NL105256C - - Google Patents

Info

Publication number
NL105256C
NL105256C NL105256DA NL105256C NL 105256 C NL105256 C NL 105256C NL 105256D A NL105256D A NL 105256DA NL 105256 C NL105256 C NL 105256C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL105256C publication Critical patent/NL105256C/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL105256D 1956-03-05 NL105256C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US853979XA 1956-03-05 1956-03-05

Publications (1)

Publication Number Publication Date
NL105256C true NL105256C (en)

Family

ID=22191347

Family Applications (2)

Application Number Title Priority Date Filing Date
NL105256D NL105256C (en) 1956-03-05
NL215006D NL215006A (en) 1956-03-05

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL215006D NL215006A (en) 1956-03-05

Country Status (5)

Country Link
BE (1) BE555438A (en)
DE (1) DE1087425B (en)
FR (1) FR1172760A (en)
GB (1) GB853979A (en)
NL (2) NL215006A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3134694A (en) * 1960-08-25 1964-05-26 Siemens Ag Apparatus for accurately controlling the production of semiconductor rods
NL275889A (en) * 1961-03-14
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
DE1241811B (en) * 1962-01-12 1967-06-08 Itt Ind Ges Mit Beschraenkter Process for the production of diffused zones of impurities in a semiconductor body
DE1202616B (en) * 1962-02-23 1965-10-07 Siemens Ag Process for removing the semiconductor layer deposited on the heater during epitaxy
DE1521400B1 (en) * 1962-06-04 1970-07-16 Philips Nv Method for manufacturing a semiconductor component
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
FR1461335A (en) * 1963-01-14 1966-02-25 Loire Atel Forges Process for the treatment of surfaces of metal parts allowing operations without lubrication
DE3931587A1 (en) * 1989-09-22 1991-04-04 Standard Elektrik Lorenz Ag Producing semiconductor layer on wafer - by doping in reaction chamber of epitaxy reactor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices

Also Published As

Publication number Publication date
FR1172760A (en) 1959-02-16
GB853979A (en) 1960-11-16
BE555438A (en)
NL215006A (en)
DE1087425B (en) 1960-08-18

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