GB1137388A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1137388A
GB1137388A GB10221/66A GB1022166A GB1137388A GB 1137388 A GB1137388 A GB 1137388A GB 10221/66 A GB10221/66 A GB 10221/66A GB 1022166 A GB1022166 A GB 1022166A GB 1137388 A GB1137388 A GB 1137388A
Authority
GB
United Kingdom
Prior art keywords
emitter
base
portions
emitting
low resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10221/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1137388A publication Critical patent/GB1137388A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors

Landscapes

  • Bipolar Transistors (AREA)

Abstract

1,137,388. Transistors. RADIO CORPORATION OF AMERICA. 8 March, 1966 [17 March, 1965], No. 10221/66. Heading H1K. A transistor has an emitter lead making contact to a portion of the emitter region of relatively high resistivity; this portion acts as a ballast resistor for the less resistive active emitting portion of the region. In an embodiment (not shown) a low resistivity monoorystalline silicon substrate (4) and a more resistive epitaxial layer (6) contiguous thereto act as the collector region. The base layer is formed in the epitaxial layer by two B 2 O 3 or BBr 3 diffusion steps, the first producing circular high resistivity base portions (10) and the second producing the low resistivity remainder (12) of the base layer. The emitter regions are formed by two POCl 3 diffusion steps to form many high resistivity circular non-emitting portions (14) and their surrounding annular low resistivity active portions (16). The combshaped emitter electrode (20, 24), formed by the vapour deposition of aluminium, makes contact with the non-emitting emitter areas through circular holes in a silicon dioxide layer (18). The interdigitated aluminium base contact (26, 30) makes contact with the low resistivity portions (12) of the base layer through holes (28) in the oxide. These holes are spaced evenly around each emitter site to obtain a substantially uniform distribution of potential between the base connection and all emitting parts, and are defined by arcuate edges the centre of curvature of each of which is the centre of the nearest emitter.
GB10221/66A 1965-03-17 1966-03-08 Semiconductor device Expired GB1137388A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44039765A 1965-03-17 1965-03-17

Publications (1)

Publication Number Publication Date
GB1137388A true GB1137388A (en) 1968-12-18

Family

ID=23748599

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10221/66A Expired GB1137388A (en) 1965-03-17 1966-03-08 Semiconductor device

Country Status (8)

Country Link
US (1) US3427511A (en)
JP (1) JPS499269B1 (en)
BR (1) BR6677894D0 (en)
DE (1) DE1564522A1 (en)
ES (1) ES324211A1 (en)
GB (1) GB1137388A (en)
NL (1) NL150949B (en)
SE (1) SE326502B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6706641A (en) * 1966-11-07 1968-11-13
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3582726A (en) * 1969-09-03 1971-06-01 Microwave Semiconductor Corp High frequency power transistor having a plurality of discrete base areas
DE1955954A1 (en) * 1969-11-06 1971-05-13 Siemens Ag Contact arrangement
US3684933A (en) * 1971-06-21 1972-08-15 Itt Semiconductor device showing at least three successive zones of alternate opposite conductivity type
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
FR2417854A1 (en) * 1978-02-21 1979-09-14 Radiotechnique Compelec TRANSISTOR WITH AN INTEGRATED RESISTIVE ZONE IN ITS ISSUING REGION
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
US4506280A (en) * 1982-05-12 1985-03-19 Motorola, Inc. Transistor with improved power dissipation capability
JPH03253078A (en) * 1989-12-21 1991-11-12 Asea Brown Boveri Ag Breakable power semiconductor element
DE4102099A1 (en) * 1990-02-13 1991-08-14 Asea Brown Boveri DISABLED PERFORMANCE SEMICONDUCTOR COMPONENT
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US3180766A (en) * 1958-12-30 1965-04-27 Raytheon Co Heavily doped base rings
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor

Also Published As

Publication number Publication date
NL150949B (en) 1976-09-15
NL6603436A (en) 1966-09-19
SE326502B (en) 1970-07-27
US3427511A (en) 1969-02-11
ES324211A1 (en) 1967-02-01
DE1564522A1 (en) 1972-01-20
JPS499269B1 (en) 1974-03-02
BR6677894D0 (en) 1973-05-15

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