HK61988A - Shunting of zero-voltage-crossing gate feed of semiconductor power thyristors - Google Patents

Shunting of zero-voltage-crossing gate feed of semiconductor power thyristors

Info

Publication number
HK61988A
HK61988A HK61988A HK61988A HK61988A HK 61988 A HK61988 A HK 61988A HK 61988 A HK61988 A HK 61988A HK 61988 A HK61988 A HK 61988A HK 61988 A HK61988 A HK 61988A
Authority
HK
Hong Kong
Prior art keywords
shunting
zero
voltage
semiconductor power
crossing gate
Prior art date
Application number
HK61988A
Inventor
Shmuel Howard Michael
Original Assignee
Shmuel Howard Michael
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shmuel Howard Michael filed Critical Shmuel Howard Michael
Publication of HK61988A publication Critical patent/HK61988A/en

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC
    • H02M5/04Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Temperature (AREA)
HK61988A 1981-05-15 1988-08-11 Shunting of zero-voltage-crossing gate feed of semiconductor power thyristors HK61988A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08114861A GB2113025B (en) 1981-05-15 1981-05-15 Thyristor switching circuits

Publications (1)

Publication Number Publication Date
HK61988A true HK61988A (en) 1988-08-19

Family

ID=10521815

Family Applications (1)

Application Number Title Priority Date Filing Date
HK61988A HK61988A (en) 1981-05-15 1988-08-11 Shunting of zero-voltage-crossing gate feed of semiconductor power thyristors

Country Status (2)

Country Link
GB (1) GB2113025B (en)
HK (1) HK61988A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES520069A0 (en) * 1983-02-24 1984-03-16 Bonilla Rubio Felipe STATIC SWITCH WITH ADJUSTABLE TIMING AND RESTRICTED USE FOR LIGHTING OF PORTALS AND STAIRS.
GB8423574D0 (en) * 1984-09-18 1984-10-24 Smiths Ind Plc Ac Switch
JPS622717A (en) * 1985-06-28 1987-01-08 Hayashibara Takeshi Rush current limiting circuit
GB2190254A (en) * 1986-05-07 1987-11-11 Duracell Int Condition responsive switching circuit
US4798935A (en) * 1987-07-08 1989-01-17 Environmental Fragrance Technologies, Ltd. Driver circuit
ITNA20100024A1 (en) * 2010-05-11 2011-11-12 Red Electronics S N C Di Mares Ca Aniello & C ELECTRONIC DEVICE FOR PHASE PARTIALIZATION CONTROL FOR OHMICO-INDUCTIVE LOADS WITH NETWORK SWITCHING SYSTEM - INTEGRATED LOAD.
EP2512005B1 (en) 2011-04-15 2017-02-15 Raychem International Remote control and operation of LV distribution networks
US10424952B2 (en) 2018-01-18 2019-09-24 Littelfuse, Inc. Bistage temperature device using positive temperature coefficient material
CN115314036B (en) * 2022-10-12 2023-01-06 合肥悦芯半导体科技有限公司 Switching circuit and electronic device

Also Published As

Publication number Publication date
GB2113025A (en) 1983-07-27
GB2113025B (en) 1986-01-15

Similar Documents

Publication Publication Date Title
GB2103877B (en) Gate protection for insulated gate semiconductor devices
GB2088631B (en) Field effect controlled semiconductor rectifier
DE3267574D1 (en) Gate turn-off thyristor stack
JPS57211773A (en) Semiconductor structure
EP0178387A3 (en) Gate turn-off power semiconductor device gate turn-off power semiconductor device
DE3471831D1 (en) Gate turn-off thyristor
GB2072963B (en) Gate circuit of gate turn-off thyristor
DE3370899D1 (en) Gate turn-off thyristor
DE3275335D1 (en) Thyristor
HK61988A (en) Shunting of zero-voltage-crossing gate feed of semiconductor power thyristors
DE3278058D1 (en) Power semiconductor device
GB2125619B (en) Gate turn-off thyristor
DE3173128D1 (en) Power thyristor
DE3275965D1 (en) Gate turn-off thyristor
DE3374740D1 (en) Radiation-controllable thyristor
GB2133619B (en) Semiconductor power device
DE3276286D1 (en) Gate turn-off thyristor
JPS57194579A (en) Thyristor
JPS57193059A (en) Thyristor
IL59961A (en) Shunting of zero-voltage-crossing gate feed of semiconductor power thyristors
GB2124427B (en) Insulated gate semiconductor devices
JPS57194574A (en) Thyristor
GB2153586B (en) Gate turn-off thyristor
DE3268107D1 (en) Thyristor
JPS57196550A (en) Sealing case for power semiconductor