NL134888C - - Google Patents
Info
- Publication number
- NL134888C NL134888C NL134888DA NL134888C NL 134888 C NL134888 C NL 134888C NL 134888D A NL134888D A NL 134888DA NL 134888 C NL134888 C NL 134888C
- Authority
- NL
- Netherlands
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0641—Preparation by direct nitridation of elemental boron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
- C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/932—Boron nitride semiconductor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Catalysts (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US111279A US3141802A (en) | 1961-05-19 | 1961-05-19 | Semiconducting cubic boron nitride and methods for preparing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
NL134888C true NL134888C (xx) |
Family
ID=22337574
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL134888D NL134888C (xx) | 1961-05-19 | ||
NL278494D NL278494A (xx) | 1961-05-19 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL278494D NL278494A (xx) | 1961-05-19 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3141802A (xx) |
BE (1) | BE617778A (xx) |
DE (1) | DE1169902B (xx) |
GB (1) | GB1002084A (xx) |
NL (2) | NL278494A (xx) |
SE (1) | SE316457B (xx) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3188537A (en) * | 1961-08-31 | 1965-06-08 | Gen Electric | Device for asymmetric conduct of current |
US3768972A (en) * | 1971-05-10 | 1973-10-30 | Westinghouse Electric Corp | Method of producing cubic boron nitride with aluminum containing catalyst |
CH562756A5 (xx) * | 1972-05-31 | 1975-06-13 | Vnii Abrazivov I Shlifovania V | |
JPS5239400B2 (xx) * | 1973-03-26 | 1977-10-05 | ||
US4980730A (en) * | 1987-05-01 | 1990-12-25 | National Institute For Research In Organic Materials | Light emitting element of cubic boron nitride |
JPH01224039A (ja) * | 1988-03-03 | 1989-09-07 | Sumitomo Electric Ind Ltd | 立方晶窒化硼素p−n接合体の作製方法 |
EP1686202B1 (en) * | 2003-11-18 | 2011-03-23 | National Institute for Materials Science | Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit |
WO2006087982A1 (ja) * | 2005-02-16 | 2006-08-24 | Ngk Insulators, Ltd. | 六方晶窒化ホウ素単結晶の製造方法および六方晶窒化ホウ素単結晶 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL178978B (nl) * | 1952-06-19 | Texaco Ag | Werkwijze voor het bereiden van een smeervet op basis van lithiumzeep. | |
US2858275A (en) * | 1954-12-23 | 1958-10-28 | Siemens Ag | Mixed-crystal semiconductor devices |
US2947617A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Abrasive material and preparation thereof |
GB860499A (en) * | 1958-01-27 | 1961-02-08 | Gen Electric | Methods of making cubic boron nitride |
-
0
- NL NL134888D patent/NL134888C/xx active
- NL NL278494D patent/NL278494A/xx unknown
-
1961
- 1961-05-19 US US111279A patent/US3141802A/en not_active Expired - Lifetime
-
1962
- 1962-04-24 GB GB15570/62A patent/GB1002084A/en not_active Expired
- 1962-05-16 DE DEG34992A patent/DE1169902B/de active Pending
- 1962-05-17 BE BE617778A patent/BE617778A/fr unknown
- 1962-05-18 SE SE5602/62A patent/SE316457B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1169902B (de) | 1964-05-14 |
NL278494A (xx) | |
US3141802A (en) | 1964-07-21 |
SE316457B (xx) | 1969-10-27 |
GB1002084A (en) | 1965-08-25 |
BE617778A (fr) | 1962-09-17 |