JPS5347278A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5347278A
JPS5347278A JP12133376A JP12133376A JPS5347278A JP S5347278 A JPS5347278 A JP S5347278A JP 12133376 A JP12133376 A JP 12133376A JP 12133376 A JP12133376 A JP 12133376A JP S5347278 A JPS5347278 A JP S5347278A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
insulated gate
type field
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12133376A
Other languages
Japanese (ja)
Inventor
Takahide Kawano
Susumu Sakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12133376A priority Critical patent/JPS5347278A/en
Publication of JPS5347278A publication Critical patent/JPS5347278A/en
Pending legal-status Critical Current

Links

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: An insulated gate type field effect transistor is made suitable for a load for an integrated circuit by forming a region of the same conductivity type as that of a source region in continuation to the source region in the region, near the source region, having bbeen formed in an offset way, through ion implantation.
COPYRIGHT: (C)1978,JPO&Japio
JP12133376A 1976-10-12 1976-10-12 Insulated gate type field effect transistor Pending JPS5347278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12133376A JPS5347278A (en) 1976-10-12 1976-10-12 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12133376A JPS5347278A (en) 1976-10-12 1976-10-12 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5347278A true JPS5347278A (en) 1978-04-27

Family

ID=14808657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12133376A Pending JPS5347278A (en) 1976-10-12 1976-10-12 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5347278A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660064A (en) * 1979-10-23 1981-05-23 Fujitsu Ltd Manufacture of semiconductor device
JPS5681975A (en) * 1979-12-08 1981-07-04 Toshiba Corp Insulated gate type field effect transistor
JPS5732665A (en) * 1980-08-06 1982-02-22 Seiko Epson Corp Complementary type integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660064A (en) * 1979-10-23 1981-05-23 Fujitsu Ltd Manufacture of semiconductor device
JPS5681975A (en) * 1979-12-08 1981-07-04 Toshiba Corp Insulated gate type field effect transistor
JPH0335836B2 (en) * 1979-12-08 1991-05-29 Tokyo Shibaura Electric Co
JPS5732665A (en) * 1980-08-06 1982-02-22 Seiko Epson Corp Complementary type integrated circuit

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