JPS5623746A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623746A
JPS5623746A JP9894779A JP9894779A JPS5623746A JP S5623746 A JPS5623746 A JP S5623746A JP 9894779 A JP9894779 A JP 9894779A JP 9894779 A JP9894779 A JP 9894779A JP S5623746 A JPS5623746 A JP S5623746A
Authority
JP
Japan
Prior art keywords
resist
semiconductor device
highly accurate
metallic film
exposure portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9894779A
Other languages
Japanese (ja)
Inventor
Yoshihiro Todokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP9894779A priority Critical patent/JPS5623746A/en
Publication of JPS5623746A publication Critical patent/JPS5623746A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain the highly accurate electrode wiring in the semiconductor device by superimposing a resist mask of small pore on a resist mask of large pore, evaporating metallic film thereon, and then removing the masks therefrom. CONSTITUTION:The first positive resist 2 is formed on a semiconductor substrate 1 to form an exposure portion 5. A positive resist 2' is further superimposed to form a smaller exposure portion 5'. When it is developed, an electrode opening 3 having an overhang is formed. When a metallic film 4 is formed and the resist is removed, a miniature electrode pattern 6 is obtained thereon. This configuration can easily form an overhanglike resist pattern and can easily lift off it. Accordingly, it can obtain highly accurate electrode pattern in one development with preferable reproducibility.
JP9894779A 1979-08-01 1979-08-01 Manufacture of semiconductor device Pending JPS5623746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9894779A JPS5623746A (en) 1979-08-01 1979-08-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9894779A JPS5623746A (en) 1979-08-01 1979-08-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5623746A true JPS5623746A (en) 1981-03-06

Family

ID=14233287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9894779A Pending JPS5623746A (en) 1979-08-01 1979-08-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623746A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118117A (en) * 1982-01-06 1983-07-14 Nippon Telegr & Teleph Corp <Ntt> Formation of thick film pattern
US4578343A (en) * 1982-09-21 1986-03-25 Fujitsu Limited Method for producing field effect type semiconductor device
US4582778A (en) * 1983-10-25 1986-04-15 Sullivan Donald F Multi-function photopolymer for efficiently producing high resolution images on printed wiring boards, and the like
JPS6464766A (en) * 1987-09-01 1989-03-10 Tadatomo Suga Machining method for specular surface of hard and brittle material and grinding wheel member used therefor
US6835120B1 (en) 1999-11-16 2004-12-28 Denso Corporation Method and apparatus for mechanochemical polishing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129190A (en) * 1975-05-02 1976-11-10 Fujitsu Ltd Manufacturing method of semiconductor
JPS5227286A (en) * 1975-08-26 1977-03-01 Nec Corp Semiconductor manufacturing process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129190A (en) * 1975-05-02 1976-11-10 Fujitsu Ltd Manufacturing method of semiconductor
JPS5227286A (en) * 1975-08-26 1977-03-01 Nec Corp Semiconductor manufacturing process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118117A (en) * 1982-01-06 1983-07-14 Nippon Telegr & Teleph Corp <Ntt> Formation of thick film pattern
JPH0419704B2 (en) * 1982-01-06 1992-03-31 Nippon Telegraph & Telephone
US4578343A (en) * 1982-09-21 1986-03-25 Fujitsu Limited Method for producing field effect type semiconductor device
US4582778A (en) * 1983-10-25 1986-04-15 Sullivan Donald F Multi-function photopolymer for efficiently producing high resolution images on printed wiring boards, and the like
JPS6464766A (en) * 1987-09-01 1989-03-10 Tadatomo Suga Machining method for specular surface of hard and brittle material and grinding wheel member used therefor
JPH05170B2 (en) * 1987-09-01 1993-01-05 Tadatomo Suga
US6835120B1 (en) 1999-11-16 2004-12-28 Denso Corporation Method and apparatus for mechanochemical polishing

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