TWI750054B - 晶片封裝方法以及晶片封裝單元 - Google Patents

晶片封裝方法以及晶片封裝單元 Download PDF

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TWI750054B
TWI750054B TW110108482A TW110108482A TWI750054B TW I750054 B TWI750054 B TW I750054B TW 110108482 A TW110108482 A TW 110108482A TW 110108482 A TW110108482 A TW 110108482A TW I750054 B TWI750054 B TW I750054B
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chip
substrate
unit
metal film
adhesive layer
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TW202220138A (zh
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黃恒賫
永中 胡
顏豪疄
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立錡科技股份有限公司
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Abstract

一種晶片封裝方法，包含：提供複數個晶片單元；提供一底材，放置晶片單元於底材上；提供一黏著層與一金屬薄膜，藉由黏著層以黏著金屬薄膜於晶片單元上；以及切割底材上晶片單元，以形成複數個分離的晶片封裝單元，其中各晶片封裝單元中分別包含切割後金屬薄膜。

Description

晶片封裝方法以及晶片封裝單元
本發明係有關一種晶片封裝方法，特別是指一種封裝過程中，切割晶片單元時同步切割黏著於晶片單元的金屬薄膜的晶片封裝方法。
先前技術中，參照圖1，其顯示美國專利案US 6023096的晶片封裝單元，其中位於晶片CH下方的底材110上具有一開孔，開孔下方設有一金屬薄膜120，封裝材料100充填於晶片CH下方、底材110的開孔、以及金屬薄膜120之間。此金屬薄膜120具有加強晶片CH散熱的功能，但此製程十分複雜。首先，底材110上需有開孔，金屬薄膜120設置於未完全硬化的封裝材料100上，其金屬薄膜120設置過程中包含腐蝕、定位、加熱、以及加壓等，十分複雜。
參照圖2，其顯示美國專利案US 6411507的晶片封裝單元，其中藉由依形狀複雜的金屬蓋130，其中金屬蓋130設計為與晶片CH熱接觸。其中金屬蓋130的形狀複雜，其加工有一定難度，金屬蓋130定位步驟中如何能正確放到位置，以達到與晶片CH間具有最佳熱接觸，也是另一技術困擾。此外，因製作技術限制，金屬蓋130有尺寸的下限，無法用於小尺寸的晶片封裝單元。
又參照圖3，其中顯示美國專利案US 8794889的晶片封裝單元，其中為加強晶片CH的熱傳導，在晶片CH上壓置一散熱鰭片140。設置 散熱鰭片140時，常需在晶片CH上塗抹散熱膏，以避免晶片CH與散熱鰭片間140的空隙造成散熱不良。此外，散熱鰭片140是藉由螺絲SC鎖固在晶片CH上，一般消費者購買後，部分消費者不知如何處理或沒注意此要求而略過、或忘記塗抹散熱膏，造成晶片CH運作時效能下降，使用上很不便。此外，類似地，散熱鰭片140也有尺寸的下限，無法用於小尺寸的晶片封裝單元。
針對先前技術之缺點，本發明提供一晶片封裝單元，此設計具有過程簡單、製造容易、成本低、不受尺寸限制的優點。
就其中一個觀點言，本發明提供了一種晶片封裝方法，以解決前述之困擾。此晶片封裝方法包含：提供複數個晶片單元、或包含複數個晶片單元的一晶圓；提供一底材，放置晶片單元或晶圓於底材上；提供一黏著層以黏著一金屬薄膜於晶片單元上，或者底材上一金屬薄膜藉由一黏著層黏著於晶圓；以及切割底材上晶片單元、或切割晶圓上晶片單元，以形成複數個分離的晶片封裝單元，其中各晶片封裝單元中分別包含切割後金屬薄膜。
前述的黏著層，可包含具高熱傳性能的黏著材料。切割後金屬薄膜藉由黏著層黏著於晶片單元，晶片單元操作過程所產生的熱，可藉由黏著層傳遞至切割後金屬薄膜，然後傳遞至晶片封裝單元外。
一實施例中，複數個晶片單元黏著於黏著層，並提供一封裝材料，以封裝複數個晶片單元。
切割後金屬薄膜的表面積，基本上等同於晶片封裝單元的頂面積。操作晶片單元時，切割後金屬薄膜具有提升其中晶片單元的散熱效率以及增加晶片單元的散熱面積，大幅降低熱集中，達到熱分散以及快速 傳熱的效果。因此，切割後金屬薄膜與黏著層形成晶片封裝單元的一高效率熱傳側。
一實施例中，底材包含晶圓切割膠帶，切割晶圓切割膠帶上的晶圓為複數個晶片封裝單元後，從晶圓切割膠帶上剝離各晶片封裝單元。其中，各晶片封裝單元中黏著層，黏著切割後金屬薄膜於各晶片單元上。
一實施例中，金屬薄膜的材料包含銅、鋁、銀、鎳、或複合金屬材料，其熱傳係數高於封裝材料。一實施例中，金屬薄膜的表面塗佈一石墨烯塗層，可提高金屬薄膜的熱傳效率。
另一觀點中，本發明提供一種晶片封裝單元，其包含：一晶片單元；以及一黏著層與一金屬薄膜，金屬薄膜藉由黏著層以黏著於晶片單元上，金屬薄膜與黏著層形成晶片封裝單元的一高效率熱傳側。其中，晶片封裝單元又選擇性包含一底材(基板或引線框)以及一封裝材料，晶片單元可設置於底材上，封裝材料封裝各晶片單元的側邊，以及選擇性封裝各晶片單元中面對底材的底面以及與位於底面相對側的頂面。
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
100:封裝材料
110,230:底材
120,220:金屬薄膜
130:金屬蓋
140:散熱鰭片
210:黏著層
250:晶片封裝單元
220A:切割後金屬薄膜
CHU:晶片單元
WF:晶圓
圖1、2、3顯示先前技術中晶片封裝單元的示意圖。
圖4A至4F、5A至5E顯示根據本發明兩實施例的晶片封裝方法示意圖。
圖6至12顯示根據本發明多個實施例的晶片封裝單元的示意圖。
本發明中的圖式均屬示意，主要意在表示各電路組成部分間之相互關係，至於形狀與尺寸則並未依照比例繪製。
圖4A至4F顯示本發明中一種實施例的晶片封裝方法。其中，本發明之晶片封裝方法主要包括：提供複數個晶片單元CHU(圖4A)；提供一底材110，放置晶片單元CHU於底材110上(圖4A)；提供一黏著層210與一金屬薄膜220(圖4C，其中金屬薄膜220在上，黏著層210在下)，黏著層210用以黏著金屬薄膜220於晶片單元CHU上(圖4B與4C中晶片單元CHU上又包含一封裝材料100，此實施內容詳見後續其他實施例說明)；以及切割底材上晶片單元(圖4E、4F)，以形成複數個分離的晶片封裝單元250(圖4F)，其中各晶片封裝單元250中分別包含切割後金屬薄膜220A。
圖4D、4E分別顯示晶片封裝單元250切割前的雷射標印(Laser marking)與切割後的晶片封裝單元250，此為晶片封裝單元250的已知技術、故不詳述內容。
前述的放置晶片單元CHU於底材110上步驟中，複數個晶片單元CHU可分散地設置在底材110上(圖4A)。
前述的黏著層210，可包含具高熱傳性能的黏著材料、以及金屬薄膜220與晶片單元CHU(或晶圓WF)間的良好熱接觸特性。切割後金屬薄膜220A藉由黏著層210黏著於晶片單元CHU，晶片單元CHU操作過程所產生的熱，可藉由黏著層210傳遞至切割後金屬薄膜220A，然後熱傳至晶片封裝單元250外。
一實施例中，放置複數個晶片單元CHU的底材(例如基板條(Substrate stripe)、或引線框架條(Lead frame stripe))可不具有黏著層210與金屬薄膜220。複數個晶片單元CHU可放置於底材110上，而黏著層210與金屬 薄膜220可放置於複數個晶片單元CHU的另一側。其所製作的晶片封裝單元250例如所示如圖6、7、8、9、10、11。
一實施例中，複數個晶片單元CHU黏著於黏著層210(圖4A)，並提供封裝材料100，以封裝複數個晶片單元CHU(圖4B)。
圖5A至5E顯示本發明中另一種實施例的晶片封裝方法。其中，本發明之晶片封裝方法主要包括：提供包含複數個晶片單元的一晶圓WF(圖5A)；提供一底材230(圖5C)，放置晶圓WF於底材230上；於底材230上一金屬薄膜220藉由一黏著層210黏著於晶圓WF(圖5C)；以及切割晶圓WF上晶片單元(圖5D)，以形成複數個分離的晶片封裝單元250(圖5E)，其中各晶片封裝單元250中分別包含切割後金屬薄膜220A。
前述的提供複數個晶片單元的晶圓WF(圖5A、5B)步驟中，晶圓WF可包含複數個未切割晶片單元，當進行切割晶圓WF上晶片單元CHU的步驟，也同時形成複數個分散的晶片封裝單元250。
前述的黏著層210，可包含具高熱傳性能的黏著材料、以及金屬薄膜220與晶片單元CHU(或晶圓WF)間的良好熱接觸特性。切割後金屬薄膜220A藉由黏著層210黏著於晶片單元CHU，晶片單元CHU操作過程所產生的熱，可藉由黏著層210傳遞至切割後金屬薄膜220A，然後熱傳至晶片封裝單元250外。
一實施例中，放置晶圓WF的底材230(例如晶圓切割膠帶(Dicing tape)，圖5C)，可包含一金屬薄膜220藉由一黏著層210黏著於晶圓WF，所製作的晶片封裝單元250，需從晶圓切割膠帶剝離，其晶片封裝單元250例如所示如圖12，各晶片封裝單元250中黏著層210，黏著切割後金屬薄膜220A於各晶片單元CHU上。另一實施例中，放置複數個晶片單元CHU的底材(例如基板條(Substrate stripe)、或引線框架條(Lead frame stripe))可不具有黏著層210與金屬薄膜220。複數個晶片單元CHU可放置於底材110上， 而黏著層210與金屬薄膜220可放置於複數個晶片單元CHU的另一側。其所製作的晶片封裝單元250例如所示如圖6、7、8、9、10、11。
參照圖6、7、8、9、10、11的晶片封裝單元250，封裝材料100可封裝各晶片單元CHU的側邊，以及選擇性封裝各晶片單元CHU中面對底材110的底面(圖6、7、8、9、10、11)、或與底面相對側的頂面(圖6、8、10、11)。一實施例中，封裝材料110封裝各晶片單元CHU的側邊(或側邊以及底面)，切割後金屬薄膜220A藉由黏著層210黏著於各晶片單元CHU的頂面上。一實施例中，封裝材料110封裝各晶片單元CHU的頂面以及側邊(或頂面、側邊以及底面)，切割後金屬薄膜220A藉由黏著層210黏著於各晶片單元CHU頂面的封裝材料110上。
相較於先前技術，本發明的封裝過程中，金屬薄膜220不設置於底材110面對晶片單元CHU的相反側。如此，切割晶片封裝單元250時，也同步切割金屬薄膜220，可避免底材110為金屬薄膜220開孔等許多複雜工序。如外，本發明的技術具有過程簡單、製造容易、與成本低的優點。
一實施例中，黏著層210與金屬薄膜220設置於複數個晶片單元CHU後，需有一烘烤過程，以固化黏著層210並加強金屬薄膜220與晶片單元CHU間的黏固狀態。
切割後金屬薄膜220A的表面積，基本上等同於晶片封裝單元250的頂面積。操作晶片單元CHU時，切割後金屬薄膜220A具有提升其中晶片單元CHU的散熱效率以及增加晶片單元CHU的散熱面積，大幅降低熱集中，達到熱分散的效果。因此，切割後金屬薄膜220A與黏著層210形成晶片封裝單元250的一高效率熱傳側。
一實施例中，底材包含基板條或引線框架條(例如圖6、7中底材110為基板條，圖9、10、11中底材110為引線框架條)，各晶片單元CHU與底材110間，具有覆晶式(Flip CHU，圖6、7、8、9)或打線式(Wire bond， 圖10、11)的導線連接方式，其端視晶片單元CHU放置於底材110的方式、或其他需要而定。
在晶圓WF放置於晶圓切割膠帶的實施例中，晶圓WF放置於晶圓切割膠帶前，可設置一導線重新分布層(Redistribution Layer)結構於晶圓WF上，其可根據需要而藉由金屬佈線製程和凸塊製程改變晶圓WF上原設計的線路接點位置，使線路能應用於不同的元件模組。
一實施例中，金屬薄膜220的材料包含銅、鋁、銀、鎳、或複合金屬材料，其熱傳係數高於封裝材料。因晶片單元的封裝特性，封裝材料需具有良好的封裝(Molding)或包覆成型(Overmolding)的材料特性，這類封裝材料的熱傳效能特性普通，當晶片散熱需求增加時，常因散熱不及而降低晶片操作效能，金屬薄膜220可大幅改善此缺點。一實施例中，金屬薄膜220的表面塗佈一石墨烯塗層，可提高晶片單元CHU經由金屬薄膜220的熱傳效率。
參照圖7至12，另一觀點中，本發明提供一種晶片封裝單元250，其包含：一晶片單元CHU；以及一黏著層210與一切割後金屬薄膜220A，切割後金屬薄膜220A藉由黏著層210以黏著於晶片單元CHU上，切割後金屬薄膜220A與黏著層210形成晶片封裝單元250的一高效率熱傳側。其中，晶片封裝單元又選擇性包含一底材110(基板或引線框)以及一封裝材料100，晶片單元CHU可設置於底材110上，封裝材料100封裝各晶片單元CHU的側邊，以及選擇性封裝各晶片單元CHU中面對底材110的底面以及與位於底面相對側的頂面。
關於晶片封裝單元中各部分的詳細內容，請參見前述晶片封裝方法中的解釋與說明，在此不贅述。
以上已針對實施例來說明本發明，唯以上所述者，僅係為使熟悉本技術者易於了解本發明的內容而已，並非用來限定本發明之權利範 圍。在本發明之相同精神下，熟悉本技術者可以思及各種等效變化。例如，本發明之用語「耦接」包括直接連接與間接連接。本發明的範圍應涵蓋上述及其他所有等效變化。
100:封裝材料
110:底材
250:晶片封裝單元
220A:切割後金屬薄膜
Chip:晶片

Claims (14)

  1. 一種晶片封裝方法，包含：提供複數個晶片單元、或包含複數個晶片單元的一晶圓；提供一底材，放置該些晶片單元或該晶圓於該底材上；提供一黏著層以黏著一金屬薄膜於該些晶片單元上，或者該底材上一金屬薄膜藉由一黏著層以黏著於該晶圓；以及切割該底材上該些晶片單元或該晶圓上該些晶片單元，以形成複數個分離的晶片封裝單元，其中各該晶片封裝單元中分別包含切割後該金屬薄膜。
  2. 如請求項1所述之晶片封裝方法，其中該些晶片單元黏著於該黏著層，並提供一封裝材料，以封裝該些晶片單元，其中該封裝材料，封裝各該晶片單元的側邊，以及選擇性封裝各該晶片單元中面對該底材的底面或與位於該底面相對側的頂面。
  3. 如請求項2所述之晶片封裝方法，各該晶片封裝單元中，切割後該金屬薄膜藉由該黏著層黏著於各該晶片單元的該頂面上、或藉由該黏著層黏著於該頂面的封裝材料上。
  4. 如請求項3所述之晶片封裝方法，其中該金屬薄膜不設置於該底材面對各該晶片單元的相反側。
  5. 如請求項1所述之晶片封裝方法，其中切割後該金屬薄膜的表面積基本上等同於該晶片封裝單元的頂面積，切割後該金屬薄膜與該黏著層形成該晶片封裝單元的一高效率熱傳側。
  6. 如請求項1所述之晶片封裝方法，其中該底材包含：基板條(Substrate stripe)、引線框架條(Lead frame stripe)、或晶圓切割膠帶(Dicing tape)。
  7. 如請求項6所述之晶片封裝方法，其中該底材包含該基板條或該引線框架條時，各該晶片單元與該底材間，具有覆晶式(Flip CHU)或打線式(Wire bond)的導線連接方式。
  8. 如請求項6所述之晶片封裝方法，其中當該底材為該晶圓切割膠帶，切割該晶圓切割膠帶上的該晶圓後，從該晶圓切割膠帶上剝離各該晶片封裝單元，各該晶片封裝單元中切割後該金屬薄膜藉由該黏著層黏著於各該晶片單元上。
  9. 如請求項6所述之晶片封裝方法，其中該晶圓放置於該晶圓切割膠帶前，可設置一導線重新分布層(Redistribution Layer)結構於該晶圓上。
  10. 如請求項1所述之晶片封裝方法，其中該金屬薄膜的材料包含銅、鋁、銀、鎳、或複合金屬材料。
  11. 如請求項1所述之晶片封裝方法，其中該金屬薄膜的表面塗佈一石墨烯塗層。
  12. 一種晶片封裝單元，包含：一底材部分，其中一晶片單元放置於該底材部分上；以及一黏著層部分與一金屬薄膜部分，該金屬薄膜部分藉由該黏著層部分以黏著於該晶片單元上；其中，該晶片封裝單元係由將複數個該晶片單元切割分離而得，該複數個晶片單元共同放置於一底材上，並共同藉由一黏著層而黏著於一金屬薄膜，於切割後，各晶片封裝單元分別包含對應的該底材部分、該黏著層部分與該金屬薄膜部分。
  13. 一種晶片封裝單元，包含：一底材部分，其中一晶片單元放置於該底材部分上；以及 一黏著層部分與一金屬薄膜部分，該金屬薄膜部分藉由該黏著層部分以黏著於該晶片單元上；其中，該晶片封裝單元係由將複數個該晶片單元切割分離而得，其中，一晶圓包括該複數個晶片單元，並放置該晶圓於一底材上，且於該底材上，一金屬薄膜藉由一黏著層而黏著於於該晶圓，於切割該晶圓上之複數個該晶片單元後，各晶片封裝單元分別包含對應的該底材部分、該黏著層部分與該金屬薄膜部分。
  14. 如請求項12與13其中任一項所述之晶片封裝單元，其中該金屬薄膜部分的表面積基本上等同於該晶片封裝單元的頂面積。
TW110108482A 2020-11-13 2021-03-10 晶片封裝方法以及晶片封裝單元 TWI750054B (zh)

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TW201644328A (zh) * 2015-06-15 2016-12-16 南茂科技股份有限公司 晶片封裝結構
US20180342437A1 (en) * 2015-12-02 2018-11-29 Novatek Microelectronics Corp. Chip on film package and heat-dissipation structure for a chip package
TWM602725U (zh) * 2020-07-31 2020-10-11 大陸商河南烯力新材料科技有限公司 薄膜覆晶封裝結構與顯示裝置

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US20120018873A1 (en) * 2009-08-13 2012-01-26 International Business Machines Corporation Method and package for circuit chip packaging
TW201644328A (zh) * 2015-06-15 2016-12-16 南茂科技股份有限公司 晶片封裝結構
US20180342437A1 (en) * 2015-12-02 2018-11-29 Novatek Microelectronics Corp. Chip on film package and heat-dissipation structure for a chip package
TWM602725U (zh) * 2020-07-31 2020-10-11 大陸商河南烯力新材料科技有限公司 薄膜覆晶封裝結構與顯示裝置

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