-06-09 | 2002-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US5793115A (en) | 1993-09-30 | 1998-08-11 | Kopin Corporation | Three dimensional processor using transferred thin film circuits |
US5835405A (en) | 1993-12-13 | 1998-11-10 | Lattice Semiconductor Corporation | Application specific modules in a programmable logic device |
US5563526A (en) | 1994-01-03 | 1996-10-08 | Texas Instruments Incorporated | Programmable mixed-mode integrated circuit architecture |
US5625221A (en) | 1994-03-03 | 1997-04-29 | Samsung Electronics Co., Ltd. | Semiconductor assembly for a three-dimensional integrated circuit package |
US20010019155A1 (en) | 1994-03-17 | 2001-09-06 | Suguru Warashina | Semiconductor device and method of manufacturing semiconductor device |
US6134171A (en) | 1994-06-02 | 2000-10-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device having hierarchical power source arrangement |
US5701233A (en) | 1995-01-23 | 1997-12-23 | Irvine Sensors Corporation | Stackable modules and multimodular assemblies |
US5754826A (en) * | 1995-08-04 | 1998-05-19 | Synopsys, Inc. | CAD and simulation system for targeting IC designs to multiple fabrication processes |
US5581501A (en) | 1995-08-17 | 1996-12-03 | Altera Corporation | Nonvolatile SRAM cells and cell arrays |
US6480954B2 (en) | 1995-08-18 | 2002-11-12 | Xilinx Inc. | Method of time multiplexing a programmable logic device |
US5781031A (en) | 1995-11-21 | 1998-07-14 | International Business Machines Corporation | Programmable logic array |
US5684744A (en) | 1995-12-11 | 1997-11-04 | Hewlett-Packard Company | Configurable multifunction flip-flop |
US5949719A (en) | 1995-12-20 | 1999-09-07 | International Business Machines Corporation | Field programmable memory array |
US6005806A (en) | 1996-03-14 | 1999-12-21 | Altera Corporation | Nonvolatile configuration cells and cell arrays |
US6275065B1 (en) | 1996-04-09 | 2001-08-14 | Altera Corporation | Programmable logic integrated circuit architecture incorporating a lonely register |
US5949710A (en) | 1996-04-10 | 1999-09-07 | Altera Corporation | Programmable interconnect junction |
US6097211A (en) | 1996-07-18 | 2000-08-01 | Altera Corporation | Configuration memory integrated circuit |
US6614259B2 (en) | 1996-07-18 | 2003-09-02 | Altera Corporation | Configuration memory integrated circuit |
US6259271B1 (en) | 1996-07-18 | 2001-07-10 | Altera Corporation | Configuration memory integrated circuit |
US6018476A (en) | 1996-09-16 | 2000-01-25 | Altera Corporation | Nonvolatile configuration cells and cell arrays |
US5844422A (en) | 1996-11-13 | 1998-12-01 | Xilinx, Inc. | State saving and restoration in reprogrammable FPGAs |
US5880598A (en) | 1997-01-10 | 1999-03-09 | Xilinx, Inc. | Tile-based modular routing resources for high density programmable logic device |
US6448808B2 (en) | 1997-02-26 | 2002-09-10 | Xilinx, Inc. | Interconnect structure for a programmable logic device |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US20020186044A1 (en) | 1997-10-09 | 2002-12-12 | Vantis Corporation | Variable grain architecture for FPGA integrated circuits |
US6242767B1 (en) | 1997-11-10 | 2001-06-05 | Lightspeed Semiconductor Corp. | Asic routing architecture |
US20010028059A1 (en) | 1997-12-08 | 2001-10-11 | Emma Philip George | Merged logic and memory combining thin film and bulk Si transistors |
US6275064B1 (en) | 1997-12-22 | 2001-08-14 | Vantis Corporation | Symmetrical, extended and fast direct connections between variable grain blocks in FPGA integrated circuits |
US5943574A (en) | 1998-02-23 | 1999-08-24 | Motorola, Inc. | Method of fabricating 3D multilayer semiconductor circuits |
US6496887B1 (en) | 1998-03-16 | 2002-12-17 | Actel Corporation | SRAM bus architecture and interconnect to an FPGA |
US20020073380A1 (en) * | 1998-09-30 | 2002-06-13 | Cadence Design Systems, Inc. | Block based design methodology with programmable components |
US6480027B1 (en) | 1999-03-04 | 2002-11-12 | Altera Corporation | Driver circuitry for programmable logic devices |
US6337579B1 (en) | 1999-03-05 | 2002-01-08 | Rohm Co., Ltd. | Multichip semiconductor device |
US6262596B1 (en) | 1999-04-05 | 2001-07-17 | Xilinx, Inc. | Configuration bus interface circuit for FPGAS |
US6191614B1 (en) | 1999-04-05 | 2001-02-20 | Xilinx, Inc. | FPGA configuration circuit including bus-based CRC register |
US20010003428A1 (en) | 1999-05-13 | 2001-06-14 | Easic Corp. | Semiconductor device |
US6331789B2 (en) | 1999-05-13 | 2001-12-18 | Easic Corporation | Semiconductor device |
US6504398B1 (en) | 1999-05-25 | 2003-01-07 | Actel Corporation | Integrated circuit that includes a field-programmable gate array and a hard gate array having the same underlying structure |
US6633181B1 (en) | 1999-12-30 | 2003-10-14 | Stretch, Inc. | Multi-scale programmable array |
US6353562B2 (en) | 2000-02-09 | 2002-03-05 | Infineon Technologies Ag | Integrated semiconductor memory with redundant units for memory cells |
US6515511B2 (en) | 2000-02-17 | 2003-02-04 | Nec Corporation | Semiconductor integrated circuit and semiconductor integrated circuit device |
US20010047509A1 (en) | 2000-05-25 | 2001-11-29 | Mason Jeffrey M. | Modular design method and system for programmable logic devices |
US6617621B1 (en) * | 2000-06-06 | 2003-09-09 | Virage Logic Corporation | Gate array architecture using elevated metal levels for customization |
US6445065B1 (en) * | 2000-06-06 | 2002-09-03 | In-Chip Systems, Inc. | Routing driven, metal programmable integrated circuit architecture with multiple types of core cells |
US6738962B1 (en) | 2000-06-12 | 2004-05-18 | Altera Corporation | Configuration and/or reconfiguration of integrated circuit devices that include programmable logic and microprocessor circuitry |
US6331784B1 (en) | 2000-07-28 | 2001-12-18 | Atmel Corporation | Secure programmable logic device |
US6613611B1 (en) | 2000-12-22 | 2003-09-02 | Lightspeed Semiconductor Corporation | ASIC routing architecture with variable number of custom masks |
US6426649B1 (en) | 2000-12-29 | 2002-07-30 | Quicklogic Corporation | Architecture for field programmable gate array |
US6420925B1 (en) | 2001-01-09 | 2002-07-16 | International Business Machines Corporation | Programmable latch device with integrated programmable element |
US20020177260A1 (en) | 2001-01-29 | 2002-11-28 | Koichi Matsumoto | Semiconductor device and method of fabricating the same |
US6582980B2 (en) | 2001-01-30 | 2003-06-24 | Eastman Kodak Company | System for integrating digital control with common substrate display devices |
US20030001615A1 (en) | 2001-06-29 | 2003-01-02 | Semiconductor Technology Academic Research Center | Programmable logic circuit device having look up table enabling to reduce implementation area |
US20030023762A1 (en) | 2001-07-25 | 2003-01-30 | Xilinx, Inc. | Configurable communication integrated circuit |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6946330B2 (en) | 2001-10-11 | 2005-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Designing method and manufacturing method for semiconductor display device |
US20030085733A1 (en) | 2001-10-16 | 2003-05-08 | Pugh Daniel J. | Field programmable gate array core cell with efficient logic packing |
US6504742B1 (en) | 2001-10-31 | 2003-01-07 | Hewlett-Packard Company | 3-D memory device for large storage capacity |
US20060195729A1 (en) | 2001-12-05 | 2006-08-31 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
US6627985B2 (en) | 2001-12-05 | 2003-09-30 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
US6954084B2 (en) | 2002-02-11 | 2005-10-11 | Seiko Epson Corporation | Logic circuits using polycrystalline semiconductor thin film transistors |
US6812731B1 (en) | 2002-05-16 | 2004-11-02 | Xilinx, Inc. | Quintuple modular redundancy for high reliability circuits implemented in programmable logic devices |
US20030227056A1 (en) | 2002-06-05 | 2003-12-11 | Hongmei Wang | Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication |
US6737675B2 (en) | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
US7268580B2 (en) | 2002-07-08 | 2007-09-11 | Viciciv Technology | Configuration circuits for three dimensional programmable logic devices |
US6992503B2 (en) | 2002-07-08 | 2006-01-31 | Viciciv Technology | Programmable devices with convertibility to customizable devices |
US6998722B2 (en) | 2002-07-08 | 2006-02-14 | Viciciv Technology | Semiconductor latches and SRAM devices |
US7112994B2 (en) | 2002-07-08 | 2006-09-26 | Viciciv Technology | Three dimensional integrated circuits |
US7064018B2 (en) | 2002-07-08 | 2006-06-20 | Viciciv Technology | Methods for fabricating three dimensional integrated circuits |
US7064579B2 (en) | 2002-07-08 | 2006-06-20 | Viciciv Technology | Alterable application specific integrated circuit (ASIC) |
US20050023656A1 (en) | 2002-08-08 | 2005-02-03 | Leedy Glenn J. | Vertical system integration |
US7084666B2 (en) | 2002-10-21 | 2006-08-01 | Viciciv Technology | Programmable interconnect structures |
US6798240B1 (en) | 2003-01-24 | 2004-09-28 | Altera Corporation | Logic circuitry with shared lookup table |
US6911730B1 (en) | 2003-03-03 | 2005-06-28 | Xilinx, Inc. | Multi-chip module including embedded transistors within the substrate |
US20040178819A1 (en) | 2003-03-12 | 2004-09-16 | Xilinx, Inc. | Multi-chip programmable logic device having configurable logic circuitry and configuration data storage on different dice |
US20040268286A1 (en) * | 2003-06-30 | 2004-12-30 | Xilinx, Inc. | Integrated circuit with interface tile for coupling to a stacked-die second integrated circuit |
US7030651B2 (en) | 2003-12-04 | 2006-04-18 | Viciciv Technology | Programmable structured arrays |
US7253659B2 (en) | 2003-12-04 | 2007-08-07 | Viciciv Technology | Field programmable structured arrays |
US7019557B2 (en) | 2003-12-24 | 2006-03-28 | Viciciv Technology | Look-up table based logic macro-cells |
US7176713B2 (en) | 2004-01-05 | 2007-02-13 | Viciciv Technology | Integrated circuits with RAM and ROM fabrication options |
Non-Patent Citations (3)
Title |
---|
Alexander, et al., "Three-Dimensional Field-Programmable Gate Arrays", Proceedings of the 8.sup.th Annual IEEE International ASIC Conference and Exhibit, 1995, pp. 253-256. |
Ashok K. Sharma, "Programmable Logic Handbook-PLDs, CPLDs, & FPGAs", 1998, pp. 99-171, McGraw-Hill, USA. |
Chen Dong et al., "3-D nFPGA: A reconfigurable architecture for 3-D CMOS/Nanomaterial Hybrid Digital Circuits", IEEE Trans. Circuits and Systems, vol. 54, No. 11, Nov. 1, 2007 (pp. 2489-2501). |
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