SE326502B - - Google Patents

Info

Publication number: SE326502B
Authority: SE; Sweden

Application number

SE03476/66A

Inventor

R Rosenzweig

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1965-03-17

Filing date

1966-03-16

Publication date

1970-07-27

1966-03-16 Application filed by Rca Corp filed Critical Rca Corp

1970-07-27 Publication of SE326502B publication Critical patent/SE326502B/xx

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/136—Resistors

SE03476/66A 1965-03-17 1966-03-16 SE326502B (xx)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US44039765A	1965-03-17	1965-03-17

Publications (1)

Publication Number	Publication Date
SE326502B true SE326502B (xx)	1970-07-27

Family

ID=23748599

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE03476/66A SE326502B (xx)	1965-03-17	1966-03-16

Country Status (8)

Country	Link
US (1)	US3427511A (xx)
JP (1)	JPS499269B1 (xx)
BR (1)	BR6677894D0 (xx)
DE (1)	DE1564522A1 (xx)
ES (1)	ES324211A1 (xx)
GB (1)	GB1137388A (xx)
NL (1)	NL150949B (xx)
SE (1)	SE326502B (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL6706641A (xx) *	1966-11-07	1968-11-13
US3519898A (en) *	1967-01-31	1970-07-07	Nippon Electric Co	High power semiconductor device having a plurality of emitter regions
US3582726A (en) *	1969-09-03	1971-06-01	Microwave Semiconductor Corp	High frequency power transistor having a plurality of discrete base areas
DE1955954A1 (de) *	1969-11-06	1971-05-13	Siemens Ag	Kontaktanordnung
US3684933A (en) *	1971-06-21	1972-08-15	Itt	Semiconductor device showing at least three successive zones of alternate opposite conductivity type
US3740621A (en) *	1971-08-30	1973-06-19	Rca Corp	Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
US3878550A (en) *	1972-10-27	1975-04-15	Raytheon Co	Microwave power transistor
GB1558281A (en) *	1975-07-31	1979-12-19	Tokyo Shibaura Electric Co	Semiconductor device and logic circuit constituted by the semiconductor device
FR2417854A1 (fr) *	1978-02-21	1979-09-14	Radiotechnique Compelec	Transistor comportant une zone resistive integree dans sa region d'emetteur
JPS54120587A (en) *	1978-03-10	1979-09-19	Fujitsu Ltd	Transistor
US4506280A (en) *	1982-05-12	1985-03-19	Motorola, Inc.	Transistor with improved power dissipation capability
GB2175441B (en) *	1985-05-03	1989-05-10	Texas Instruments Ltd	Power bipolar transistor
JPH03253078A (ja) *	1989-12-21	1991-11-12	Asea Brown Boveri Ag	遮断可能なパワー半導体素子
DE4102099A1 (de) *	1990-02-13	1991-08-14	Asea Brown Boveri	Abschaltbares leistungshalbleiter-bauelement
US7196889B2 (en) *	2002-11-15	2007-03-27	Medtronic, Inc.	Zener triggered overvoltage protection device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2980830A (en) *	1956-08-22	1961-04-18	Shockley William	Junction transistor
US3180766A (en) *	1958-12-30	1965-04-27	Raytheon Co	Heavily doped base rings
US3225261A (en) *	1963-11-19	1965-12-21	Fairchild Camera Instr Co	High frequency power transistor

1965
- 1965-03-17 US US440397A patent/US3427511A/en not_active Expired - Lifetime
1966
- 1966-03-08 GB GB10221/66A patent/GB1137388A/en not_active Expired
- 1966-03-10 DE DE19661564522 patent/DE1564522A1/de active Pending
- 1966-03-15 ES ES0324211A patent/ES324211A1/es not_active Expired
- 1966-03-16 SE SE03476/66A patent/SE326502B/xx unknown
- 1966-03-16 BR BR177894/66A patent/BR6677894D0/pt unknown
- 1966-03-16 NL NL666603436A patent/NL150949B/xx unknown
1971
- 1971-08-27 JP JP46065798A patent/JPS499269B1/ja active Pending

Also Published As

Publication number	Publication date
NL150949B (nl)	1976-09-15
NL6603436A (xx)	1966-09-19
US3427511A (en)	1969-02-11
ES324211A1 (es)	1967-02-01
GB1137388A (en)	1968-12-18
DE1564522A1 (de)	1972-01-20
JPS499269B1 (xx)	1974-03-02
BR6677894D0 (pt)	1973-05-15

Publication	Publication Date	Title
BE674562A (xx)	1966-04-15
BE675019A (xx)	1966-07-12
BE658161A (xx)	1965-04-30
BE659951A (xx)	1965-06-16
BE661729A (xx)	1965-07-16
BE662195A (xx)	1965-10-07
BE674730A (xx)	1966-07-04
BE662963A (xx)	1965-10-25
BE664767A (xx)	1965-12-01
BE665788A (xx)	1965-10-18
BE666590A (xx)	1965-11-03
BE666951A (xx)	1965-11-03
BE667030A (xx)	1965-11-16
BE668354A (xx)	1965-12-16
SE326502B (xx)	1970-07-27
BE668993A (xx)	1965-12-16
BE669123A (xx)	1965-12-31
BE669450A (xx)	1965-12-31
BE669463A (xx)
BE669636A (xx)	1965-12-31
BE670335A (xx)	1966-01-17
BE670576A (xx)	1966-01-31
BE671031A (xx)
BE671152A (xx)	1966-04-20
BE672033A (xx)	1966-05-09