GB853397A - Improvements in or relating to methods of preparing semiconductor material - Google Patents

Improvements in or relating to methods of preparing semiconductor material

Info

Publication number
GB853397A
GB853397A GB41704/58A GB4170458A GB853397A GB 853397 A GB853397 A GB 853397A GB 41704/58 A GB41704/58 A GB 41704/58A GB 4170458 A GB4170458 A GB 4170458A GB 853397 A GB853397 A GB 853397A
Authority
GB
United Kingdom
Prior art keywords
wire
conductor
semi
dec
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41704/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB853397A publication Critical patent/GB853397A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/106—Continuous processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)

Abstract

853,397. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 24, 1958 [Dec. 27, 1957], No. 41704/58. Class 37 A monocrystalline semi-conductor of one conductivity type, in the form of a wire is passed through an oven containing a gaseous impurity which forms a layer of opposite conductivity type on the wire. The oven may contain an acceptor and a donor impurity having different diffusion coefficients so that an NPN (or PNP) structure is formed as shown in Fig. 1. A section of the wire may then be cut off so that electrodes may be provided to form an NPN transistor as shown in Fig. 2. The edges of such a disc may be cut away to provide an NPNPN structure. The wire may also be passed through a pair of diamond grinding wheels to form a "tape" of monocrystalline semi-conductor. The semi-conductor may consist of germanium with arsenic and gallium as impurities, or silicon with aluminium and antimony as impurities.
GB41704/58A 1957-12-27 1958-12-24 Improvements in or relating to methods of preparing semiconductor material Expired GB853397A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR754763 1957-12-27

Publications (1)

Publication Number Publication Date
GB853397A true GB853397A (en) 1960-11-09

Family

ID=8705365

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41704/58A Expired GB853397A (en) 1957-12-27 1958-12-24 Improvements in or relating to methods of preparing semiconductor material

Country Status (3)

Country Link
DE (1) DE1133470B (en)
FR (1) FR1196063A (en)
GB (1) GB853397A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1278013B (en) * 1961-08-17 1968-09-19 Itt Ind Ges Mit Beschraenkter Method for manufacturing electrical semiconductor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co Process for producing a crystal from semiconductor material
GB753160A (en) * 1953-04-02 1956-07-18 Standard Telephcnes And Gables Method of making p-n crystals of germanium or silicon semiconductors
DE1018558B (en) * 1954-07-15 1957-10-31 Siemens Ag Process for the production of directional conductors, transistors and. Like. From a semiconductor

Also Published As

Publication number Publication date
FR1196063A (en) 1959-11-20
DE1133470B (en) 1962-07-19

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